• 해양환경안전학회지
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• 제21권6호
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• pp.759-769
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• 2015

본 논문에서는 12펄스 정류기의 커패시터 중앙 DC버스에 개선된 보조전원장치를 설치하는 방법을 제안하였다. 11차 및 13차 고조파가 감소하는 이론적인 배경을 다루었으며 부하전류의 크기, 전원전압의 위상 및 크기, 커패시터 전압에 따라 개선된 보조전원의 파형 및 크기가 어떻게 제어되어야 하는지를 제시하였다. 기존의 구형파 보조전원장치를 적용한 경우는 전 영역에서 고조파 왜형률이 6~60[%]로 큰 편차를 보이지만 본 눈문에서 제안하는 개선된 보조전원장치를 적용한 경우 저 부하에서 고 부하에 이르는 전 영역에서 57~71[%] 라는 안정되고 뛰어난 고조파 왜형율 저감 효과를 보인다. 특히 10[%] 부하상태에서 기존방식은 고조파 왜형율 저감 효과가 6[%]로 효과가 거의 없지만 제안된 방식은 71[%]라는 놀라운 저감성능을 보여주고 있다. 소프트웨어 PSIM을 활용하여 컴퓨터 시뮬레이션을 통해 제안된 방식의 유효성을 입증하였다.

• Nuclear Engineering and Technology
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• 제48권5호
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• pp.1273-1279
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• 2016

Production of iodine-131 by neutron activation of tellurium in tellurium dioxide ($TeO_2$) material requires a target that meets the safety requirements. In a radiopharmaceutical production unit, a new lid for a can was designed, which permits tight sealing of the target by using tungsten inert gaswelding. The leakage rate of all prepared targets was assessed using a helium mass spectrometer. The accepted leakage rate is ${\leq}10^{-4}mbr.L/s$, according to the approved safety report related to iodine-131 production in the TRIGA Mark II research reactor (TRIGA: Training, Research, Isotopes, General Atomics). To confirm the resistance of the new design to the irradiation conditions in the TRIGA Mark II research reactor's central thimble, a study of heat effect on the sealed targets for 7 hours in an oven was conducted and the leakage rates were evaluated. The results show that the tightness of the targets is ensured up to $600^{\circ}C$ with the appearance of deformations on lids beyond $450^{\circ}C$. The study of heat transfer through the target was conducted by adopting a one-dimensional approximation, under consideration of the three transfer modes-convection, conduction, and radiation. The quantities of heat generated by gamma and neutron heating were calculated by a validated computational model for the neutronic simulation of the TRIGA Mark II research reactor using the Monte Carlo N-Particle transport code. Using the heat transfer equations according to the three modes of heat transfer, the thermal study of I-131 production by irradiation of the target in the central thimble showed that the temperatures of materials do not exceed the corresponding melting points. To validate this new design, several targets have been irradiated in the central thimble according to a preplanned irradiation program, going from4 hours of irradiation at a power level of 0.5MWup to 35 hours (7 h/d for 5 days a week) at 1.5MW. The results showthat the irradiated targets are tight because no iodine-131 was released in the atmosphere of the reactor building and in the reactor cooling water of the primary circuit.

• Restorative Dentistry and Endodontics
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• 제13권2호
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• pp.221-235
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• 1988

