• Proceedings of the KIEE Conference
• /
• 2006.07c
• /
• pp.1295-1296
• /
• 2006

수소화된 비정질 실리콘 박막 트랜지스터(a-Si:H TFT)의 이력 현상이 능동형 유기 발광 다이오드(Active-Matrix Organic Light Emitting Diode) 디스플레이 패널을 구동할 경우에, 발생할 수 있는 잔상(Residual Image) 문제를 단위 소자 및 회로에서 실험을 통하여 규명하였다. 게이트 시작 전압을 바꾸어 VGS-ID 특성을 측정할 경우, 게이트 시작 전압이 5V에서 시작한 VGS-ID 곡선이 10V에서 시작한 VGS-ID 곡선에 비해 왼쪽으로 0.15V 이동하였다. 이러한 결과는 게이트 시작 전압의 차이에 의해 발생한 트랩된 전하량(Trapped Charge) 변화로 설명할 수 있다. 또한, 인가하는 게이트 전압 간격을 0.5V에서 0.05V로 감소시켰을 때 전하 디트래핑 비율의 변화(Charge De-trapping Rate)로 인하여, 이력 현상(Hysteresis Phenomenon)으로 인한 단위 소자에서의 문턱전압의 변화가 0.78V에서 0.39V로 감소함을 관찰하였다. 제작된 2-TFT 1-Capacitor의 ANGLED 화소에서 (n-1)번째 프레임에서의 OLED 전류가 (n)번째 프레임에서의 OLED 전류에 35%의 전류오차를 발생시키는 것을 측정 및 분석하였다.

• Nano
• /
• v.13 no.11
• /
• pp.1850129.1-1850129.10
• /
• 2018

To improve the high charge carrier recombination rate and low visible light absorption of {001} facets exposed $TiO_2$ [$TiO_2(001)$] nanosheets, few-layered $MoS_2$ nanoparticles were loaded on the surfaces of $TiO_2(001)$ nanosheets by a simple photodeposition method. The photocatalytic activities towards Rhodamine B (RhB) were investigated. The results showed that the $MoS_2-TiO_2(001)$ nanocomposites exhibited much enhanced photocatalytic activities compared with the pure $TiO_2(001)$ nanosheets. At an optimal Mo/Ti molar ratio of 25%, the $MoS_2-TiO_2(001)$ nanocomposites displayed the highest photocatalytic activity, which took only 30 min to degrade 50 mL of RhB (50 mg/L). The active species in the degradation reaction were determined to be $h^+$ and $^{\bullet}OH$ according to the free radical trapping experiments. The reduced charge carrier recombination rate, enhanced visible light utilization and increased surface areas contributed to the enhanced photocatalytic performances of the 25% $MoS_2-TiO_2(001)$ nanocomposites.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.37 no.1
• /
• pp.112-117
• /
• 2024

The Internet of Things (IoT) device is a key component for Industry 4.0, which is the network in homes, factories, buildings, and infrastructures to monitor and control the systems. To demonstrate the IoT network, batteries are widely utilized as power sources, and the batteries inevitably require repeated replacement due to their limited capacity. Magneto-mechano-electric (MME) generators are one of the candidate to develop self-powered IoT systems since MME generators can harvest electricity from stray alternating current (AC) magnetic fields arising from electric power cables. Herein, we report a magneto-mechano-triboelectric generator enabled by a ferromagnetic-ferroelectric composite. In the triboelectric nylon matrix, a ferromagnetic carbonyl iron powder (CIP) was introduced to induce magnetic force near the AC magnetic field for MME harvesting. Additionally, a ferroelectric ceramic powder was also added to the MME composite material to enhance the charge-trapping capability during triboelectric harvesting. The final ferromagnetic-ferroelectric composite-based MME triboelectric harvester can generate an open-circuit voltage and a short-circuit current of 110 V and 8 μA, respectively, which were enough to turn on a light emitting diode (LED) and charge a capacitor. These results verify the feasibility of the MME triboelectric generator for not only harvesting electricity from an AC magnetic field but also for various self-powered IoT applications.

