• Title/Summary/Keyword: charging material

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Development of High Voltage and High Energy Density Capacitor for Pulsed Power Application (펄스파워용 고전압 고에너지밀도 커패시터 개발)

  • 이병윤;정진교;이우영;박경엽;이수휘;김영광
    • The Transactions of the Korean Institute of Electrical Engineers B
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    • v.52 no.5
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    • pp.203-210
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    • 2003
  • This paper describes high voltage and high energy density capacitor developed for pulsed power applications. The rated voltage of the developed capacitor is DC 22 [kV], the capacitance is 206 [$\mu$F] and the energy density is about 0.7 [kJ/kg]. Polypropylene film and kraft paper were used as the dielectrics. The ratio of the thickness of each dielectric material which consists of the composite dielectric structure, stacking factor and the termination method were determined by the charging and discharging tests on model capacitors. In terms of energy density, the developed capacitor has higher energy density compared with the products of foreign leading companies. In addition, it has been proved that the life expectancy can be more over 2000 shots through the charging and discharging test. The voltage reversal factor was 20%. This capacitor can be used as numerous discharge applications such as military, medical, industrial fields.

Development of Conductive elastomer Roller for Image Forming High-Quality (고품질 화상형성을 위한 도전성 탄성체 롤러의 개발)

  • Jun, Ho-Ik;Cho, Hyun-Seob
    • Journal of the Korea Academia-Industrial cooperation Society
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    • v.11 no.10
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    • pp.3923-3927
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    • 2010
  • Primary charging roller rotated with contacting surface of OPC drum and take charge OPC drum. Owing to this reason, primary charging roller is made by elasticity substance with electric conduction. Properties of charging and image is changed by class of coating, method of coating and environment. This study developed coating material and coating method to make Image Forming of High- quality.

SILC of Silicon Oxides

  • Kang, C.S.
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2003.07a
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    • pp.428-431
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    • 2003
  • In this paper, the stress induced leakage currents of thin silicon oxides is investigated in the ULSI implementation with nano structure transistors. The stress and transient currents associated with the on and off time of applied voltage were used to measure the distribution of high voltage stress induced traps in thin silicon oxide films. The stress and transient currents were due to the charging and discharging of traps generated by high stress voltage in the silicon oxides. The transient current was caused by the tunnel charging and discharging of the stress generated traps nearby two interfaces. The stress induced leakage current will affect data retention in electrically erasable programmable read only memories. The oxide current for the thickness dependence of stress current, transient current, and stress induced leakage currents has been measured in oxides with thicknesses between $113.4{\AA}$ and $814{\AA}$, which have the gate area 10-3cm2. The stress induced leakage currents will affect data retention and the stress current, transient current is used to estimate to fundamental limitations on oxide thicknesses.

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Fabrication and Estimation of 14/50/50 PLZT Thin Flims by PLD (PLD법에 의한 14/50/50 PLZT박막의 제작과 특성평가)

  • 박정흠;강종윤;장낙원;박용욱;최형욱;마석범
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.14 no.5
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    • pp.417-422
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    • 2001
  • The needs of new materials that substitute Si Oxide capacitor layer in high density DRAM increase. So in this paper, we choose the slim region 14/50/50 PLZT composition and fabricated thin films by PLD and estimated the characteristics for DRAM application. 14/50/50 PLZT thin films have crystallized into perovskite structure in the $600^{\circ}C$ deposition temperature and 200 mTorr Oxygen pressure. In this condition, PLZT thin films had 985 dielectric constant, storage charge density 8.17 $\mu$C/$\textrm{cm}^2$ and charging time 0.20ns. Leakage Current density was less than 10$^{-10}$ A/$\textrm{cm}^2$ until 5V bias voltage.

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A Study of Optimum Electromagnetic Field Analysis and Application of the Electret Sensor Using Computer Simulation (컴퓨터 시뮬레이션에 의한 일렉트렛트 센서의 최적 전계 해석과 응용)

  • 정동회;김상걸;김성렬;김용주;김영천;이준웅
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 1998.06a
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    • pp.435-438
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    • 1998
  • In this paper, Electret is formed to range voltage -5[kV] to -8[kV] by corona charging in PTFE film and sensor is manufactured by method of moments in sensing infra sonic. Charges of charged film are calculated also TSC measurement and induced potential of sensing electrode according to the charges is become aware of computer simulation. Electret Infra Sonic Transducer, which is designed and manufactured according to the potential and electric field simulation in using method of moments, is proved as it is effectively. Because sensitivity that measured under 10[Hz] is that average value of sensitivity rising rate is 6.34 [dB/oct] as average value is $\pm$1 [dB/oct] range -5[kV] to -8[kV] in corona charging film. As a result, it is believed that characteristic of acquired transducer can be application of medical treatment, industry, and animal life researches and the study of noise elimination, what's more, is required.

