• Journal of the Korean Crystal Growth and Crystal Technology
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• v.17 no.6
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• pp.256-263
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• 2007

For $P_B=50Torr,\;P_T=5401Torr,\;T_S=450^{\circ}C,\;{\Delta}T=20K$, Ar=5, Pr=3.34, Le=0.01, Pe=4.16, Cv=1.05, adiabatic and linear thermal profiles at walls, the intensity of solutal convection (solutal Grashof number $Grs=7.86{\times}10^6$) is greater than that of thermal convection (thermal Grashof number $Grt=4.83{\times}10^5$) by one order of magnitude, which is based on the solutally buoyancy-driven convection due to the disparity in the molecular weights of the component A ($Hg_2Cl_2$) and B (He). With increasing the partial pressure of component B from 20 up to 800 Torr, the rate is decreased exponentially. It is also interesting that as the partial pressure of component B is increased by a factor of 2, the rate is approximately reduced by a half. For systems under consideration, the rate increases linearly and directly with the dimensionless Peclet number which reflects the intensity of condensation and sublimation at the crystal and source region. The convective transport decreases with lower g level and is changed to the diffusive mode at $0.1g_0$. In other words, for regions in which the g level is $0.1g_0$ or less, the diffusion-driven convection results in a parabolic velocity profile and a recirculating cell is not likely to occur. Therefore a gravitational acceleration level of less than $0.1g_0$ can be adequate to ensure purely diffusive transport.

• Applied Chemistry for Engineering
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• v.26 no.6
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• pp.746-752
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• 2015

This study investigates the effects of aspect ratio (transport length-to-width) on diffusive-convection for physical vapor transport processes of $Hg_2Cl_2-NO$ system. For a system with the temperature difference of 20 K between an interface at the source material region and growing crystal interface, the linear temperature profiles at walls, the total molar fluxes at Ar = 2 are much greater than Ar = 5 as well as the corresponding nonuniformities in interfacial distributions due to the effect of convection. The maximum total molar flux at the gravitational acceleration of 1 $g_0$ is greater twice than at the level of 0.1 $g_0$, where g0 denotes the gravitational acceleration on earth. With increasing aspect ratio from 2 to 5, a diffusive-convection mode is transited into the diffusion mode, and then the strength of diffusion is predominant over the strength of diffusive-convection.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.08a
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• pp.362-362
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• 2012

Graphene-based materials have been gaining the unprecedented academic and industrial applications, due to the unique charge transport as a new kind of 2-dimensional materials. The applications incorporate electronic devices, nonvolatile memories, batteries, chemical sensors, etc. based on the electrical, mechanical, structural, optical, and chemical features newly reported. The current work employs thermal chemical vapor deposition involving H2 and CH4, in order to synthesize the 2-dimensional graphene materials. The qualitative/quantitative characterizations of the synthesized graphene materials are evaluated using Raman spectroscopy and Hall Measurements, In particular, the effect of processing variables is systematically investigated on the formation of graphene materials through statistical design of experiments. The optimized graphene materials will be attempted towards the potential applications to flat-panel displays.

• Bulletin of the Korean Chemical Society
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• v.16 no.6
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• pp.515-518
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• 1995

YSe1.83 was synthesized by vapor transport technique and its crystal structure was determined. The structure was isostructure of LaTe2-x, which was layered structure consisting of two-atom thick layers of YSe with distorted NaCl-type structure and one-atom thick layer of Se. The substructure of YSe1.83 was tetragonal with space group of P4/nmm and a=4.011(2) and c=8.261(3) Å with final R/Rw=6.4/6.9 %. The superstructure with asuper=2a, bsuper=6b and csuper=2c was found. The measurements of electronic and magnetic properties of this compound indicate that it is an electronic insulator and diamagnet.

• Journal of the Korea Academia-Industrial cooperation Society
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• v.19 no.9
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• pp.536-542
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• 2018

Tin dioxide, $SnO_2$, is a well-known n-type semiconductor that shows change in resistance in the presence of gas molecules, such as $H_2$, CO, and $CO_2$. Considerable research has been done on $SnO_2$ semiconductors for gas sensor applications due to their noble property. The nanomaterials exhibit a high surface to volume ratio, which means it has an advantage in the sensing of gas molecules. In this study, SnO nanoplatelets were grown densely on Si substrates using a thermal CVD process. The SnO nanostructures grown by the vapor transport method were post annealed to a $SnO_2$ phase by thermal CVD in an oxygen atmosphere at $830^{\circ}C$ and $1030^{\circ}C$. The pressure of the furnace chamber was maintained at 4.2 Torr. The crystallographic properties of the post-annealed SnO nanostructures were investigated by Raman spectroscopy and XRD. The change in morphology was confirmed by scanning electron microscopy. As a result, the SnO nanostructures were transformed to a $SnO_2$ phase by a post-annealing process.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.14 no.6
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• pp.281-289
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• 2004

