• 한국결정성장학회지
• /
• 제17권6호
• /
• pp.256-263
• /
• 2007

For $P_B=50Torr,\;P_T=5401Torr,\;T_S=450^{\circ}C,\;{\Delta}T=20K$, Ar=5, Pr=3.34, Le=0.01, Pe=4.16, Cv=1.05, adiabatic and linear thermal profiles at walls, the intensity of solutal convection (solutal Grashof number $Grs=7.86{\times}10^6$) is greater than that of thermal convection (thermal Grashof number $Grt=4.83{\times}10^5$) by one order of magnitude, which is based on the solutally buoyancy-driven convection due to the disparity in the molecular weights of the component A ($Hg_2Cl_2$) and B (He). With increasing the partial pressure of component B from 20 up to 800 Torr, the rate is decreased exponentially. It is also interesting that as the partial pressure of component B is increased by a factor of 2, the rate is approximately reduced by a half. For systems under consideration, the rate increases linearly and directly with the dimensionless Peclet number which reflects the intensity of condensation and sublimation at the crystal and source region. The convective transport decreases with lower g level and is changed to the diffusive mode at $0.1g_0$. In other words, for regions in which the g level is $0.1g_0$ or less, the diffusion-driven convection results in a parabolic velocity profile and a recirculating cell is not likely to occur. Therefore a gravitational acceleration level of less than $0.1g_0$ can be adequate to ensure purely diffusive transport.

• 공업화학
• /
• 제26권6호
• /
• pp.746-752
• /
• 2015

본 연구에서는 $Hg_2Cl_2-NO$의 물리적 승화법 공정에서의 확산-대류에 미치는 에스펙트 비율(길이/폭)의 영향에 대한 것이다. 원료물질 영역과 결정영역에서의 온도 차 20 K, 벽에서의 선형 온도분포를 가진 계에서, 대류의 영향 때문에, 총몰플럭스와 상호계면에서의 비균일성에 관하여서는, 에스펙트 비율이 2인 경우가 비율이 5인 경우보다 상당히 크다. 지상중력 하에서의 최고 총몰플럭스는 지상중력의 0.1 상태에 비하여 대략 2배 정도 크다. 에스펙트 비율을 2에서 5로 증가시켰을 때, 확산-대류형이 대류형으로 전이되며, 또한 확산의 강도도 확산-대류형의 강도를 지배하게 된다.

• 한국진공학회:학술대회논문집
• /
• 한국진공학회 2012년도 제43회 하계 정기 학술대회 초록집
• /
• pp.362-362
• /
• 2012

Graphene-based materials have been gaining the unprecedented academic and industrial applications, due to the unique charge transport as a new kind of 2-dimensional materials. The applications incorporate electronic devices, nonvolatile memories, batteries, chemical sensors, etc. based on the electrical, mechanical, structural, optical, and chemical features newly reported. The current work employs thermal chemical vapor deposition involving H2 and CH4, in order to synthesize the 2-dimensional graphene materials. The qualitative/quantitative characterizations of the synthesized graphene materials are evaluated using Raman spectroscopy and Hall Measurements, In particular, the effect of processing variables is systematically investigated on the formation of graphene materials through statistical design of experiments. The optimized graphene materials will be attempted towards the potential applications to flat-panel displays.

• Bulletin of the Korean Chemical Society
• /
• 제16권6호
• /
• pp.515-518
• /
• 1995

YSe1.83 was synthesized by vapor transport technique and its crystal structure was determined. The structure was isostructure of LaTe2-x, which was layered structure consisting of two-atom thick layers of YSe with distorted NaCl-type structure and one-atom thick layer of Se. The substructure of YSe1.83 was tetragonal with space group of P4/nmm and a=4.011(2) and c=8.261(3) Å with final R/Rw=6.4/6.9 %. The superstructure with asuper=2a, bsuper=6b and csuper=2c was found. The measurements of electronic and magnetic properties of this compound indicate that it is an electronic insulator and diamagnet.

• 한국산학기술학회논문지
• /
• 제19권9호
• /
• pp.536-542
• /
• 2018

이산화주석은 Rutile 구조를 갖는 Oxygen-Deficient n-type 반도체 물질로서, $H_2$, CO, $CO_2$ 등의 가스 분자가 표면에 흡착되면 전기저항이 변하는 특성을 가지고 있고, 이러한 성질을 활용하면 다양한 가스의 감지가 가능하기 때문에 가스센서로 연구가 활발히 이루어지고 있다. 나노구조물의 경우 Bulk 상태보다 체적 대비 표면적비가 높기 때문에 기체의 흡착이 유리하고, 가스 센서의 성능이 향상될 수 있다. 본 연구에서는 Thermal CVD 공정을 이용하여 SnO Nanoplatelet을 Si 기판위에 Dense하게 성장시켰다. 기상 수송 방법(Vapor Transport Method)으로 성장된 SnO 나노구조물을 Thermal CVD System을 이용하여 산소분위기에서 $830^{\circ}C$ 및 $1030^{\circ}C$에서 열처리(Post-Annealing)하여 $SnO_2$ 상(Phase)을 갖도록 하였다. 열처리 과정동안 쳄버의 압력을 4.2 Torr로 일정하게 유지시켰다. 열처리 된 SnO 나노구조물의 결정학적 특성을 Raman Spectroscopy 및 XRD 분석을 통하여 확인하였고, 형태학적 변화를 주사전사현미경(Scanning Electron Microscopy)을 통하여 확인하였다. 분석결과 SnO 나노구조물은 열처리 과정을 통하여 $SnO_2$ 나노구조물로 상변환 되었다.

