• 한국정보디스플레이학회:학술대회논문집
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• 2005.07a
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• pp.303-306
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• 2005

We report the self-aligned low temperature poly silicon (LTPS) TFT process using simple doping process. In conventional LTPS-TFT, the Lightly Doped Drain (LDD) doping and source/drain doping are processed separately by aligning the gate with the source and drain during the gate lithography step. This ne w process not only fabricates fully self-aligned low temperature poly silicon TFTs with symmetric LDD structure but also simplifies the process flow with combined source/drain doping and LDD doping in one step. LDD doping process can be achieved using only source/drain doping process according to the new structure. In this paper, the TFT characteristics of NMOS and PMOS using the new doping process will be discussed.

• Applied Chemistry for Engineering
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• v.28 no.5
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• pp.565-570
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• 2017

Tobacco smoke emitted during smoking is divided into a main-stream and side-stream smoke. Most of the tobacco smoke that spreads to a room while smoking is a side-stream one. The side-stream tobacco smoke is two to three times more harmful than that of the main-stream tobacco smoke. In this study, the removal efficiency of CO, $H_2S$, $NH_3$ and HCHO in a side-stream tobacco smoke using the doping component of $TiO_2$ photocatalysts was confirmed. As a result, CO was removed up to 78.37%, which indicated that the $TiO_2$ photocatalytic process is effective for CO removal. Also, the removal efficiencies of CO, $H_2S$ and HCHO were greatly affected by the amount of doped O and Si components of the $TiO_2$ photocatalyst. In conclusion, the more doped O and Si components had, the higher removal efficiencies of harmful substances were achieved.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2006.04a
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• pp.81-82
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• 2006

Doping is a well-known method for improving electroluminescent (EL) efficiency of organic light emitting diodes. In our study, doping with 2 materials simultaneously, we could achieve improved EL efficiency. The emission layer was tris-(8-hydroxyquinoline)aluminum, and the 2 dopants were N,N'-dimethyl-quinacridone (DMQA) and 10-(2-Benzothiazolyl)-2, 3, 6, 7-tetrahydro-1,1,7,7,-tetramethyl 1-1H, 5H, 11H-[1] benzopyrano [6,7,8-ij]quinolizin-11-one (C-545T). The EL intensity of co-doped device was nearly flat, it shows that co-doping technique could be a effective way to improve the EL efficiency. EL efficiency of Single-doped device based on DMQA and C-S45T were ~6.47Cd/A and ~7.45Cd/A, respectively. Co-doped device showed higher EL efficiency of ~8.30Cd/A.

• Proceedings of the Korean Vacuum Society Conference
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• 2016.02a
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• pp.292-292
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• 2016

Transition metal dichalcogenides (TMDs) with a two-dimensional layered structure have been considered highly promising materials for next-generation flexible, wearable, stretchable and transparent devices due to their unique physical, electrical and optical properties. Recent studies on TMD devices have focused on developing a suitable doping technique because precise control of the threshold voltage ($V_{TH}$) and the number of tightly-bound trions are required to achieve high performance electronic and optoelectronic devices, respectively. In particular, it is critical to develop an ultra-low level doping technique for the proper design and optimization of TMD-based devices because high level doping (about $10^{12}cm^{-2}$) causes TMD to act as a near-metallic layer. However, it is difficult to apply an ion implantation technique to TMD materials due to crystal damage that occurs during the implantation process. Although safe doping techniques have recently been developed, most of the previous TMD doping techniques presented very high doping levels of ${\sim}10^{12}cm^{-2}$. Recently, low-level n- and p-doping of TMD materials was achieved using cesium carbonate ($Cs_2CO_3$), octadecyltrichlorosilane (OTS), and M-DNA, but further studies are needed to reduce the doping level down to an intrinsic level. Here, we propose a novel DNA-based doping method on $MoS_2$ and $WSe_2$ films, which enables ultra-low n- and p-doping control and allows for proper adjustments in device performance. This is achieved by selecting and/or combining different types of divalent metal and trivalent lanthanide (Ln) ions on DNA nanostructures. The available n-doping range (${\Delta}n$) on the $MoS_2$ by Ln-DNA (DNA functionalized by trivalent Ln ions) is between $6{\times}10^9cm^{-2}$ and $2.6{\times}10^{10}cm^{-2}$, which is even lower than that provided by pristine DNA (${\sim}6.4{\times}10^{10}cm^{-2}$). The p-doping change (${\Delta}p$) on $WSe_2$ by Ln-DNA is adjusted between $-1.0{\times}10^{10}cm^{-2}$ and $-2.4{\times}10^{10}cm^{-2}$. In the case of Co-DNA (DNA functionalized by both divalent metal and trivalent Ln ions) doping where $Eu^{3+}$ or $Gd^{3+}$ ions were incorporated, a light p-doping phenomenon is observed on $MoS_2$ and $WSe_2$ (respectively, negative ${\Delta}n$ below $-9{\times}10^9cm^{-2}$ and positive ${\Delta}p$ above $1.4{\times}10^{10}cm^{-2}$) because the added $Cu^{2+}$ ions probably reduce the strength of negative charges in Ln-DNA. However, a light n-doping phenomenon (positive ${\Delta}n$ above $10^{10}cm^{-2}$ and negative ${\Delta}p$ below $-1.1{\times}10^{10}cm^{-2}$) occurs in the TMD devices doped by Co-DNA with $Tb^{3+}$ or $Er^{3+}$ ions. A significant (factor of ~5) increase in field-effect mobility is also observed on the $MoS_2$ and $WSe_2$ devices, which are, respectively, doped by $Tb^{3+}$-based Co-DNA (n-doping) and $Gd^{3+}$-based Co-DNA (p-doping), due to the reduction of effective electron and hole barrier heights after the doping. In terms of optoelectronic device performance (photoresponsivity and detectivity), the $Tb^{3+}$ or $Er^{3+}$-Co-DNA (n-doping) and the $Eu^{3+}$ or $Gd^{3+}$-Co-DNA (p-doping) improve the $MoS_2$ and $WSe_2$ photodetectors, respectively.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.23 no.12
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• pp.949-955
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• 2010

