• 제목/요약/키워드: contact etch

검색결과 62건 처리시간 0.032초

Study of Surface Reaction and Gas Phase Chemistries in High Density C4F8/O2/Ar and C4F8/O2/Ar/CH2F2 Plasma for Contact Hole Etching

  • Kim, Gwan-Ha
    • Transactions on Electrical and Electronic Materials
    • /
    • 제16권2호
    • /
    • pp.90-94
    • /
    • 2015
  • In this study, the characterizations of oxide contact hole etching are investigated with C4F8/O2/Ar and CH2F2/C4F8/O2/ Ar plasma. As the percent composition of C4F8 in a C4F8/O2/Ar mixture increases, the amount of polymer deposited on the etched surface also increases because the CxFy polymer layer retards the reaction of oxygen atoms with PR. Adding CH2F2 into the C4F8/O2/Ar plasma increases the etch rate of the oxide and the selectivity of oxide to PR. The profile of contact holes was close to 90°, and no visible residue was seen in the SEM image at a C4F8/(C4F8+O2) ratio of 58%. The changes of chemical composition in the chamber were analyzed using optical emission spectroscopy, and the chemical reaction on the etched surface was investigated using X-ray photoelectron spectroscopy.

Optimization of a-IGZO Thin-Film Transistors for OLED Applications

  • Chung, Hyun-Joong;Yang, Hui-Won;Kim, Min-Kyu;Jeong, Jong-Han;Ahn, Tae-Kyung;Kim, Kwang-Suk;Kim, Eun-Hyun;Kim, Sung-Ho;Im, Jang-Soon;Choi, Jong-Hyun;Park, Jin-Seong;Jeong, Jae-Kyeong;Mo, Yeon-Gon;Kim, Hye-Dong
    • 한국정보디스플레이학회:학술대회논문집
    • /
    • 한국정보디스플레이학회 2008년도 International Meeting on Information Display
    • /
    • pp.1097-1100
    • /
    • 2008
  • We demonstrate that the performance of amorphous indium-gallium-zinc-oxide (IGZO) thin-film transistors (TFT) can be optimized by controlling the interfaces between IGZO and sandwiching insulators and by proper deposition of IGZO layer. Specifically, contact and channel resistances are decreased by reducing IGZO bulk resistance and optimizing dry-etch process, respectively. Field-effect mobility ($\mu_{FE}$) and subthreshold gate swing (S) are further enhanced by fine-tuning IGZO deposition condition.

  • PDF

나노패턴 구현을 위한 $\mu$CP 공정기술 ($\mu$CP Process Technology for Nanopattern Implementation)

  • 조정대;신영재;김광영
    • 한국정밀공학회:학술대회논문집
    • /
    • 한국정밀공학회 2003년도 춘계학술대회 논문집
    • /
    • pp.624-627
    • /
    • 2003
  • Microcontact printing (uCP) of alkanethiols on gold was the first representative of soft-lithography processes. This is an attempt to enhance the accuracy of classical to a precision comparable with optical lithography, creating a low-cost, large-area, and high-resolution patterning process. Microcontact printing relies on replication of a pattered PDMS stamp from a master to form an elastic stamp that can be inked with a SAM solution(monolayer -forming ink) using either immersion inking or contact inking. The inked PDMS stamp is then used to print a pattern that selectively protects the gold substrate during the subsequent etch.

  • PDF

오프셋 마스크를 이용하지 않는 새로운 자기 정합 폴리 실리콘 박막 트랜지스터 (A novel self-aligned offset gated polysilicon thin film transistor without an additional offset mask)

  • 민병혁;박철민;한민구
    • 전자공학회논문지A
    • /
    • 제32A권5호
    • /
    • pp.54-59
    • /
    • 1995
  • We have proposed a novel self-aligned offset gated polysilicon TFTs device without an offset mask in order to reduce a leakage current and suppress a kink effect. The photolithographic process steps of the new TFTs device are identical to those of conventional non-offset structure TFTs and an additional mask to fabricate an offset structure is not required in our device due to the self-aligned process. The new device has demonstrated a lower leakage current and a better ON/OFF current ratio compared with the conventional non-offset device. The new TFT device also exhibits a considerable reduction of the kink effect because a very thin film TFT devices may be easily fabricated due to the elimination of contact over-etch problem.

