• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2006.10a
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• pp.75-75
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• 2006

• Journal of Ginseng Research
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• v.34 no.4
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• pp.288-295
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• 2010

Ginsenosides are the principal components responsible for the pharmacological and biological activities of ginseng. Ginsenoside Rd was transformed into compound K using cell-free extracts of food microorganisms, with Lactobacillus pentosus DC101 isolated from kimchi (traditional Korean fermented food) used for this conversion. The optimum time for the conversion was about 72 h at a constant pH of 7.0 and an optimum temperature of about $30^{\circ}C$. The transformation products were identified by thin-layer chromatography and high-performance liquid chromatography, and their structures were assigned using nuclear magnetic resonance analysis. Generally, ginsenoside Rd was converted into ginsenoside F2 by 36 h post-reaction. Consequently, over 97% of ginsenoside Rd was decomposed and converted into compound K by 72 h post-reaction. The bioconversion pathway to produce compound K is as follows: ginsenoside Rd$\rightarrow$ginsenoside F2$\rightarrow$compound K.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.36 no.6
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• pp.603-608
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• 2023

Carbon black with high purity and excellent conductivity is used as a conductive filler in the semiconductive compound for EHV (Extra High Voltage) power cables of 345 kV or higher. When carbon black and CNT (carbon nanotube) are applied together as a conductive filler of a semiconductive compound, stable electrical properties of the semiconductive compound can be maintained even though the amount of conductive filler is significantly reduced. In EHV power cables, since the semi-conductive layer is close to the conductor, stable electrical characteristics are required even under high-temperature conditions caused by heat generated from the conductor. In this study, the theoretical principle that a semiconductive compound applied with carbon black and CNT can maintain excellent electrical properties even under high-temperature conditions was studied. Basically, the conductive fillers dispersed in the matrix form an electrical network. The base polymer and the matrix of the composite, expands by heat under high temperature conditions. Because of this, the electrical network connected by the conductive fillers is weakened. In particular, since the conductive filler has high thermal conductivity, the semiconductive compound causes more thermal expansion. Therefore, the effect of CNT as a conductive filler on the thermal conductivity, thermal expansion coefficient, and volume resistivity of the semiconductive compound was studied. From this result, thermal expansion and composition of the electrical network under high temperature conditions are explained.

• Journal of Welding and Joining
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• v.34 no.3
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• pp.17-22
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• 2016

In terms of mechanical and metallurgical characteristics, the effect of tool plunge depths(0.2, 0.5, 0.7, 1.0, 1.5mm) on weldability in dissimilar Al5083-O/DP590 friction spot joint has been clarified. From the results, it is found that the stirred nugget was stably formed at a plunge depth of more than 0.7mm, which is caused by improved stirring action against each other material. With increasing a plunge depth, the thickness of intermetallic compound(IMC) layer in Al5083-O/DP590 joint has a tendency to increase. The tensile shear strength reaches to the maximum failure load of 6.5kN at a plunge depth of 0.7mm due to relatively small decrease in the thickness of Al5083-O sheet and relatively minute thickness of IMC layer, compared with those of other plunge depth conditions.

• 한국신재생에너지학회:학술대회논문집
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• 2007.06a
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• pp.326-329
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• 2007

$CuInS_{2}$ thin films were synthesized by sulpurization of Cu/In Stacked elemental layer deposited onto glass Substrates by vacuum furnace annealing at temperature 200[$^{\circ}C$]. And structural and electrical properties were measured in order to certify optimum conditions for growth of the ternary compound semiconductor $CuInS_{2}$ thin films with non-stoichiometry composition. $CuInS_{2}$ thin film was well made at the heat treatment 200[$^{\circ}C$] of SLG/Cu/ln/S stacked elemental layer which was prepared by thermal evaporator, and chemical composition of the thin film was analyzed nearly as the proportion of 1 : 1 : 2. Physical properties of the thin film were investigated at various fabrication conditions substrate temperature, annealing and temperature, annealing time by XRD, FE-SEM and Hall measurement system. At the same time, carrier concentration, hall mobility and resistivity of the thin films was $9.10568{\times}10^{17}$ [$cm^{-3}$], 312.502 [$cm^{2}/V{\cdot}s$] and $2.36{\times}10^{-2}$ [${\Omega}{\cdot}cm$], respectively.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.4 no.5
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• pp.1151-1156
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• 2000

