• Title/Summary/Keyword: conducting oxide

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Copper Oxide Growing Characteristics of PVC Insulated Wire and Application to the Fire Investigation (비닐절연전선의 산화물 성장 특성과 화재조사에의 적용)

  • Kim, Hyang-Kon;Choi, Chung-Seog;Kim, Dong-Ook;Choi, Hyo-Sang
    • The Transactions of the Korean Institute of Electrical Engineers P
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    • v.56 no.1
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    • pp.37-44
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    • 2007
  • This paper describes characteristics for copper oxide growth of polyvinyl chloride(PVC) insulated wires by series arc. In this experiment, 600V IV wires were used, and characteristics of oxide growth and ignition process were analyzed in case load was 300W, 460W and 600W, respectively. In the result of experiment, covering materials were molten, carbonized and ignited, whereas, oxidized materials were grown in conducting material. During copper oxide was growing, contact voltages and power dissipations increased. When there is copper oxide growth, the waveform of current showed sinusoidal waveform, and the waveform of voltage showed modified waveform. Oxidized materials were heated at about $905^{\circ}C$, surface structure showed irregular shapes, and cross-section showed multiple cracks. And, the results of this experiment were applied to the fire cause analysis of fire evidence collected at the fire scene.

Effects of oxygen partial pressure on electrical properties of transparent semiconducting indium zinc tin oxide thin films (IZTO 투명 반도체 박막의 전기적 특성에 대한 산소분압의 영향)

  • Lee, Keun-Young;Shin, Han-Jae;Han, Dong-Cheul;Kim, Sang-Woo;Lee, Do-Kyung
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2009.06a
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    • pp.93-94
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    • 2009
  • The influences of $O_2$ partial pressure on electrical properties of transparent semiconducting indium zinc tin oxide thin films deposited at room temperature by magnetron sputtering have been investigated. The experimental results show that by varying the $O_2$ partial pressure during deposition, electron mobilities of IZTO thin film can be controlled between 7 and $25\;cm^2/Vs$. For conducting films, the carrier concentration and resistivity are ${\sim}\;10^{21}\;cm^{-3}$ and ${\sim}\;10^{-4}\;{\Omega}\;cm$, respectively. Concerning semiconducting films, under 12% $O_2$ partial fraction, the electron concentration is $10^{18}\;cm^{-3}$, showing the promising candidate for the application of transparent thin film transistors.

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Microstructural Characterization of Composite Electrode Materials in Solid Oxide Fuel Cells via Image Processing Analysis

  • Bae, Seung-Muk;Jung, Hwa-Young;Lee, Jong-Ho;Hwang, Jin-Ha
    • Journal of the Korean Ceramic Society
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    • v.47 no.1
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    • pp.86-91
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    • 2010
  • Among various fuel cells, solid oxide fuel cells (SOFCs) offer the highest energy efficiency, when taking into account the thermal recycling of waste heat at high temperature. However, the highest efficiency and lowest pollution for a SOFC can be achieved through the sophisticated control of its constituent components such as electrodes, electrolytes, interconnects and sealing materials. The electrochemical conversion efficiency of a SOFC is particularly dependent upon the performance of its electrode materials. The electrode materials should meet highly stringent requirements to optimize cell performance. In particular, both mass and charge transport should easily occur simultaneously through the electrode structure. Matter transport or charge transport is critically related to the configuration and spatial disposition of the three constituent phases of a composite electrode, which are the ionic conducting phase, electronic conducting phase, and the pores. The current work places special emphasis on the quantification of this complex microstructure of composite electrodes. Digitized images are exploited in order to obtain the quantitative microstructural information, i.e., the size distributions and interconnectivities of each constituent component. This work reports regarding zirconia-based composite electrodes.

Physical Properties of ITO/PVDF as a function of Oxygen Partial Pressure (산소 분압 조절에 따른 ITO/PVDF 박막 물성 조절 연구)

  • Le, Sang-Yub;Kim, Ji-Hwan;Park, Dong-Hee;Byun, Dong-Jin;Choi, Won-Kook
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.21 no.10
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    • pp.923-929
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    • 2008
  • On the piezoelectric polymer, PVDF (poly vinylidene fluoride), the transparent conducting oxide (TCO) electrode material thin film was deposited by roll to roll sputtering process mentioned as a mass product-friendly process for display application. The deposition method for ITO Indium Tin Oxides) as our TCO was DC magnetron sputtering optimized for polymer substrate with the low process temperature. As a result, a high transparent and good conductive ITO/PVDF film was prepared. During the process, especially, the gas mixture ratio of Ar and Oxygen was concluded as an important factor for determining the film's physical properties. There were the optimum ranges for process conditions of mixture gas ratio for ITO/PVDF From these results, the doping mechanism between the oxygen atom and the metal element, Indium or Tin was highly influenced by oxygen partial pressure condition during the deposition process at ambient temperature, which gives the conductivity to oxide electrode, as generally accepted. With our studies, the process windows of TCO for display and other application can be expected.

