• International Journal of Automotive Technology
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• v.7 no.7
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• pp.785-793
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• 2006

The topic of this study is the control strategy of a mild hybrid electric vehicle (HEV) equipped with a continuously variable transmission (CVT). A brief powertrain and vehicle configuration is introduced followed by the control strategy of the HEV with emphasis on two key parts. One of them is an ideal operating surface (IOS) that operates the CVT powertrain optimally from the viewpoint of the tank-to-wheel efficiency. The other is a charge sustaining energy management to maintain the battery state of charge (SOC) within an appropriate level. The fuel economy simulation results of the HEV over standard driving cycles were compared with those of the baseline vehicle. Depending on the driving cycle, 1.3-20% fuel saving potential is predicted by the mild hybridisation using an integrated starter alternator (ISA). The detailed energy flow analysis shows that the majority of the improvement comes from the idle stop function and the benefits for electrical accessories. Additionally, the differences between the initial and the final SOC are in the range $-1.0{\sim}+3.8%$ in the examined cycle.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.22 no.9
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• pp.728-731
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• 2009

We report numerical simulations to investigate of the dependendce of the on/off current ratio and channel charge distributions in silicon nanowire (SiNW) field-effect transistors (FETs) on the channel width and thicknesses. In order to investigate the transport behavior in devices with different channel geometries, we have performed detailed two-dimensional simulations of SiNWFETs and control FETs with a fixed channel length L of $10\;{\mu}m$, but varying the channel width W from 5 nm to $5\;{\mu}m$, and thickness t from 10 nm to 30 nm. We have show that $Q_{ON}/Q_{OFF}$ drastically decreases (from $^{\sim}2.9{\times}10^4$ to $^{\sim}9.8{\times}10^3$) as the channel thickness increases (from 10 nm to 30 nm). As a result of the simulation using a quantum model, even higher charge density in the bottom of SiNW channel was observed then in the bottom of control channel.

• Proceedings of the KIEE Conference
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• 2005.11a
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• pp.197-200
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• 2005

As Plasma Immersion ion Implantation (PIII) using a conducting grid is very useful to reduce the effect of capacitance and charging in surface modification. If the bias voltage applied to the conducting grid is in the range of hundreds of volts, the effects of surface charge and space charge substantially affect the incident ion energy and ion current to the surface. In this paper, through an 1d and a 2d PIC simulation the time varying formation of the space charge and surface charge is analyzed. Experiment with the optimally designed grid on the basis of the simulation results is conducted, and the results of both cases with grid and without grid are compared. In our work with Poly Urethane(PU), the improvement of adhesion is yielded by increasing surface roughness and decreasing Si component of PU.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2011.10a
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• pp.875-877
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• 2011

This paper introduces a touch screen panel driver using modified charge pump circuit. The touch screen panel driver is composed of an analog circuit part which senses a touch and a digital circuit which analyse the sensed signal. To verify the functions the touch screen panel driver, a mixed-mode circuit was built and simulated using Cadence Spectre. The digital circuits were modeled with Verilog-A in order to interface with the analog circuits and verify the functionalities of the driver with less simulation time. From the simulation results, we can verify the reliable operations of the simple structured touch screen panel driver which does not include an ADC.

• Proceedings of the KIPE Conference
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• 2008.10a
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• pp.13-15
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• 2008

Charging or discharging secondary batteries such as a lithium-ion battery is essential in the stage of production and takes long time over two hours. And the charge/discharge system is operated with high switching frequency over several tens kHz. Therefore, to simulate such a system in the conventional way takes very long time and huge files are produced. Finally, the simulation would be unable with general PC class. In this paper, the lithium-ion battery charge/discharge system is analyzed by using state space averaging method. As a result, the simulation time is reduced dramatically and the charge/- discharge characteristics of the lithium-ion battery can be observed.