  • PDF

Analysis of Chemical and Morphological Changes of Phenol Formaldehyde-based Photoresist Surface caused by O2 Plasma

  • Shutov, D.A.;Kang, Seung-Youl;Baek, Kyu-Ha;Suh, Kyung-Soo;Min, Nam-Ki;Kwon, Kwang-Ho
    • Transactions on Electrical and Electronic Materials
    • /
    • 제8권5호
    • /
    • pp.211-214
    • /
    • 2007
  • Chemical and morphological changes of phenol formaldehyde-based photoresist after $O_2$ radiofrequency(RF) plasma treatment depending on exposure time and source power were investigated. It was found that etch rate of photoresist sharply increased after discharge turn on and reached a limit with increase in plasma exposure time. Contact angle measurements and X-ray photoelectron spectroscopy(XPS) analysis showed that the surface chemical structure become nearly constant after 15 sec of the treatment. Atomic force microprobe(AFM) measurements were shown that surface roughness was increased with plasma exposure time.

인산을 적용한 Ultra Definition 디스플레이 패널의 패턴 형성에 관한 연구 (A Study on Pattern Formation of Ultra Definition Display Panel Applying Phosphoric Acid)

  • 김민수;조을룡
    • 반도체디스플레이기술학회지
    • /
    • 제13권3호
    • /
    • pp.13-19
    • /
    • 2014
  • Phosphoric acid was used as etching agent instead of conventional peroxide - based chemicals for forming pattern of ultra definition display. Etchant was synthesized by mixing etching agent, oxidation agent, buffer solution, and additive into solvent, deionized water. Thicknesses of copper, main metal of ultra definition display, for etching, were 10,000 and $30,000{{\AA}}$. Etch stop of good low skew for proper pattern formation has been occurred at the content ratio of phosphoric acid 60 - 64%, nitric acid 4 - 5%, additive(potassium acetate) 1 - 3%. Buffer solution(acetic acid) decreased the metal contact angle $63.07^{\circ}$ to $42.49^{\circ}$ for benefiting pattern formation. Content variations on four components (phosphoric acid, nitric acid, acetic acid, potassium acetic acid) of the etchant with storage time were within 3 wt% after 24 hrs of etching work.

건식 식각 공정 시뮬레이션을 위한 효율적인 그림자 테스트 알고리즘과 토포그래피 진화에 대한 연구 (Efficient Shadow-Test Algorithm for the Simulation of Dry Etching and Topographical Evolution)

  • 권오섭;반용찬;원태영
    • 전자공학회논문지D
    • /
    • 제36D2호
    • /
    • pp.41-47
    • /
    • 1999
  • 본 논문에서는 플라즈마 건식 식각 공정을 모의 실험하기 위하여 셀 제거 방법을 적용하여 개발한 시뮬레이터의 성능을 보고한다. 마스크의 기하학적 형상에 의한 그림자 효과(shadow effect)를 고려하기 위한 알고리즘과, 오차의 누적을 막기 위한 알고리즘을 새로이 적용하였다. 입사하는 이온의 분포를 계산하기 위해서 해석적 모델과 몬테 카를로 방법을 모두 적용하였다. 또한 사용자가 유닉스(UNIX) 환경에서 공정 조건을 편리하게 입력할 수 있도록 그래픽 사용자 환경(graphic user interface, GUI)을 개발하였다. 개발된 3D-SURFILER(SURface proFILER)의 성능을 검증하기 위한 콘택 홀(contact hol) 구조의 시뮬레이션에서 셀의 수를 36,000($30{\times}40{\times}30$)으로 설정하여 시뮬레이션하였을 때 SUN ULTRA 1 시스템에서 약 10Mbyte의 메모리가 사용되었으며, 시뮬레이션 시간을 20분이었다. 종횡비(aspect ratio)가 1.57인 콘택 홀 구조에서 반응성 이온 식각(reactive ion etching, RIE)을 시뮬레이션하였으며, 이온의 증속 식각의 정도를 나타내는 손상 계수의 변화와 압력이 600mTorr일 때의 이온의 입사 분포에 의한 토포그래픽(topography) 진화를 시뮬레이션하였다.

  • PDF

Simultaneous Transfer and Patterning of CVD-Grown Graphene with No Polymeric Residues by Using a Metal Etch Mask

