• Bulletin of the Korean Chemical Society
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• 제31권9호
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• pp.2503-2508
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• 2010

ZnO thin films were grown on Si or $SiO_2$/Si substrates, at growth temperatures ranging from 150 to $400^{\circ}C$, by atomic layer deposition (ALD) using diethylzinc and water. Despite the large band gap of 3.3 eV, the ALD ZnO films show high n-type conductivity, i.e. low resistivity in the order of $10^{-3}\;{\Omega}cm$. In order to understand the high conductivity of ALD ZnO films, the films were characterized with X-ray diffraction, transmission electron microscopy, X-ray photoelectron spectroscopy, elastic recoil detection, Rutherford backscattering, Photoluminescence, and Raman spectroscopy. In addition, the various analytical data of the ZnO films were compared with those of ZnO single crystal. According to our analytical data, metallic zinc plays an important role for the high conductivity in ALD ZnO films. Therefore when the metallic zinc was additionally oxidized with ozone by a modified ALD sequence, the resistivity of ZnO films could be adjusted in a range of $3.8{\times}10^{-3}\;{\sim}\;19.0\;{\Omega}cm$ depending on the exposure time of ozone.

• 한국재료학회지
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• 제11권2호
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• pp.115-119
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• 2001

다발체형성 제조기술을 이용하여 심하게 인발가공된 Cu-Nb 미세복합재료 전선의 전기적 특성과 열처리에 따른 미세조직 변화와의 관계에 대하여 연구하였다. 다발체형성과 인발공정에 의해 제조된 전선에서 Nb필라멘트 단면방향의 형태는 직선이거나 약간 굽은 형태로 나타났다 Nb필라멘트 형태의 차이는 고온에서의 다발체형성 제조공정중의 Nb필라멘트의 파손과 실린더화에 의해 발생하였다. Cu-Nb 미세복합재료의 비저항은 Cu-Nb 계면에서의 전자 산란에 의해 주로 결정된다. $400^{\circ}C$의 어닐링온도 이하에서 전도도의 감소는 침상형태 석출물의 정합변형율과 관계된 산란의 기여가 증가하기 때문이다. 비저항의 비 ($\rho_{295K}$/$\rho_{75K}$)의 약간의 감소는 또한 Nb원자의 석출 때문이다. 50$0^{\circ}C$의 어닐링온도에서 Cu-Nb 미세복합재료의 전도도 중가는 Nb필라멘트의 조대화와 구형화때문이다

• 지구물리와물리탐사
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• 제6권2호
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• pp.87-94
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• 2003

지진 발생을 전후로 ULF대역 지자기장의 진폭이 증가하는 현상이 관측 보고 되고 있으며, 그 원인으로서 단층대 전기전도도의 빠른 변동이 거론되고 있다. 즉 단층대 매질에 유도전류가 발생하면 전자기장의 변동이 발생할 수 있다고 하는 것이다. 본 연구에서는 2차원 단층구조 모델에 대한 수치 계산을 통해 전자기장 교란의 발생 가능성을 살펴보았다. 전기전도도가 ULF 대역의 주파수로 진동하면 낮은 주파수의 전자기장들이 ULF 대역의 주파수로 변조되어 좁은 주파수 대역에 중첩됨으로써 상대적으로 큰 전자기장의 교란을 일으킬 가능성이 있다. 단층대의 전기전도도와 형태, 전기전도도 변동의 크기와 주파수, 지각 및 맨틀의 전기비저항 구조, 관측 전자기장 주파수 대역의 폭 등에 의해 전자기장 교란의 관측가능성이 결정됨을 확인할 수 있었다. 지진과 관련된 전자기적 활동의 관측을 위해서는 단층대의 구조 뿐만 아니라 심부 지각의 전기비저항 구조의 연구가 이루어져야 하며, 관측 주파수 대역의 적절한 선택이 필요하다.

