• Bulletin of the Korean Chemical Society
• /
• v.31 no.9
• /
• pp.2503-2508
• /
• 2010

ZnO thin films were grown on Si or $SiO_2$/Si substrates, at growth temperatures ranging from 150 to $400^{\circ}C$, by atomic layer deposition (ALD) using diethylzinc and water. Despite the large band gap of 3.3 eV, the ALD ZnO films show high n-type conductivity, i.e. low resistivity in the order of $10^{-3}\;{\Omega}cm$. In order to understand the high conductivity of ALD ZnO films, the films were characterized with X-ray diffraction, transmission electron microscopy, X-ray photoelectron spectroscopy, elastic recoil detection, Rutherford backscattering, Photoluminescence, and Raman spectroscopy. In addition, the various analytical data of the ZnO films were compared with those of ZnO single crystal. According to our analytical data, metallic zinc plays an important role for the high conductivity in ALD ZnO films. Therefore when the metallic zinc was additionally oxidized with ozone by a modified ALD sequence, the resistivity of ZnO films could be adjusted in a range of $3.8{\times}10^{-3}\;{\sim}\;19.0\;{\Omega}cm$ depending on the exposure time of ozone.

• Korean Journal of Materials Research
• /
• v.11 no.2
• /
• pp.115-119
• /
• 2001

The electrical properties of heavily drawn bundled Cu- Nb filamentary microcomposite wires were examined and correlated with the microstructural changes caused by thermomechanical treatments. The cross sectional shape of Nb filaments in wires fabricated by bundling and drawing appear straight or slightly curved. The different shape of Nb filaments is attributed to the break- up and cylinderization of Nb filaments during the bundling process at high temperatures. The resistivity of Cu-Nb microcomposites is predominantly controlled by electron scattering at Cu-Nb interfaces. The decrease of the conductivity below the annealing temperature of $400^{\circ}C$ is due to the increasing contribution of the scattering associated with coherency strains of needle- shaped precipitates. The slight decrease of the resistivity ratio (${\rho}_{295K}/{\rho}_{75K}$) is also due to the precipitation of Nb atoms. The increase in conductivity in Cu-Nb microcomposites at an annealing temperature of 50$0^{\circ}C$ is due to the coarsening and spheroidization of Nb filaments.

• Geophysics and Geophysical Exploration
• /
• v.6 no.2
• /
• pp.87-94
• /
• 2003

ULF geomagnetic field anomalies related to earthquakes have been reported and a mechnism that magnetic field variations could be generated by the induced telluric current due to the high frequency fluctuation of conductivity in a fault Bone have been proposed. In this study, we calculated electromagnetic anomalies using a simple fault model and investigated the possibility of significant perturbation. Since low frequency electromagnetic fields are modulated by the high frequency oscillation of conductivity and the modulated fields are concentrated in a narrow ULF band, the electromagnetic fields in ULF band could be perturbed significantly. The amplitude of electromagnetic field anomaly depends on various factors: the geometry and conductivity of fault zone, the magnitude and frequency of conductivity fluctuation, the resistivity structure of crust or mantle, the frequency bandwidth of observational data and so on. Therefore, it is strongly required to reveal the deep resistivity structure of crust a.: well ah the structure of fault zone and to ,select the optimal observation frequency band for the observation of electromagnetic activities related with earthquakes.

• Journal of the Korean Society of Groundwater Environment
• /
• v.2 no.2
• /
• pp.78-84
• /
• 1995

