• Journal of the Korean Crystal Growth and Crystal Technology
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• v.19 no.4
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• pp.172-183
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• 2009

For the effects of the nonlinear temperature profiles and reduced-gravity conditions we conduct a two-dimensional numerical modeling and simulations on the physical vapor transport processes of $Hg_2Cl_2-Xe$ system in the horizontal orientation position. Our results reveal that: (1) A decrease in aspect ratio from 5 to 2 leads to an increasingly nonuniform interfacial distribution and enhances the growth rate by one-order magnitude for normal gravity and linear wall temperature conditions. (2) Increasing the molecular weight of component B, Xenon results in a reduction in the effect of solutal convection. (3) The effect of aspect ratio affects the interfacial growth rates significantly under normal gravity condition rather than under reduced gravitational environments. (4) The transition from the convection-dominated regime to the diffusion-dominated regime ranges arises near at 0.1g$_0$ for operation conditions under consideration in this study.

• Nuclear Engineering and Technology
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• v.56 no.7
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• pp.2881-2892
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• 2024

Annular flow refers to a special type of two-phase flow pattern in which liquid flows as a thin film at the periphery of a pipe, tube, or conduit, and gas with relatively high velocity flows at the center of the flow section. This gas also includes dispersed liquid droplets. The liquid film flow rate continuously changes inside the tube due to two processes-entrainment and deposition. To determine the liquid holdup, pressure drop, the onset of dryout, and heat transfer characteristics in annular flow, it is important to have proper knowledge of flow characteristics. Especially a better understanding of entrainment fraction is important for the heat transfer and safe operation of two-phase flow systems operating in an annular two-phase flow regime. Therefore, the objective of this work is to develop a computational model for the simulation of the annular two-phase flow regime and assess the various existing models for the entrainment rate. In this work, Computational Fluid Dynamics (CFD) in ANSYS FLUENT has been applied to determine annular flow characteristics such as liquid film thickness, film velocity, entrainment rate, deposition rate, and entrainment fraction for various gas-liquid flow conditions in a vertical upward tube. The gas core with droplets was simulated using the Discrete Phase Model (DPM) which is based on the Eulerian-Lagrangian approach. The Eulerian Wall Film (EWF) model was utilized to simulate liquid film on the tube wall. Three different models of Entrainment rate were implemented and assessed through user-defined functions (UDF) in ANSYS. Finally, entrainment for fully developed flow was determined and compared with the experimental data available in the literature. From the simulations, it was obtained that the Bertodano correlation performed best in predicting entrainment fraction and the results were within the ±30 % limit when compared to experimental data.

• Korean Chemical Engineering Research
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• v.47 no.3
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• pp.380-385
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• 2009

The absorption rate of carbon dioxide with 2-amino-2-methyl-1-propanol(AMP) was measured in such non-aqueous solvents as methanol, ethanol, n-propanol, n-butanol, ethylene glycol, propylene glycol, and propylene carbonate, and in water at 298 K and 101.3 kPa using a semi-batch stirred tank with a plane gas-liquid interface. The overall reaction rate constant, obtained under the condition of fast reaction regime, from the measured rate of absorption was used to get the elementary reaction rate constants in complicated reactions represented by reaction mechanism of carbamate formation and the order of overall reaction of $CO_2$ with amine. The correlation between the elementary reaction rate constant and the solubility parameter of the solvent was also presented.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.08a
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• pp.128-128
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• 2010

In this study, we investigated the evolution and reduction of the surface roughness during the high-speed chemical dry thinning process of Si wafers. The direct injection of NO gas into the reactor during the supply of F radicals from NF3 remote plasmas was very effective in increasing the Si thinning rate, due to the NO-induced enhancement of the surface reaction, but resulted in the significant roughening of the thinned Si surface. However, the direct addition of Ar and N2 gas, together with NO gas, decreased the root mean square (RMS) surface roughness of the thinned Si wafer significantly. The process regime for the increasing of the thinning rate and concomitant reduction of the surface roughness was extended at higher Ar gas flow rates. In this way, Si wafer thinning rate as high as $20\;{\mu}m/min$ and very smooth surface roughness was obtained and the mechanical damage of silicon wafer was effectively removed. We also measured die fracture strength of thinned Si wafer in order to understand the effect of chemical dry thinning on removal of mechanical damage generated during mechanical grinding. The die fracture strength of the thinned Si wafers was measured using 3-point bending test and compared. The results indicated that chemical dry thinning with reduced surface roughness and removal of mechanical damage increased the die fracture strength of the thinned Si wafer.

• Applied Chemistry for Engineering
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• v.1 no.1
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• pp.83-90
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• 1990

The semiconducting $(Pb_1\;_xSn_x)_1$ $_yTe_y$, one of the low - temperature thermoelectric materials, has been prepared and its chemical composition and nonstoichiometry has been analyzed. The content of Pb in the specimens was determined by the complexometric back - titration method with EDTA and Pb(II) standard solutions. Te - content was analyzed with the redox titration method. The electrical conductivity and the thermoelectric power have also been measured by the DC 4 - probe and the heat-pulse technique, respectively. All of the specimens showed a nonstoichiometric behavior in their chemical compositions (Te excess), thus gave rise to a p - type semiconducting property, and the nonstoichoimetry became bigger as the Sn - content increased. The thermoelectric power vs. temperature results have been analyzed upon the basis of the Fermi level vs. temperature profiles in the saturation regime. The specimen of x=0.1 evolved a transition from p - to n - type property at about 670K, which has been explained by the fact that the mobility of electrons is bigger than that of holes in the temperature range of the intrinsic regime.

