• Title/Summary/Keyword: chemical shift

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Anodic Oxidation of Silicon in EPW Solution (EPW 용액에서의 실리콘 양극 산화막 형성에 관한 연구)

  • Bu, Jong-Uk;Kim, Seon-Mi;Kim, Seung-Hui;Kim, Seong-Tae;Gwon, Suk-In
    • Journal of the Korean Vacuum Society
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    • v.2 no.2
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    • pp.181-187
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    • 1993
  • We have studied the anodic oxidation of silicon in the anisotropic etchant of EPW(Ethylenediamine, Pyrocatechol and Water) solution using the cyclic polarization technique. The samples have been characterized by means of X-ray photoelectron spectroscopy(XPS) and secondary ion mass spectrometry (SIMS). The results of cyclic polarization experiments show that the anodic oxides formed on p- and n-type silicon wafers break down at the same potential while breakdown does not occur up to open circuit potential in the case of $p^+$-Si. Strong etch-resistance of $p^+$-XPS. SIMS depth profiles suggest that the critical concentration of boron for etch-stop to occur appears to be much higher than what is widely believed.

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증착조건에 따른 $ZrO_2$ 게이트 유전막의 특성

  • 유정호;남석우;고대홍
    • Proceedings of the Korean Vacuum Society Conference
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    • 2000.02a
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    • pp.106-106
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    • 2000
  • 반도체 소자가 미세화 됨에 따라 게이트 유전막으로 사용되는 SiO2의 박막화가 요구되나, boron penetration에 의한 Vt shift, 게이트 누설전류, 다결정 실리콘 게이트의 depletion effect 그리고 quantum mechanical effect 때문에 ~20 급에서 한계를 나타내고 있다. 이에 0.1$\mu\textrm{m}$이상의 design rule을 갖는 logic이나 memory 소자에서 요구되어지는 ~10 급 게이트 산화막은 SiO2(K=3.9)를 대신하여 고유전율을 갖는 재료의 채택이 필수 불가결하게 되었다. 고유전 박막 재료를 사용하면, 두께를 두껍게 해도 동일한 inversion 특성이 유지되고 carrier tunneling 이 덜하여 등가 산화막의 두께를 줄일 수 있다. 이러한 고유전박막 재료중 가장 활발히 연구되고 있는 재료는 Ta2O5, Al2O3, STO 그리고 BST 등이 있으나 Ta2O5, STO, BST 등은 실리콘 기판과 직접 반응을 한다는 문제를 가지고 있으며, Al2O3는 유전율이 낮의 재료가 최근 주목받고 있다. 본 실험에서는 ZrO2, HfO2 또는 그 silicates 등의 재료가 최근 주목 받고 있다. 본 실험에서는 ZrO2 박막의 증착조건에 따른 물리적, 전기적 특성 변화에 대하여 연구하였다. RCA 방식으로 세정한 P-type (100) 실리콘 기판위에 reactive DC sputtering 방법으로 압력 5mtorr, power 100~400W, 기판온도는 100-50$0^{\circ}C$로 변화시켜 ZrO2 박막을 증착한 후 산소와 아르곤 분위기에서 400-80$0^{\circ}C$, 10-120min으로 열처리하였다. 증착직후의 시편들과 열처리한 ZrO2 박막의 미세구조와 전기적 특성 변화를 관찰하였다. 우선 굴절율(RI)를 이용해 ZrO2 박막의 밀도를 예측하여 power와 기판온도에 따라 이론값 2.0-2.2 에 근접한 구조를 얻은 후 XRD, XPS, AFM, 그리고 TEM을 사용하여 ZrO2 박막의 chemical bonding, surface roughness 그리고 interfacial layer의 특성을 관찰하였다. 그리고 C-V, I-V measurement를 이용해 capacitance, 유전율, 누설전류 등의 전기적 특성을 관찰해 최적 조건을 설정하였다.

