• 대한금속재료학회지
• /
• 제47권5호
• /
• pp.267-273
• /
• 2009

Three types of structural intermetallic compounds, $Ni_3Al$, NiAl and TiAl, having each single phase structure without pores were produced by arc-melting process. Their sliding wear properties were investigated against a hardened tool steel. It was shown that the wear of the intermetallic compounds was hardly occurred against the hardened tool steel. TiAl compound showed the best wear resistance among them. In this case, wear was preferentially occurred on the surface of the hardened tool steel of the mating material which has higher hardness. It could be found that the wear mode on intermetallics without pores by arc-melting process was different from that on its porous layer coated on steel by combustion synthesis.

• 대한금속재료학회지
• /
• 제48권2호
• /
• pp.141-147
• /
• 2010

An Ni-Al intermetallic coating has been produced by induction heating on mild steel. The effect of the induction heating conditions on the microstructure of the coating has been investigated. The reaction synthesis of the intermetallic compounds was promoted while increasing the heating rate and the holding time at reaction temperature. Especially, an NiAl phase corresponding to the initial composition of mixed powder was predominantly formed. However, the synthesis at low reaction temperatures occurred by solid state diffusion during the holding time and an Fe-Al reaction layer was formed at the interface with the substrate, regardless of the heating rate. The combustion synthesis of the intermetallic compound occurred at a temperature higher than 1023 K and resulted in an almost single phase NiAl structure.

• 대한약학회:학술대회논문집
• /
• 대한약학회 2002년도 Proceedings of the Convention of the Pharmaceutical Society of Korea Vol.2
• /
• pp.371.2-371.2
• /
• 2002

Bioassay-directed chromatographic fractionation of a methylene chloride extract of Ailanthus altisshima indicated the presence of 20(S). 24(R), epoxy-25-hydroxydammarane-3-one(compound 1. ocotillone). which was isolated from this plant for the first time. Antimicrobial activity of compound 1 was measured by its degree of growth inhibition against bacterial and fungal cells and by a hemolytic assay with human erythrocytes, respectively. (omitted)

• 한국진공학회:학술대회논문집
• /
• 한국진공학회 2014년도 제46회 동계 정기학술대회 초록집
• /
• pp.304.2-304.2
• /
• 2014

Chalcogenides (Te,Se) and pnictogens(Bi,Sb) materials have been widely investigated as thermoelectric materials. Especially, Bi2Te3 (Bismuth telluride) compound thermoelectric materials in thin film and nanowires are known to have the highest thermoelectric figure of merit ZT at room temperature. Currently, the thermoelectric material research is mostly driven in two directions: (1) enhancing the Seebeck coefficient, electrical conductivity using quantum confinement effects and (2) decreasing thermal conductivity using phonon scattering effect. Herein we demonstrated influence of annealing temperature on structural and thermoelectrical properties of Bismuth-telluride-selenide ternary compound thin film. Te-rich Bismuth-telluride-selenide ternary compound thin film prepared co-deposited by thermal evaporation techniques. After annealing treatment, co-deposited thin film was transformed amorphous phase to Bi2Te3-Bi2Te2Se1 polycrystalline thin film. In the experiment, to investigate the structural and thermoelectric characteristics of Bi2Te3-i2Te2Se1 films, we measured Rutherford Backscattering spectrometry (RBS), X-ray diffraction (XRD), Raman spectroscopy, Scanning eletron microscopy (SEM), Transmission electron microscopy (TEM), Seebeck coefficient measurement and Hall measurement. After annealing treatment, electrical conductivity and Seebeck coefficient was increased by defect states dominated by selenium vacant sites. These charged selenium vacancies behave as electron donors, resulting in carrier concentration was increased. Moreover, Thermal conductivity was significantly decreased because phonon scattering was enhanced through the grain boundary in Bi2Te3-Bi2Te2Se1 polycrystalline compound. As a result, The enhancement of thermoelectric figure-of-merit could be obtained by optimal annealing treatment.

• Applied Biological Chemistry
• /
• 제39권5호
• /
• pp.379-383
• /
• 1996

조생종 쌀인 오대벼 품종을 대상으로 종자의 배유세포에 있는 전분복합체와 단백질체의 외부형태 및 미세 구조의 특징을 광학현미경과 전자현미경으로 관찰하였다. 배유세포는 긴 막대모양으로 세로 단면이 장방형 또는 마름모형을 하고 있고, 세포벽은 $0.5\;{\mu}m$의 두께로 균질한 막상 구조물로 이루어져 있다. 또한, 세포내에는 구형 또는 타원형의 전분복합체가 치밀하게 채워져 있으며, 직경이 $18{\sim}25\;{\mu}m$로 다양한 크기로 존재하였다. 전분복합체는 12면체 또는 14면체의 중앙 전분과립을 중심으로 약 $5\;{\mu}m$ 크기의 전분과립들이 동심원상으로 2 내지 3층으로 형성되어 있다. 배유세포에서 단백질체는 호분층에서 보다 아주 드물게 관찰되었지만, 전분복합체의 주변에 인립하여 산재하고 있다. 단백질체는 직경이 약 $3\;{\mu}m$로 구형 또는 난원형의 형태를 하고 있으며 미세구조적으로 중심부는 전자밀도가 높게, 한계막의 주변부는 비교적 전자밀도가 낮게 관찰되었다.