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In-situ Raman Spectroscopy of Amorphous Hydrous $RuO_2$ Thin Films

  • Hyeonsik Cheong;Jung, Bo-Young;Lee, Se-Hee
    • Journal of the Korean Vacuum Society
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    • v.12 no.S1
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    • pp.49-51
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    • 2003
  • Amorphous hydrous ruthenium oxide thin films have attracted much interest owing to the possibility of using this material in electrochemical supercapacitors. Recently, it was found that this material is also electrochromic: during the charging/discharging cycle, the optical transmittance of the thin film is modulated. The physical and chemical origin of this phenomenon is not fully understood yet. In this work, we performed in-situ Raman spectroscopy measurements on amorphous hydrous ruthenium oxide thin films during the charging/discharging cycles. Unambiguous changes in the Raman spectrum were observed as protons were injected or extracted from the thin film. When the samples were annealed to reduce the water content, there is a consistent trend in the Raman spectrum. The origins of the Raman features and their relation to the electrochromic and/or supercapacitor characteristics is discussed.

Surface Degradation of HTV silicone Rubber used for a Polymeric Insulator by UV Irradiation (고분자 애자 하우징용 HTV 실리콘 고무의 자외선 조사에 따른 표면열화)

  • 연복희;이상용;허창수
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2000.07a
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    • pp.173-176
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    • 2000
  • In this paper, we investigated the surface degradation of HTV silicone rubber used for a polymeric insulator by UV irradiation. To study the surface ageing properties by W irradiation, we used the corona discharge charging and contact angle. Therefore, we observed the change of surface charge retention and decrease of surface hydrophobicity. Also, we discussed the chemical change in the surface range using the analytic equipment such as SEM, ATR-FTIR, ESCA. Therefore, it is found that the scissor of characteristic bonding and the reattachment of oxidant bonding was developed by UV rays radiation. As discussing the corona ischarge charging and the change of contact angle, it is found the effect of UV irradiation and the mechanism of chemical reaction

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A Study On The Control Techniques Of Electra-Static Discharges Using Semiconductor Circuits (반도체 회로를 이용한 정전기제거에 관한 연구)

  • Oh, H.J.;Park, K.J.;Kim, B.I.;Kim, N.O.;kim, H.G.;Kim, D.T.
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2002.08a
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    • pp.19-24
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    • 2002
  • Static electricity is an everyday phenomenon. There can be few of us who have not experienced a static shock after sliding across a car seat. Other static nuisance effects include the cling of some fabrics to the body, the sticking of a plastic document cover, or the attraction of dust to a TV or computer screen. However, static electricity has been a serious industrial problem. The age of electronics brought with it new problems associated with static electricity and electrostatic discharge. And, as electronic devices became faster and smaller, their sensitivity to ESD increased. In this work, We are study on the control technique of electo-static discharges using semiconductor circuits. Our circuits are prevented well to electrostatic shock or damages from triboelectric charging in cars everyday life.

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Transient thermal stress of CFRP propellant tank depending on charging speed of cryogenic fluid

  • Jeon, Seungmin;Kim, Dongmin;Kim, Jungmyung;Choi, Sooyoung;Kim, Seokho
    • Progress in Superconductivity and Cryogenics
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    • v.22 no.4
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    • pp.51-56
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    • 2020
  • In order to increase thrust of the space launch vehicle, liquid oxygen as an oxidizer and kerosene or liquid hydrogen as a fuel are generally used. The oxidizer tank and fuel tanks are manufactured by composite materials such as CFRP (Carbon Fiber Reinforced Plastic) to increase pay load. The thermal stress of the cryogenic propellant tank should be considered because it has large temperature gradient. In this study, to confirm the design integrity of the oxidizer tank of liquid oxygen, a numerical analysis was conducted on the thermal stress and temperature distribution of the tank for various charging speed of the cryogenic fluid from 100 ~ 900 LPM taking into account the evaporation rate of the liquid nitrogen by convective heat transfer outside the tank and boiling heat transfer inside the tank. The thermal stress was also calculated coupled with the temperature distribution of the CFRP tank. Based on the analysis results, the charging speed of the LN2 can majorly affects the charging time and the resultant thermal stress.

Charge Accumulation in Glass under E-beam irradiation (E-beam 조사하에서 유리의 전하 측정)

  • Kim, Dae-Yeol;Choi, Yong-Sung;Hwang, Jong-Sun;Lee, Kyung-Sup
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2008.11a
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    • pp.268-269
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    • 2008
  • Charging of spacecraft occurs in plasma and radiation environment. Especially, we focused on an accident caused by internal charging in a glass material that was used as the cover plate of solar panel array, and tried to measure the charge distribution in glass materials under electron beam irradiation by using a PEA (Pulsed Electro-Acoustic method) system. In the case of a quartz glass (pure $SiO_2$), no charge accumulation was observed either during or after the electron beam irradiation. On the contrary, positive charge accumulation was observed in glass samples containing metal-oxide components. It is found that the polarity of the observed charges depends on the contents of the impurities. To identify which impurity dominates the polarity of the accumulated charge, we measured charge distributions in several glass materials containing various metal-oxide components and calculated the trap energy depths from the charge decay characteristics of all glass samples.

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