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Mineralogy of Clinopyroxene from the Geodo Mine (거도광산의 단사휘석에 관한 광물학적 연구)

  • 최진범;김수진
    • Journal of the Mineralogical Society of Korea
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    • v.2 no.1
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    • pp.26-36
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    • 1989
  • Clinopyroxene in the Geodo mine belongs to diopside-hedenbergite series. It is widely distributed throughout the mine area together with garnet and is also closely related with Fe-mineralization. Clinopyroxenes in the Geodo mine including two samples from the sangdong and Ulchin Mines are studied using polarized microscope, EPMA, XRD, and IR spectroscopy for occurrence, chemistry, structure, and crystal chemistry. Especially, variations in unit-cell parameters are examined in relation with the substitution scheme between Fe and Mg cations. Clinopyroxenes in the Geodo mine occur in both endoskarn and exoskarn zone. It is mostly anhedral to subhedral with fine- to medium-grained in texture, but some have bigger crystals of short prismatic or columnar habits. Clinopyroxene occurs as monomineralic or is associated with mostly garnet and sometimes with actinolite, magnetite, epidote, and chlorite. Chemical analysis reveals that the Geodo clinopyroxene is diopsidic in composition (Di: 65-96%). This fact is in good contrast with garnet chemistry showing mostly andraditic (An: 41-82%). Especially, clinopyroxene coexisting with magnetite belongs to nearly end member diopside (Di: 97-99%). Thus, diopside-andradite pair indicates that Geodo skarns were formed under the reduced environment. X-ray diffraction analysis shows unit-cell parameters vary with increase of Fe contents: a = 9.765-9.838$\AA$, b = 8.943-9.020$\AA$, c= 5.240-5.253$\AA$.$\beta$ = 105.70-104.83$^{\circ}$, and V =440.64-448.19$\AA$3. It is noted from the least square regression that a, b and V increase linearly with increase of Fe content, while $\beta$ slightly decreases and c remains nearly unchanged as change in Fe content. These trends are to difference between synthetic and natural clinopyroxenes. This fact is also recognized in IR spectra which show a slight shift of several absorption bands toward lower wavenumber region with increasing Fe content.

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The Structural and Optical Properties of GaAs- SiO2 Composite Thin Films With Varying GaAs Nano-particle Size (GaAs 나노입자 크기에 따른 SiO2 혼합박막의 구조적 광학적 특성)

  • Lee, Seong-Hun;Kim, Won-Mok;Sin, Dong-Uk;Jo, Seong-Hun;Jeong, Byeong-Gi;Lee, Taek-Seong;Lee, Gyeong-Seok
    • Korean Journal of Materials Research
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    • v.12 no.4
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    • pp.296-303
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    • 2002
  • For potential application to quantum mechanical devices, nano-composite thin films, consisting of GaAs quantum dots dispersed in SiO$_2$ glass matrix, were fabricated and studied in terms of structural, chemical, and optical properties. In order to form crystalline GaAs quantum dots at room temperature, uniformly dispersed in $SiO_2$matrix, the composite films were made to consist of alternating layers of GaAs and $SiO_2$in the manner of a superlattice using RF magnetron sputter deposition. Among different film samples, nominal thickness of an individual GaAs layer was varied with a total GaAs volume fraction fixed. From images of High Resolution Transmission Electron Microscopy (HRTEM), the formation of GaAs quantum dots on SiO$_2$was shown to depend on GaAs nominal thickness. GaAs deposits were crystalline and GaAs compound-like chemically according to HRTEM and XPS analysis, respectively. From measurement of optical absorbance using a spectrophotometer, absorption edges were determined and compared among composite films of varying GaAs nominal thicknesses. A progressively larger shift of absorption edge was noticed toward a blue wavelength with decreasing GaAs nominal thickness, i.e. quantum dots size. Band gaps of the composite films were also determined from Tauc plots as well as from PL measurements, displaying a linear decrease with increasing GaAs nominal thickness.

