• Title/Summary/Keyword: conduction path

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Modeling and Estimation of Cardiac Conduction System using Hidden Markov Model (HMM을 이용한 심장 전도 시스템의 모델화와 추정)

  • Halm, Zee-Hun;Park, Kwang-Suk
    • Proceedings of the KOSOMBE Conference
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    • v.1997 no.11
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    • pp.222-227
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    • 1997
  • To diagnose cardiac arrhythmia owing to reentry mechanism, cardiac conduction system was modeled by modified Hidden Markov modeled by evaluated. First, simulation of transient conduction states and output waves were made with initially assumed parametric values of cardiac muscle repolariztion time, conduction velocity and its automaticity. The output was a series of onset time and the name of the wave. Parameters determined the rate of beating, lengths of wave intervals, rate of abnormal beats, and the like. Several parameter sets were found to simulate normal sinus rhythm, supraventricular /ventricular tachycardia, atrial /vetricular extrasystole, etc. Then, utilizing the estimation theorems of Hidden Markov Model, the best conduction path was estimated given the previous output. With this modified estimation method, close matching between the simulated conduction path and the estimated one was confirmed.

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Analysis of Nano-Scale Heat Conduction in the Quantum Dot Superlattice by Ballistic Diffusive Approximation (Ballistic Diffusive Approximation에 의한 Quantum Dot Superlattice의 나노열전달 해석)

  • Kim, Won-Kap;Chung, Jae-Dong
    • Proceedings of the KSME Conference
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    • 2004.04a
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    • pp.1376-1381
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    • 2004
  • Understanding the thermal conductivity and heat transfer processes in superlattice structures is critical for the development of thermoelectric materials and optoelectronic devices based on quantum structures. $Chen^{(1)}$ developed ballistic diffusive equation(BDE) for alternatives of the Boltzmann equation that can be applied to the complex geometrical situation. In this study, a simulation code based on BDE is developed and applied to the 1-dimensional transient heat conduction across a thin film and transient 2-dimensional heat conduction across the film with heater. The obtained results are compared to the results of the $Chen^{(1)}$ and Yang and $Chen^{(1)}$. Finally, steady 2-dimensional heat conduction in the quantum dot superlattice are solved to obtain the equivalent thermal conductivity of the lattice and also compared with the experimental data from $Borca-Tasciuc^{(2)}$.

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A Study on the Electrical Properties of Amorphous Sb-Bi-Te Thin Films (비정질 Sb-Bi-Te 박막의 전기적 특성에 관한 연구)

  • ;;D. Mangalaraj
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.15 no.3
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    • pp.220-226
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    • 2002
  • Amorphous $Sb_{2-x}Bi_xTe_3$ (x = 0.0, 0.5 and 1.0) thin films were prepared by vacuum evaporation. The resistivity of 7he films decreases from 1.4{\times}10^{-2}$ to $8.84{\times}10^{-5}\Omega cm$ and the type of conductivity changes from p to n with the increase of the x value of the films. D.C. conduction studies on these films ate performed at various electric fields in the temperature range of 303-403 K. At low electric fields, two types of conduction mechanisms, i.e. the variable range hopping and the phonon assisted hopping are found to be responsible for the conduction, depending upon the temperature. The activation energy decreases from 0.082 to 0.076 eV in the temperature range of 303-363 K and from 0.47-0.456 eV in the second range of 363-403 K, indicating the shift of the Fermi level towards the conduction band edge and hence the change of the conduction from P to n type with the increase of the Bi concentration. Poole-Frankel emission dominates at high fields. The shape of the potential well of the localized centre is deduced and the mean free path of the charge carriers is also calculated.

