• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 1998년도 추계학술대회 논문집
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• pp.151-154
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• 1998

We have investigated a correlation of the electrical properties of the Pd/Ge/Pd/Ti/Au ohmic contact on n-InGaAs with its microstructures for the high temperature application of compound semiconductor devices. The samples were heat-treated by the rapid thermal annealing at various temperatures. In the contact system, moderately good specific contact resistance was obtained even before annealing because of the low metals-InGaAs barrier height, and better ohmic performances were observed by annealing up to 400˚C. But the ohmic performance was degraded after annealing at 450˚C due to the increment of Pd$_2$Ga$\sub$5/ phases.

• Progress in Superconductivity
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• 제10권2호
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• pp.123-127
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• 2009

NaFeAs recently observed superconductivity with the maximum $T_c{\approx}25$ K is investigated using first principles approach. We will address briefly the electronic structure and contrast other superconducting pnictides. This system shows strong two-dimensionality and reduction of flatness in the Fermi surfaces undermines tendencies of magnetic or charge instabilities. As observed in other superconducting pnictides, $Q_M=(\pi,\pi,0)$ antiferromagnetic ordering, which has not been observed clearly yet in this compound, is energetically favored. However, contrast to other superconducting pnictides, the density of states in this ordering shows considerable electron-hole asymmetry, implying efficiency of hole-doping than electron-doping to enhance $T_c$.

• 대한전자공학회논문지
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• 제25권8호
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• pp.959-965
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• 1988

Zinc diffusion characteristics and its applicabilities have been studied using an open-tube system. Thermal decomposition of arsenide(As) at gallium arsenide(GaAs) wafer surface was well inhibited by using Ga: poly-GaAs: Zn compositon as a diffusion source. Junction depth was obtained as 4.6x10**7\ulcorner exp)-1.25/kT) where activation energy of diffusion was 1.25eV. From Boltzmann-matano analysis, it could be identified that concentration dependencies of Zn diffusivity well consisted with those of kick-out model. The ideality factor of p+-n junction formed by Zn diffusion was about 1.6 and infrared light intensity was linearly varied in the range of sixty folds. It is concluded frodm these results that Zn diffuses according to kick-out model, and open-tube method is applicable to compound semiconductor devices.

• 대한전자공학회논문지
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• 제26권11호
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• pp.1736-1742
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• 1989

In this thesis, to verify input-output characteristics of GaAs MESFET, light is illuminated to C-band oscillator which already designed and manufactured, thus input-output variation of GaAs MESFET is to be shown. Experimental results of two kinds of optical effects, optical tuning and opticla switching, of GaAs MESFET Oscillators are presented. For optical tuning, the Oscillation frequency decreases with optical illumination and the Oscillator power output generally increases with optical illumination, the increase being around 1 to 3 dBm at 1mW/mm\ulcornerlight intensity. While the DC-lingt illuminated Oscillator response data provide information of the optical senditivity of GaAs-MESFET Oscillators. Pulse-light illuminated transient response data can be invoked to understand the detailed optical-electrical interaction mechanisms response. Thus, it is shown that direct control of micro-devices is realisable, if we use optical effect of GaAs semiconductor compound.

• JSTS:Journal of Semiconductor Technology and Science
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• 제16권5호
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• pp.630-634
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• 2016

We report the computer aided design results for a GaSb/InAs broken-gap gate all around nanowire tunneling FET (TFET). In designing, the semi-empirical tight-binding (TB) method using $sp3d5s^*$ is used as band structure model to produce the bulk properties. The calculated band structure is cooperated with open boundary conditions (OBCs) and a three-dimensional $Schr{\ddot{o}}dinger$-Poisson solver to execute quantum transport simulators. We find an device configuration for the operation voltage of 0.3 V which exhibit desired low sub-threshold swing (< 60 mV/dec) by adopting receded gate configuration while maintaining the high current characteristic ($I_{ON}$ > $100 {\mu}A/{\mu}m$) that broken-gap TFETs normally have.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2008년도 International Meeting on Information Display
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• pp.820-822
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• 2008

Pentacene has excellent semi-conducting characteristics. But pentacene practically used in OTFTs gives rise to problems mainly due to its sensitivity to oxygen and its very low solubility. In order to make up the problems, 6,13-disubstituted pentacene derivative was synthesized and characterized. The properties of the compound were characterized by FT-IR, NMR and we measured the charge transport mobility and the on/off current ratios.

