• 건축사
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• 제5권4호통권20호
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• pp.67-68
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• 1970

• 의료법학
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• 제2권2호
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• pp.320-337
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• 2001

• 한국전기화학회:학술대회논문집
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• 한국전기화학회 2002년도 추계총회 및 학술발표회
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• pp.31-32
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• 2002

• Kyungpook Mathematical Journal
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• 제52권4호
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• pp.433-441
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• 2012

We adapt the concept of shrinking projection method of Takahashi et al. [J. Math. Anal. Appl. 341(2008), 276-286] to the iteration scheme studied by Kim and Lee [Kyungpook Math. J. 48(2008), 685-703] for two relatively weak nonexpansive mappings. By letting one of the two mappings be the identity mapping, we also obtain strong convergence theorems for a single mapping with two types of computational errors. Finally, we improve Kim and Lee's convergence theorem in the sense that the same conclusion still holds without the uniform continuity of mappings as was the case in their result.

• 전자공학회논문지A
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• 제33A권2호
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• pp.131-139
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• 1996

Inthis apper wa analyzed the channel-hot-electron programming characteristics of the single-poly EEPROM with different control gate and drain structures. The single-poly EEPROM uses the p$^{+}$/n$^{+}$-diffusion in the n-well as a control gate instead of the second poly-silicon. The program and erase characteristics of the single-poly EEPROM were verified using the two-dimensional device simulator, MEDICI. The single-poly EEPROM was fabricated using 0.8$\mu$m ASIC CMOS process, and its CHE programming characteristics were measured using HP4155 parameteric analyzer and HP8110 pulse gnerator. Especially we investigated the CHE programming characteristics of the single-poly EEPROM with the p$^{+}$-diffusion or n$^{+}$-diffusion in the n-well as a control gate and the LDD or single-drain structure. The single-poly EEPROM with p$^{+}$-diffusion in the n-well as a control gate and single-drain structure was programmed to about VT$\thickapprox$5V with VDS=6V, VCG=12V(1ms pulse width).th).

• 약학회지
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• 제12권1_2호
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• pp.32-34
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• 1968

Aconitum Uchiyamai NAKAI "geu-neul-dol-che-gi"(Ranunculaceae), is geographically distributed only in Korea. An aconite collected at Mt. Dukwoo, Kangwon-Do flowers with white color in October. The aconite is different from Aconitum Uchiyamai NAKAI from the point of anatomical and morphological views in transplanted and collected aconites. Being a new variety of Aconitum Uchiyamai NAKAI, this aconite is anounced under the name of Aconitum Uchiyamai NAKAI var. albiflorum CHUNG et RIM, "Hin-geu-neul-dol-che-gi" called in Korea. Aconitum Uchiyamai NAKAI var. albiflorum CHUNG et RIM Differt a planta Aconitum Uchiyamai NAKAI per colorem album.

• 한국수학교육학회지시리즈D:수학교육연구
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• 제15권1호
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• pp.81-91
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• 2011

The aim of this study was to explore the grade 1-3 students' geometrical thinking level descriptors based on van Hiele level descriptors. The data were collected through collection of geometric curriculum materials such as indicators and learning standards in Basic Education Core Curriculum and mathematics textbook for grades 1-3. The findings were found that 1) Inconsistency between descriptors appeared on mathematics curriculum and Thai mathematics textbooks. 2) Using topics on textbooks as criterion for exploring 5 of 7 descriptors appeared on Thai mathematics textbook indicated geometrical thinking levels based on van Hiele's model merely level 0 (Visualization) across textbooks for grades 1-3.

• 정보관리학회지
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• 제3권2호
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• pp.109-128
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• 1986

각종 정보 생산량이 날로 증가하고 이를 정보에 대한 이용자 등의 요구 또한 매우 다양해졌기 때문에 수작업 색인에 비해 더욱 신속하고 효율적인 자동 색인의 필요성이 대두 되었다. 본 논문은 한글 문헌에서 체언이 주요어가 될 수 있으며, 체언 다음에는 조사가 온다는 가정하에, 실험 데이터로 선정된 국내 전산화 분야 논문의 표제와 초록에서 형태소 분석 과정을 통하여 색인어들을 추출하였다.

• 한국전기전자재료학회논문지
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• 제16권9호
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• pp.771-774
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• 2003

In this paper, the programming characteristics of the multi-bit devices based on SONOS structure are investigated. Our devices have been fabricated by 0.35 $\mu\textrm{m}$ complementary metal-oxide-semiconductor (CMOS) process with LOCOS isolation. In order to achieve the multi-bit operation per cell, charges must be locally frapped in the nitride layer above the channel near the source-drain junction. Programming method is selected by Channel Hot Electron (CUE) injection which is available for localized trap in nitride film. To demonstrate CHE injection, substrate current (Isub) and one-shot programming curve are investigated. The multi-bit operation which stores two-bit per cell is investigated. Also, Hot Hole(HH) injection for fast erasing is used. The fabricated SONOS devices have ultra-thinner gate dielectrics and then have lower programming voltage, simpler process and better scalability compared to any other multi-bit storage Flash memory. Our programming characteristics are shown to be the most promising for the multi-bit flash memory.

• 한국정밀공학회:학술대회논문집
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• 한국정밀공학회 2012년도 춘계학술대회 논문집
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• pp.501-502
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• 2012