• Tribology and Lubricants
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• v.26 no.2
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• pp.122-128
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• 2010

Focused Ion Beam (FIB) has been used for site-specific TEM sample preparation and small scale fabrication. Moreover, analysis on the surface microstructure and phase distribution is possible by ion channeling contrast of FIB with high resolution. This paper describes FIB applications and deformed surface structure induced by sliding. The effect of FIB process on the surface damage was explored as well. The sliding experiments were conducted using high purity aluminum and OFHC(Oxygen-Free High Conductivity) copper. The counterpart material was steel. Pin-on-disk, Rotational Barrel Gas Gun and Explosively Driven Friction Tester were used for the sliding experiments in order to investigate the velocity effect on the microstructural change. From the FIB analysis, it is revealed that ion channeling contrast of FIB has better resolution than SEM and the tribolayer is composed of nanocrystalline structures. And the thickness of tribolayer was constant regardless of sliding velocities.

• Journal of the Korean Association of Geographic Information Studies
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• v.12 no.2
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• pp.69-81
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• 2009

Using a computational fluid dynamics (CFD) model, the effects of building complexes constructed under an urban renewal plan on air flows in an urban area were investigated. For this, the geographic information system (GIS) data were used as the input data of the CFD model and four experiments were numerically simulated for different inflow directions (westerly, southerly, easterly, and northerly cases). Before constructing building complexes under the urban renewal plan, wind speed at the pedestrian level was very low around buildings because of decrease in wind speed by the drag effect of the densely distributed low-rise buildings. As the high-rise buildings were constructed and building density decreased by the urban renewal plan, wind speed at the pedestrian level increased compared to that before the urban renewal plan because the drag effect by the buildings decreases and the channeling effect satisfying the mass continuity partially appeared at the spaces among the high-rise buildings. At the upper levels, wind speed partially increased inside the high-rise buildings due to the channeling effect but it remarkably decreased across a vast extent of the downwind regions due to the generation of the recirculation zone and the drag effect of the high-rise buildings.

• Journal of the Korean Institute of Telematics and Electronics D
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• v.36D no.3
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• pp.27-33
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• 1999

We have investigated the ultra-low energy B, P, and As ion implantation using upgraded MDRANGE code to study formation of nanometer junction depths. Even at the ultra-low energies simulated in this paper, it was revealed that ion channeling should be carefully considered. It was estimated that ion channelings have much effect on dopant profiles when B ion implant energies were more than 500 eV, P more than 2 keV and As approximately more than 4 keV. When we compared 2-dimensional dopant profiles of 1 keV B with that of tilted one, 2 keV P with tilt, and 5 keV As with tilt, we could find that most channeling cases occurred not lateral directions but depth directions.

• Proceedings of the Korean Vacuum Society Conference
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• 1998.02a
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• pp.41-41
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• 1998

Rare earth metal films have been used as a buffer layer for growing ferroelectric t thin film or a seed layer for magnetic multilayer. But when it was deposited on s semiconductor substrates for the application of magneto-optic (MO) storage media, it i is difficult to exactly measure magnetic cons떠nts due to shunting current, and so it n needs to grow metal films on insulator substrate to reduce such effect. Recently, it w was reported that ultra-thin Pt layer were epitaxially grown on A12O:J by ion beam s sputtering in 비떠 high vacuum and it can be used as a seed layer for the growth of C Co-contained magnetic multilayer. In this stu$\phi$, Pt thin film were epi떠xially grown on AI2D3 ($\alpha$)OJ) by RF magnetron s sputtering. The crystalline structure was analyzed by transmission electron microscope ( (TEM) and Rutherford Back Scattering (RBS)/Ion Channeling. In TEM study, Pt was b believed to be twinned on AI잉3($\alpha$)01) su$\pi$ace about Pt(ll1) plane.Moreover, RBS c channeling spectra showed that minimum scattering yield of Pt(111)/AI2O:J(1$\alpha$)OJ) was 4 4% and Pt(11J)/AI2D3($\alpha$)OJ) had 3-fold symmetry.

• Geophysics and Geophysical Exploration
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• v.1 no.1
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• pp.71-78
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• 1998

Inversion schemes of 2-D MT survey data generally take enormous computational time and computer memory. In addition, careful attention must be paid in handling MT data, especially in cases of TM mode, inversion results can be seriously distorted because of static effect caused by current channeling across inhomogeneous surface boundaries. There-fore inversion algorithm using the GRRI scheme for TM mode MT data was implemented. This scheme is based on a perturbation analysis with a locally 2-D analysis and local inversions were sequently performed over each divided section without additional forward modelings. The algorithm was applied to several synthetic data for the purpose of verification of its efficiency and applicability. With less computer resources than conventional schemes, it could handle static effect directly by including current channeling across inhomogeneous boundaries. Thus it is expected to be used for an useful tool such as a real-time inversion scheme in the field.

