• 한국전기전자재료학회논문지
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• 제17권2호
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• pp.121-126
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• 2004

In this paper, the effects of the ozone oxidation of the landing polycrystalline silicon on the cell contact resistance of the DRAM device were studied. For this study, the ozone oxidation of the landing polycrystalline silicon layer was performed under various conditions, which was followed by the normal DRAM processes. Then, the cell contact resistance and $t_{WR}$ (write recovery time) of the devices were measured and analyzed. The experimental results showed that the cell contact resistance was more significantly increased for higher temperature of oxidation, longer time of oxidation, and higher concentration of ozone in the oxidation furnace. In addition, the TEM cross-sectional micrographs clearly showed that the oxide layer at the interface between the landing polycrystalline silicon layer and the plug polycrystalline silicon layer was increased by the ozone oxidation. Furthermore, the rate of the device failure due to too large write recovery time was also found to be well correlated with the increase of the cell contact resistance.

• 한국전기전자재료학회논문지
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• 제16권5호
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• pp.390-396
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• 2003

As the design rule of device continued to shrink, the contact resistance in small contact size became important. Although the conventional TiN/Ti structure as a ohmic layer has been widely used, we propose a new TiN/Co film structure. We characterized a contact resistance by using a chain pattern and a KELVIN pattern, and a leakage current determined by current-voltage measurements. Moreover, the microstructure of TiN/ Ti/ silicide/n$\^$+/ contact was investigated by a cross-sectional transmission electron microscope (TEM). The contact resistance by the Co ohmic layer showed the decrease of 26 % compared to that of a Ti ohmic layer in the chain resistance, and 50 ％ in KELYIN resistance, respectively. A Co ohmic layer shows enough ohmic behaviors comparable to the Ti ohmic layer, while higher leakage currents in wide area pattern than Ti ohmic layer. We confirmed that an uniform silicide thickness and a good interface roughness were able to be achieved in a CoSi$_2$ Process formed on a n$\^$+/ silicon junction from TEM images.

• 한국윤활학회:학술대회논문집
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• 한국윤활학회 2000년도 제31회 춘계학술대회
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• pp.76-83
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• 2000

Boundary lubrication condition arises in most lubricated systems, especially during motion reversals and start up phase of operation. In this work electric contact resistance variations with respect to sliding conditions under lubrication is investigated The motivation was to improve the understanding of the contact condition in the boundary lubrication regime. It is shown that electrical contact resistance is sensitive to sliding speed and surface condition of the specimens. Also, phenomena such as run-in during the initial phase of sliding and lubricant pile up near the sliding pin could be observed. The results of this work will aid in better understanding of the metal to metal contact condition in lubricated systems.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 1995년도 추계학술대회 논문집
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• pp.63-66
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• 1995

The ohmic characterization of Au/Te/Au/n-GaAs structure is investigated by the application of x-ray diffraction, scanning electron microscopy, Auger electron spectroscopy, the specific contact resistance and I-V measurement. Increasing the annealing temperature, the results of XRD measurement show the sharpening of the Au-Ga peak and the increasing of the intensity of Au peak due to the crystallization. At 400$^{\circ}C$, which is the ohmic onset point, Ga$_2$Te$_3$peak gets evident and GaAs regrowth peak appears for the samples annealed at 500$^{\circ}C$. The variation of shottky contact to ohmic contact is confirmed by the I-V curve transition. The specific contact resistance of 3.8x10$\^$-5/$\Omega$-$\textrm{cm}^2$ is obtained for the sample annealed at 500$^{\circ}C$ and above 600$^{\circ}C$ the specific contact resistance increased due to the decomposition of GaAs substrate.

• Tribology and Lubricants
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• 제16권5호
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• pp.381-388
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• 2000

Boundary lubrication condition arises in most lubricated systems, especially during motion reversals and start up phase of operation. In this work electric contact resistance variations with respect to sliding conditions under lubrication is investigated. The motivation was to improve the understanding of the contact condition in the boundary lubrication regime. It is shown that electrical contact resistance is sensitive to sliding speed and surface condition of the specimens. Also, phenomena such as run-in during the initial phase of sliding and lubricant pile up near the sliding pin could be observed. The results of this work will aid in better understanding of the metal to metal contact condition in lubricated systems.