• Korean Journal of Air-Conditioning and Refrigeration Engineering
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• v.22 no.10
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• pp.710-718
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• 2010

A numerical study was performed to predict refrigerant charge amount in a mini-channel condenser for a R410A residential air-conditioning system. Multi-channel flat tubes with 12 mini-channels of 1.17 mm average hydraulic diameter for each tube were applied to the condenser. The condenser consisted of 3 passes, and the first, second, and third pass had 44, 19, and 11 tubes, respectively. Each pass was connected by a vertical header. In this study, the condenser was divided into 410 finite volumes, and analyzed by an $\varepsilon$-NTU method. With thermophysical properties and void fraction models for each volume element, the R410A amount distribution and a total charge amount in the condenser were calculated. The predicted total charge amount was compared with the experimentally measured charge amount under a standard ARI A condition. The developed model could predict the charge amount in the mini-channel condenser within prediction errors from -23.9% to -3.0%. Air velocity distribution at the condenser face was considered as non-uniform and uniform by the simulation model, and its results showed that the air velocity distribution could significantly influence the charge amount and vapor phase distribution in the condenser.

• JSTS:Journal of Semiconductor Technology and Science
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• v.13 no.5
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• pp.530-537
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• 2013

An explicit surface potential calculation method of gate-all-around MOSFET (GAAMOSFET) devices which takes into account both interface trap charge and varying doping levels is presented. The results of the method are extensively verified by numerical simulation. Results from the model are used to find qualitative and quantitative effect of interface trap charge on subthreshold slope (SS) of GAAMOSFET devices. Further, design constraints of GAAMOSFET devices with emphasis on the effect of interface trap charge on device SS performance are investigated.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2018.10a
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• pp.514-516
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• 2018

We have investigated the effect of interface trap charge on the characteristics of a monolithic 3D inverter by TCAD simulation. The interface trap charge affects the variation of the threshold voltage and threshold voltage. also The interface trap charge affects the IN/OUT characteristics of the monolithic 3D inverter.

• Journal of Electrical Engineering and Technology
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• v.1 no.3
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• pp.396-405
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• 2006

The visual analysis of buried channel (Be) devices such as buried channel MOSFETs and CCDs (Charge Coupled Devices) is investigated to give better understanding and insight for their electrical behaviours using a 3-dimensional (3-D) numerical simulation. This paper clearly demonstrates the capability of the numerical simulation of 'EVEREST' for characterising the analysis of a depletion mode MOSFET and BC CCD, which is a simulation software package of the semiconductor device. The inverse threshold and punch-through voltages obtained from the simulations showed an excellent agreement with those from the measurement involving errors of within approximately 1.8% and 6%, respectively, leading to the channel implanted doping profile of only approximately $4{\sim}5%$ error. For simulation of a buried channel CCD an advanced adaptive discretising technique was used to provide more accurate analysis for the potential barrier height between two channels and depletion depth of a deep depletion CCD, thereby reducing the CPU running time and computer storage requirements. The simulated result for the depletion depth also showed good agreement with the measurement. Thus, the results obtained from this simulation can be employed as the input data of a circuit simulator.

• Bulletin of the Korean Chemical Society
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• v.33 no.3
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• pp.795-802
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• 2012

Geminate electron-hole recombination in organic solids in the presence of a donor-acceptor heterojunction is studied by computer simulations. We analyze how the charge-pair separation probability in such systems is affected by energetic disorder of the media, anisotropy of charge-carrier mobilities, and other factors. We show that in energetically disordered systems the effect of heterojunction on the charge-pair separation probability is stronger than that in idealized systems without disorder. We also show that a mismatch between electron and hole mobilities reduces the separation probability, although in energetically disordered systems this effect is weaker compared to the case of no energetic disorder. We demonstrate that the most important factor that determines the charge-pair separation probability is the ratio of the sum of electron and hole mobilities to the rate constant of recombination reaction. We also consider systems with mobility anisotropy and calculate the electric field dependence of the charge-pair separation probability for all possible orientations of high-mobility axes in the donor and acceptor phases. We theoretically show that it is possible to increase the charge-pair separation probability by controlling the mobility anisotropy in heterojunction systems and in consequence to achieve higher efficiencies of organic photovoltaic devices.