An Analysis of Noise Characteristics according to PWM Method in 2-Phase Conduction Method (2상 통전 방식에서의 PWM 방식에 따른 소음 특성 분석)

  • Oh, Jae-Yoon;Cheong, Dal-Ho;Kim, Jung-Chul
    • Proceedings of the KIEE Conference
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    • 1999.07f
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    • pp.2632-2634
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    • 1999
  • In this paper, we analyze the characteristics of Motor Noise according to PWM method, especially in the case of 2-phase conduction method. There are two types of PWM methods used usually. One is Lower-PWM and the other is Upper&Lower PWM. Because there is a difference between freewheeling path of both methods, Current profiles of two methods are different. This makes the difference of Torque Ripple and so difference of Noise Performance. In this paper, the path will be analyzed and the comparison of Noise performance of two types of PWM methods will be showed by experiment results.

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Enhancement of the Critical Heat Flux by Using Heat Spreader

  • Yoon, Young-Sik;Hyup Yang;Kwak, Ho-Young
    • Journal of Mechanical Science and Technology
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    • v.17 no.7
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    • pp.1063-1072
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    • 2003
  • Direct immersion cooling has been considered as one of the promising methods to cool high power density chips. A fluorocarbon liquid such as FC-72, which is chemically and electrically compatible with microelectronic components, is known to be a proper coolant for direct immersion cooling. However, boiling in this dielectric fluid is characterized by its small value of the critical heat flux. In this experimental study, we tried to enhance the critical heat flux by increasing the nucleate boiling area in the heat spreader (Conductive Immersion Cooling Module). Heat nux of 2 MW/㎡ was successfully removed at the heat source temperature below 78$^{\circ}C$ in FC-72. Some modified boiling curves at high heat flux were obtained from these modules. Also, the concept of conduction path length is very important in enhancing the critical heat flux by increasing the heat spreader surface area where nucleate boiling occurs.

A Subthreshold Swing Model for Symmetric Double-Gate (DG) MOSFETs with Vertical Gaussian Doping

  • Tiwari, Pramod Kumar;Jit, S.
    • JSTS:Journal of Semiconductor Technology and Science
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    • v.10 no.2
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    • pp.107-117
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    • 2010
  • An analytical subthreshold swing model is presented for symmetric double-gate (DG) MOSFETs with Gaussian doping profile in vertical direction. The model is based on the effective conduction path effect (ECPE) concept of uniformly doped symmetric DG MOSFETs. The effect of channel doping on the subthreshold swing characteristics for non-uniformly doped device has been investigated. The model also includes the effect of various device parameters on the subthreshold swing characteristics of DG MOSFETs. The proposed model has been validated by comparing the analytical results with numerical simulation data obtained by using the commercially available $ATLAS^{TM}$ device simulator. The model is believed to provide a better physical insight and understanding of DG MOSFET devices operating in the subthreshold regime.

Analysis on I-V of DGMOSFET for Device Parameters (소자파라미터에 대한 DGMOSFET의 전류-전압 분석)

  • Han, Ji-Hyung;Jung, Hak-Kee;Jeong, Dong-Soo;Lee, Jong-In
    • Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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    • 2012.05a
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    • pp.709-712
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    • 2012
  • In this paper, current-voltage have been considered for DGMOSFET, using the analytical model. The Possion equation is used to analytical. Threshold voltage is defined as top gate voltage when drain current is $10^{-7}A$. Investigated current-voltage characteristics of channel length changed length of channel from 20nm to 100nm. Also, The changes of current-voltage have been investigated for various channel thickness and doping concentration using this model, given that these parameters are very important in design of DGMOSFET. The deviation of conduction path and the influence of conduction path on current-voltage have been considered according to the dimensional parameters of DGMOSFET.