The purpose of this study was to observe characteristic properties through the polarization curves and EMPA images from 4 different types of amalgam obtained by using the potentiostats (EG & G PARC) & EPMA (Jeol JSM-35), to investigate the degree of corrosion of each phase of amalgam on the oxidation peak, and to identify corrosion products from the corroded amalgam by use of X-ray diffractometer(Rigaku). After each amlgam alloy and Hg were triturated as the direction of the manufacturer by means of the mechanical amalgamator(Shofu), the triturated mass was inserted into the cylindrical metal mold which was 12mm in diameter and 10mm in height and was condensed by means of routine manner. The specimen was removed from the mold and stored at room temperature for about 7 days. The standard surface preparation was routinely carried out. Anodic polarization measurement was employed to compare the corrosion behaviours of the amalgams in 0.9% saline solution(pH6.8~7.0) and artificial saliva (pH6.8~7.0) at $37^{\circ}C$. The open circuit potential was determined after 30 minutes' immersion of specimen in electrolyte and the potential scan was begun at the potential of 100mV cathodic from the corrosion potential. The scan rate was 1mV/sec and the surface area of amalgam exposed to the solution was 0.64$cm^2$ for each specimen. All the potentials reported are with respect to a saturated calomel electrode (SCE). EPMA images on the determined oxidation peaks of each amalgam in artificial saliva were observed. X-ray diffraction patterns of each sample were recorded before and after polarization in artificial saliva (Aristaloy, Caulk Spherical, Dispersalloy and Tytin: at +770mV, +585mV, +8.10m V and +680m V respectively) by use of a recording diffractometer. Nickel filtered Cu $K_{{\alpha}_1}$ radiation was used and sample was scanned at $4^{\circ}(2{\theta})/min.$ from $25^{\circ}$ to $80^{\circ}$. The following results were obtained. 1. Oxidation peak potential in artificial saliva shifted to more anodic direction than that in saline solution. 2. The corrosion potential of high copper amalgam was more anodic than the potential of low copper amalgam. 3. The current density was lower in artificial saliva than in saline solution. 4. One of the corrosion products, AgCl was identified by X-ray diffraction analysis. 5. ${\gamma}_2$ phase was the most susceptible to corrosion and e phase was stable in low copper amalgam and ${\eta}$' phase and Ag-Cu eutectic were susceptible to corrosion in high copper amalgam.

• 지구물리와물리탐사
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• 제17권4호
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• pp.247-252
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• 2014

가곡광산은 스카른형 광상으로서 섬아연석, 방연석, 황동석, 자류철석 등의 황화광물을 수반한다. 이러한 광물은 전극분극에 의한 IP effect가 크기 때문에 광대역유도분극(spectral induced polarization; SIP)법을 이용하여 효과적으로 탐사할 수 있다. 따라서 이 연구는 황화광물 함량 및 입자의 크기를 지시하는 충전도와 시간상수를 실내 SIP 측정을 통하여 구하고 이로부터 가곡광산 내 두 광체에 대한 광화작용 차이를 비교하는데 목적을 두었다. 이를 위해 남쪽의 월곡광체와 북쪽의 선곡광체를 대상으로 시료를 채취하였다. 시료의 광화작용 특성을 파악하기 위해 휴대용 XRF 측정기를 이용하여 금속의 함량을 측정했고, 실내 암석 SIP 측정시스템을 이용하여 SIP 자료를 획득했다. XRF 측정결과 가곡광산 광체는 철, 아연, 납, 구리 등의 금속을 수반하고 있다. 특히 아연과 철의 함량이 다른 금속과 비교하여 매우 높았고, 이 두 금속은 현미경 관찰을 통하여 섬아연석과 자류철석에 의한 영향으로 판단하였다. SIP 등가회로 분석 결과, 월곡광체가 선곡광체에 비하여 금속의 함량이 더 높았기 때문에 황화광물을 더 많이 수반하는 것으로 판단했고, 이는 SIP에서 충전도의 결과와 잘 부합한다. 반면 선곡광체의 시간상수가 더 컸기 때문에 선곡광체가 월곡광체보다 황화광물 입자 크기가 더 큰 것으로 판단했다.

