• Title/Summary/Keyword: composite-titanium silicide

Search Result 5, Processing Time 0.019 seconds

The Study of Formation of Ti-silicide deposited with Composite Target [II] (Composite Target으로 증착된 Ti-silicide의 현성에 관한 연구[II])

  • Choi, Jin-Seog;Paek, Su-Hyon;Song, Young-Sik;Sim, Tae-Un;Lee, Jong-Gil
    • Korean Journal of Materials Research
    • /
    • v.1 no.4
    • /
    • pp.191-197
    • /
    • 1991
  • The surface roughnesses of titanium silicide films and the diffusion behaviours of dopants in single crystal and polycrystalline silicon substrates durng titanium silicide formation by rapid thermal annealing(RTA) of sputter deposited Ti-filicide film from the composite $TiSi_{2.6}$ target were investigated by the secondary ion mass spectrometry(SIMS), a four-point probe, X-ray diffraction, and surface roughness measurements. The as-deposited films were amorphous but film prepared on single silicon substrate crystallized to the orthorhombic $TiSi_2$(C54 structure) upon rapid thermal annealing(RTA) at $800^{\circ}C$ for 20sec. There was no significant out-diffusion of dopants from both single crystal and polycrystalline silicon substrate into titanum silicide layers during annealing. Most of the implanted dopants piled up near the titanium silicide/silicon interface. The surface roughnesses of titanium silicide films were in the range between 16 and 22nm.

  • PDF

Void Defects in Composite Titanium Disilicide Process (복합 티타늄실리사이드 공정에서 발생한 공극 생성 연구)

  • Cheong, Seong-Hwee;Song, Oh-Sung
    • Korean Journal of Materials Research
    • /
    • v.12 no.11
    • /
    • pp.883-888
    • /
    • 2002
  • We investigated the void formation in composite-titanium silicide($TiSi_2$) process. We varied the process conditions of polycrystalline/amorphous silicon substrate, composite $TiSi_2$ deposition temperature, and silicidation annealing temperature. We report that the main reason for void formation is the mass transport flux discrepancy of amorphous silicon substrate and titanium in composite layer. Sheet resistance in composite $TiSi_2$ without patterns is mainly affected by silicidation rapid thermal annealing (RTA) temperature. In addition, sheet resistance does not depend on the void defect density. Sheet resistance with sub-0.5 $\mu\textrm{m}$ patterns increase abnormally above $850^{\circ}C$ due to agglomeration. Our results imply that $sub-750^{\circ}C$ annealing is appropriate for sub 0.5 $\mu\textrm{m}$ composite X$sub-750_2$ process.

Property of Composite Titanium Silicides on Amorphous and Crystalline Silicon Substrates (아몰퍼스실리콘의 결정화에 따른 복합티타늄실리사이드의 물성변화)

  • Song Oh-Sung;Kim Sang-Yeob
    • Journal of the Microelectronics and Packaging Society
    • /
    • v.13 no.1 s.38
    • /
    • pp.1-5
    • /
    • 2006
  • We prepared 80 nm-thick TiSix on each 70 nm-thick amorphous silicon and polysilicon substrate using an RF sputtering with $TiSi_2$ target. TiSix composite silicide layers were stabilized by rapid thermal annealing(RTA) of $800^{\circ}C$ for 20 seconds. Line width of $0.5{\mu}m$ patterns were embodied by photolithography and dry etching process, then each additional annealing process at $750^{\circ}C\;and\;850^{\circ}C$ for 3 hours was executed. We investigated the change of sheet resistance with a four-point probe, and cross sectional microstructure with a field emission scanning electron microscope(FE-SEM) and transmission electron microscope(TEM), respectively. We observe an abrupt change of resistivity and voids at the silicide surface due to interdiffusion of silicide and composite titanium silicide in the amorphous substrates with additional $850^{\circ}C$ annealing. Our result implies that the electrical resistance of composite titanium silicide may be tunned by employing appropriate substrates and annealing condition.

  • PDF

SIMS analysis of the behavior of boron implanted into single silicon during the Ti-silicide formation (Ti-silicide 박막 형성시 규소 기판에 이온 주입된 붕소 거동에 대한 SIMS 분석)

  • Hwang, Yoo Sang;Paek, Su Hyon;Cho, Hyun Choon;Mah, Jae Pyung;Choi, Jin Seog;Kang, Sung Gun
    • Analytical Science and Technology
    • /
    • v.5 no.2
    • /
    • pp.199-202
    • /
    • 1992
  • Ti-silicide was formed by using metal-Ti target and composite target on the silicon substrate that $BF_2$ were introduced into. Implant energies of $BF_2$ were 50keV and 90keV. The behavior of boron was investigated by SIMS. The redistribution of boron occurred during the formation of Ti-silicide by metal-Ti target and the sample implanted at the energy of 50keV showed severe out-diffusion. In the case that Ti-silicide was formed by composite target, there was little redistribution of boron.

  • PDF

A Study of Titanium and Cobalt Silicide (Titanium과 Cobalt silicide의 연구)

  • Kim, Sang-Yong;Yu, Seok-Bin;Seo, Yong-Jin;Kim, Tae-Hyung;Kim, Chang-Il;Chang, Eui-Goo
    • Proceedings of the KIEE Conference
    • /
    • 1989.11a
    • /
    • pp.122-126
    • /
    • 1989
  • A composite polycide struoture consisting of refractory metal and noble metal silicide film on top of polysilicon bas been considered as a replacement for polysilicon as a gate electrode and Interconnect line in MOSFET integrated circuits. In this paper presents divice characteristics of NOS with $TiSi_2/n^+$polyoide and $CoSi_2/n^+$polycide gate. Also, evaporated Ti,Co films on polysilicon has been annealed by RTA and furnace annealing in $N_2$ abient at temperature of $400^{\circ}C-1000^{\circ}C$. The Ti-,Co-silioide formation is characterized by 4-point probe, silicide growth rate and Its reproductivity bas been examined by SEM.

  • PDF