• 한국결정성장학회지
• /
• 제14권6호
• /
• pp.281-289
• /
• 2004

The temperature hump is found to be most efficient in suppressing parasitic nucleation. With the temperature humps, there are found to be observed in undersaturations along the transport path for convective-diffusive processes ranging from $D_{AB}$ = 0.0584 $\textrm{cm}^2$/s to 0.584 $\textrm{cm}^2$/s, axial positions from 0 to 7.5 cm. With decreasing Ar = 5 to 3.5, the temperature difference is increased because of the imposed nonlinear temperature profile but the rate is decreased. For 2 $\leq$ Ar $\leq$ 3.5, the rate is increased with the aspect ratio as well as the temperature difference. Such an occurrence of a critical aspect ratio is likely to be due to the effect of sidewall and much small temperature difference. The rate is decreased exponentially with the aspect ratio for 2 $\leq$ Ar $\leq$ 10. Also, the rate is exponentially decreased with partial pressure of component B, P for 1 $\leq$ P $\leq$ 100 Torr.$ B/ $\leq$ 100 Torr.

• 한국세라믹학회지
• /
• 제24권6호
• /
• pp.519-526
• /
• 1987

TiC was deposited onto several substrate steels by the Chemical Vapor Deposition technique from TiCl4-CH4-H2 gas mixtures in the horizontal resistance furnace. Deposition rates and morphologies of the coatings were investigated with the carbon contents. Deposition thickness increased linearly with the deposition time in the Presence of CH4 gas. The various interlayers of coating by EDS and X-ray Diffraction were proved as Cr7C3 and Fe3C. Chromium contents did not affect the preferred orientation of TiC deposit. The deposition was controlled by a mass transport and a surface reaction in case of 1 wt% C-5.25 wt% Cr steel irrespective of deposition temperature.

• 산업기술연구
• /
• 제14권
• /
• pp.63-75
• /
• 1994

The objective of this research is to analyze the phenomena of negative ion behavior in silane plasma chemical vapor deposition. Based on the plasma chemistry, the model equations for the formation and transport of negative ions were proposed and solved. The evolutions of gaseous species along the reactor were presented for several conditions of process variables such as reactor pressure, total gas flow rate, and electric field. Based on the model results, it is found that : (1) The concentration profiles of positive ions show the sharp peaks at the center of plasma reactor. (2) Most of negative ions are located in bulk plasma region, because the negative ions are excluded from the sheath region by electrostatic repulsion.

• 한국재료학회지
• /
• 제33권11호
• /
• pp.491-496
• /
• 2023

As the demand for p-type semiconductors increases, much effort is being put into developing new p-type materials. This demand has led to the development of novel new p-type semiconductors that go beyond existing p-type semiconductors. Copper iodide (CuI) has recently received much attention due to its wide band gap, excellent optical and electrical properties, and low temperature synthesis. However, there are limits to its use as a semiconductor material for thin film transistor devices due to the uncontrolled generation of copper vacancies and excessive hole doping. In this work, p-type CuI semiconductors were fabricated using the chemical vapor deposition (CVD) process for thin-film transistor (TFT) applications. The vacuum process has advantages over conventional solution processes, including conformal coating, large area uniformity, easy thickness control and so on. CuI thin films were fabricated at various deposition temperatures from 150 to 250 ℃ The surface roughness root mean square (RMS) value, which is related to carrier transport, decreases with increasing deposition temperature. Hall effect measurements showed that all fabricated CuI films had p-type behavior and that the Hall mobility decreased with increasing deposition temperature. The CuI TFTs showed no clear on/off because of the high concentration of carriers. By adopting a Zn capping layer, carrier concentrations decreased, leading to clear on and off behavior. Finally, stability tests of the PBS and NBS showed a threshold voltage shift within ±1 V.

• 융합정보논문지
• /
• 제8권5호
• /
• pp.95-100
• /
• 2018

금속 산화물/그래핀 형태의 복합 나노소재는 높은 전기용량을 갖는 2차 전지의 전극용 소재 또는 고감도 가스 센서의 감지물질 등으로 활용되는 매우 유용한 기능성 소재이다. 본 논문에서는 열 화학기상증착(CVD, Chemical Vapor Deposition)으로 Cu Foil 위에 대면적으로 합성된 CVD 그래핀 및 고정렬 열분해 흑연(HOPG, Highly Oriented Pyrolytic Graphite)으로부터 기계적으로 박리된 그래핀 기판 위에 이산화바나듐($VO_2$) 나노구조물을 기상수송방법으로 직접 성장시키는 연구를 수행하였다. 연구결과 CVD 그래핀 기판의 경우, 그래핀 결정 경계에서 상대적으로 많이 존재하는 기능기들이 $VO_2$ 나노구조물에서 핵형성의 씨앗으로 작용하는 것이 확인되었다. 반면에 HOPG에서 기계적으로 박리된 그래핀 나노시트 표면에는 기능기가 균일하게 분포하기 때문에, 2차원과 3차원 형태로 $VO_2$ 나노구조물이 성장되었다. 이러한 연구결과는 고기능성 $VO_2$/그래핀 나노복합소재를 이용하여 높은 전기용량을 갖는 2차 전지 전극소재 및 고감도 가스 센서의 감지물질 합성에 유용하게 활용될 것으로 전망된다.