• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.30 no.10
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• pp.625-630
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• 2017

ZnS was chemically deposited as a buffer layer alternative to CdS, for use as a Cd-free buffer layer in $Cu(In_{1-x}Ga_x)Se_2$ (CIGS) solar cells. The deposition of a thin film of ZnS was carried out by chemical bath deposition, following which the structural and optical properties of the ZnS layer were studied. For the experiments, zinc sulfate hepta-hydrate ($ZnSO_4{\cdot}7H_2O$), thiourea ($SC(NH_2)_2$), and ammonia ($NH_4OH$) were used as the reacting agents. The mole concentrations of $ZnSO_4$ and $SC(NH_2)_2$ were fixed at 0.03 M and 0.8 M, respectively, while that of ammonia, which acts as a complexing agent, was varied from 0.3 M to 3.5 M. By varying the mole concentration of ammonia, optimal values for parameters like optical transmission, deposition rate, and surface morphology were determined. For the fixed mole concentrations of $0.03M\;ZnSO_4{\cdot}7H_2O$ and $0.8M\;SC(NH_2)_2$, it was established that 3.0 M of ammonia could provide optimal values of the deposition rate (5.5 nm/min), average optical transmittance (81%), and energy band gap (3.81 eV), rendering the chemically deposited ZnS suitable for use as a Cd-free buffer layer in CIGS solar cells.

• Journal of the Korean institute of surface engineering
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• v.18 no.4
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• pp.153-163
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• 1985

In the electroless nickel plating bath which contained nickel sulfate, sodium hypophosphite, boric acid and triethanolamine, effect of their concentration on the rate of deposition was tested by gravimetric method and polarization method. The polarization method that polarize small range of voltage anodicaly and cathodicaly at the mixed potential in the electroless plating bath can calculate mixed current (depositing rate) from $i_{mp}=\frac {i}{\eta}\;\frac{RT}{nF}\;or\;i_{mp}=\frac{i}{\eta}\;\frac{1}{2.3}(\frac{b_a\;\;b_c}{b_c+b_a})$ Where $i_{mp}$ is the depositing current, i is the polarized current, ${\eta}$ is the polarized voltage, $b_a\;and\;b_c$ are the Tafel slop of anodic and cathodic polarization curves respectively. The calculated mixed current ($i_{mp}$) is proportional to the depositing rate obtained by gravimetric method and corresponded mostly to the real depositing rate by multifying supplementary constant. The polarization method can be used for founding inclination of reaction on various concentration of each composition. Decreasing or increasing concentration of triethanolaminc as a complexing agent , the depositing rate is decreased and when the bath contained 25-50mL/L of triethanoloamine, the depositing rate is increased. The depositing rate is increased with increasing the concentration of boric acid, and when the bath contained 0.5M of boric acid, the depositing rate is increased abruptly. The optimum composition of the electroless nickel bath was estimated 0.1M of nickel sulfate, 0.25M of sodium hypophosphite, 0.5M of boric acid, and 25-50mL/L of triethanalamine.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2006.06a
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• pp.565-566
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• 2006

Slurry used in metal chemical mechanical polishing normally consists of an oxidizer, a complexing agent, a corrosion inhibitor and an abrasive. This paper investigates effects of citric acid as a complexing agent for Cu CMP with $H_2O_2$ as an oxidizer. In order to study chemical effects of a citric acid, x-ray photoelectron spectroscopy were performed on Cu sample after Cu etching test. XPS results reveal that CuO, $Cu(OH)_2$ layer decrease but Cu/$Cu_2O$ layer increase on Cu sample surface. To investigate nanomechanical properties of Cu sample surface, nanoindentation was performed on Cu sample. Results of nanoindentation indicate wear resistance of Cu Surface decrease. According to decrease of wear resistance on Cu surface, removal rate increases from $285\;{\AA}/min$ to $8645\;{\AA}/min$ in Cu CMP.

• Journal of the Korean institute of surface engineering
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• v.29 no.6
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• pp.709-713
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• 1996

Mechanical solderless chip packaging with small gold bumps or metal balls has increased in the electronic devices. The preparation of conductive particles (5~7 $\mu\textrm{m}$ diamiter) by electroless nickel plating have been investigated. Generally, batch type electroless plating is applied to provide conductivity on the nonconductors. Since the surface areas of particles are much larger than the bulk substrate, accordingly the electroless plating bath becomes unstable. Thus, we applied the continuous dropping method for the preparation of conductive particles. The uniform coverage of deposited nickel on the particles was obtained by using ammonium acetate as a complexing agent, and surface coverage is further improved without coagulation of particles by the surface active agent treatment before enter the plating bath.

• Proceedings of the Korean Institute of Surface Engineering Conference
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• 2014.11a
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• pp.123-123
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• 2014

본 연구는 환경 및 인체에 유해한 포르말린을 사용하지 않은 동 도금액 개발에 관한 것이다. 본 연구에서는 여러 착화제 및 환원제를 혼합하여 각각의 환원제 및 착화제가 동 도금액의 안정성에 미치는 영향을 관찰하고자 하였다. 연구결과 환원제로 두 가지 성분 이상의 환원제가 혼합될 경우 동 도금액의 구동에 용이한 것을 확인할 수 있었으며 착화제의 경우 일반적으로 무전해 동 도금액에서 사용되는 착화제에 제 2의 착화제가 포함될 경우 도금액의 안정성을 향상시킴을 확인할 수 있었다.

