• 한국통신학회논문지
• /
• 제17권11호
• /
• pp.1290-1298
• /
• 1992

본 논문은 fitting 파라미터를 배제하고 2차원적 Poisson 방정식을 도출해서 short-channel MOSFET의 model 식을 완전히 해석적으로 성립시켰다. 이로 인해 포화영역, 문턱전압, 강반전에 대한 것이 동시에 표현되는 정확한 드레인 전류가 유도되었다. 더욱이 이 model은 short-channel과 body효과, DIBL효과, 그리고 carrier운동에 대한 것도 설명할 수 있으며 온도와 $n^+$접합, 산화층에 관련되는 문턱전압도 표현할 수 있었다.

• Journal of Communications and Networks
• /
• 제15권2호
• /
• pp.222-227
• /
• 2013

This paper presents an analytical framework for dynamic spectrum allocation in cognitive radio networks. We propose a distributed queuing based Markovian model each for single channel and multiple channels access for a contending user. Knowledge about spectrum mobility is one of the most challenging problems in both these setups. To solve this, we consider probabilistic channel availability in case of licensed channel detection for single channel allocation, while variable data rates are considered using channel aggregation technique in the multiple channel access model. These models are designed for a centralized architecture to enable dynamic spectrum allocation and are compared on the basis of access latency and service duration.

• 한국진공학회:학술대회논문집
• /
• 한국진공학회 2009년도 제38회 동계학술대회 초록집
• /
• pp.430-430
• /
• 2010

MICC 방법으로 제작된 TFT는 large grain과 그에 따른 grain boundary의 감소로 인하여여, 소자의 전기적 특성을 좋게 할 수 있다. 본 연구에서는 bi-layer channel의 large grain size TFT를 제작하여 소자의 전기적 특성을 비교하였다. Channel의 width / length의 크기는 각 각의 경우 $7/5{\times}2$, $10/5{\times}2$, $15/5{\times}2$ (${\mu}m$)로 하였다. 소자의 성능 측정 결과 Field-effect mobility의 경우에는 channel width가 증가할 수록 감소하는 경향성을 나타내었으며, Threshold voltage의 경우에는 조금 감소하는 경향성은 있었으나 변화의 폭이 매우 작았다. Output characteristics 의 경우에는 모든 set에서 좋은 saturation 특성을 보였다. 이것은 current croding이 없었다는 것을 의미하는데, 큰 grain size로 인한 효과로 해석 할 수 있다. 본 연구에서는 bi-layer channel에서 corner effect에 중점을 두어 소자의 전기적 특성 변화에 대하여 논하였다.

• 한국진공학회:학술대회논문집
• /
• 한국진공학회 2016년도 제50회 동계 정기학술대회 초록집
• /
• pp.302.1-302.1
• /
• 2016

Solution-processed amorphous metal-oxide thin-film transistors (TFTs) are considered as promising candidates for the upcoming transparent and flexible electronics due to their transparent property, good performance uniformity and possibility to fabricate at a low-temperature. In addition, solution processing metal oxide TFTs may allow non-vacuum fabrication of flexible electronic which can be more utilizable for easy and low-cost fabrication. Recently, for high-mobility oxide TFTs, multi-layered oxide channel devices have been introduced such as superlattice channel structure and heterojunction structure. However, only a few studies have been mentioned on the bias illumination stress in the multi- layered oxide TFTs. Therefore, in this research, we investigated the effects of bias illumination stress in solution-processed bilayer oxide TFTs which are fabricated by the deep ultraviolet photochemical activation process. For studying the electrical and stability characteristics, we implemented positive bias stress (PBS) and negative bias illumination stress (NBIS). Also, we studied the electrical properties such as field-effect mobility, threshold voltage ($V_T$) and subthreshold slop (SS) to understand effects of the bilayer channel structure.

• 전자공학회논문지S
• /
• 제34S권4호
• /
• pp.1-11
• /
• 1997

In this paper, modeling of the communication channel occupancy characteristics at the base station in the wide area radio trunking syste has been performed. Using the results, mathematical analysis for the switching capacity at the network switch has also been done. Specificatlly, we propose a G/M/m queueing model for the single service area modeling, and analyze changes in call blockingprobabilities accoridng to changes in the burstness characteristics of group paging calls. As a result, we have observe dthat the channel occupancy variations become larger as the burstness characteristics become more apparent, to make the call blocking probability higher. Next, based on the single service area analysis, we have anayzed mathematically the average switching capacity required to serve mobile subscribers for a wide area radio trunking sytem, where multiple switching port assignments are required when the people in the same group are distributed over several base stations. Accordingly, we have observed that the average and the variance of switching channel occupancy are closely related to the mobility characteristics of subscribers, and that we need a netowrk switch having bigger capacity as subscribers show wider distribution. Especially, with the call dropping probability within 0.2%, a switch having about 5 to 6 times bigger can be required, compared with the one when the mobility of subscribers is mostly restricte dto a single service area.