• Proceedings of the Korean Vacuum Society Conference
• /
• 2016.02a
• /
• pp.261-261
• /
• 2016

플래시 메모리 (flash memory)는 DRAM(dynamic racdom access memory)이나 SRAM(static random access memory)에 비해 소자의 구조가 매우 단순하기 때문에 집적도가 높아서 기기의 소형화가 가능하다는 점과 제조비용이 낮다는 장점을 가지고 있다. 또한, 전원을 차단하면 정보가 사라지는 DRAM이나 SRAM과 달리 전원이 꺼지더라도 저장된 정보가 지워지지 않는다는 특징을 가지고 있어서 ROM(read only memory)과 정보의 입출력이 자유로운 RAM의 장점을 동시에 가지기 때문에 활용도가 크다. 또한, 속도가 빠르고 소비전력이 작아서 USB 드라이브, 디지털 TV, 디지털 캠코더, 디지털 카메라, 휴대전화, 개인용 휴대단말기, 게임기 및 MP3 플레이어 등에 널리 사용되고 있다. 특히, 낸드(NAND)형의 플래시 메모리는 고집적이 가능하며 하드디스크를 대체할 수 있어 고집적 음성이나 화상 등의 저장용으로 많이 쓰이며 일정량의 정보를 저장해두고 작업해야 하는 휴대형 기기에도 적합하며 가격도 노어(NOR)형에 비해 저렴하다는 장점을 가진다. 최근에는 smart watch, wearable device 등과 같은 차세대 디스플레이 소자에 대한 관심이 증가함에 따라 투명하고 유연한 메모리 소자에 대한 연구가 다양하게 진행되고 있으며 유리나 플라스틱과 같은 기판 위에서 투명한 플래시 메모리를 형성하는 기술에 대한 관심이 높아지고 있다. 전하트랩형 (charge trap type) 플래시 메모리는 플로팅 게이트형 플래시 메모리와는 다르게 정보를 절연막 층에 저장하므로 인접 셀간의 간섭이나 소자의 크기를 줄일 수 있기 때문에 투명하고 유연한 메모리 소자에 적용이 가능한 차세대 플래시 메모리로 기대되고 있다. 전하트랩형 플래시메모리는 정보를 저장하기 위하여 tunneling layer, trap layer, blocking layer의 3층으로 이루어진 게이트 절연막을 가진다. 전하트랩 플래시 메모리는 게이트 전압에 따라서 채널의 전자가 tunnel layer를 통해 trap layer에 주입되어 정보를 기억하게 되는데, trap layer에 주입된 전자가 다시 채널로 빠져나가는 charge loss 현상이 큰 문제점으로 지적된다. 따라서 tunnel layer의 막질향상을 위한 다양한 열처리 방법들이 제시되고 있으며, 기존의 CTA (conventional thermal annealing) 방식은 상대적으로 높은 온도와 긴 열처리 시간을 가지고, RTA (rapid thermal annealing) 방식은 매우 높은 열처리 온도를 필요로 하기 때문에 플라스틱, 유리와 같은 다양한 기판에 적용이 어렵다. 따라서 본 연구에서는 기존의 열처리 방식보다 에너지 전달 효율이 높고, 저온공정 및 열처리 시간을 단축시킬 수 있는 마이크로웨이브 열처리(microwave irradiation, MWI)를 도입하였다. Tunneling layer, trap layer, blocking layer를 가지는 MOS capacitor 구조의 전하트랩형 플래시 메모리를 제작하여 CTA, RTA, MWI 처리를 실시한 다음, 전기적 특성을 평가하였다. 그 결과, 마이크로웨이브 열처리를 실시한 메모리 소자는 CTA 처리한 소자와 거의 동등한 정도의 우수한 전기적인 특성을 나타내는 것을 확인하였다. 따라서, MWI를 이용하면 tunnel layer의 막질을 향상시킬 뿐만 아니라, thermal budget을 크게 줄일 수 있어 차세대 투명하고 유연한 메모리 소자 제작에 큰 기여를 할 것으로 예상한다.

• Journal of Korean Ophthalmic Optics Society
• /
• v.3 no.1
• /
• pp.269-277
• /
• 1998

The TSDC(Thermally Stimulated Depolarization Current) measurement were carried out in the temperature range $30{\sim}500^{\circ}C$. We observed the anomalous two peaks that have a thousand times longer relaxation time than that of the space charge. It seems that the origin of the two peak are due to the electron trapping effect and to the adsorption of the vacancies at silver electrode.