• JSTS:Journal of Semiconductor Technology and Science
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• 제6권3호
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• pp.182-188
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• 2006

An artificial neural network model for the microwave characteristics of an InGaAs/InP hemt for 70 nm gate length has been developed. The small-signal microwave parameters have been evaluated to determine the transconductance and drain-conductance. We have further investigated the frequency characteristics of the device. The neural network training have been done using the three layer architecture using Levenberg-Marqaurdt Backpropagation algorithm. The results have been compared with the experimental data, which shows a close agreement and the validity of our proposed model.

• 한국경영과학회:학술대회논문집
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• 대한산업공학회/한국경영과학회 2000년도 춘계공동학술대회 논문집
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• pp.201-204
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• 2000

본 연구의 목적은 화합물 반도체를 생산하는 중소기업의 정보시스템을 설계하고 개발하여 적용하는데 있다. 제품의 수주에서 일정계획수립, 제품 재고관리 및 원·부자재 관리, 생산 가동율 등 생산활동전반에 걸친 업무 흐름을 분석하여 이에 사용되는 기초정보를 얻어내고, 이들 기반으로 관리자를 위한 관리정보와 의사결정자를 위한 경영정보를 Web상에 가시화 하는 시스템을 개발한다. 인터넷을 활용함으로써 기업 정보를 원격지에서 조회, 검색 할 수 있고 빠른 의사결정을 지원할 수 있도록 한다. 또한 기업 내부의 인트라넷 시스템과 연동하여 부서간 업무연락 및 정보시스템에서 발생하는 의사결정 요구사항을 쌍 방향으로 전달함으로써 그 활용도를 더욱 높인다. 본 시스템은 영업, 물류, 생산, 구매, 자재 인사, 회계 개발 등 기업 전체에 대한 자원관리를 위해 설계되었다. 개발된 시스템은 주문/수주정보관리, 제품재고관리, 원·부자재관리, 공정관리, 입출고 관리 등으로 구성되어 있다. 중소기업환경에 적합한 MS-SQL Server를 DB server로 사용하였고 Windows-NT기반의 ASP ( Active Server Page)를 사용하여 전 모듈을 개발함으로써 인터넷이 지원되는 모든 곳에서 접근 가능하도록 하였다.

• JSTS:Journal of Semiconductor Technology and Science
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• 제9권2호
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• pp.117-123
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• 2009

$Pb_{x}Cd_{1-x}S$ films are prepared in the composition range of 0.05${\leq}x{\leq}$0.25, using a chemical bath deposition growth technique under optimum conditions amide at realizing good photo response. The x-ray diffraction results show that the films are of PbS-CdS composite with individual CdS and PbS planes. The films exhibit two direct band gaps, 2.4 eV attributed to CdS, while the other varies continuously from 2.4 eV to 1.3 eV. The films surface morphology is smooth with crystallite, whose grain size increases with increasing mole fraction (x). The decrease in band gap with increase in lead concentration suggests inter-metallic compound of PbS (Eg=0.41 eV) with CdS (Eg=2.4 eV)

• 한국진공학회:학술대회논문집
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• 한국진공학회 2010년도 제39회 하계학술대회 초록집
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• pp.295-295
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• 2010

Nanoparticles of the compound semiconductor, Cu(In, Ga)Se2 (CIGS), were synthesized in solution under ambient pressure below $100^{\circ}C$ and characterized by powder X-ray diffraction (XRD), scanning electron microscopy (SEM), optical absorption spectroscopy and energy-dispersive X-ray (EDX) analyses. These materials have chalcopyrite crystal structures and the particle sizes less than 100 nm. Synthetic conditions were studied for the crystallized CIGS nanoparticles formation to prevent from side products of Cu2Se, Cu2-xSe, and CuSe etc. The single phase CIGS nanoparticles were applied to coating of thin films photovoltaic cells. The electro deposition of CIGS thin films is also a good non-vacuum technology and under investigation. In aqueous solutions, the different chemical compositions of CIGS thin films were obtained, depending on pH, concentration of starting materials and deposition potentials. The surface morphology of the prepared CIGS thin films depends on the complexing ligands to the solutions during the electrochemical deposition.