• 마이크로전자및패키징학회지
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• 제19권1호
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• pp.39-45
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• 2012

Cu-Cu 패턴의 직접접합 공정을 위하여 Buffered Oxide Etch(BOE) 및 Hydrofluoric acid(HF)의 습식 조건에 따른 Cu와 $SiO_2$의 식각 특성에 대한 평가를 수행하였다. 접촉식 3차원측정기(3D-Profiler)를 이용하여 Cu와 $SiO_2$의 단차 및 Chemical Mechanical Polishing(CMP)에 의한 Cu의 dishing된 정도를 분석 하였다. 실험 결과 BOE 및 HF 습식 식각 시간이 증가함에 따라 단차가 증가 하였고, BOE가 HF보다 더 식각 속도가 빠른 것을 확인하였다. BOE 및 HF 습식 식각 후 Cu의 dishing도 식각시간 증가에 따라 감소하였다. 식각 후 산화막 유무를 알아보기 위해 Cu표면을 X-선 광전자 분광법(X-ray Photoelectron Spectroscopy, XPS)를 이용하여 분석 한 결과 HF습식 식각 후 BOE습식 식각보다 Cu표면산화막이 상대적으로 더 얇아 진 것을 확인하였다.

• 전자공학회논문지
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• 제50권5호
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• pp.61-66
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• 2013

본 논문에서는 절연물체로 $Si_3N_4$를 사용한 MIM 커패시터의 정합특성의 온도에 대한 의존성에 대해 분석하였다. 온도가 올라감에 따라 정합특성이 열화 되는 현상이 나타났다. 즉, $25^{\circ}C$, $75^{\circ}C$ 그리고 $125^{\circ}C$에서 $Si_3N_4$ MIM 커패시터의 정합특성 계수는 각각 0.5870, 0.6151, $0.7861%{\mu}m$으로 측정 되었다. 이러한 현상은 온도가 증가함에 따라 커패시터 내부의 캐리어들의 이동도가 감소하고 전하의 농도가 많아지기 때문이라고 할 수 있다. 따라서 고온에서의 $Si_3N_4$ MIM 커패시터의 정합특성의 분석은 아날로그 집적회로나 SoC (System on Chip)에 아주 중요하고 필수적인 연구라고 할 수 있다.

• 대한가정학회지
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• 제40권12호
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• pp.85-108
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• 2002

The objectives of this study were to investigate the trend of the attitude and the behavior about consumer's internet premium advertisement and its application and the factors which influence on the attitude and the behavior about consumer's premium advertisement and its application; the demographic variables, internet communication-environment variables and variables in relation to consumer's premium advertisement application. For these purpose, the data collected two way: internet survey and questionnaire survey. The data used in this study included people who have looked an internet Premium Advertisement more than once during internet use. Major findings were as following: (1) The attitude of internet premium advertisement and its application could be described as the mean 34.16 md 24.61 separately(3.11 and 2.73 point on 5.00 points scale). The behavior of application about internet premium advertisement was measured as a behavior of application whether or not; application 18.7% and unapplication 81.3%. (2) The attitude of application about internet premium advertisement was significantly different according to age, joining frequency on internet, past experience of winning a premium, purchasing information search, interesting connection on the internet, the risk about the money loss and negative evaluation of other persons, the economical values of premiums, winning possibility, and preferable premiums. The behavior of application about internet premium advertisement, the behavior of application whether or not was significantly different according to sex, age, school career, a circuit speed, a period of using, joining frequency and a using place, past experience of winning a premium, purchasing information search, interesting connection on the internet, the risk about the negative evaluation of other persons, the economical values of premiums, winning possibility, and preferable premiums. (3) When looking at the influence of variables about the attitude of application about internet premium advertisement, the most influence variables was the past experience of winning a premium, and next was winning possibility, sex, the interest about the premiums which made the consumer want to apply, the economical values of premiums, the purpose of purchase information search and the using time. The explanation of those variables were 22.6%. As the result of the Logistic analysis, it was found that the frequency of the internet connection, the past experience of winning premiums, the risk about the outflow of credit information, interesting premiums, and premium advertisement were the most important variables to affect the possibility of the behavior of application about internet premium advertisement critically.