Nd and Ti co-doped bismuth ferrite $(Bi_{1-x}Nd_x)(Fe_{1-y}Ti_y)O_3$ (x, y = 0, 0.05, 0.1, 0.2) ceramics and thin films were synthesized through the conventional mixed-oxide process and pulsed laser deposition (PLD), respectively. Nd and Ti co-doping effect was examined with emphasis on how these impurities affect phase formation behavior as there could be the improvement in leakage current problems often associated with multiferroic $BiFeO_3$ (BFO) thin films. The lattice constants of BFO ceramics decreased with Nd doping concentration up to 10mol%, while they further decreased with Nd and Ti co-doping to about 20%. BFO thin films obtained by the PLD process revealed random polycrystalline structure. Similar to bulk BFO ceramic, Nd and Ti co-doping effectively suppressed the formation of unwanted secondary phase and thus stabilized the perovskite phase in BFO thin films.

• Proceedings of the Materials Research Society of Korea Conference
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• 2001.11a
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• pp.180-180
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• 2001

• Progress in Superconductivity and Cryogenics
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• v.20 no.1
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• pp.28-31
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• 2018

Phase diagrams of electron- and hole-doped $Sr_2VO_3FeAs$ are investigated using Co and Mn substitution at Fe site. Metallic nature survives only for Co (electron) doping, not for Mn (hole) doping. The conductivity of $Sr_2VO_3(Fe,M)As$ (M=Mn,Co) is sensitive to the structural modification of FeAs microstructure rather than carrier doping. This finding implies that the FeAs layer plays a dominant role on the charge conduction, thus the $SrVO_3$ layers should be considered as an insulating block. Also, we found that the superconductivity is rapidly suppressed by both dopants. This result is different from the conventional behavior that superconductivity is induced by doping in the most of Fe pnictides. Our finding strongly supports the uniqueness of $Sr_2VO_3FeAs$ among the Fe pnictide superconductors.

• Journal of Electrochemical Science and Technology
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• v.8 no.4
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• pp.338-343
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• 2017

Activated carbon has lower electrical conductivity and reliability than other carbonaceous materials because of the oxygen functional groups that form during the activation process. This problem can be overcome by doping the material with heteroatoms to reduce the number of oxygen functional groups. In the present study, N, F co-doped activated carbon (AC-NF) was successfully prepared by a microwave-assisted hydrothermal method, utilizing commercial activated carbon (AC-R) as the precursor and ammonium tetrafluoroborate as the single source for the co-doping of N and F. AC-NF showed improved electrical conductivity ($3.8\;S\;cm^{-1}$) with N and F contents of 0.6 and 0.1 at%, respectively. The introduction of N and F improved the performance of the pertinent supercapacitor: AC-NF exhibited an improved rate capability at current densities of $0.5-50mA\;cm^{-2}$. The rate capability was higher compared to that of raw activated carbon because N and F codoping increased the electrical conductivity of AC-NF. The developed method for the co-doping of N and F using a single source is cost-effective and yields AC-NF with excellent electrochemical properties; thus, it has promising applications in the commercialization of energy storage devices.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.07a
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• pp.939-942
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• 2001

We fabricated Red Organic light-emitting devices(OLED). The Basic Device Structure is ITO/hole transfer layer, TPD(50nm)/red emitting layer, Alq3 doped with DCM2 or DCM2:rubrene(xnm)/electorn transfer layer, Alq3(50-xnm)/LiF(0.8nm)/Al(8nm) . The thickness of emitting layer(xnm) changed 5, 10, 20nm. we demonstrate red emitting OLED with dependent on the thickness and concentrators of Alq3 layer doped with DCM2 or co-doped with DCM2:ruberene. The Emission color and Brightness are changed with doping or co-doping condition, dopant concentarton. In the case of rubrene:DCM2 co-doped layer structure, the red color Purity and device efficiency is improved. The CIE index of rubrene co-doped OLED is x=0.67, y=0.31. By co-doping the Alq3 layer with DCM2, rubrene, EL efficiency improved from 0.38cd/A to 0.44cd/A in comparison whit DCM2 doped Alq3 layer.

• Journal of the Korean Chemical Society
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• v.29 no.2
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• pp.111-120
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• 1985

The oxidation reaction of CO on the catalysts 4 mol%, 8 mol%, and 12 mol% Cd-doped ${\alpha}-Fe_2O_3$ is individually investigated. Regardless of Cd doping level, over-all reaction order for the oxidation of CO is 1.5; the first order with respect to CO and the one-half order with respect to $O_2$. Over the temperature range of 350∼$460^{\circ}C$, the activation energy for CO oxidation is 10.10∼11.30Kcal/mol. From the agreement between the kinetic data and conductivity measurements, the reaction mechanism is suggested. Especially from the effect of Cd doping, the fact that catalytic activity of ${\alpha}-Fe_2O_3$ is due to the excitation of electrons which are traped on oxygen vacancy is found, and the adsorption sites for reactant molecules are found.