Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference (한국전기전자재료학회:학술대회논문집)
- 2005.05b
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- Pages.110-113
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- 2005
Characteristics of Oxidizing Gas for BSCCO Thin Film Fabrication
BSCCO 박막 제작을 위한 산화가스의 특성
- Lim, Jung-Kwan (Dongshin Uni.) ;
- Park, Yong-Pil (Dongshin Uni.) ;
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Jang, Kyung-Uk
(Kyungwon Coll.) ;
- Lee, Hee-Kab (KCCI)
- Published : 2005.05.27
Abstract
Ozone is useful oxidizing gas for the fabrication of BSCCO thin films. In order to obtain high quality oxide BSCCO thin films, higher ozone concentration is necessary. The growth rates of the films was set in the region from 0.17 to 0.27 nm/min. MgO(100) was used as a substrate. In this paper oxidation property was evaluated relation between oxide gas pressure and inverse temperature(CuO reaction). The obtained condition was formulated by the fabrication of Cu metal thin film by co-deposition using the Ion Beam Sputtering method. Because the CuO phase peak appeared at the XRD evaluation of the CuO thin film using ozone gas, this study has succeeded in the fabrication of the CuO phase at