  • 장미;정진혁;;이내응
    • 한국진공학회:학술대회논문집
    • /
    • 한국진공학회 2013년도 제44회 동계 정기학술대회 초록집
    • /
    • pp.642-642
    • /
    • 2013
  • Graphene, two dimensional single layer of carbon atoms, has tremendous attention due to its superior property such as high electron mobility, high thermal conductivity and optical transparency. Especially, chemical vapor deposition (CVD) grown graphene has been used as a promising material for high quality and large-scale graphene film. Unfortunately, although CVD-grown graphene has strong advantages, application of the CVD-grown graphene is limited due to ineffective transfer process that delivers the graphene onto a desired substrate by using polymer support layer such as PMMA(polymethyl methacrylate). The transferred CVD-grown graphene has serious drawback due to remaining polymeric residues generated during transfer process, which induces the poor physical and electrical characteristics by a p-doping effect and impurity scattering. To solve such issue incurred during polymer transfer process of CVD-grown graphene, various approaches including thermal annealing, chemical cleaning, mechanical cleaning have been tried but were not successful in getting rid of polymeric residues. On the other hand, lithographical patterning of graphene is an essential step in any form of microelectronic processing and most of conventional lithographic techniques employ photoresist for the definition of graphene patterns on substrates. But, application of photoresist is undesirable because of the presence of residual polymers that contaminate the graphene surface consistent with the effects generated during transfer process. Therefore, in order to fully utilize the excellent properties of CVD-grown graphene, new approach of transfer and patterning techniques which can avoid polymeric residue problem needs to be developed. In this work, we carried out transfer and patterning process simultaneously with no polymeric residue by using a metal etch mask. The patterned thin gold layer was deposited on CVD-grown graphene instead of photoresists in order to make much cleaner and smoother surface and then transferred onto a desired substrate with PMMA, which does not directly contact with graphene surface. We compare the surface properties and patterning morphology of graphene by scanning electron microscopy (SEM), atomic force microscopy(AFM) and Raman spectroscopy. Comparison with the effect of residual polymer and metal on performance of graphene FET will be discussed.

  • PDF

Wet chemistry damage가 Nanopatterned p-ohmic electrode의 전기적/구조적 특성에 미치는 영향 (Influence of Wet Chemistry Damage on the Electrical and Structural Properties in the Wet Chemistry-Assisted Nanopatterned Ohmic Electrode)

  • 이영민;남효덕;장자순;김상묵;백종협
    • 한국전기전자재료학회:학술대회논문집
    • /
    • 한국전기전자재료학회 2008년도 추계학술대회 논문집 Vol.21
    • /
    • pp.150-150
    • /
    • 2008
  • 본 연구에서는 Wet chemistry damage가 Nanopatterned p-ohmic electrode에 미치는 영향을 연구하였다. Nanopattern은 Metal clustering을 이용하여, P-GaN와 Ohmic형성에 유리한 Pd을 50$\AA$ 적층한 후 Rapid Thermal Annealing방법으로 $850^{\circ}C$, $N_2$분위기에서 3min열처리를 하여 Pd Clustering mask 를 제작하였다. Wet etching은 $85^{\circ}C$, $H_3PO_4$조건에서 시간에 따라 Sample을 Dipping하는 방법으로 시행하였다 Ohmic test를 위해서 Circular - Transmission line Model 방법을 이용하였으며, Atomic Force Microscopy과 Parameter Analyzer로 Nanopatterned GaN surface위에 형성된 Ni/ Au Contact에서의 전기적 분석과, 표면구조분석을 시행하였다. AFM결과 Wet처리시간에 따라서 Etching형상 및 Etch rate이 영향을 받는 것이 확인되었고, Ohmic test에서 Wet chemistry처리에 의한 Tunneling parameter와 Schottky Barrier Height가 크게 증/감함을 관찰하였다. 이러한 결과들은 Wet처리에 의해서 발생된 Defect가 GaN의 표면과 하부에서 발생되며, Deep acceptor trap 및 transfer거동과 밀접한 관련이 있음을 확인 할 수 있었다. 보다 자세한 Transport 및 Wet chemical처리영향에 관한 형성 Mechanism은 후에 I-V-T, I-V, C-V, AFM결과 들을 활용하여 발표할 예정이다.

  • PDF

나노입자 마스크를 이용하여 제작한 초소수성 마이크로-나노 혼성구조 (Fabrication of Superhydrophobic Micro-Nano Hybrid Structures by Reactive Ion Etching with Au Nanoparticle Masks)

  • 이초연;윤석본;장건익;윤완수
    • 한국진공학회지
    • /
    • 제19권4호
    • /
    • pp.300-306
    • /
    • 2010
  • 소수성 고분자를 사용하여 제작한 마이크로구조에 금 나노입자를 마스크로 이용하는 반응성이온식각(RIE: Reactive Ion Etching)을 적용하여 초소수성을 갖는 마이크로-나노 혼성구조를 제작하였다. 소수성 고분자로는 PFPE (perfluoropolyether bisurethane methacrylate)를 사용하였으며 마이크로 단일구조는 PDMS (polydimethylsiloxane) 몰드를 사용하는 스탬핑 방식으로 제작하였다. 다양한 형태로 제작한 PFPE 마이크로 단일구조와 마이크로-나노 혼성구조의 표면 접촉각을 측정하여 표면 미세구조에 따른 소수성의 변화를 관찰하였다. 마이크로 단일구조의 경우 접촉각은 안정적인 값을 보이지 못하였으나 단일 구조에 나노입자를 사용한 식각을 적용해 나노구조가 형성됨에 따라 $150^{\circ}$ 이상의 접촉각을 갖는 초소수성 표면이 매우 높은 재현성으로 용이하게 형성되었다.