• The Journal of Asian Finance, Economics and Business
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• v.7 no.8
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• pp.205-212
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• 2020

This study seeks to examine the main factors, external and internal to the bank, that enhance bank lending. Bank lending is one of the connecting bridges in sustaining society. Internal factors consist of ROA, DPK, and CAR. External factors are economic growth and interest rate of Bank Indonesia. The population of this research consists of traditional commercial banks listed on the IDX over the 2014-2017 period. Samples were chosen by purposive sampling method. This study uses secondary data with 56 samples; data analysis uses multiple linear regression. The findings of the study show that internal factors have a greater impact on increasing bank lending than external factors. The main variable among internal factors that influences increase in bank lending is ROA. DPK is the internal factor with the smallest impact on increasing bank lending. The implication of the study is that determining the bank lending should take more account of CAR, DPK, ROA, BI interest rates, and economic growth in making decisions about the amount of lending. These variables can only have a slight effect on increasing lending, though. Besides, internal factors such as NPL, LDR or non-economic factors also need to be considered in channeling bank credit.

• Journal of the Korean Institute of Telematics and Electronics D
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• v.35D no.12
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• pp.30-40
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• 1998

We have calculated ultra-low energy silicon-self ion implantations and silicon damages through classical molecular dynamics simulation using empirical potentials. We tested whether the recently developed Environment-Dependent Interatomic Potential(EDIP) was suitable for ultra low energy ion implantation simulation, and found that point defects formation energies were in good agreement with other theoretical calculations, but the calculated vacancy migration energy was overestimated. Most of the damages that are produced by collision cascades are concentrated into amorphous-like pockets. Also, We upgraded MDRANGE code for silicon ion implantation process simulation. We simulated ultra-low energy boron ion implantation, 200eV, 500eV, and 1000eV respectively, and calculated boron profiles with silicon substrate temperature and tilt angle. We investigated that below 1000eV, channeling effect must be considered.

• Proceedings of the Materials Research Society of Korea Conference
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• 2009.05a
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• pp.36.2-36.2
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• 2009

In this work, the high power CW Nd:YAG laser has been used for thermal treatment of inkjet printed Ag films-involving eliminating organic additives (dispersant, binder, and organic solvent) of Ag ink and annealing Ag nanoparticles. By optimizing laser parameters, such as laser power and defocusing value, the laser energy can totally be converted to heat energy, which is used to thermal treatment of inkjet printed Ag films. This results in controlling the microstructures and the resistivity of films. We investigated the thermal diffusion mechanisms during laser annealing and the resulting microstructures. The impact of high power laser annealing on microstructures and electrical characteristic of inkjet printed Ag films is compared to those of the films annealed by a conventional furnace annealing. Focused ion beam (FIB) channeling image shows that the laser annealed Ag films have large columnar grains and dense structure (void free), while furnace annealed films have tiny grains and exhibit void formation. Due to these microstructural characteristics of laser annealed films, it has better electrical property (low resistivity) compared to furnace annealed samples.

• Journal of Information Technology Services
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• v.14 no.3
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• pp.131-146
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• 2015

The communications market can be characterized for its overflow of users, oligopoly business structure, 24/7 open service, incomplete sales, and operation of core platform function. These characteristics have lead users to continuously make complaints and suffer inconveniences, and thus the concept of user protection has come to receive attention. This study aims to propose solutions through communication channeling between businesses and users, based on website construction from the viewpoint of user protection. In particular, a research model was developed to display how the information symmetry of websites can be influential on the satisfaction, reliability, and continuous intention for using communication services. Total of 14 hypotheses were set to measure a significant degree of variables corelation and eight hypotheses were accepted finally. The analysis results showed that information symmetry of telecommunication service websites had a positive effect on intention for continuous usage. Through the research results, it is expected that communication service businesses will be able to consider important factors when constructing websites. Furthermore, the results are expected to be utilized as for ensuring users' continued usage of their communication services.

• Journal of Satellite, Information and Communications
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• v.9 no.2
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• pp.12-17
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• 2014

In this paper, modified EDNMOS device with DPS (double polarity source) structure are suggested to realize stable and robust ESD (electrostatic discharge) protection performance of high voltage operating microchip. This DPS structure inserts the P+ diffusion layer on N+ source side, which in intended to block lateral extension of the electron rich region from N+ source side. Based on our simulation results, the inserted P+ diffusion layer effectively prevents the formation of deep electron channeling induced by high electron injection. As a result, our proposed DPS_EDNMOS devices could overcome the double snapback effect of conventional Std_EDNMOS device.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.11 no.5
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• pp.358-364
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• 1998