• 한국재료학회지
• /
• 제18권1호
• /
• pp.38-44
• /
• 2008

The micro-structural changes, strength characteristics, and micro-fractural behaviors at the joint interface between a Sn-4.0wt%Ag-0.5wt%Cu solder ball and UBM treated by isothermal aging are reported. From the reflow process for the joint interface, a small amount of intermetallic compound was formed. With an increase in the isothermal aging time, the type and amount of the intermetallic compound changed. The interface without an isothermal treatment showed a ductile fracture. However, with an increase in the aging time, a brittle fracture occurred on the interface due mainly to the increase in the size of the intermetallic compounds and voids. As a result, a drastic degradation in the shear strength was observed. From a microshear test by a scanning electron microscope, the generation of micro-cracks was initiated from the voids at the joint interface. They propagated along the same interface, resulting in coalescence with neighboring cracks into larger cracks. With an increase in the aging time, the generation of the micro-structural cracks was enhanced and the degree of propagation also accelerated.

• 대한금속재료학회지
• /
• 제50권11호
• /
• pp.817-822
• /
• 2012

Nano powders of $Al_2O_3$ and $TiO_2$ compounds made by high energy ball milling were pulsed current activated sintered for studying their sintering behaviors and mechanical properties. The advantage of this process is that it allows very quick densification to near theoretical density and inhibition of grain growth. Nano-structured $Al_2TiO_5$ with small amount of $Al_2O_3$ and$TiO_2$ was formed by sintering at $1300^{\circ}C$ for 5 minute, in which average grain size was about 96 nm. Hardness and fracture toughness of the nano-structured $Al_2TiO_5$ compound with a small amount of $Al_2O_3$ and$TiO_2$ were $602kg/mm^2$ and $2.6MPa{\cdot}m^{1/2}$, respectively.

• Journal of Microbiology and Biotechnology
• /
• 제13권1호
• /
• pp.9-14
• /
• 2003

When ginsenosides Rbl, Rb2, and Rc were anaerobically incubated with commercial and human intestinal lactic acid bacteria, most commercial lactic acid bacteria did not metabolize these ginsenosides to compound K. However, lactic acid bacteria, B. minimum KK-1, Bifidobacterium cholerium KK-2, and B. cuniculi K-513, isolated from human intestinal microflora transformed these ginsensosides to compound K. When the bacterial mixtures of commercial lactic acid bacteria were incubated with these ginsenosides, these compounds were not transfformed to compound K. However, when Bzfidobacterium KK-1 and KX-2 were miked, these ginsenosides were synergistically transformed to compound K. When water extract of ginseng was incubated with these mixed bifidobacteria, compound K was potently produced. Therefore, it is suggested that, if ginseng with these mixed bifidobacteria is fermented, compound K-enforced ginseng materials could be produced that show cytotoxicity against tumor cell lines.

• 열처리공학회지
• /
• 제1권1호
• /
• pp.8-12
• /
• 1988

This study has been carried out to evaluate gaseous nitrocarburizing treatment undertaken for pure iron at $570^{\circ}C$ in an atmosphere containing 50% endothermic gas, generated from natural gas, and 50% ammonia. The results obtained from the experiment are as follows ; 1) The microstructure of gaseous nitrocarburized pure iron consists of the compound layer on the surface and the diffusion zone beneath it. The compound layer progresses uniformly into ferrite with a thickness of $20{\mu}$ obtained after treating for 3 hours. 2) Chemical analysis has shown that the compound layer has a C/N ratio of 0.19 and that the average combined interstitial content of the compound layer is about 30 atomic percent, which is close to the lower limit of the ${\varepsilon}$-carbonitride phase field in Fe-C-N phase diagram. 3) X-ray diffraction analysis has revealed that the compound layer consists mainly of the c.p.h. phase, ${\varepsilon}-Fe_3$(C.N) and a small amount of $Fe_4N$ and traces of ferrite are also present in the compound layer. 4) The microhardness of the compound layer is about 600 V.H.N and shows a relatively sharp fall-off at the compound layer/diffusion zome interface. 5) The average actual degree of ammonia dissociation is calculated to be 27% for a gaseous nitrocarburizing treatment carried out at $570^{\circ}C$.

• 한국재료학회지
• /
• 제9권5호
• /
• pp.503-508
• /
• 1999

We have investigated the physical and diffusion barrier property of Ti-Si-N film for Cu metallization. The ternary compound was deposited by using reactive rf magnetron sputtering of a TiSi$_2$target in an Ar/$N_2$gas mixture. Resistivities of the films were in range of 358$\mu$$\Omega$-cm, to 307941$\mu$$\Omega$-cm, and tended to increase with increasing the $N_2$/Ar flow rate ratio. The crystallization of the Ti-Si-N compound started to occur at 100$0^{\circ}C$ with the phases of TiN and Si$_3$N$_4$identified by using XRD(X-ray Diffractometer). The degree of the crystallization was influenced by the $N_2$/Ar flow ratio. The diffusion barrier property of Ti-Si-N film for Cu metallization was determined by AES, XRD and etch pit by secco etching, revealing the failure temperature of 90$0^{\circ}C$ in 43~45at% of nitrogen content. In addition, the very thin compound (10nm) with 43~45at% nitrogen content remained stable up to $700^{\circ}C$. Furthermore, thermal treatment in vacuum at $600^{\circ}C$ improved the barrier property of the Ti-Si-N film deposited at the $N_2$(Ar+$N_2$) ratio of 0.05. The addition of Ti interlayer between Ti-Si-N films caused the drastic decrease of the resistivity with slight degradation of diffusion barrier properties of the compound.