• Transactions of the Korean hydrogen and new energy society
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• v.11 no.3
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• pp.127-136
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• 2000

Molecular dynamics simulations have been carried out to investigate the scattering and penetration properties of hydrogen ions with the normal incident angle to Ni (100) surface. The initial kinetic energies of hydrogen ions range from 100 to 1,600 eV. The simulation results are used to assess the applicabilities of theoretical predictions based on the binary collision approximation, and, in the high kinetic regime, theoretical results for scattering energies were shown to he a good agreement with molecular simulations. The angle dependencies on both scattering and penetration distributions were found in the longitudinal direction, but not in the azimuthal direction except for the high kinetic energy of 1,600 eV.

• Korea-Australia Rheology Journal
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• v.17 no.2
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• pp.35-40
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• 2005

Nanofluid is a novel heat transfer fluid prepared by dispersing nanometer-sized solid particles in traditional heat transfer fluid to increase thermal conductivity and heat transfer performance. In this research we have considered the rheological properties of nanofluids made of CuO particles of 10-30nm in length and ethylene glycol in conjunction with the thermal conductivity enhancement. When examined using TEM, individual CuO particles have the shape of prolate spheroid of the aspect ratio of 3 and most of the particles are under aggregated states even after sonication for a prolonged period. From the rheological property it has been found that the volume fraction at the dilute limit is 0.002, which is much smaller than the value based on the shape and size of individual particles due to aggregation of particles. At the semi-dilute regime, the zero shear viscosity follows the Doi-Edwards theory on rodlike particles. The thermal conductivity measurement shows that substantial enhancement in thermal conductivity with respect to particle concentration is attainable only when particle concentration is below the dilute limit.

• Bulletin of the Korean Chemical Society
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• v.16 no.7
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• pp.613-619
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• 1995

The influence of carrier solutions on particle retention was studied by varying surfactants and ionic strength in flow field-flow fractionation. Experiments were made with five different submicron polystyrene latex standards at three different types of surfactants and seven different ionic strengths. Departures in particle retention from the general theory were observed. At low ionic strength, it is shown that migrating sample zone is clearly lifted away from the ideal equilibrium height and that the repulsive interaction dominates between the particle and the channel wall. As ionic strength increases up to a certain level, particle retention becomes closer to the general theory. Further increase in ionic strength is shown to prolong the retention. An optimum regime of ionic strength is also suggested with the proper choice of surfactants.

• Bulletin of the Korean Chemical Society
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• v.12 no.6
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• pp.682-685
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• 1991

Solvent dependence of the static solution properties of a polymer chain was studied by static light scattering technique for polystyrene in three good solvents, toluene, tetrahydrofuran and $CCl_4$. The molecular parameters such as radius of gyration and second virial coefficients of polystyrene are found to be clearly larger in THF than the other two solvents and they are in the order of tetrahydrofuran > toluene > $CCl_4$. The radius of gyration shows the same order while the difference is smaller. Nontheless, the penetration functions are found to have a comparable value about 0.2, which confirms the universality of the penetration function in high expansion regime over different nature of solvents.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.08a
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• pp.310-311
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• 2011

Dual-frequency (DF) capacitively coupled plasmas (CCP) are used to separately control the mean ion energy and flux at the electrodes [1]. This separate control in capacitively coupled radio frequency discharges is one of the most important issues for various applications of plasma processing. For instance, in the Plasma Enhanced Chemical Vapor Deposition processes such as used for solar cell manufacturing, this separate control is most relevant. It principally allows to increase the ion flux for high deposition rates, while the mean ion energy is kept constant at low values to prevent highly energetic ion bombardment of the substrate to avoid unwanted damage of the surface structure. DF CCP can be analyzed in a fashion similar to single-frequency (SF) driven with effective parameters [2]. It means that DF CCP can be converted into SF CCP with effective parameters such as effective frequency and effective current density. In this study, comparison of DF CCP and its converted effective SF CCP is carried out through particle-in-cell/Monte Carlo (PIC-MCC) simulations. The PIC-MCC simulation shows that DF CCP and its converted effective SF CCP have almost the same plasma characteristics. In DF CCP, the negative resistance arises from the competition of the effective current and the effective frequency [2]. As the high-frequency current increases, the square of the effective frequency increases more than the effective current does. As a result, the effective voltage decreases with the effective current and it leads to an increase of the ion flux and a decrease of the mean ion energy. Because of that, the negative resistance regime can be called the preferable regime for solar cell manufacturing. In this preferable regime, comparison of DF (13.56+100 or 200 MHz) CCP and SF (60 MHz) CCP with the same effective current density is carried out. At the lower effective current density (or at the lower plasma density), the mean ion energy of SF CCP is lower than that of DF CCP. At the higher effective current density (or at the higher plasma density), however, the mean ion energy is lower than that of SF CCP. In this case, using DF CCP is better than SF CCP for solar cell manufacturing processes.