• Title/Summary/Keyword: co-sputtering

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Mechanical evaluation of superhard Ti-Si-C-N coatings prepared by a hybrid coating system (하이브리드 코팅 시스템으로 제조된 초고경도 Ti-Si-C-N 코팅막의 기계적 특성 평가)

  • Kang S. H.;Kang M. C.;Kim K. H.
    • Proceedings of the Korean Society for Technology of Plasticity Conference
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    • 2005.10a
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    • pp.178-181
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    • 2005
  • Quaternary Ti-Si-C-N coatings were deposited on WC-Co substrates by a hybrid coating system of arc ion plating (AIP) and sputtering techniques using Ti and Si targets, in an $Ar/N_2/CH_4$ gaseous mixture. The crystallinity, bending status, and microstructure of the Ti-Si-C-N coatings were measured by X-ray diffractometer (XRD) and X-ray photoelectron spectroscope (XPS), The micro-hardness of Ti(C,N) and Ti-Si-N coatings were about 30 and 40 GPa, respectively. As the Si was incorporated into Ti(C,N) coatings, the Ti-Si-C-N coatings having Si content of $8.9\;at.\%$ showed the maximum hardness value of about 55 GPa. In this work, the microstructure and mechanical properties of Ti-Si-C-N coatings were systematically investigated.

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Effect of Metallic Tungsten Concentration on Resistance Switching Behavior of Sputtered W-doped NbOx Films

  • Lee, Gyu-Min;Kim, Jong-Gi;Na, Hui-Do;Son, Hyeon-Cheol
    • Proceedings of the Korean Vacuum Society Conference
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    • 2012.02a
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    • pp.288-288
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    • 2012
  • In this study, we investigated that the resistance switching characteristics of W-doped NbOx films with increasing W doping concentration. The W-doped NbOx based ReRAM devices with a TiN/W-doped NbOx/Pt/Ti/SiO2 were fabricated on Si substrates. The 50 nm thick W-doped NbOx films were deposited by reactive dc magnetron co-sputtering at $400^{\circ}C$ and oxygen partial pressure of 35%. Micro-structure of W-doped NbOx films and atomic concentration were investigated by XRD, TEM and XPS, respectively. The W-doped NbOx films showed set/reset resistance switching behavior at various W doping concentrations. The process voltage of set/reset is decreased and whereas the initial current level is increased with increasing W doping concentration in NbOx films. The change of resistance switching behavior depending on doping concentration was discussed in terms of concentration of metallic tungsten of oxygen of W-doped NbOx.

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Fabrication of a 17inch Area Size Nano-Wire Grid using Roll-to-Roll UV Nano-Imprinting Lithography (Roll-to-Roll UV 나노 임프린팅 리소그래피에 의한 대면적 17인치의 나노 와이어 그리드의 제작)

  • Huh, Jong-Wook;Nam, Su-Yong
    • Journal of the Korean Graphic Arts Communication Society
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    • v.29 no.3
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    • pp.17-30
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    • 2011
  • The polarizer is an important optical element used in a variety of applications. Nano-wire grid polarizers in the form of sub-wavelength metallic gratings are an attractive alternative to conventional polarizers, because they provide high extinction ratio. This study has been carried out to fabrication of the 17inch area size nano-wire grid polarizer(NWGP) The master for NWGPs with a pitch of 200nm and the area size $730mm{\times}450mm$ were fabricated using laser interference lithography and aluminum sputtering and wet etching. And The NWGP fabrication process was using by the Roll to-Roll UV imprinting and was applied to flexible PET film. The results were a transmission of light (Tp) 46.7%, reflectance (Rs) 40.1% and Extinction ratio of above 16 for the visible light range.

Thermoelectric and electrical properties of In-Sn-Zn-O thin films deposited by magnetron co-sputtering (이원 동시 마그네트론 스퍼터링법을 이용하여 증착한 In-Sn-Zn-O 박막의 열전 특성)

  • Byeon, Ja-Yeong;Song, Pung-Geun
    • Proceedings of the Korean Institute of Surface Engineering Conference
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    • 2015.11a
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    • pp.297-298
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    • 2015
  • 우수한 열전 성능의 소자가 되기 위해서는 높은 전기 전도도 및 제백상수 그리고 낮은 열 전도도를 가져야한다. 본 연구에서는 DC 마그네트론 스퍼터링 법을 이용하여 비정질 구조를 갖는 ITZO 박막을 제작하였으며, 전기적 특성과 열전 특성을 조사하였다. 그 결과 ITO에 ZnO 첨가시 전기적 특성 및 열전 특성이 향상 되었다. 또한 비정질 구조를 가지므로 격자에 의한 열 전도도가 낮아 전체 열 전도도가 낮을 것이며 이는 높은 열전 성능 지수(ZT)를 가질 것이라 예상된다.

