• Proceedings of the Korean Vacuum Society Conference
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• 2013.02a
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• pp.628-628
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• 2013

Graphene, a single layer of graphite, has raised extensive interest in a wide scientific community for its extraordinary thermal, mechanical, electrical and other properties [1,2]. However, because of zero-band gap of graphene, it is difficult to apply for electronic applications. To overcome this problem, chemical doping is one of way to opening grahene bandgap. According to experimental results, by changing doping concentration and doping time, it is possible to control work function of graphene. We can obtain results through raman spectroscopy, UPS, Sheet resistance. Moreover, electronic properties of doped graphene were studied by making field effect transistors. We were able to control the doping concentration, dirac point of graphene and work function of graphene by formng n-type, p-type doping materials. In this research, the chemicals of diazonium salts, viologen, etc. were used for extrinsic doping.

• Journal of the Korean Chemical Society
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• v.33 no.3
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• pp.332-334
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• 1989

• Bulletin of the Korean Chemical Society
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• v.33 no.3
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• pp.763-769
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• 2012

We investigated the width (N) dependence on the magnetization of N-ZSiC NR with electron and hole doping on the basis of systematic DFT calculations. The critical values of the upper and down critical concentration to give the maximum and zero magnetic moment at edge Si/C atoms by electron/hole doping ($x_{up,e}$, $x_{down,e}$, $x_{up,h}$, and $x_{down,h}$) depend on the width of N-ZSiC NR. Moreover, due to $x_{up,e}\;{\neq}\;x_{up,h}$ and $x_{down,e}\;{\neq}\;x_{down,h}$, the electron and hole doping effect are asymmetry, i.e, the critical electron doping value ($x_{down,e}$) is smaller than the critical hole doping value ($x_{down,h}$) and is almost independent of the width of NZSiC NR though the other critical values of the electron and hole doping that influence the magnetization of N-ZSiC NR depend on the width. It was also found that at $x_{down,e}$ or $x_{down,h}$ doping, the N-ZSiC NR turns into unusual non-magnetic metallic state. The magnetic behavior was discussed based on the band structures and projected density of states (PDOS) under the effect of electron/hole doping.

• Korean Chemical Engineering Research
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• v.55 no.2
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• pp.253-257
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• 2017

Graphene is a monolayer carbon material which consists of $sp^2$ bonding between carbon atoms. Its excellent intrinsic properties allow graphene to be used in various research fields. Many researchers believe that graphene is suitable for electronic device materials due to its high electrical conductivity and carrier mobility. Through chemical doping, n- or p-type graphene can be obtained, and consequently graphene-based devices which have more comparable structure to common semiconductor-based devices can be fabricated. In our research, we introduced the dielectrophoresis process to the chemical doping step in order to improve the effect of chemical doping of graphene selectively. Under 10 kHz and $5V_{pp}$ (peak-to-peak voltage), doping was conducted and the Au nanoparticles were effectively formed, as well as aligned along the edges of graphene. Effects of the selective chemical doping on graphene were investigated through Raman spectroscopy and the change of its electrical properties were explored. We proposed the method to enhance the doping effect in local region of a graphene layer.

• Bulletin of the Korean Chemical Society
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• v.31 no.10
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• pp.2809-2812
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• 2010

The Chemical Doping of epitaxial graphene (EG) due to p-tert-butylcalix[4]arene was investigated using high resolution photoemission spectroscopy (HRPES). The measured work function changes verified that increased adsorption of the p-tert-butylcalix[4]arene on EG showed p-type doping characteristics due to charge transfer from the graphene to the p-tert-butylcalix[4]arene through the hydroxyl group. A single oxygen bonding feature associated with the O 1s peak was clearly observed in the core-level spectra, indicating the presence of one equivalent adsorption state.

• Applied Science and Convergence Technology
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• v.24 no.6
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• pp.268-272
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• 2015

We report the systematic study to reduce extrinsic doping in graphene grown by chemical vapor deposition (CVD). To investigate the effect of crystallinity of graphene on the extent of the extrinsic doping, graphene samples with different levels of crystal quality: poly-crystalline and single-crystalline graphene (PCG and SCG), are employed. The graphene suspended in air is almost undoped regardless of its crystallinity, whereas graphene placed on an $SiO_2/Si$ substrate is spontaneously p-doped. The extent of p-doping from the $SiO_2$ substrate in SCG is slightly lower than that in PCG, implying that the defects in graphene play roles in charge transfer. However, after annealing treatment, both PCG and SCG are heavily p-doped due to increased interaction with the underlying substrate. Extrinsic doping dramatically decreases after annealing treatment when PCG and SCG are placed on the top of hexagonal boron nitride (h-BN) substrate, confirming that h-BN is the ideal substrate for reducing extrinsic doping in CVD graphene.

• Proceedings of the Materials Research Society of Korea Conference
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• 1992.05a
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• pp.17-17
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• 1992

The ceramic high transition temperature superconducting materials present many interesting characteristics that will be analysed from two points of view: physical behavior, and chemical aspects. From the first point of view, these materials display an enormous variety of different physical properties. At low doping levels the normal state shows antiferromagnetism and insulating behavior. At intermediate doping levels, an anomalous metallic state appears and, the optimum Tc in the superconducting state is generated. With increasing doping a normal metallic state develops and superconductivity starts to disappear. Many of the physical phenomena that describe the overall behavior when doping levels are changed will be discussed. From the poing of view of the chemical aspects. we well discuss some of the problems involved in the methods of preparation with particular emphasis on defects, crystal structures, critical currrents, and applications in technology.

• Bulletin of the Korean Chemical Society
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• v.34 no.2
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• pp.384-388
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• 2013

Fluorine-doping on the $Li_{1+x}Mn_{1.9-x}Al_{0.1}O_4$ spinel cathode materials is found to alter crystal shape, and enhance initial interfacial reactivity and solid electrolyte interphase (SEI) formation, leading to improved initial coulombic efficiency in the voltage region of 3.3-4.3 V vs. Li/$Li^+$ in the room temperature electrolyte of 1 M $LiPF_6$/EC:EMC. SEM imaging reveals that the facetting on higher surface energy plane of (101) is additionally developed at the edges of an octahedron that is predominantly grown with the most thermodynamically stable (111) plane, which enhances interfacial reactivity. Fluorine-doping also increases the amount of interfacially reactive $Mn^{3+}$ on both bulk and surface for charge neutrality. Enhanced interfacial reactivity by fluorine-doping attributes instant formation of a stable SEI layer and improved initial cyclic efficiency. The data contribute to a basic understanding of the impacts of composition on material properties and cycling behavior of spinel-based cathode materials for lithium-ion batteries.

• Bulletin of the Korean Chemical Society
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• v.31 no.2
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• pp.483-486
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• 2010

• Bulletin of the Korean Chemical Society
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• v.35 no.3
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• pp.895-898
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• 2014

The wavelength dependence of the photoacoustic signal for n-type GaAs semiconductors in the region of the band-gap energies was investigated. The significant changes in the phase and amplitude of the photoacoustic signal near the band-gap absorption wavelengths were observed to occur when the Si-doping densities in GaAs were varied. Particularly, the first derivatives of the photoacoustic phase vs. wavelength graphs were evaluated and fitted with single Gaussian functions. The peak centers and the widths of the Gaussian curves clearly showed linear relationships with the log values of the Si-doping densities in n-type GaAs semiconductors. It is proposed that the wavelength-dependent PA spectroscopy can be used as a simple and nondestructive method for measuring the doping densities in bulk semiconductors.