• Journal of the Microelectronics and Packaging Society
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• v.23 no.4
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• pp.7-10
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• 2016

The post cleaning method for clean the shadow mask using in OLED (organic light emitting diode) emitter layer is always reforming. The cleaning solution and analysis method of shadow mask is still lack and not optimized. We use the simple and useful analytical method to determine the quantity and quality of organic and inorganic residue on surface of shadow mask. Finally analyze the cleaning solution using Raman spectroscopy efficiently.

• Journal of the Korea Academia-Industrial cooperation Society
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• v.11 no.3
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• pp.1016-1022
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• 2010

An Experimental study of cleaning solution has been performed on a high capacity steam boiler burning heavy fuel oil to on-line cleaning of deposit. The deposit is mixture of soot, slag, ash, metal oxide and clinker. The traditional technology of deposit cleaning was carried hand-crafted. The conventional technology of boiler cleaning method is mechanical removal by the worker while the boiler shut down operation. In this experiment, the deposit of mixture of soot, slag, ash, metal oxide and clinker has been removed by the cleaning agents without shut down of boiler burning. This study found out the optimum cleaning solution composition. The best results have been obtained when the mixture of ammonium nitrate and $MgNO_3$ were used in cleaning solution. The various transition metal effect was investigated for optimum mixing condition. In this research, the metal compound additive of the clean solution compoition was obtained. The combustion efficiency was improved by on-line cleaning with derived clean solution compoition. On-line cleaning method prevents the fouling and corrosion in the boiler and heat exchanger.

• Korean Journal of Materials Research
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• v.16 no.2
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• pp.80-84
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• 2006

The removal efficiency of Cu and Fe contaminants on the silicon wafer surface was examined to investigate the effect of cleaning solutions on the behavior of metallic impurities. Silicon wafers were intentionally contaminated with Cu and Fe solutions by spin coating and cleaned in different types of cleaning solutions based on $NH_4OH/H_2O_2/H_2O\;(SC1),\;H_2O_2/HCl/H_2O$ (SC2), and/or HCl/$H_2O$ (m-SC2) mixtures. The concentration of metallic contaminants on the silicon wafer surface before and after cleaning was analyzed by vapor phase decomposition/inductively coupled plasma-mass spectrometry (VPD/ICP-MS). Cu ions were effectively removed both in alkali (SC1) and in acid (SC2) based solutions. When $H_2O_2$ was not added to SC2 solution like m-SC2, the removal efficiency of Cu impurities was decreased drastically. The efficiency of Cu ions in SC1 was not changed by increasing cleaning temperature. Fe ions were soluble only in acid solution like SC2 or m-SC2 solution. The removal efficiencies of Fe ions in acid solutions were enhanced by increasing cleaning temperature. It is found that the behavior of metallic contaminants as Cu and Fe from silicon surfaces in cleaning solutions could be explained in terms of Pourbaix diagram.

• Journal of Electrical Engineering and Technology
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• v.10 no.1
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• pp.295-298
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• 2015

Ozone micro-bubble cleaning system was designed, and made to develop a unique technique to clean wafers by using ozone micro-bubbles. The ozone micro-bubble cleaning system consisted of loading, cleaning, rinsing, drying and un-loading zones, respectively. In case of the cleaning the silicon wafers of a solar cell, more than 99 % of cleaning efficiency was obtained by dipping the wafers at 10 ppm of ozone for 10 minutes. Both of long cleaning time and high ozone concentration in the wet-solution with ozone micro-bubbles reduced cleaning efficiency because of the re-sorption of debris. The cleaning technique by ozone micro-bubbles can be also applied to various wafers for an ingot and LED as an eco-friendly method.

• Corrosion Science and Technology
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• v.15 no.2
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• pp.84-91
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• 2016