Retrograde well is a new process for ULSI fabrication. High energy ion implantation has been used for retrograde well formation. In this paper the forming condition for retrograde well using high energy ion implantation is compared with that for conventional well. TW signals for retrograde p-,n-well($900^{\circ}C$),after annealing are similar trends to those of conventional ones($1150^{\circ}C$), however the signals for RTA have the highest value because of small thermal budget. Junction depths of retrograde well are varied from about 1.2 to $3.0\{mu}m$ as for conventional well. The peak concentrations of retrograde well, however, are about 10 times higher in values than those of conventional ones so that they can be used as any types of potential barriers or gettering sites. The critical dose for phosphorus implantation in our experiments is between $3\times10^{13} and 1\times10^{14}/cm^2$. Under the above critical dose, there are many secondary defects near projected range such as dislocation lines and dislocation loops.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.22 no.2
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• pp.128-131
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• 2009

Silicon carbide (SiC) has attracted significant attention for high frequency, high temperature and high power devices due to its superior properties such as the large band gap, high breakdown electric field, high saturation velocity and high thermal conductivity. We performed Al ion implantation processes on n-type 4H-SiC substrate using a SILVACO ATHENA numerical simulator. The ion implantation model used Monte-Carlo method. We simulated the effect of channeling by Al implantation in both 0 off-axis and 8 off-axis n-type 4H-SiC substrate. We have investigated the effect of varying the implantation energies and the corresponding doses on the distribution of Al in 4H-SiC. The controlled implantation energies were 40, 60, 80, 100 and 120 keV and the implantation doses varied from $2{\times}10^{14}$ to $1{\times}10^{15}\;cm^{-2}$. The Al ion distribution was deeper with increasing implantation energy, whereas the doping level increased with increasing dose. The effect of post-implantation annealing on the electrical properties of Al-implanted p-n junction diode were also investigated.

• Journal of Korean Vacuum Science & Technology
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• v.2 no.2
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• pp.107-117
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• 1998

Epitaxial undoped and Sb-doped si films have been grown on Si(001) substrates at temperatures T between 80 and 750$^{\circ}C$ using energetic Si in ultra-high-vacuum Kr+-ion-beam sputter deposition(IBSD). Critical epitaxial thicknesses te, The average thickness of epitaxial layers, in undoped films were found to range from 8nm at Ts=80$^{\circ}C$ to > 1.2 ${\mu}$m at Ts=300$^{\circ}C$ while Sb incorporation probabilities $\sigma$sb varied from unity at Ts 550$^{\circ}C$ to 0.1 at 750$^{\circ}C$. These te and $\sigma$Sb values are approximately one and one-to-three orders of magnitude, respectively, higher than reported results achieved with molecular-beam epitaxy. Plan-view and cross-sectional transmission electron microscopy, high-resolution x-ray diffraction, channeling and axial angular-yield profiles by Rutherford back scattering spectroscopy for epitaxial Si1-x Gex(001) alloy films (0.15$\leq$x$\leq$0.30) demonstrated that the films are of extremely high crystalline quality. critical layer thicknesses hc the film thickness where strain relaxation starts, I these alloys wre found to increase rapidly with decreasing growth temperature. For Si0.70 Ge0.30, hc ranged from 35nm at Ts=550$^{\circ}C$ to 650nm at 350$^{\circ}C$ compared to an equilibrium value of 8nm.

• Cross-Cultural Studies
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• v.32
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• pp.29-61
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• 2013

When turning to determining a subject position for the digital age, one may look beyond the invention of its technologies and instead begin with the development of its aesthetic of networked communities, nodal expression, and collaborative identity. Virginia Woolf's The Waves demonstrates this aesthetic in both form and content. In this paper, I will examine the role of collaboration in the form of interdisciplinary composition, arguing that Woolf's use of musical form and dramatic monologue and dialogue structurally secure an investment in collaborative models of expression. Digital texts taut their inherent multimodality, but such compositions are also evident in pre-digital texts. In addition, I will decipher the subject position Woolf puts forward in The Waves by looking closely at how the characters determine their own identity and existence when they are alone, when they interact with one individual, and when they congregate as a group. These are exemplified more specifically in the representations of Rhoda and Bernard as equally refusing to collaborate between a self-defined identity and a group defined identity; Bernard's channeling of Lord Byron while writing a love letter; and Woolf's use of the red carnation as a repeated image of the intertwined nature of the characters' collaborative identity and mutual dependence on one another.

• Wind and Structures
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• v.11 no.1
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• pp.1-18
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• 2008

Interference effects in five square tall buildings arranged in an L- or T-shaped pattern are investigated in the wind tunnel. Mean and fluctuating shear forces, overturning moments and torsional moment are measured on each building with a force balance mounted at its base. Results are obtained at two values of clear separation between adjacent buildings, at half and a quarter building breadth. It is found that strong interference effect exists on all member buildings, resulting in significant modifications of wind loads as compared with the isolated single building case. Sheltering effect is observed on wind loads acting along the direction of an arm of the "L" or "T" on the inner buildings. However, increase in these wind loads from the isolated single building case is found on the most upwind edge building in the arm when wind blows at a slight oblique angle to the arm. The corner formed by two arms of buildings results in some wind catchment effect leading to increased wind pressure on windward building faces. Interesting interference phenomena such as negative drag force are reported. Interference effects on wind load fluctuations, load spectra and dynamic building responses are also studied and discussed.