• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2012.10a
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• pp.825-828
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• 2012

This paper have analyzed the change of breakdown voltage for conduction path of double gate(DG) MOSFET. The low breakdown voltage among the short channel effects of DGMOSFET have become obstacles of device operation. The analytical solution of Poisson's equation have been used to analyze the breakdown voltage, and Gaussian function been used as carrier distribution to analyze closely for experimental results. The change of breakdown voltages for conduction path have been analyzed for device parameters such as channel length, channel thickness, gate oxide thickness and doping concentration. Since this potential model has been verified in the previous papers, we have used this model to analyze the breakdown voltage. Resultly, we know the breakdown voltage is greatly influenced on the change of conduction path for device parameters of DGMOSFET.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.16 no.11
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• pp.2511-2516
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• 2012

This paper have analyzed the change of threshold voltage for conduction path of double gate(DG) MOSFET. The threshold voltage roll-off among the short channel effects of DGMOSFET have become obstacles of precise device operation. The analytical solution of Poisson's equation have been used to analyze the threshold voltage, and Gaussian function been used as carrier distribution to analyze closely for experimental results. The threshold voltages for conduction path have been analyzed for device parameters such as channel length, channel thickness, gate oxide thickness and doping concentration. Since this potential model has been verified in the previous papers, we have used this model to analyze the threshold voltage. Resultly, we know the threshold voltage is greatly influenced on the change of conduction path for device parameters of DGMOSFET.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.19 no.1
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• pp.156-162
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• 2015

This paper has analyzed how conduction path and electron concentration for the device parameters such as oxide thickness, channel doping, and top and bottom gate voltage influence on subthreshold swing of asymmetric double gate MOSFET. Compared with symmetric and asymmetric double gate MOSFET, asymmetric double gate MOSFET has the advantage that the factors to be able to control the short channel effects increase since top and bottom gate oxide thickness and voltages can be set differently. Therefore the conduction path and electron concentration for top and bottom gate oxide thickness and voltages are investigated, and it is found the optimum conditions that the degradation of subthreshold swing, severe short channel effects, can reduce. To obtain the analytical subthreshold swing, the analytical potential distribution is derived from Possion's equation. As a result, conduction path and electron concentration are greatly changed for device parameters, and subthreshold swing is influenced by conduction path and electron concentration of top and bottom.

• Design & Manufacturing
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• v.6 no.1
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• pp.95-100
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• 2012

In this study, a novel Cu composite sheet with embedded high electric conduction path was developed as another alternative for the interconnect materials possessing high electrical conductivity as well as high strength. The Cu composite sheet was fabricated by forming Ag conduction paths not within the interior but on the surface of a high strength Cu substrate by damascene electroplating process. As a result, the electrical conductivity increased by 40% thanks to mesh type Ag conduction paths, while the ultimate tensile strength decreased by 20%. The interfacial fracture resistance of Cu composite sheet prepared by damascene electroplating increased by above 50 times compared to Cu composite sheet by conventional electroplating. For feasibility test for practical application, a leadframe for LED module was manufactured by a progressive blanking and piercing processes, and the blanked surface profile was evaluated as a function of the volume fraction of Ag conduction paths. As Ag conduction path became finer, pressing formability improved.

• Korean Journal of Air-Conditioning and Refrigeration Engineering
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• v.17 no.3
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• pp.216-222
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• 2005

An experimental investigation was executed to determine the capacity degradation due to fin conduction and non-uniform refrigerant distribution in a multi-path evaporator with cross-counter flow. The finned-tube evaporator, which had a three-path and three-depth-row, was tested by controlling inlet quality, exit pressure, and exit superheat for each refrigerant path. The capacity reduction due to superheat unbalance between each path was as much as $25\%$ for non-cutting evaporator, even when the overall evaporator superheat was kept at a target value of $5.6^{\circ}C$. It indicates that the internal heat transfer within the evaporator assembly causes the partial capacity drop. The capacity of cutting-evaporator with respect to non-cutting evaporator was enhanced according to the increment of air flow rate when superheat or superheat unbalance increased.