• KSII Transactions on Internet and Information Systems (TIIS)
• /
• 제8권4호
• /
• pp.1324-1343
• /
• 2014

In recent years, the problem of spectrum mobility in Cognitive Radio (CR) Networks has been widely investigated. In order to utilize spectrum resources completely, many spectrum handoff techniques based on game theory have been proposed, but most studies only concern that users how to achieve better payoffs, without much attention to the diverse needs of users. In this paper, we propose a new channel-switching model based on game theory, using a prioritized approach to meet the diverse needs of users in two different modes (CQ and PS). At the same time, this paper proposes some acceleration techniques to reach the Nash equilibrium more efficiently. We evaluate the performance of the proposed schemes depending on priority using real channel availability measurements, and conclude that the channel quality function (CQ) mode provide better service for priority user but the plan-sorting (PS) mode can be more suitable in multiple priority users exist scene.

• 한국정보디스플레이학회:학술대회논문집
• /
• 한국정보디스플레이학회 2007년도 7th International Meeting on Information Display 제7권1호
• /
• pp.145-148
• /
• 2007

The authors report on the fabrication of thin film transistors (TFTs) that use amorphous indium-gallium-zinc oxide (a-IGZO) channel and have the channel length (L) and width (W) patterned by dry etching. To prevent the plasma damage of active channel, a 100-nm-thckness $SiO_{x}$ by PECVD was adopted as an etch-stopper structure. IGZO TFT (W/L=10/50${\mu}m$) fabricated on glass exhibited the high performance mobility of $35.8\;cm^2/Vs$, a subthreshold gate voltage swing of $0.59V/dec$, and $I_{on/off}$ of $4.9{\times}10^6$. In addition, 4.1” transparent QCIF active-matrix organic light-emitting diode display were successfully fabricated, which was driven by a-IGZO TFTs.

• 대한전기학회:학술대회논문집
• /
• 대한전기학회 2006년도 추계학술대회 논문집 전기물성,응용부문
• /
• pp.34-35
• /
• 2006

Transparent ZnO thin film transistor (TFT) is fabricated on the glass substrates. The device consists of a high mobility intrinsic ZnO as a semiconductor active channel, Ga doped ZnO (GZO) as an electrode, $HfO_2$ as a gate insulator. GZO and $HfO_2$ layers are prepared by using a pulsed laser deposition and intrinsic ZnO layers are fabricated by using an rf-magnetron sputtering, respectively. The transparent TFT is highly transparent (> 87 %) and exhibits n-channel, enhancement mode behavior with a field-effect mobility as large as $11.7\;cm^2/Vs$ and a drain current on-to-off ratio of about $10^5$.

• 대한전자공학회:학술대회논문집
• /
• 대한전자공학회 2001년도 하계종합학술대회 논문집(1)
• /
• pp.293-296
• /
• 2001

In this paper, we investigate two soft handover algorithms used in the different mobile communication system. These different systems are IS-95 system and 3GPP system. The performances of two different soft handover are compared under similar conditions in terms of propagation, environment and mobility behavior. For performance comparison of soft handover, we model cell environment, radio channel and mobility. With these models the computer simulation are performed and the result of computer simulation are reported.

• EDISON SW 활용 경진대회 논문집
• /
• 제2회(2013년)
• /
• pp.210-213
• /
• 2013

실리콘 나노선 전계 효과 트랜지스터(Field Effect Transisor: FET)의 특성을 시뮬레이션을 통해 연구하였다. 일반적인 트랜스컨덕턴스(transconductance) 값을 이용하여 소자의 전계 효과 이동도(field effect mobility)를 추출했고, Y-function 방법을 이용하여 저전계 이동도(low field mobility)와 문턱전압(threshold voltage)를 구했다. 채널길이가 10nm로 매우 짧을 때와 100nm의 일반적인 길이 일 때의 전하 이동도 특성을 비교하여 Si 나노선 FET의 쇼트 채널 효과(short channel effect)를 보았다.