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Analysis of Subthreshold Swing for Ratio of Channel Length and Thickness of Asymmetric Double Gate MOSFET (비대칭 DGMOSFET의 채널길이와 두께 비에 따른 문턱전압이하 스윙 분석)

  • Jung, Hakkee
    • Journal of the Korea Institute of Information and Communication Engineering
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    • v.19 no.3
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    • pp.581-586
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    • 2015
  • This paper has analyzed the variation of subthreshold swing for the ratio of channel length and thickness for asymmetric double gate MOSFET. The asymmetric double gate MOSFET has the advantage that the factors to control the short channel effects increase since top and bottom gate structure can be fabricated differently. The degradation of transport property due to rapid increase of subthreshold swing can be specially reduced in the case of reduction of channel length. However, channel thickness has to be reduced for decrease of channel length from scaling theory. The ratio of channel length vs. thickness becomes the most important factor to determine subthreshold swing. To analyze hermeneutically subthreshold swing, the analytical potential distribution is derived from Poisson's equation, and conduction path and subthreshold swing are calculated for various channel length and thickness. As a result, we know conduction path and subthreshold swing are changed for the ratio of channel length vs. thickness.

Contractible Beat Pipe for Conduction Cooled Superconducting Magnets

  • Kim, Seokho;Sangkwon Jeong;Jin, Hong-Beom;Kideok Sim
    • Progress in Superconductivity and Cryogenics
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    • v.5 no.1
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    • pp.76-80
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    • 2003
  • A contractible heat pipe is designed and tested to improve cooling performance of conduction cooled superconducting magnet. When the heat pipe temperature drops below the triple point temperature, heat pipe working fluid freezes to create low pressure. From this moment the heat pipe does net work any more (OFF state) and it just works as a heat leak path when the temperature of the first stage is higher than that of the second stage. Considering small cooling capacity of the second stage around 4.2 K, the conduction loss is not negligible. Therefore, the contractible heat pipe, made of a metal bellows and copper tubes, was considered to eliminate the conduction loss. Nitrogen and argon are as working fluid of heat pipe. The copper block is cooled down with these heat pipe and the cooling performance for each heat pipe is compared. At off state, the bellows is contracted due to the low pressure of heat pipe and the evaporator section of the heat pipe is detached about 3 mm from the second stage cold head of the cryocooler. In this way, we tan eliminate the conduction loss through the heat pipe wall.

Computation of Ionic Conductivity at NASICON Solid Electrolytes (II) Effects of mid-Na Sites on Na1-Na2 Conduction Paths (NASICON 고체 전해질의 이온 전도도 계산 (II) Na1-Na2 전도 경로에 미치는 mid-Na의 영향)

  • 최진삼;서양곤;강은태
    • Journal of the Korean Ceramic Society
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    • v.32 no.11
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    • pp.1292-1300
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    • 1995
  • The ionic conductivity of NASICON solid electrolytes was simulated by using Monte Carlo Method (MCM). There were included two conduction paths: (1) Na1-Na2 and (2) Na1-Na2 including Na2-Na2. We assumed that mid-Na ions provde an additional driving force for Na mobile ions due to the interionic repulsion between Na1 and Na2 ions. The inflection point of vacancy availability factor, V has been shown at nearby x=2, the maximum mid-Na ions. The inflection point of vacancy availability factor, V has been shown at nearby x=2, the maximum mid-Na sites are occupied. The effective jump frequency factor, V has been shown at nearby x=2, the maximum mid-Na sites are occupied. The effective jump frequency factor, W increased rapidly with the composition at low temperature, but decreased at high temperature region. On Na1-Na2 conduction path, the minimum of charge correlation factor, fc and the maximum of $\sigma$T were appeared at x=2.0. this indicated that mid-Na ions affect on the high ionic conductivity behavior. At the whole range of NASICON composition, 1n $\sigma$T vs. 1/T* plots have been shown Arrhenius behavior but 1n (VWFc) vs. 1/T* have been shown the Arrhenius type tendency at x=2, which mid-Na is being the maximum. The results of MCM agreed with the experimental one when the chosen saddle point value was 6$\varepsilon$ : 3$\varepsilon$. Here the calculated characteristic parameter of materials, K and the phase transition temperature were -4.001$\times$103 and 178$^{\circ}C$ (1/T*=1.92, 1000/T=2.22), respectively.

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