The transport and deposition of corrosion products in pressurized water nuclear reactor (PWR) steam generators have led to corrosion (SCC, denting etc.) problems. Lancing, mechanical cleaning and chemical cleaning have been used to reduce these problems. The methods of lancing and mechanical cleaning have limitations in removing corrosion products due to the structure of steam generator tubes. But high temperature chemical cleaning (HTCC) with EDTA is the most effective method to remove corrosion products regardless of the structure. However, EDTA in chemical cleaning aqueous solution and chemical cleaning environments affects the integrity of materials used in steam generators. The nuclear power plants have to perform the pre-test (also called as qualification test (QT)) that confirms the effect on the integrity of materials after HTCC. This is one of the series studies that assess the effect, and this study determines the effects of 20 % EDTA aqueous solution on defective tubes in high temperature chemical cleaning environments. The depth and magnitude of defects in steam generator (SG) tubes were measured by eddy current test (ECT) signals. Surface analysis and magnitude of defects were performed by using SEM/EDS. Corrosion rate was assessed by weight loss of specimens. The ECT signals (potential and depth %) of defective tubes increased marginally. But the lengths of defects, oxides on the surface and weights of specimens did not change. The average corrosion rate of standard corrosion specimens was negligible. But the surfaces on specimens showed traces of etching. The depth of etching showed a range on the nanometer. After comprehensive evaluation of all the results, it is concluded that 20 % EDTA aqueous solution in high temperature chemical cleaning environments does not have a negative effect on defective tubes.

• Membrane and Water Treatment
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• v.6 no.2
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• pp.141-160
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• 2015

This study aims to investigate the impacts of chemical cleaning on the performance of a reverse osmosis membrane. Chemicals used for simulating membrane cleaning include a surfactant (sodium dodecyl sulfate, SDS), a chelating agent (ethylenediaminetetraacetic acid, EDTA), and two proprietary cleaning formulations namely MC3 and MC11. The impact of sequential exposure to multiple membrane cleaning solutions was also examined. Water permeability and the rejection of boron and sodium were investigated under various water fluxes, temperatures and feedwater pH. Changes in the membrane performance were systematically explained based on the changes in the charge density, hydrophobicity and chemical structure of the membrane surface. The experimental results show that membrane cleaning can significantly alter the hydrophobicity and water permeability of the membrane; however, its impacts on the rejections of boron and sodium are marginal. Although the presence of surfactant or chelating agent may cause decreases in the rejection, solution pH is the key factor responsible for the loss of membrane separation and changes in the surface properties. The impact of solution pH on the water permeability can be reversed by applying a subsequent cleaning with the opposite pH condition. Nevertheless, the impacts of solution pH on boron and sodium rejections are irreversible in most cases.

• Journal of the Korean Chemical Society
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• v.47 no.6
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• pp.608-613
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• 2003

In order to remove particles on surface of post-oxide CMP wafer, new cleaning solution was prepared by mixing with DHF (Diluted HF), nonionic surfactant PAAE (Polyoxyethylene Alkyl Aryl Ether), DMSO (Dimethylsulfoxide) and D.I.W.. Silicone wafers were intentionally contaminated by silica, alumina and PSL (polystylene latex) which had different zeta potentials in cleaning solution. This cleaning solution under megasonic irradiation could remove particles and metals simultaneously at room temperature in contrast to traditional AMP (mixture of $NH_4OH,\;H_2O_2$ and D.I.W) without any side effects such as increasing of microroughness, metal line corrosion and deposition of organic contaminants. This suggests that this cleaning solution would be useful future application with copper CMP in brush cleaning process as well as traditional post CMP cleaning process.

• Korean Membrane Journal
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• v.2 no.1
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• pp.60-63
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• 2000

The effect of Candida rugosa and steapsin lipase cleaning was investigated for ultrafiltration polyethersulphone membrane (30,000 dalton MWCO) fouled with the semi-synthetic type cutting oil. The experimental by the water circulator. The enzyme cleaning effect was measured with respect to temperature, cleaning time and enzyme concentration. The optimum cleaning condition for the system was 25$^{\circ}C$ and 2 hour cleaning with 1,000 unites/mL steapsin solution. The pure water flux improvement by the steapsin solution cleaning was about 17% at the optimum cleaning condition.

• Bulletin of the Korean Chemical Society
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• v.24 no.12
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• pp.1838-1840
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• 2003

• Korean Chemical Engineering Research
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• v.59 no.4
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• pp.632-638
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• 2021

With the copper interconnection in the semiconductor process, complex residues including copper oxide, fluoride, and polymeric fluorocarbon are formed by plasma etching. In this study, a cleaning solution was prepared with a component having an amine group (-NH₂) and a carboxyl group (-COOH), and the characteristics of removing post-etch residues in the copper wiring process were analyzed. In the cleaning solution containing an amine group, the length of the component substituted with nitrogen and the length of the carbon chain influenced the cleaning effect, and the etching rate of copper oxide increased as the pH of the cleaning solution increased. The activity of the amine group is in the basic region, and the activity of the carboxyl group is in the acidic region, and the cleaning process proceeds through complex formation with copper or copper oxide in each region.