• Transactions of the Korean Society of Mechanical Engineers B
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• v.40 no.2
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• pp.111-117
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• 2016

The primary concern of this research is to examine the phonon mean free path (MFP) spectrum contribution to heat conduction. The size effect of materials is determined by phonon MFP, and the size effect appears when the phonon MFP is similar to or less than the characteristic length of materials. Therefore, knowledge of the phonon MFP is essential to increase or decrease the heat conduction of a material for engineering applications, such as micro/nanosystems. In this study, frequency dependence of the phonon transport is considered using the Boltzmann transport equation based on a full phonon dispersion model. Additionally, the phonon MFP spectrums of in-plane and out-of-plane heat transport are investigated by varying the film thickness of the silicon layer from 41 nm to 177 nm. This will increase the understanding of anisotropic heat conduction in a SOI (Silicon-on-Insulator) transistor.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.18 no.8
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• pp.1925-1930
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• 2014

This paper has analyzed the relation of conduction path and subthreshold swing for doping profile in channel of asymmetric double gate(DG) MOSFET. Since the channel size of asymmetric DGMOSFET is greatly small and number of impurity is few, the high doping channel is analyzed. The analytical potential distribution is derived from Possion's equation, and Gaussian distribution function is used as doping profile. The conduction path and subthreshold swing are derived from this analytical potential distribution, and those are investigated for variables of doping profile, projected range and standard projected deviation, according to the change of channel length and thickness. As a result, subthreshold swing is reduced when conduction path is approaching to top gate, and that is increased with a decrease of channel length and a increase of channel thickness due to short channel effects.

• Journal of the Korean Ceramic Society
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• v.32 no.8
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• pp.957-965
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• 1995

The ionic conductivityof NASICON solid electrolytes was simulated by using Monte Carlo Method (MCM) based on a hopping model as functions of temoperature and composition. Two conduction paths were used : jumping from Na1 to Na2 and jumping from Na1 to Na2 and jumping from Na2 to Na2. Vacancy availability factor, V was affected by composition, temperature and the conduction paths. For β"-Alumina, it was known that the minimum of charge correlation factor, fc appears at the composition, p=0.5, but there was not shown the minimum of fc for NASICON. When the NASICON composition, x, approaches 2.5, the curve of In σT vs. 1/T* was shown Arrhenius behavior and also In (VWfc) was a linear function of 1/T*. The results of simulations on the considered conduction paths didn't agree with the experimental results. Thus it will be necessary to include the another Na sites as mid-Na site on the conduction path to obtain the better results.

• Korean Journal of Materials Research
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• v.13 no.11
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• pp.756-760
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• 2003

Two dimensional computer simulations were conducted on percolative structure in which second phases with various short diameter were arranged in matrix phase. In case of prohibiting the overlap among the second phases, the maximum area fraction of second phase arranged in matrix was increased with higher short diameter. In case of allowing the overlap among the second phases, the critical area fraction was increased with higher short diameter and the total number of distributed second phase was decreased. This results represented that thickness variation of short diameter by grain growth on the production processes affect significantly forming the completion path.

• Journal of the Korean Ceramic Society
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• v.33 no.6
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• pp.645-652
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• 1996

The ionic conductivity of NASICON (Na Super Ionic Conductor) solid electrolyte was simulated by using Monte Carlo Method (MCM)based on a hopping model. We assumed that the conduction path of Na ions is Na1→mid-Na→Na2 where the mid-Na sites are shallow potential sites to induce 'a breathing-like movement' of Na ions in the NASICON framework. The minimum of charge correlation factor Fc and the maximum of appeared at nearby x=2.0 The occupancy of mid-Na site affected the depth of potential barrier and the conduc-tivity of the NASICON. At above x=0.3 ln σT vs. 1/T* plots have been shown Arrhenius behavior but in (VWfc)vs. 1/T* have been shown the Arrhenius type tendency at x=1 MCM results accorded with the experi-mental procedure. The role of mid-Na on Na+ ion conduction could be explained by an additional driving force and a breating-like movement model for motions of Na+ ions in the NASICON framework. As we couldn't clearly remarked the model which is the better it seems reasonable to conclude that these hypothesies are suitable to explain the FIC behavior at NASICON.