The temperature hump is found to be most efficient in suppressing parasitic nucleation. With the temperature humps, there are found to be observed in undersaturations along the transport path for convective-diffusive processes ranging from $D_{AB}$ = 0.0584 $\textrm{cm}^2$/s to 0.584 $\textrm{cm}^2$/s, axial positions from 0 to 7.5 cm. With decreasing Ar = 5 to 3.5, the temperature difference is increased because of the imposed nonlinear temperature profile but the rate is decreased. For 2 $\leq$ Ar $\leq$ 3.5, the rate is increased with the aspect ratio as well as the temperature difference. Such an occurrence of a critical aspect ratio is likely to be due to the effect of sidewall and much small temperature difference. The rate is decreased exponentially with the aspect ratio for 2 $\leq$ Ar $\leq$ 10. Also, the rate is exponentially decreased with partial pressure of component B, P for 1 $\leq$ P $\leq$ 100 Torr.$ B/ $\leq$ 100 Torr.

• Journal of the Korean Ceramic Society
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• v.24 no.6
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• pp.519-526
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• 1987

TiC was deposited onto several substrate steels by the Chemical Vapor Deposition technique from TiCl4-CH4-H2 gas mixtures in the horizontal resistance furnace. Deposition rates and morphologies of the coatings were investigated with the carbon contents. Deposition thickness increased linearly with the deposition time in the Presence of CH4 gas. The various interlayers of coating by EDS and X-ray Diffraction were proved as Cr7C3 and Fe3C. Chromium contents did not affect the preferred orientation of TiC deposit. The deposition was controlled by a mass transport and a surface reaction in case of 1 wt% C-5.25 wt% Cr steel irrespective of deposition temperature.

• Journal of Industrial Technology
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• v.14
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• pp.63-75
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• 1994

The objective of this research is to analyze the phenomena of negative ion behavior in silane plasma chemical vapor deposition. Based on the plasma chemistry, the model equations for the formation and transport of negative ions were proposed and solved. The evolutions of gaseous species along the reactor were presented for several conditions of process variables such as reactor pressure, total gas flow rate, and electric field. Based on the model results, it is found that : (1) The concentration profiles of positive ions show the sharp peaks at the center of plasma reactor. (2) Most of negative ions are located in bulk plasma region, because the negative ions are excluded from the sheath region by electrostatic repulsion.

• Korean Journal of Materials Research
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• v.33 no.11
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• pp.491-496
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• 2023

As the demand for p-type semiconductors increases, much effort is being put into developing new p-type materials. This demand has led to the development of novel new p-type semiconductors that go beyond existing p-type semiconductors. Copper iodide (CuI) has recently received much attention due to its wide band gap, excellent optical and electrical properties, and low temperature synthesis. However, there are limits to its use as a semiconductor material for thin film transistor devices due to the uncontrolled generation of copper vacancies and excessive hole doping. In this work, p-type CuI semiconductors were fabricated using the chemical vapor deposition (CVD) process for thin-film transistor (TFT) applications. The vacuum process has advantages over conventional solution processes, including conformal coating, large area uniformity, easy thickness control and so on. CuI thin films were fabricated at various deposition temperatures from 150 to 250 ℃ The surface roughness root mean square (RMS) value, which is related to carrier transport, decreases with increasing deposition temperature. Hall effect measurements showed that all fabricated CuI films had p-type behavior and that the Hall mobility decreased with increasing deposition temperature. The CuI TFTs showed no clear on/off because of the high concentration of carriers. By adopting a Zn capping layer, carrier concentrations decreased, leading to clear on and off behavior. Finally, stability tests of the PBS and NBS showed a threshold voltage shift within ±1 V.

• Journal of Convergence for Information Technology
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• v.8 no.5
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• pp.95-100
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• 2018

The metal oxide/graphene nanocomposites are promising functional materials for high capacitive electrode material of secondary batteries, and high sensitive material of high performance gas sensors. In this study, vanadium dioxide($VO_2$) nanostructrures were grown on CVD graphene which was synthesized on Cu foil by thermal CVD, and exfoliated graphene which was exfoliated from highly oriented pyrolytic graphite(HOPG) using a vapor transport method. As results, $VO_2$ nanostructures on CVD graphene were grown preferential growth on abundant functional groups of graphene grain boundaries. The functional groups are served to nucleation site of $VO_2$ nanostructures. On the other hand, 2D & 3D $VO_2$ nanostructures were grown on exfoliated graphene due to uniformly distributed functional groups on exfoliated graphene surface. The characteristics of morphology controlled growth of $VO_2$/graphene nanocomposites would be applied to fabrication process for high capacitive electrode materials of secondary batteries, and high sensitive materials of gas sensors.