In this paper, we report a fabrication of InP-based microstructurs for III-V compound semiconductor micromachining. Vertical liquid phase epitaxy(LPE) system was used in order to grow the InP/lnGaAsP/InP layers. The thicknesses of InP top-layer and InGaAsP were $1\mum \;and \;0.4\mum$, respectively. The fabrication of InGaAsP microstructures involves front-side bulk micromachining. The experimental result showed the beams must be carefully aligned in the <100> direction since the etching of the beam in the <100> direction is more faster than that of the beam in the <110> and <110> direction.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2000.05a
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• pp.447-450
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• 2000

In this paper, we report a fabrication of InP-based microstructurs for III-V compound semiconductor micromachining. Vertical liquid phase epitaxy(LPE) system was used in order to grow the Inp/InGaAsP/InP layers. The thicknesses of InP top-layer and InGaAsP were 1$\mu\textrm{m}$ and 0.4$\mu\textrm{m}$ respectively. The fabrication of InGaAsP microstructures involves front side bulk micromachining. The experimental result showed the beams must be carefully aligned in the <110> direction since the lateral etching of the beam in the <110> direction is more faster than that of the beam in the <100> direction.

• 한국정보디스플레이학회:학술대회논문집
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• 2005.07b
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• pp.1306-1309
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• 2005

Highly efficient and bright organic light-emitting diodes (OLEDs) have been realized using the thin alkali compound films (TACFs) at the interface between an emitting layer and an electron transporting layer with conventional organic layers. By comparing the performance of the device as a function of position with the TACFs, we propose the optimal position of the TACFs in the tris-(8-hydroxyquinoline) aluminum (Alq3). A device with the ACFs showed high luminance of over 12 500 cd/m2, luminance efficiency of more than 12 cd/A, and power efficiency of more 4.5 lm/W, respectively.

• Korean Journal of Pharmacognosy
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• v.29 no.3
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• pp.209-216
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• 1998

In the course of phytochemical studies of Rumex acetosella L. (Polygonaceae), the MeOH extract of the whole plants was fractionated with $CH_2Cl_2$ and $H_2O$, and the $CH_2Cl_2$ layer was fractionated again with 90% MeOH and hexane. Whereas $H_2O$ layer was fractionated with EtOAc and then with n-BuOH again. By repeated column chromatography, compound 1 was isolated from the 90% MeOH fraction, compounds 1, 2, 3, 4 and 5 were from the ethylacetate fraction, and compound 5 was from the n--BuOH fraction. On the basis of physico-chemical, spectroscopic evidences and in comparison with authentic samples, the structures of them were confirmed to emodin, citreorosein, $chrysophanol-8-O-{\beta}-D-glucopyranoside$, luteolin and $luteolin-7-O {\beta}-D-glucopyranoside$.

• Journal of the Korean institute of surface engineering
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• v.39 no.6
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• pp.268-275
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• 2006

In this study, effect of sputtering on the plasma-nitriding substrate and before PVD coating on the microstucture, microhardness, surface roughness and the adhesion strength of CrZrN thin films were investigated. Experimental results showed that this sputtering process not only removed surface compound layer which formed during a plasma nitriding process but also induced an alteration of the surface of plasma nitrided substrate in terms of microhardness distribution, surface roughness. This in turn affected the adhesion strength of PVD coatings. After sputtering, microhardness distribution showed general decrease and the surface roughness became increased slightly. The critical shear stress measured from the scratch test on the CrZrN coatings showed an approximately 1.4 times increase in the adhesion strength through the sputtering prior to the coating and this could be attributed to a complete removal of compound layer from the plasma nitrided surface and to an increase in the surface roughness after sputtering.