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다공성 SnO2 가스 센서의 촉매 효과

  • Park, Ji-Won;Han, Min-A;Kim, Hyeon-Jong;Lee, Ho-Nyeon;Hyeon, Seung-Gyun
    • Proceedings of the Korean Institute of Surface Engineering Conference
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    • 2018.06a
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    • pp.84.2-84.2
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    • 2018
  • 최근 사람의 후각으로는 감지하기 어려운 유해, 폭발성 가스로 인한 안전사고 발생이 많아짐에 따라 높은 감도를 지닌 가스 센서의 필요성이 커지고 있다. 특히 가스 검지층으로 감도 및 안정성이 뛰어난 $SnO_2$를 이용한 가스 센서 연구와 더불어 촉매 효과에 대한 연구도 활발히 진행 중이다. 본 연구에서는 물리기상증착 공정의 증착압력 등 조건들을 변화시켜 형성한 다공성 나노 구조의 $SnO_2$ 가스 검지층 위에 촉매물질을 Sputtering 방식을 이용하여 증착하였다. SEM 분석을 통해 $SnO_2$ 검지층 내 촉매물질의 분포를 확인하였다. IDT 전극 기판 위에 먼저 나노 구조의 $SnO_2$ 가스 검지층을 형성하였고 그 후에 촉매물질을 증착하였다. 제작된 샘플은 $700^{\circ}C$에서 1시간동안 튜브 퍼니스로 열처리를 진행한 뒤 챔버 내에서 측정을 진행하였다. 측정은 $300^{\circ}C$에서 CO 농도, 습도를 변화시키며 감도, 반응시간, 회복시간에 대하여 분석하였다.

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Characteristics of Oxidizing Gas for BSCCO Thin Film Fabrication (BSCCO 박막 제작을 위한 산화가스의 특성)

  • Lim, Jung-Kwan;Park, Yong-Pil;Jang, Kyung-Uk;Lee, Hee-Kab
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2005.05b
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    • pp.110-113
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    • 2005
  • Ozone is useful oxidizing gas for the fabrication of BSCCO thin films. In order to obtain high quality oxide BSCCO thin films, higher ozone concentration is necessary. The growth rates of the films was set in the region from 0.17 to 0.27 nm/min. MgO(100) was used as a substrate. In this paper oxidation property was evaluated relation between oxide gas pressure and inverse temperature(CuO reaction). The obtained condition was formulated by the fabrication of Cu metal thin film by co-deposition using the Ion Beam Sputtering method. Because the CuO phase peak appeared at the XRD evaluation of the CuO thin film using ozone gas, this study has succeeded in the fabrication of the CuO phase at $825^{\circ}C$.

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Quantum Confimement Effect in $SiO_2$ Thin Films Embedded with Semiconductor Microcrystallites

  • Wu-Xuemei;Chen-Jing;Ahuge-Lanjian
    • Journal of the Korean Vacuum Society
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    • v.7 no.s1
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    • pp.25-29
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    • 1998
  • $SiO_2$ thin films embedded with Ge microcrystallites (Ge-$SiO_2$) were prepared by use of r.f. co-sputtering technique from a Ge, $SiO_2$ composite target. The size of Ge crystallites can been modulated by the experiment parameters. The optical absorption and non-linear optical properties of Ge-$SiO_2$ films were measured. The blue shift of the optical absorption edge, the saturated absorption and two-photon absorption under the condition of resonant absorption have been observed, and are discussed according to the quantum confinement effect.

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Investigation on Preparation of Ge Quantum Dots in $SiO_2$ Thin Films

  • Chen, Jing;Wu, Xuemei;Jin, Zongming;Yao, Weiguo
    • Journal of the Korean Vacuum Society
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    • v.7 no.s1
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    • pp.197-201
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    • 1998
  • Ge quantum dots in $SiO_2$ thin films were prepared by r.f. magnetron co-sputtering using a Ge, $SiO_2$ composite target. The size of quantum dots was modulated by controlling of substrate temperature during depositing and annealing of samples deposited at certain substrate temperature. A series of work was done on the influence of preparing parameters on the growth of quantum dots, and a discussion on the formation and growth of quantum dots under different preparation parameters is given.

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Carbon Nanotube Passivation layer for Increasing the Solar Water Splitting Performance of CdS/CuInGaSe Photocathode

  • Bae, Hyojung;Ko, Young-Hee;Park, Jun-Beom;Ko, Hang-Ju;Ryu, Sang-Wan;Ha, Jun-Seok
    • Journal of the Microelectronics and Packaging Society
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    • v.26 no.4
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    • pp.107-111
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    • 2019
  • We report the fabrication of a CdS/CuInGaSe (CdS/CIGS) structure with carbon nanotubes and its application as a photocathode for photoelectrochemical water splitting. CIGS thin films were fabricated using co-evaporation by RF magnetron sputtering, while CdS was fabricated by chemical bath deposition. Spray coated multi-wall carbon nanotube (CNT) film on CdS/CIGS thin film was investigated as a photocathode. The CNT-coated CdS/CIGS showed superior photocurrent density and exhibited improved photostability.

Characteristics of AZO-NiO thin films for p-type GaN semiconductor in GaN LED TCEs by using magnetron co-sputtering methode (GaN LED의 p형 반도체 투명 접촉 전극용 마그네트론 2원 동시 방전법을 통해 증착한 NiO-AZO 박막의 특성 평가)

  • Park, Hui-U;Bang, Jun-Ho;Hui, K.N.;Song, Pung-Geun
    • Proceedings of the Korean Institute of Surface Engineering Conference
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    • 2011.05a
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    • pp.180-181
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    • 2011
  • 기존의 GaN LED에 사용되어지고 있는 p형 GaN 반도체의 Ni/Au 투명 접촉 전극을 제조할 때 발생하는 오염과 공정을 줄이고 발광효율을 향상시킬 수 있는 투명 접촉 전극을 제작하기 위해 마그네트론 2원 동시 방전법을 사용하여 AZO-NiO 박막을 증착 하였다. Al 원자 함량에 따른 AZO-NiO 박막의 구조적, 전기적, 광학적 특성을 조사하였다.

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