• 한국정보통신학회논문지
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• 제20권10호
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• pp.1927-1934
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• 2016

본 논문에서는 일반적인 실리콘 기반 n-MOSFET(n-type Metal Oxide Semiconductor Field Effect Transistor)의 절연 산화막 계면에서 방사선으로부터 유발되는 누설전류 경로를 차단하기 위하여 I형 게이트 n-MOSEFT 구조를 제안하였다. I형 게이트 n-MOSFET 구조는 상용 0.18um CMOS(Complementary Metal Oxide Semiconductor) 공정에서 레이아웃 변형 기법을 이용하여 설계되었으며, ELT(Enclosed Layout Transistor)와 DGA(Dummy Gate-Assisted) n-MOSFET와 같은 레이아웃 변형 기법을 사용한 기존 내방사선 전자소자의 구조적 단점을 개선하였다. 따라서, 기존 구조와 비교하여 반도체 칩 제작에서 회로 설계의 확장성을 확보할 수 있다. 또한, 내방사선 특성 검증을 위하여 TCAD 3D(Technology Computer Aided Design 3-dimension) tool을 사용하여 모델링과 모의실험을 수행하였고, 그 결과 I형 게이트 n-MOSFET 구조의 내방사선 특성을 확인하였다.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2008년도 하계학술대회 논문집 Vol.9
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• pp.62-62
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• 2008

As micro-system move toward higher speed and miniaturization, requirements for embedding the passive components into printed circuit boards (PCBs) grow consistently. They should be fabricated in smaller size with maintaining and even improving the overall performance. Miniaturization potential steps from the replacement of surface-mount components and the subsequent reduction of the required wiring-board real estate. Among the embedded passive components, capacitors are most widely studied because they are the major components in terms of size and number. Embedding of passive components such as capacitors into polymer-based PCB is becoming an important strategy for electronics miniaturization, device reliability, and manufacturing cost reduction Now days, the dielectric films deposited directly on the polymer substrate are also studied widely. The processing temperature below $200^{\circ}C$ is required for polymer substrates. For a low temperature deposition, bismuth-based pyrochlore materials are known as promising candidate for capacitor $B_2Mg_{2/3}Nb_{4/3}O_7$ ($B_2MN$) multi layers were deposited on Pt/$TiO_2/SiO_2$/Si substrates by radio frequency magnetron sputtering system at room temperature. The physical and structural properties of them are investigated by SEM, AFM, TEM, XPS. The dielectric properties of MIM structured capacitors were evaluated by impedance analyzer (Agilent HP4194A). The leakage current characteristics of MIM structured capacitor were measured by semiconductor parameter analysis (Agilent HP4145B). 200 nm-thick $B_2MN$ muti layer were deposited at room temperature had capacitance density about $1{\mu}F/cm^2$ at 100kHz, dissipation factor of < 1% and dielectric constant of > 100 at 100kHz.

• 전자공학회논문지
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• 제51권7호
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• pp.230-238
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• 2014

본 논문에서는 상호 유도 정전하 방식 ITO센서의 불량 여부를 판별하기 위해 ITO센서 내부의 전극막들이 이루고 있는 개별 노드에 대해 상호 유도 정전하 데이터를 이용하여 ITO센서의 정확한 분석과 검사가 가능한 방법을 제안한다. 모바일과 태블릿과 같은 소형 전자제품뿐만 아니라, 대형 전자제품에서도 입력 장치로 사용되는 상호 유도 정전하 방식 ITO센서의 구조적 특성을 분석하고 터치스크린 패널 IC를 이용해 ITO센서를 검사하기 위한 회로를 설계한다. 상호유도 정전하의 충전과 방전에 관련된 변수를 설정하고, ITO센서의 노드별 데이터를 통해 불량 발생 시 정확한 위치를 찾아 분석할 수 있도록 구현한다. 상호 유도 정전하 ITO센서의 1차 실험데이터를 통해 양품 유효 범위를 설정하고, 마지막으로 1차 실험을 통해 설정된 ITO센서 유효범위는 2차 실험을 통해 ITO센서의 노드별 측정 데이터를 이용하여 실험에 사용된 시료로 정확성과 효율성을 검증 한다.