Flow Visualization by Light Emission in the Post-chamber of Hybrid Rocket (광도측정에 의한 하이브리드 로켓 후연소실의 유동 가시화)

  • Park, Kyung-su;Choi, Go Eun;Lee, Changjin
    • Journal of the Korean Society for Aeronautical & Space Sciences
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    • v.43 no.8
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    • pp.677-683
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    • 2015
  • Hybrid rocket combustion displays low frequency instability(LFI, 10~30Hz) at a certain condition. Vortex shedding in the post-chamber is suspected to cause the occurrence of LFI. This study focused on the visualization of flow image using light emissions from high temperature combustion gas. Results shows that combustion pressure oscillates at a frequency of about 18 Hz, which is in phase with oscillations of light emission. Since LFI is not a property of thermo-acoustic instability, this result suggested there exists a physical coupling of pressure fluctuations with light emissions proportional to chemical reaction. Also POD analysis shows that dominant symmetric spatial modes in the stable combustion shift suddenly into asymmetric spatial pattern with the appearance of LFI. Especially, the appearance of mode 3 is a typical change of flow dynamics in unstable combustion representing a rotational fluid motions associated with vortex shedding.

Preparation of Al/Al2O3 Multilayer Coatings on NdFeB Permanent Magnet and their Corrosion Characteristics (NdFeB 영구자석에의 Al/Al2O3 다층막 코팅 및 부식 특성)

  • Jeong, J.I.;Yang, J.H.
    • Journal of the Korean institute of surface engineering
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    • v.42 no.2
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    • pp.86-94
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    • 2009
  • Various types of multilayer coatings including Al/$Al_2O_3$ structure have been prepared on Nd-Fe-B permanent magnet to modify the morphology of the coating and to enhance the corrosion resistance of the magnet. Magnetron sputtering has been employed to make the multilayer coatings. $Al_2O_3$sputtering conditions were optimized in reactive sputtering by varying the deposition parameters. The formation of $Al_2O_3$ film was confirmed from the binding energy shift measured by electron spectroscopy for chemical analysis. 3 types of coating structures were designed and prepared by magnetron sputtering. The coating structures consist of (1) single Al coating, (2) modified coatings having oxide or plasma treated layer in the middle of coating structure, and (3) Al/$Al_2O_3$ multilayer coatings. Surface and cross-sectional morphologies showed that Al/$Al_2O_3$ multilayer grew as a layered structure, and that very compact Zone 3 like structure were formed. X-ray diffraction peak showed that the crystal orientations of multilayer coatings were similar to that of the bulk powder pattern. Hardness increased drastically when the Al thickness was around 1im in the Al/$Al_2O_3$ multilayer. From the salt spray test and pressure cooker test, it has been shown that the multilayer coatings showed good corrosion resistance compared to Al single or modified layer coatings.

Magnetic Bias Effects in Field-annealed CoFeSiB Amorphous Ribbons (공기 중에서 자기장 열처리된 CoFeSiB 비정질 리본에서의 자기 바이어스 효과)

  • Cha, Yong-Jun;Jeong, Jong-Ryul;Kim, Cheol-Gi;Kim, Dong-Young;Yoon, Seok-Soo
    • Journal of the Korean Magnetics Society
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    • v.19 no.6
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    • pp.191-196
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    • 2009
  • Magnetic bias phenomena of field-annealed CoFeSiB amorphous ribbons showing asymmetric giant magnetoimpedance was investigated by MOKE method. The specimens removed the crystalline layer at one surface side by chemical etching were prepared and measured magnetization curves by MOKE to investigate the effect of the crystalline layer on magnetization of inner soft amorphous phase. We observed the shift of hysteresis loop, and concluded that the crystalline layer exerts bias field effect on inner soft amorphous phase and the direction of bias filed is opposite to the magnetization direction of surface crystalline layer.