• 대한지하수환경학회지
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• 제2권2호
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• pp.78-84
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• 1995

1983년 경기도 여주군 가남면에서 83점의 Wenner 배열 수직전기비저항탐사와 22점의 양수시험 이 농업진흥공사에 의해 수행되었으며, 10개의 시추공도 개발되었다. 이번 연구에서는 위의 결과로 얻어진 자료들을 바탕으로 하여 대수층의 전기적, 수리적 특성에 관하여 고찰하였다. 지하를 1차원 구조로 가정하여 수직탐사 자료를 해석한 결과, 이 지역은 4층의 비저항 구조를 가지며, 대수층으로 생각되는 10 m의 평균 두께와 506 ohm-m의 평균비저항을 갖는 제 3층은 비저항이 높은 기반암 위에 위치하는 것으로 해석되었다. 이러한 경우에는 전류의 대부분의 흐름이 대수층에 평행하여 수평 단위 컨덕턴스(longitudinal unit conductance)가 겉보기비저항 곡선을 결정하는 중요한 변수가 되고 이 지역에서는 이것과 대수층의 투수량 계수가 서로 밀접하게 연관될 수 있기 때문에 이들 두 량 사이의 관계가 얻어졌다. 수직탐사의 해석에 의해 각 층의 비저항과 두께가 구해지므로 투수량계수와 비저항의 관계식, 수리전도도와 비저항 사이의 관계식도 얻어졌다. 이 지역의 투수량계수와 수평 단위 컨덕턴스 사이에는 비례하는 관계, 투수량수와 비저항 사이에는 반비례하는 관계, 수리전도도와 비저항 사이에도 반비례하는 관계가 있음이 밝혀졌다.

• 한국세라믹학회지
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• 제42권12호
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• pp.833-841
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• 2005

The oxidation resistance and electrical conductivity of various commercial ferritic stainless steels including STS444 were tested in an air atmosphere at $700^{\circ}C$. Crofer22 developed specially for SOFC interconnect was also examined for the aim of comparing with the test results of STS444. Although STS444 exhibited higher oxidation resistance than Corfer22, the electrical conductivity of the scale formed on Crofer22 was higher, indicating that the resistivity of scale formed on Crofer22 is much lower than that of STS444. To gain a better understanding of the relation between oxidation behavior and electrical conductivity, the oxide scales formed on STS444 and Crofer22 were analyzed in terms of the structure, composition, and phase. Consequently, the influence of alloying elements on electrical conductivity of Fe-Cr alloys was discussed.

• 한국재료학회지
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• 제26권6호
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• pp.293-297
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• 2016

Ni-C composite films were prepared by co-deposition using a combined technique of plasma CVD and ion beam sputtering deposition. Depending on the deposition conditions, Ni-C thin films manifested three kinds of microstructure: (1) nanocrystallites of non-equilibrium carbide of nickel, (2) amorphous Ni-C film, and (3) granular Ni-C film. The electrical resistivity was also found to vary from about $10^2{\mu}{\Omega}cm$ for the carbide films to about $10^4{\mu}{\Omega}cm$ for the amorphous Ni-C films. The Ni-C films deposited at ambient temperatures showed very low TCR values compared with that of metallic nickel film, and all the films showed ohmic characterization, even those in the amorphous state with very high resistivity. The TCR value decreased slightly with increasing of the flow rate of $CH_4$. For the films deposited at $200^{\circ}C$, TCR decreased with increasing $CH_4$ flow rate; especially, it changed sign from positive to negative at a $CH_4$ flow rate of 0.35 sccm. By increasing the $CH_4$ flow rate, the amorphous component in the film increased; thus, the portion of $Ni_3C$ grains separated from each other became larger, and the contribution to electrical conductivity due to thermally activated tunneling became dominant. This also accounts for the sign change of TCR when the filme was deposited at higher flow rate of $CH_4$. The microstructures of the Ni-C films deposited in these ways range from amorphous Ni-C alloy to granular structures with $Ni_3C$ nanocrystallites. These films are characterized by high resistivity and low TCR values; the electrical properties can be adjusted over a wide range by controlling the microstructures and compositions of the films.