• Applied Science and Convergence Technology
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• 제26권4호
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• pp.55-61
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• 2017

Graphene, with a carrier mobility achieving up to $140,000cm^2/Vs$ at room temperature, makes it an ideal material for application in semiconductor devices. However, when the metal comes in contact with the graphene sheet, an energy barrier forms at the metal-graphene interface, resulting in a drastic reduction of the carrier mobility of graphene. In this review, the various methods of forming metal-graphene covalent contacts to lower the contact resistance are discussed. Furthermore, the graphene sheet in the area of metal contact can be cut in certain patterns, also discussed in this review, which provides a more efficient approach to forming covalent contacts, ultimately reducing the contact resistance for the realization of high-performance graphene devices.

• 한국기계가공학회지
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• 제20권11호
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• pp.121-126
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• 2021

In this study, the effect of thermal contact resistance between pin-channel tubes on the heat transfer characteristics was analytically examined around the channel tubes with the pins attached to two consecutive arranged channel pipes. The numerical results showed that the heat transfer coefficient decreased geometrically as the thermal contact resistance increased, and the corresponding temperature change on the contact surface increased as the thermal contact resistance increased. The thinner the pin, the more pronounced the geometric drop in the heat transfer coefficient. It was confirmed that the higher the height of the pin, the higher was the heat transfer coefficient, however, the greater the size of the thermal contact resistance, the smaller was the heat transfer coefficient. It was found that the temperature change in the inner wall of the channel tube did not significantly affect the heat transfer characteristics owing to the thermal contact resistance. Furthermore, the velocity of air at the entrance of the channel tube was proportional to the heat transfer coefficient due to a decrease in the convective heat resistance corresponding to an increase in the flow rate.

• 한국전산유체공학회:학술대회논문집
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• 한국전산유체공학회 2009년 추계학술대회논문집
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• pp.135-144
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• 2009

In this study, the heat transfer and fluid flow characteristics of a condenser for a refrigerator are analyzed with the numerical method. The main objective of the study is to obtain basic data in order to develop a new type of condenser focused on an influence of thermal resistance of air side and thermal contact resistance on the heat transfer performance. The CFD technique was used for whole study, and experiments were performed in order to verify the reliability of the numerical analysis and predict the thermal contact resistance. In this study, a heat exchanger sample was made of a part of condenser to make the experimental and numerical analysis simple and efficient. Water was used for the inner working fluid of the heat exchanger, and an experimental apparatus was composed concisely. A heat exchanger sample of tube type was used to verify the reliability of numerical analysis, and a heat exchanger of fin and tube type was used to predict the ratio of thermal contact resistance to the overall thermal resistance.

• 한국전산유체공학회지
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• 제15권1호
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• pp.46-55
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• 2010

In this study, the heat transfer and fluid flow characteristics of a condenser for a refrigerator are analyzed with the numerical method. The main objective of the study is to obtain basic data in order to develop a new type of condenser focused on an influence of thermal resistance of air side and thermal contact resistance on the heat transfer performance. The CFD technique was used for whole study, and experiments were performed in order to verify the reliability of the numerical analysis and predict the thermal contact resistance. In this study, a heat exchanger sample was made of a part of condenser to make the experimental and numerical analysis simple and efficient. Water was used for the inner working fluid of the heat exchanger, and an experimental apparatus was composed concisely. A heat exchanger sample of tube type was used to verify the reliability of numerical analysis, and a heat exchanger of fin and tube type was used to predict the ratio of thermal contact resistance to the overall thermal resistance.

• 한국초전도ㆍ저온공학회논문지
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• 제6권4호
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• pp.17-21
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• 2004

The butt joint was verified to satisfy the thermal stability of the ITER magnet system through the ITER CS model coil test. Since the contact area in the butt joint is limited to the cross section of the cable, it is necessary to analyze and control the joining parameters precisely for improving the DC resistance. It is difficult to simulate the cables, which are composed of a lot of strands, as three-dimensional models using the commercial code. The random numbers were used to simulate many kinds of contact patterns of the strands on the bonding surface for calculating the bonding area and the DC resistance of the butt joint. The calculated DC resistance decreases with an increase of cable filling factor in terminal. The calculated DC resistance of a 0.9 cable filling factor is about 0.48 n-Ohm, which is about one-tenth of that in the CS model coil test when not considering the electrical contact resistance. From this difference, the electrical contact resistance between the strands and copper sheet was calculated.