• Journal of the Microelectronics and Packaging Society
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• v.23 no.3
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• pp.69-75
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• 2016

This study investigated the effect of heat treatment conditions not only on the Cr surface crack propagation behaviors but also on the Ni/Cr interfacial reaction characteristics in electroless Ni/electroplated Cr double coating layers on Cu substrate. Clear band layer of Ni-Cr solid solutions were developed at Ni/Cr interface after heat treatment at $750^{\circ}C$ for 6 h. Channeling cracks formed in Cr layer after 1 step heat treatment, that is, heat treatment after Ni/Cr plating, while little channeling cracks formed after 2 step heat treatment, that is, same heat treatments after Ni and Cr plating, respectively, due to residual stress relaxation due to crystallization of Ni layer before Cr plating.

• Journal of the Korean Institute of Telematics and Electronics A
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• v.30A no.12
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• pp.43-50
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• 1993

Three-dimensional simulator for the ion implantation process is developed. The simulator based on an analytical model which would be a choice with high computational efficiency and accuracy. This is an important issue for the simulation of a numerous number of processing steps required in the fabrication of ULSI or GSI. The model can explain scattering and bulk channeling mechanism (1D). It can also explain depth dependent lateral diffusion effect(2D) and mask effect(3D). The model is consist of one-dimensional JPD(Joined Pearson Distribution) function and two-dimensional modified Gaussian functions. Final implanted profiles under typical mask structures such as hole, line and island structure are obtained with varying ion species.

• Journal of Mechanical Science and Technology
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• v.17 no.12
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• pp.2010-2018
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• 2003

Although continuous casting process has highly developed, there still remain many problems to be considered. Specifically, two vortex flows resulting from impingement against narrow walls make a flow field unstable in a mold, and it is directly related to internal and external defects of steel products. To cope with this instability, EMBR (Electromagnetic Brake Ruler) technique has been lately studied for the stability of molten steel flow, and it is revealed that molten steel flow in a mold can be controlled with applied magnetic field. However, it is still difficult to clarify flow pattern in an EMBR caster due to complex correlations among variables such as geometric factors, casting conditions, and the place and the intensity of charged magnetic field. In the present study, flow field in a mold is focused with different conditions of electromagnetic effect. To accurately analyze the case, three dimensional low Reynolds turbulent model and appropriate boundary conditions are chosen. To evaluate the electromagnetic effect in molten steel flow, dimensionless numbers are employed. The results show that the location and the intensity of the applied magnetic field significantly influence the flow pattern. Both impingement and internal flow pattern are changed remarkably with the change of the location of applied magnetic field. It turns out that an insufficient magnetic force yields adverse effect like channeling, and rather lowers the quality of steel product.

• Wind and Structures
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• v.11 no.1
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• pp.1-18
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• 2008

Interference effects in five square tall buildings arranged in an L- or T-shaped pattern are investigated in the wind tunnel. Mean and fluctuating shear forces, overturning moments and torsional moment are measured on each building with a force balance mounted at its base. Results are obtained at two values of clear separation between adjacent buildings, at half and a quarter building breadth. It is found that strong interference effect exists on all member buildings, resulting in significant modifications of wind loads as compared with the isolated single building case. Sheltering effect is observed on wind loads acting along the direction of an arm of the "L" or "T" on the inner buildings. However, increase in these wind loads from the isolated single building case is found on the most upwind edge building in the arm when wind blows at a slight oblique angle to the arm. The corner formed by two arms of buildings results in some wind catchment effect leading to increased wind pressure on windward building faces. Interesting interference phenomena such as negative drag force are reported. Interference effects on wind load fluctuations, load spectra and dynamic building responses are also studied and discussed.

• Journal of the Korean Institute of Telematics and Electronics A
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• v.32A no.6
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• pp.51-58
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• 1995

Major limiting factors in the linear scaling down of the shallow source/drain junction are the boron channeling effect and the Si cosumption phenomenon during silicidation. We can solve these problems by As preamorphization of the predeposited amorphous Si layer. The predeposited amorphous Si layer made the junction depth decrease to nearly the thickness value of the layer and was effectively utilized as the cosumed Si source during Ti silicidation. This method was applied to the actual fabrication of PMOSFET through SES (selectricely etched Si) techology.