Effect of Selenium Doping on the Performance of Flexible Cu2SnS3(CTS) Thin Film Solar Cells (Mo 유연기판을 이용한 Cu2SnS3 박막 태양전지의 셀레늄 도핑 효과)

  • Lee, In Jae;Jo, Eunae;Jang, Jun Sung;Lee, Byeong Hoon;Lee, Dong Min;Kang, Chang Hyun;Moon, Jong Ha
    • Korean Journal of Materials Research
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    • v.30 no.2
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    • pp.68-73
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    • 2020
  • Due to its favorable optical properties, Cu2SnS3 (CTS) is a promising material for thin film solar cells. Doping, which modifies the absorber properties, is one way to improve the conversion efficiency of CTS solar cells. In this work, CTS solar cells with selenium doping were fabricated on a flexible substrate using sputtering method and the effect of doping on the properties of CTS solar cells was investigated. In XRD analysis, a shift in the CTS peaks can be observed due to the doped selenium. XRF analysis confirmed the different ratios of Cu/Sn and (S+Se)/(Cu+Sn) depending on the amount of selenium doping. Selenium doping can help to lower the chemical potential of sulfur. This effectively reduces the point defects of CTS thin films. Overall improved electrical properties were observed in the CTS solar cell with a small amount of selenium doping, and a notable conversion efficiency of 1.02 % was achieved in the CTS solar cell doped with 1 at% of selenium.

A Study on Compressive Creep Behavior of ACM Rubber using TMA Thermal Analysis (TMA 열분석을 이용한 ACM 고무의 압축크립거동 연구)

  • Ahn, WonSool;Lee, Hyung Seok
    • Elastomers and Composites
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    • v.48 no.2
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    • pp.156-160
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    • 2013
  • A study on compressive creep behavior of ACM rubber for automotive engine gasket was performed using TMA thermal analysis. From the results of isothermal measurements with constant load of 1 N at several different temperatures of 160, 180, 200, and $220^{\circ}C$, compressive creep data at the given temperatures were obtained, and therefrom, shift factor ($a_T$) and master curve at reference temperature of $160^{\circ}C$ were obtained using time-temperature superposition principle (TTSP). $C_1$ and $C_2$ of WLF (Williams-Landel-Ferry) equation were calculated through the WLF plot as -1.107 and 11.571, respectively. From this, life time of ACM rubber at $120^{\circ}C$ was predicted as about 24,000 hrs.

Correlation between Oxygen Related Bonds and Defects Formation in ZnO Thin Films by Using X-ray Diffraction and X-ray Photoelectron Spectroscopy (XRD와 XPS를 사용한 산화아연 박막의 결함형성과 산소연관 결합사이의 상관성)

  • Oh, Teresa
    • Korean Journal of Materials Research
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    • v.23 no.10
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    • pp.580-585
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    • 2013
  • To observe the formation of defects at the interface between an oxide semiconductor and $SiO_2$, ZnO was prepared on $SiO_2$ with various oxygen gas flow rates by RF magnetron sputtering deposition. The crystallinity of ZnO depends on the characteristic of the surface of the substrate. The crystallinity of ZnO on a Si wafer increased due to the activation of ionic interactions after an annealing process, whereas that of ZnO on $SiO_2$ changed due to the various types of defects which had formed as a result of the deposition conditions and the annealing process. To observe the chemical shift to understand of defect deformations at the interface between the ZnO and $SiO_2$, the O 1s electron spectra were convoluted into three sub-peaks by a Gaussian fitting. The O 1s electron spectra consisted of three peaks as metal oxygen (at 530.5 eV), $O^{2-}$ ions in an oxygen-deficient region (at 531.66 eV) and OH bonding (at 532.5 eV). In view of the crystallinity from the peak (103) in the XRD pattern, the metal oxygen increased with a decrease in the crystallinity. However, the low FWHM (full width at half maximum) at the (103) plane caused by the high crystallinity depended on the increment of the oxygen vacancies at 531.66 eV due to the generation of $O^{2-}$ ions in the oxygen-deficient region formed by thermal activation energy.