• Journal of the Korean institute of surface engineering
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• v.55 no.5
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• pp.299-307
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• 2022

Gold plating is used as a coating of connector in printed circuit boards, ceramic integrated circuit packages, semiconductor devices and so on, because the film has excellent electric conductivity, solderability and chemical properties such as durability to acid and other chemicals. In most cases, internal connection between device and package and external terminals for connecting packaging and printed circuit board are electroless Ni-P plating followed by immersion Au plating (ENIG) to ensure connection reliability. The deposition behavior and film properties of electroless Au plating are affected by P content, grain size and mixed impurity components in the electroless Ni-P alloy film used as the underlayer plating. In this study, the correlation between electroless nickel plating used as a underlayer layer and cyanide-free electroless Au plating using thiomalic acid as a complexing agent and aminoethanethiol as a reducing agent was investigated.

• Journal of the Korean institute of surface engineering
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• v.55 no.4
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• pp.202-214
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• 2022

Internal connections between device, package and external terminals for connecting packaging and printed circuit board are normally manufactured by electroless Ni-P plating followed by immersion Au plating (ENIG process) to ensure the connection reliability. In this study, a new non-cyanide-based immersion and electroless Au plating solutions using thiomalic acid as a complexing agent and aminoethanethiol as a reducing agent was investigated on different underlayer electroless Ni-P plating layers. As a result, it was confirmed that the deposition behavior and film properties of electroless Au plating are affected by grain size and impurity of the electroless Ni-P film, which is used as the plating underlayer. Au plating on the electroless Ni-P plating film with a dense surface structure showed the highest bonding strength. In addition, the electroless Au plating film on the Ni-P plating film has a smaller particle size exhibited higher bonding strength than that on the large particle size.

• Bulletin of the Korean Chemical Society
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• v.25 no.8
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• pp.1137-1142
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• 2004

A spectrophotometric and first derivative spectrophotometric method was developed in aquatic Tween 80 micellar solutions for selective determination of nickel without using any pre-separation step. 1-(2-Pyridylazo)-2-naphthol (PAN), as a sensitive chromogenic complexing agent formed a red-colored Ni(II)-PAN complex in Tween 80 media with satisfactory solubility and stability. Conditions such as pH, PAN concentration, type and concentration of micellizing agent were optimized. Molar absorptivity of Ni-PAN complex was found $4.62\;{\times}\;10^4L\;cm^{?1}\;mol^{?1}$ at 569 nm, under the optimum condition. Calibration graphs were derived by zero, first and second derivative spectrophotometry at maximum wavelengths of 569, 578 and 571 nm with linear ranges of 30-1800, 20-2500 and 30-2000 ng $mL^{?1}$ , respectively. Precision as standard deviation as well as accuracy as recovery percent were in the range of 1-20 ng $mL^{?1}$, and 93.3-103.3%, respectively, for the entire of the linear ranges. Spectrophotometric detection limit was 3 ng $mL^{?1}$ and effects of diverse ions on the first derivative determination of nickel were studied to investigate selectivity of the method. Interferences of cobalt and copper on the nickel determination were prevented using o-phenanthroline as masking agent. The recommended procedures were applied to the various synthetic and stainless steel alloys, tea leaves and human hair, with satisfactory results.

• Journal of the Korean institute of surface engineering
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• v.50 no.3
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• pp.177-182
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• 2017

The properties of electroless Ni-B thin film on diamond powder with different parameters (temperature, pH, surfactant etc.) were studied. The surface morphology, structure and composition distribution of the Ni-B film were observed by field effect scanning electron microscope (FE-SEM), energy-dispersive spectrometer (EDS), X-ray diffraction (XRD) and Auger electron spectroscopy (AES). The growth rate of Ni-B film was increased with increase of bath temperature. The B content in Ni-B film was reduced with increase of bath pH. As a result the structure of Ni-B film was changed from amorphous to crystalline structure. The PVP in solution plays multi-functional roles as a dispersant and a stabilizer. The Ni-B film deposited with adding 0.1 mM-PVP was strongly introduced an amorphous structure with higher B content (25 at.%). Also the crystallite size of Ni-B film was reduced from 12.7 nm to 5.4 nm.

• Journal of Power System Engineering
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• v.8 no.3
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• pp.36-43
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• 2004

The effect of bath composition, plating condition and plating rate on the magnetic property of electroless Co-Cu-P deposits were investigated. With increasing $CuCl_2$ concentration in the bath, plating rate increased, while the Br value of deposit decreased sharply. Deposited surface were inferiority by the increase pH above 10.5, bath temperature higher than $80^{\circ}C$. Plating reaction had been ceased by the increase of pH above 11, bath temperature higher than $90^{\circ}C$ and under $40^{\circ}C$. The Br value of deposit was uniform with various concentration of complexing agent(sodium citrate) in the bath. The Br value of deposit was almost equal to that found by the addition of stabilizer (thiourea) and accelerator(NaF). The Br value of deposit was uniform in plating time(20min) and heat treatment temperature(below $200^{\circ}C$), and were confirmed to have adequate bath stability for practical use.