In 1983, 83 Wenner vertical electrical sounding(VES)s and 22 pumping tests had been carried out by Korea Agricultural Development Corporation(KADC) in Guam Myun, Yeoju Gun, Kyounggi Province. Also, 10 boreholes had been constructed in the area. Using these data electrical and hydraulic properties of aquifer in the Ganam area are investigated in this study. Assuming that the underground is 1-D, VES data are analyzed. Data analysis shows that the subsurface of study area can be interpreted as 4-layer structure and the 3rd layer which is regarded as aquifer has mean thickness of 10 m and mean resistivity of 506 ohm-m and rests on resistive bedrock. Under the circumstances, as most part of electric current flows parallel to the bedding, longitudinal unit conductance is an important parameter controlling VES curves and very closely correlates with transmissivity of aquifer in the study area. Thus, relation between longitudinal unit conductance and transmissivity is investigated in this study. Since resistivity and thickness of each layer are obtained from interpretation of VES data, the relations between transmissivity and resistivity, and between hydraulic conductivity and resistivity are also studied. Studies of such relations show that longitudinal conductance is proportional to transmissivity, and resistivity is inversely proportional to transmissivity and hydraulic conductivity.

• Journal of the Korean Ceramic Society
• /
• v.42 no.12 s.283
• /
• pp.833-841
• /
• 2005

The oxidation resistance and electrical conductivity of various commercial ferritic stainless steels including STS444 were tested in an air atmosphere at $700^{\circ}C$. Crofer22 developed specially for SOFC interconnect was also examined for the aim of comparing with the test results of STS444. Although STS444 exhibited higher oxidation resistance than Corfer22, the electrical conductivity of the scale formed on Crofer22 was higher, indicating that the resistivity of scale formed on Crofer22 is much lower than that of STS444. To gain a better understanding of the relation between oxidation behavior and electrical conductivity, the oxide scales formed on STS444 and Crofer22 were analyzed in terms of the structure, composition, and phase. Consequently, the influence of alloying elements on electrical conductivity of Fe-Cr alloys was discussed.

• Korean Journal of Materials Research
• /
• v.26 no.6
• /
• pp.293-297
• /
• 2016

Ni-C composite films were prepared by co-deposition using a combined technique of plasma CVD and ion beam sputtering deposition. Depending on the deposition conditions, Ni-C thin films manifested three kinds of microstructure: (1) nanocrystallites of non-equilibrium carbide of nickel, (2) amorphous Ni-C film, and (3) granular Ni-C film. The electrical resistivity was also found to vary from about $10^2{\mu}{\Omega}cm$ for the carbide films to about $10^4{\mu}{\Omega}cm$ for the amorphous Ni-C films. The Ni-C films deposited at ambient temperatures showed very low TCR values compared with that of metallic nickel film, and all the films showed ohmic characterization, even those in the amorphous state with very high resistivity. The TCR value decreased slightly with increasing of the flow rate of $CH_4$. For the films deposited at $200^{\circ}C$, TCR decreased with increasing $CH_4$ flow rate; especially, it changed sign from positive to negative at a $CH_4$ flow rate of 0.35 sccm. By increasing the $CH_4$ flow rate, the amorphous component in the film increased; thus, the portion of $Ni_3C$ grains separated from each other became larger, and the contribution to electrical conductivity due to thermally activated tunneling became dominant. This also accounts for the sign change of TCR when the filme was deposited at higher flow rate of $CH_4$. The microstructures of the Ni-C films deposited in these ways range from amorphous Ni-C alloy to granular structures with $Ni_3C$ nanocrystallites. These films are characterized by high resistivity and low TCR values; the electrical properties can be adjusted over a wide range by controlling the microstructures and compositions of the films.

• Korean Journal of Materials Research
• /
• v.19 no.4
• /
• pp.186-191
• /
• 2009

