• 동력기계공학회지
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• 제13권2호
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• pp.36-41
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• 2009

An experimental investigation was conducted to examine the fluid flow resistance in the rectangular channel with two inclined wire screen baffles. Two different types of wire screens; dutch weave and plain weave, were used as baffle devices in this experiment. Three kinds of baffles with different mesh specifications were made up of dutch type and four different kinds of baffles were made up of plain weave type. The stainless steel wire screen baffles were mounted on the bottom wall with varied angle inclination. Reynolds numbers were varied from 23,000 to 57,000. Results show that the mesh number of baffles plays an important role on friction factor behaviour. It is found that the baffle with the most number of meshes (type SA) has the highest fluid flow resistance.

• 한국해양공학회지
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• 제20권1호
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• pp.32-36
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• 2006

The initial hull form of a 100 tan, 45 knot class high-speed craft is newly developed. The resistance performances are investigated using a model test at high speed in a circulating water channel. The effect of the initial trim is studied together. Wave patterns are observed to clarify the relationship between the resistance performance and the wave characteristics. It can be found that the initial trim plays a role in increasing the resistance performance above a certain velocity.

• 한국해양공학회지
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• 제26권6호
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• pp.14-18
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• 2012

A 30ft class aluminum leisure boat is newly developed and the resistance performances are investigated by a model test at a high-speed circulating water channel. The effect of a fin attached to the side of the hull is studied at two different displacements. Wave patterns are observed to make clear the relationship between the resistance performance and wave characteristics. It can be found that a chine position at the draft line can have a strong effect on the resistance performance around a certain velocity range.

• Journal of Microbiology and Biotechnology
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• 제33권7호
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• pp.857-863
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• 2023

Pathogenic bacteria that colonize the human intestinal tract have evolved strategies to overcome acidic conditions when they pass through the gastrointestinal tract. Amino acid-mediated acid resistance systems are effective survival strategies in a stomach that is full of amino acid substrate. The amino acid antiporter, amino acid decarboxylase, and ClC chloride antiporter are all engaged in these systems, and each one plays a role in protecting against or adapting to the acidic environment. The ClC chloride antiporter, a member of the ClC channel family, eliminates negatively charged intracellular chloride ions to avoid inner membrane hyperpolarization as an electrical shunt of the acid resistance system. In this review, we will discuss the structure and function of the prokaryotic ClC chloride antiporter of amino acid-mediated acid resistance system.

• 대한지리학회지
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• 제42권1호
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• pp.27-40
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• 2007

하천은 암석의 저항력, 구조 운동, 퇴적물, 유량 등에 의해 다양한 형태로 발전한다 본 연구는 이러한 요인 중에서도, 암석의 침식 저항력에 초점을 두었다. 상 하류간 기반암의 차이가 뚜렷한 어룡천, 흥정천, 두학천, 대화천, 남천천, 구룡천의 6개 하천을 대상으로, GIS를 이용하여, 유역분지 상 하류의 평면 및 종단면 특성을 분석하였다. 화강암 유역은 완만한 경사, 낮은 요형도, 넓은 하곡 면적을 이루며, 편마암 유역은 급한 경사, 높은 요형도, 좁은 하곡 면적을 나타내며, 퇴적암 유역은 본류 경사도와 기복량은 크지만, 나머지는 하천별로 차이가 있다. 여러 가지 형태적 특성 중 상 하류 암석간의 차이가 분명한 본류의 경사, 본류의 요형도, 하계밀도, 하곡의 면적비, 유역의 평균 경사, 유역의 평균 기복을 대상으로, 그 값을 지수화하여, 상 하류 암석의 침식 저항력을 판단하였다. 그 결과, 편마암으로 이루어진 하천의 상류는 침식에 대한 저항력이 높으며, 퇴적암은 상 하류에 관계없이 중간 정도의 저항력을 나타내고, 화강암은 퇴적암과 접한 상류의 경우를 제외하면, 대체로 침식 저항력이 낮다.

• Journal of Semiconductor Engineering
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• 제3권2호
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• pp.161-167
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• 2022

Electrical characteristics of LDMOS power device with LDD(Lightly Doped Drain) structure is studied with variation of the region of channel and LDD. The channel in LDMOSFET encloses a junction-type source and is believed to be an important parameter for determining the circuit operation of CMOS inverter. Two-dimensional TCAD MEDICI simulation is used to study hot-carrier effect, on-resistance Ron, breakdown voltage, and transient switching characteristic. The voltage-transfer characteristics and on-off switching properties are studied as a function of the channel length and doping levels. The digital logic levels of the output and input voltages are analyzed from the transfer curves and circuit operation. Study indicates that drain current significantly depends on the channel length rather than the LDD region, while the switching transient time is almost independent of the channel length. The high and low logic levels of the input voltage showed a strong dependency on the channel length, while the lateral substrate resistance from a latch-up path in the CMOS inverter was comparable to that of a typical CMOS inverter with a guard ring.