Characterization of $SnO_2$ Thin Films Prepared by Thermal-CVD (열화학증착법으로 제조된 $SnO_2$박막의 특성)

  • Ryu, Deuk-Bae;Lee, Su-Wan
    • Korean Journal of Materials Research
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    • v.11 no.1
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    • pp.15-19
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    • 2001
  • Transparent and conducting tin oxide thin films were prepared on soda lime silicate glass by thermal chemical vapour deposition. Thin films were fabricated from mixtures of tetramethyltin (TMT) as a precursor, oxygen or oxygen containing ozone as an oxidant. The properties of fabricated tin oxide films are highly changed with variations of substrate temperature. Optimized thin films could be prepared on TMT, which flow rate of 8 sccm, oxygen flow rate of 150 sccm and substrate temperature of 38$0^{\circ}C$. We reduced deposition temperature about$ 180^{\circ}C$ by using of oxygen containing ozone instead of pure oxygen and resistivity of thin films was decreased from ~ ${\times}10^{-2}{\Omega}cm$ to ~${\times}10^{-3}{\Omega}cm$.

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Electrical and Optical Properties of Al-doped ZnO Thin Films (Al-doped ZnO 투명 전도성 박막(TCO)의 전기적 광학적 특성)

  • Hong, Youn-Jeong;Lee, Kyu-Mann;Kim, In-Woo
    • Journal of the Semiconductor & Display Technology
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    • v.6 no.3
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    • pp.35-39
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    • 2007
  • ITO(Indium Tin Oxide) is the most attractive TCO(Transparent Conducting Oxide) materials for LCD, PDP, OLEDs and solar cell, because of their high optical transparency and electrical conductivity. However due to the shortage of indium resource, hard processing at low temperature, and decrease of optical property during hydrogen plasma treatment, their applications to the display industries are limited. Thus, recently the Al-doped ZnO(AZO) has been studied to substitute ITO. In this study, we have investigated the effect of different substrate temperature(RT, $150^{\circ}C$, $225^{\circ}C$, $300^{\circ}C$) and working pressure(10 mTorr, 20 mTorr, 30 mTorr, 80 mTorr) on the characteristics of AZO(2 wt.% Al, 98 wt.% ZnO) films deposited by RF-magnetron sputtering. We have obtained AZO thin films deposited at low temperature and all the deposited AZO thin films are grown as colunmar. The average transmittance in the visible wavelength region is over 80% for all the films and transmittance improved with increasing substrate temperature. Electrical properties of the AZO films improved with increasing substrate temperature.

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Rapid thermal annealing effect of IZO transparent conducting oxide films grown by a box cathode sputtering (박스캐소드 스퍼터로 성장시킨 IZO 투명 전도막의 급속 열처리 효과)

  • Bae, Jung-Hyeok;Moon, Jong-Min;Jeong, Soon-Wook;Kim, Han-Ki;Yi, Min-Soo
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2006.06a
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    • pp.473-474
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    • 2006
  • We report on the rapid thermal annealing effect on the electrical, optical, and structural properties of IZO transparent conducting oxide films grown by box cathode sputtering (BCS). To investigate structural properties of rapid thermal annealed IZO films in $N_2$ atmosphere as a function of annealing temperature, syncrotron x-ray scattering experiment was carried out. It was shown that the amorphous structure of the IZO films was maintained until $400^{\circ}C$ because ZnO and $In_2O_3$ are immiscible and must undergo phase separation to allow crystallization. In addition, the IZO films grown at different Ar/$O_2$ ratio of 30/1.5 and 30/0 showed different preferred (222) and (440) orientation, respectively, with increase of rapid thermal annealing temperature. The electrical properties of the OLED with rapid thermal annealed IZO anode was degraded as rapid thermal annealing temperature of IZO increased. This indicates the amorphous IZO anode is more beneficial to make high-quality OLEDs.

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Materials and Characteristics of Emerging Transparent Electrodes (차세대 투명전극 소재의 종류와 특성)

  • Chung, Moon Hyun;Kim, Seyul;Yoo, Dohyuk;Kim, Jung Hyun
    • Applied Chemistry for Engineering
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    • v.25 no.3
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    • pp.242-248
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    • 2014
  • Flexibility of a transparent device has been required in accordance with miniaturization and mobilization needs in recent industry. The most representative material used as a transparent electrode is indium tin oxide (ITO). However, a couple of disadvantages of ITO are the exhaustion of natural resource of indium and its inflexibility due to inorganic substance. To overcome the limit of ITO, a variety of alternative materials have been researched on development of transparent electrodes and its properties through composite materials. In this review, we classify some of emerged materials with their general studies.

COIN형 리튬 폴리머전지의 충방전 특성

  • 박수길;박종은;손원근;이흥기;김상욱;이주성
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 1997.11a
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    • pp.497-500
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    • 1997
  • Conducting polymer is new material in lithium secondary battery. conducting polymer has a lot of merit which is flexible and good handing so that this material is used battery system, solid polymer electrolytes airs used PEO(Polyethylene oxide) and PEO/PMMA branding material adding by liquid plasticizer or lithium salt polymer electrolyte which is added liquid plasticizer, lithium salt decreased the crystallity and thermal stability is over than 13$0^{\circ}C$. it is very useful tn apply lithium secondary battery system.

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