• 한국재료학회지
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• 제19권4호
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• pp.186-191
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• 2009

Thermoelectric power and resistivity are measured for the perovskite $LaNi_{1-x}Ti_xO_3$ ($x{\leq}0.5$) in the temperature range 77 K - 300 K. The measured thermoelectric power of $LaNi_{1-x}Ti_xO_3$ ($x{\leq}0.5$) increases linearly with temperature and is represented by A + BT. The x = 0.1 sample showed metallic behavior, the x = 0.3 showed metal and insulating transition around 150 K, and x = 0.5 showed insulating behavior the over the whole temperature range. The electrical resistivity of x = 0.1 shows linear temperature dependence over the whole temperature range and $T^2$ dependence. On the other hand, the electrical resistivity of x = 0.3 shows a linear relation between $ln{\rho}$ and $T^{-1/4}$ (variable range hopping mechanism) in the range of 77 K to 150 K. For x = 0.5, the temperature dependence of resistivity is characteristic of insulating materials; the resistivity data was fitted to an exponential law, such as ln(${\rho}/T$) and $T^{-1}$, which is usually attributed to a small polaron hopping mechanism. These experimental results are interpreted in terms of the spin polaron (x = 0.1) and variable range hopping (x = 0.3) or small polaron hopping (x = 0.5) of an almost localized $Ni^{3+}$ 3d polaron.

• 한국재료학회지
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• 제24권11호
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• pp.604-609
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• 2014

The thermoelectric power and dc conductivity of $La_{2/3+x}TiO_{3-{\delta}}$ (x = 0, 0.13) were investigated. The thermoelectric power was negative between 80K and 300K. The measured thermoelectric power of x = 0.13 increased linearly with increased temperatures and was represented by $S_0+BT$. The x = 0 sample exhibited insulating behavior, while the x = 0.13 sample showed metallic behavior. The electric resistivity of x = 0.13 had a linear temperature dependence at high temperatures and a T3/2 dependence below about 100K. On the other hand, the electric resistivity of x = 0 has a linear relation between $ln{\rho}/T$ and 1/T in the range of 200 to 300K, and the activation energy for small polaron hopping was 0.23 eV. The temperature dependence of thermoelectric power and the resistivity of x = 0 suggests that the charge carriers responsible for conduction are strongly localized. This temperature dependence indicates that the charge carrier (x = 0) is an adiabatic small polaron. These experimental results are interpreted in terms of spin (x = 0.13) and small polaron (x = 0) hopping of almost localized Ti 3d electrons.

• 한국분말재료학회지
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• 제23권5호
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• pp.358-363
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• 2016

Noncontact direct-printed conductive silver patterns with an enhanced electrical resistivity are fabricated using a silver ink with a mixture of silver nanoparticles and nanoplates. The microstructure and electrical resistivity of the silver pattern are systematically investigated as a function of the mixing ratio of the nanoparticles and nanoplates. The pattern, which is fabricated using a mixture with a mixing ratio of 3(nanoparticles):7(nanoplates) and sintered at $200^{\circ}C$ shows a highly dense and well-sintered microstructure and has a resistivity of $7.60{\mu}{\Omega}{\cdot}cm$. This originates a mutual synergistic effect through a combination of the sinterability of the nanoparticles and the packing ability of the nanoplates. This is a conductive material that can be used to fabricate noncontact direct-printed conductive patterns with excellent electrical conductivity for various flexible electronics applications, including solar cells, displays, RFIDs, and sensors.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2002년도 하계학술대회 논문집 Vol.3 No.2
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• pp.788-791
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• 2002

Tin doped indium oxide(ITO) films are highly conductive and transparent in the visible region whose property leads to the applications in solar cell, liquid crystal display, thermal heater, and other sensors. This paper investigated ITO films as a transparent conducting films for application of PDP. ITO films were grown on glass substrate by RF magnetron sputtering method. To achieve high transmittance and low resistivity, we examined the various film deposition such as substrate temperature, gas pressure, annealing temperature, and deposition time. We recommend the substrate temperature of $500^{\circ}C$ and post annealing of $200^{\circ}C$ in $O_2$ atmosphere for good conductivity and transmittance. From XRD examination, ITO films showed a preferred(222) orientation. As substrate temperature increased from RT to $500^{\circ}C$, the intensity of the (222) peak increased. The highest peak intensity was observed at a substrate temperature of $500^{\circ}C$. with the optimum growth conditions, ITO films showed resistivity of $1.04{\times}10^{-4}{\Omega}-cm$ and transmittance of 81.2% for a film 300nm thick in the wavelength range of the visible spectrum.