• 한국환경복원기술학회지
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• 제7권6호
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• pp.61-74
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• 2004

Hydraulic engineers and scientists working on river restoration recognize the need for a deeper understanding of natural streams as a complex and dynamic system, which involves not only abiotic elements(flow, sediments) but also biotic components. From this point of view, the role played by riverine vegetation dynamics and flow conditions becomes essential. Hydro-mechanic interaction between flow and flexible plants covering a river bed is studied in this paper and some previous works are discussed. Measurements of turbulence and flow resistance in vegetated open channel were performed using rigid and flexible tube. Measuring detailed turbulent velocity profiles within and above submerged and flexible stems allowed to distinguish different turbulent regimes. Some interesting relationships were obtained between the velocity field and the deflected height of the plants, such as a reduced drag coefficient in the flexible stems. Turbulent intensities and Reynolds stresses were measured showing two different regions : above and inside the vegetation domain. In flexible vegetated open channel, the maximum values of turbulent intensities and Reynolds stresses appear above the top of canopy. Method to predict a flow resistance in flexible vegetated open channel is developed by modifying an analytical model proposed by Klopstra et al. (1997). Calculated velocity profiles and roughness values correspond well with flume experiments. These confirm the applicability of the presented model for open channel with flexible vegetation. The new method will be verified in the real vegetated conditions in the near future. After these verifications, the new method should be applied for nature rehabilitation projects such as river restorations.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2013년도 제44회 동계 정기학술대회 초록집
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• pp.543-543
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• 2013

Thin-film transistors (TFTs) based on oxide semiconductors have been regarded as promising alternatives for conventional amorphous and polycrystalline silicon TFTs. Oxide TFTs have several advantages, such as low temperature processing, transparency and high field-effect mobility. Lots of oxide semiconductors for example ZnO, SnO2, In2O3, InZnO, ZnSnO, and InGaZnO etc. have been researched. Particularly, zinc-tin oxide (ZTO) is suitable for channel layer of oxide TFTs having a high mobility that Sn in ZTO can improve the carrier transport by overlapping orbital. However, some issues related to the ZTO TFT electrical performance still remain to be resolved, such as obtaining good electrical contact between source/drain (S/D) electrodes and active channel layer. In this study, the bottom-gate type ZTO TFTs with staggered structure were prepared. Thin films of ZTO (40 nm thick) were deposited by DC magnetron sputtering and performed at room temperature in an Ar atmosphere with an oxygen partial pressure of 10%. After annealing the thin films of ZTO at $400^{\circ}C$ or an hour, Cu, Mo, ITO and Ti electrodes were used for the S/D electrodes. Cu, Mo, ITO and Ti (200 nm thick) were also deposited by DC magnetron sputtering at room temperature. The channel layer and S/D electrodes were defined using a lift-off process which resulted in a fixed width W of 100 ${\mu}m$ and channel length L varied from 10 to 50 ${\mu}m$. The TFT source/drain series resistance, the intrinsic mobility (${\mu}i$), and intrinsic threshold voltage (Vi) were extracted by transmission line method (TLM) using a series of TFTs with different channel lengths. And the performances of ZTO TFTs were measured by using HP 4145B semiconductor analyzer. The results showed that the Cu S/D electrodes had a high intrinsic field effect mobility and a low effective contact resistance compared to other electrodes such as Mo, ITO and Ti.

• 융합정보논문지
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• 제11권7호
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• pp.104-110
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• 2021

본 핀 채널 전계 효과 트랜지스터에서 낮은 소스/드레인 직렬 저항을 위한 새로운 선택적 산화 방식을 제안하였다. 이 방법을 이용하면, gate-all-around 구조와 점진적으로 증가되는 형태의 소스/드레인 확장영역을 갖는 핀 채널 MOSFET를 얻을 수 있다. 제안된 트랜지스터는 비교 소자에 비해 70% 이상의 소스/드레인 직렬 저항의 감소를 얻을 수 있다. 또한, 제안된 소자는 단채널 효과를 억제하면서도 높은 구동 전류와 전달컨덕턴스 특징을 보인다. 제작된 소자의 포화전류, 최대 선형 전달컨덕턴스, 최대 포화 전달컨덕턴스, subthreshold swing, 및 DIBL은 각각 305 ㎂/㎛, 0.33 V, 13.5 𝜇S, 76.4 𝜇S, 78 mV/dec, 62 mV/V의 값을 갖는다.

• 전자공학회논문지A
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• 제33A권7호
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• pp.176-184
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• 1996

To overcome the drawbacks of conventional LDMOSFETs, we propose RESURF EDMOSFETs which can be adapted in varous circuit applications, be driven without charge pumping circuity and thowe threshold voltage can be adjusted. The devices have the diffused drift region formed by a high tmperature process before the gate oxidaton. After the polysilicon gate electrode formation, a fraction of the drift region around the gate edge is opened for supplemental self-aligned ion implantation to obtain self-aligned drift region. This leads to a shorter gate length and desirable drift region junction contour under the gate edge for minimum specific-on-resistance. In additon, a and maximize the breakdown voltage. Also, by biasing the metal field plate, we can reduce the specific-on-resistance further. The devices are optimized by using the TSUPREM-4 process simulator and the MEDICI device simulator. The optimized devices have the breakdwon voltage and the specific-on-resistance of 101.5V and 1.14m${\Omega}{\cdot}cm^{2}$, respectively for n-channel RESURF EDMOSFET, and 98V and 2.75m.ohm..cm$^{2}$ respectively for p-channel RESURF EDMOSFET. To check the validity of the simulations, we fabricated n-channel EDMOSFETs and confirmed the measured breakdown voltage of 97V and the specific-on-resistance of 1.28m${\Omega}{\cdot}cm^{2}$. These results are superior to those of any other reported power devices for smart power IC applications.