Thermoelectric power and resistivity are measured for the perovskite $LaNi_{1-x}Ti_xO_3$ ($x{\leq}0.5$) in the temperature range 77 K - 300 K. The measured thermoelectric power of $LaNi_{1-x}Ti_xO_3$ ($x{\leq}0.5$) increases linearly with temperature and is represented by A + BT. The x = 0.1 sample showed metallic behavior, the x = 0.3 showed metal and insulating transition around 150 K, and x = 0.5 showed insulating behavior the over the whole temperature range. The electrical resistivity of x = 0.1 shows linear temperature dependence over the whole temperature range and $T^2$ dependence. On the other hand, the electrical resistivity of x = 0.3 shows a linear relation between $ln{\rho}$ and $T^{-1/4}$ (variable range hopping mechanism) in the range of 77 K to 150 K. For x = 0.5, the temperature dependence of resistivity is characteristic of insulating materials; the resistivity data was fitted to an exponential law, such as ln(${\rho}/T$) and $T^{-1}$, which is usually attributed to a small polaron hopping mechanism. These experimental results are interpreted in terms of the spin polaron (x = 0.1) and variable range hopping (x = 0.3) or small polaron hopping (x = 0.5) of an almost localized $Ni^{3+}$ 3d polaron.

• Korean Journal of Materials Research
• /
• v.24 no.11
• /
• pp.604-609
• /
• 2014

The thermoelectric power and dc conductivity of $La_{2/3+x}TiO_{3-{\delta}}$ (x = 0, 0.13) were investigated. The thermoelectric power was negative between 80K and 300K. The measured thermoelectric power of x = 0.13 increased linearly with increased temperatures and was represented by $S_0+BT$. The x = 0 sample exhibited insulating behavior, while the x = 0.13 sample showed metallic behavior. The electric resistivity of x = 0.13 had a linear temperature dependence at high temperatures and a T3/2 dependence below about 100K. On the other hand, the electric resistivity of x = 0 has a linear relation between $ln{\rho}/T$ and 1/T in the range of 200 to 300K, and the activation energy for small polaron hopping was 0.23 eV. The temperature dependence of thermoelectric power and the resistivity of x = 0 suggests that the charge carriers responsible for conduction are strongly localized. This temperature dependence indicates that the charge carrier (x = 0) is an adiabatic small polaron. These experimental results are interpreted in terms of spin (x = 0.13) and small polaron (x = 0) hopping of almost localized Ti 3d electrons.

• Journal of Powder Materials
• /
• v.23 no.5
• /
• pp.358-363
• /
• 2016

Noncontact direct-printed conductive silver patterns with an enhanced electrical resistivity are fabricated using a silver ink with a mixture of silver nanoparticles and nanoplates. The microstructure and electrical resistivity of the silver pattern are systematically investigated as a function of the mixing ratio of the nanoparticles and nanoplates. The pattern, which is fabricated using a mixture with a mixing ratio of 3(nanoparticles):7(nanoplates) and sintered at $200^{\circ}C$ shows a highly dense and well-sintered microstructure and has a resistivity of $7.60{\mu}{\Omega}{\cdot}cm$. This originates a mutual synergistic effect through a combination of the sinterability of the nanoparticles and the packing ability of the nanoplates. This is a conductive material that can be used to fabricate noncontact direct-printed conductive patterns with excellent electrical conductivity for various flexible electronics applications, including solar cells, displays, RFIDs, and sensors.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2002.07b
• /
• pp.788-791
• /
• 2002

Tin doped indium oxide(ITO) films are highly conductive and transparent in the visible region whose property leads to the applications in solar cell, liquid crystal display, thermal heater, and other sensors. This paper investigated ITO films as a transparent conducting films for application of PDP. ITO films were grown on glass substrate by RF magnetron sputtering method. To achieve high transmittance and low resistivity, we examined the various film deposition such as substrate temperature, gas pressure, annealing temperature, and deposition time. We recommend the substrate temperature of $500^{\circ}C$ and post annealing of $200^{\circ}C$ in $O_2$ atmosphere for good conductivity and transmittance. From XRD examination, ITO films showed a preferred(222) orientation. As substrate temperature increased from RT to $500^{\circ}C$, the intensity of the (222) peak increased. The highest peak intensity was observed at a substrate temperature of $500^{\circ}C$. with the optimum growth conditions, ITO films showed resistivity of $1.04{\times}10^{-4}{\Omega}-cm$ and transmittance of 81.2% for a film 300nm thick in the wavelength range of the visible spectrum.