• 한국정보디스플레이학회:학술대회논문집
• /
• 2008.10a
• /
• pp.1208-1211
• /
• 2008

We study the amorphous In-Ga-Zn-O thin-film transistors (TFTs) properties under monochromatic illumination ($\lambda=420nm$) with different intensity. TFT off-state drain current ($I_{DS_off}$) was found to increase with the light intensity while field effect mobility ($\mu_{eff}$) is almost unchanged; only small change was observed for sub-threshold swing (S). Due to photo-generated charge trapping, a negative threshold voltage ($V_{th}$) shift is also observed. The photofield-effect analysis suggests a highly efficient UV photocurrent conversion in a-IGZO TFT. Finally, a-IGZO mid-gap density-of-states (DOS) was extracted and is more than an order lower than reported value for a-Si:H, which can explain a good switching properties of the a-IGZO TFTs.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.25 no.6
• /
• pp.409-413
• /
• 2012

In this study, a substrate-bias assisted 2-step pulse programming method is proposed for realizing 4-bit/1-cell operation of the SONOS memory. The programming voltage and time are considerably reduced by this programming method than a gate-bias assisted 2-step pulse programming method and CHEI method. It is confirmed that the difference of 4-states in the threshold voltage is maintained to more than 0.5 V at least for 10-year for the multi-level characteristics.

• Korean Journal of Materials Research
• /
• v.27 no.7
• /
• pp.364-368
• /
• 2017

We performed temperature dependent current-voltage (I-V) measurements to characterize the electrical properties of $Au/Al_2O_3/n-Ge$ metal-insulator-semiconductor (MIS) diodes prepared with and without $H_2O$ prepulse treatment by atomic layer deposition (ALD). By considering the thickness of the $Al_2O_3$ interlayer, the barrier height for the treated sample was found to be 0.61 eV, similar to those of Au/n-Ge Schottky diodes. The thermionic emission (TE) model with barrier inhomogeneity explained the final state of the treated sample well. Compared to the untreated sample, the treated sample was found to have improved diode characteristics for both forward and reverse bias conditions. These results were associated with the reduction of charge trapping and interface states near the $Ge/Al_2O_3$ interface.

• Advances in materials Research
• /
• v.4 no.2
• /
• pp.113-132
• /
• 2015

The phenomena of high-voltage polarization and conductivity in oriented vinylidenefluoride and tetrafluoroethylene copolymer films have been investigated. It was shown that under certain electric fields, injection of carriers from the material of electrodes appears The barrier for holes injection in the copolymer was found to be lower than that for electrons. It results in more effective screening of the external field near the anode than near cathode. Electrones, ejected from cathode, creating negative charge by trapping on the surface. It is shown that the electrons injected from cathodes create a negative homocharge on the copolymer surface and then become captured on the surface shallow traps. Their nature has been studied by the x-ray photoelectron spectroscopy. It was shown that these traps may consist of chemical defects in the form of new functional groups formed by reactions of surface macromolecules with sputtered atoms of aluminum. The asymmetric shape of hysteresis curves was explained by the difference in mobility of injected holes and electrons. These factors caused appearance of "non-closed" hysteresis curves for fluorine-containing polymer ferroelectrics. Hysteresis phenomena observed at low electric fields (below coercive ones) are to associate with the behavior of the domains localized in the ordered regions formed during secondary crystallization of copolymers.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2007.11a
• /
• pp.120-121
• /
• 2007

Nano-floating gate memory (NFGM) devices were fabricated by using the low temperature poly-Si thin films crystallized by ELA and the $In_2O_3$ nano-particles embedded in polyimide layers as charge storage. Memory effect due to the charging effects of $In_2O_3$ nano-particles in polyimide layer was observed from the TFT NFGM. The post-annealing in 3% diluted hydrogen $(H_2/N_2)$ ambient improved the retention characteristics of $In_2O_3$ nano-particles embedded poly-Si TFT NFGM by reducing the interfacial states as well as grain boundary trapping states.