• Journal of the Microelectronics and Packaging Society
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• v.29 no.4
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• pp.83-87
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• 2022

Recently, as the thickness of the semiconductor package becomes thinner, warpage has become a major issue. Since the warpage is caused by differences in material properties between package components, it is essential to precisely evaluate the material properties of the EMC(Epoxy molding compound), one of the main components, to predict the warpage accurately. Especially, the cure shrinkage of the EMC is generated during the curing process, and among them, the effective cure shrinkage that occurs after the gelation point is a key factor in warpage. In this study, the gelation point of the EMC was defined from the dissipation factor measured using the dielectric sensor during the curing process similar with actual semiconductor package. In addition, DSC (Differential scanning calorimetry) test and rheometer test were conducted to analyze the dielectrometry measurement. As a result, the dielectrometry was verified to be an effective method for monitoring the curing status of the EMC. Simultaneously, the strain transition of the EMC during the curing process was measured using the FBG (Fiber Bragg grating) sensor. From these results, the effective cure shrinkage of the EMC during the curing process was measured.

• Journal of the Microelectronics and Packaging Society
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• v.31 no.1
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• pp.35-42
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• 2024

Recently, with the miniaturization and high integration of semiconductor chips, the bump bridge phenomenon caused by fine pitches is drawing attention as a problem. Accordingly, Cu pillar bump, which can minimize the bump bridge phenomenon, is widely applied in the semiconductor package industry for fine pitch applications. When exposed to a high-temperature environment, the thickness of the intermetallic compound (IMC) formed at the joint interface increases, and at the same time, Kirkendall void is formed and grown inside some IMC/Cu and IMC interfaces. Therefore, it is important to control the excessive growth of IMC and the formation and growth of Kirkendall voids because they weaken the mechanical reliability of the joints. Therefore, in this study, isothermal aging evaluation of Cu pillar bump joints with a CS (Cu+ Sn-1.8Ag Solder) structure was performed and the corresponding results was reported.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2005.11a
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• pp.258-259
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• 2005

[ $CuInSe_2$ ] thin films were fabricated at various fabrication conditions (substrate temperature, sputtering pressure, BC/RF power, vapor deposition, heat treatment). And structural and electrical properties were measured in order to certify optimum conditions for growth of the ternary compound semiconductor $CuInSe_2$ thin films with stoichiometric composition. $CuInSe_2$ thin film was well made at the heat treatment of 500[$^{\circ}C$] of SLG/Cu/In/Se stacked elemental layer which was prepared by sputter and thermal evaporator, and chemical composition of the thin film was analyzed nearly as the proportion of 1 : 1 : 2. At the same time, carrier concentration, hall mobility and resistivity of the thin films was $1.27\sim9.88\times10^{17}[cm^{-3}]$, $49.95\sim185[cm^2/V{\cdot}s]$ and $10^{-1}\sim10^{-2}[\Omega{\cdot}cm]$, respectively

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.11a
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• pp.51-51
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• 2009

In this paper, we proposed GaN trench Static Induction Transistor(SIT). Because The compound semiconductor had superior thermal characteristics, GaN and SiC power devices is next generation power semiconductor devices. We carried out modeling of GaN SIT with 2-D device and process simulator. As a result of modeling, we obtained 340V breakdown voltage. The channel thickness was 3um and the channel doping concentration is 1e17cm-3. And we carried out thermal characteristics, too.

• ETRI Journal
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• v.19 no.2
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• pp.35-47
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• 1997

A power amplifier operating at 3.3 V has been developed for CDMA/AMPS dual-mode cellular phones. It consists of linear GaAs power MESFET's, a new gate bias control circuit, and an output matching circuit which prevents the drain terminal of the second MESF from generating the harmonics. The relationship between the intermodulation distortion and the spectral regrowth of the power amplifier has been investigated with gate bias by using the two-tone test method and the adjacent channel leakage power ratio (ACPR) method of CDMA signals. The dissipation power of the power amplifier with a gate bias control circuit is minimized to below 1000 mW in the range of the low power levels while satisfying the ACPR of less than -26 dBc for CDMA mode. The ACPR of the power amplifier is measured to be -33 dBc at a high output power of 26 dBm.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.22 no.12
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• pp.1018-1022
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• 2009

In this paper, we proposed GaN trench Static Induction Transistor(SIT). Because The compound semiconductor had superior thermal characteristics, GaN and SiC power devices is next generation power semiconductor devices. We carried out modeling of GaN SIT with 2-D device and process simulator. As a result of modeling, we obtained 340 V breakdown voltage. The channel thickness was 3 urn and the channel doping concentration is $1e17\;cm^{-3}$. And we carried out thermal characteristics, too.

• Journal of Electrical Engineering and Technology
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• v.6 no.4
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• pp.535-538
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• 2011

The electromodulation methods of photoreflectanceand the related technique of contactless electroreflectance(CER) are valuable tools in the evaluation of important device parameters for structures such as heterojunction bipolar transistors, pseudomorphic high electron mobility transistors, and quantum dots(QDs). CER is a very general principle of experimental physics. Instead of measuring the optical reflectance of the material, the derivative with respect to a modulating electric field is evaluated. This procedure generates sharp, differential-like spectra in the region of interband (intersubband) transitions. We conduct electric-optical studies of both GaAs layers and InAs selfassembled QDs grown by molecular beam epitaxy. Strong GaAsbandgap energy is measured in both structures. In the case of lnAs monolayers in GaAs matrices, the strong GaAsbandgap energy is caused by the lateral quantum confinement.

• Proceedings of the KIEE Conference
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• 1995.11a
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• pp.370-372
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• 1995

This paper mainly, describes the electrical characteristics caused by the change of structure in solid state of specimen by electron beam irradiation of high temperature-low expension type molding materials of power semiconductor element. The experiments on physical properties and electrical characteristics for the specimen irradiated electron beam are carried ont. For the investigation on physical properties, XRD analysis is used. And for the experiment of electrical characteristics, measurement of volumn resistivity is used.

• Proceedings of the Korean Society Of Semiconductor Equipment Technology
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• 2006.05a
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• pp.202-205
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• 2006

Recently, high vacuum pumps are widely used in the semi-conduction and liquid-crystal display ( LCD ) process. The composite-type high vacuum pumps are widely used in the various processes. In this study, the pumping performance of composite-type molecular pumps has been investigated experimentally. The experimented pumps are a compound molecular pump ( CMP ) and hybrid molecular pump ( HMP ). The CMP consists with helical-type drag pump, at lower part, and with turbomolecular pump ( TMP ), at upper part. The HMP consists with disk-type drag pump, at lower part, and with TMP, at upper part. The experiments are performed in the outlet pressure of $0.2\;{\sim}\;533\;Pa$. We have measured the ultimate pressure, compression ratio, and pumping speed

• The Transactions of the Korean Institute of Electrical Engineers
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• v.43 no.3
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• pp.420-431
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• 1994

The HgCdTe material, which is II-VI compound semiconductor, is important materials for the fabrication of the infrared detectros. To suggest the model of accurate MIS C-V calculation for narrow band gap semiconductors such as HgCdTe, non-parabolicity from k.p theory and degeneracy effect are considered. And partially ionized effect and compensation effect which are material's properties are also considerd. Especially, degenerated material C-V characteristics from Fermi-Dirac statistics and exact charge theory are presented to get more accurate analysis of the experimental results. Also the comparison with calculation results between the general MIS theory from Boltzmann appoximation method and this model which is considered the narrow band gap semiconductor properties, show that this model is more useful theory to determination of accurate low and high frequency C-V characteristics.