• Journal of Information Display
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• v.13 no.2
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• pp.61-66
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• 2012

The double-layered Ti/Si barrier metal is demonstrated for the source/drain Cu interconnections in oxide semiconductor thin-film transistors (TFTs). The transmission electromicroscopy and ion mass spectroscopy analyses revealed that the double-layered barrier structure suppresses the interfacial reaction and the interdiffusion at the interface after thermal annealing at $350^{\circ}C$. The underlying Si layer was found to be very useful for the etch stopper during wet etching for the Cu/Ti layers. The oxide TFTs with a double-layered Ti/Si barrier metal possess excellent TFT characteristics. It is concluded that the present barrier structure facilitates the back-channel-etch-type TFT process in the mass production line, where the four- or five-mask process is used.

• Transactions on Electrical and Electronic Materials
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• v.17 no.3
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• pp.143-145
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• 2016

In order to find suitable source and drain (S/D) electrodes for amorphous InGaZnO thin film transistors (a-IGZO TFTs), the specific contact resistance of interface between the channel layers and various S/D electrodes, such as Ti/Au, a-IZO and multilayer of a-IGZO/Ag/a-IGZO, was investigated using the transmission line model. The a-IGZO TFTs with a-IGZO/Ag/a-IGZO of S/D electrodes had good performance and low contact resistance due to the homo-junction with channel layer. The stability was measured with different electrodes by a positive bias stress test. The result shows the a-IGZO TFTs with a-IGZO/Ag/a-IGZO electrodes were more stable than other devices.

• Transactions of the Korean Society of Mechanical Engineers B
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• v.26 no.8
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• pp.1088-1094
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• 2002

A channel flow with a high Reynolds number but coarse grids is numerically studied to investigate the prediction possibility of its turbulence which is three-dimensional and time-dependent. In the present paper, a Reynolds-Averaged Navier-Stokes (RANS) model, a Large Eddy Simulation (LES) and a Navier-Stokes equation with no model are tested with a new approach of hybrid RANS/LES, which reduces to RANS model in the boundary layers and at separation, and to Smagorinsky-like LES downstream of separation, and then compared with each other. It is found that the simulations of hybrid RANS/LES method sustain turbulence like those of LES and with no model, and the results are stable and fairly accurate. This indicates strongly that gradual improvements could lead to a simple, stable, and accurate approach to predict turbulence phenomena of wall-bounded flow.

• Proceedings of the KSME Conference
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• 2004.11a
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• pp.1528-1533
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• 2004

A numerical investigation is made of transient evolutionary prcocess of electroosmotic flow in a two-dimensional microchannel connected to a reservoir. The channel height is very small so that two electric double layers forming on the charged surfaces are overlapped. Transient transports of ions in the electrolyte solution are computed by integrating the Nernst-Planck equation together with the Poisson equation for electric potential. The numerical results illustrate that there are two distinct transient phases. The physical mechanisms and relevant time scales for the transient evolution are described.

• Proceedings of the Korean Society for Technology of Plasticity Conference
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• 2003.05a
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• pp.96-98
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• 2003

The evolution of texture and microstructure during continuous confined strip shearing (CCSS) in aluminum 3003 alloy sheets was investigated. The tools of CCSS based on the equal channel angular pressing (ECAP) were designed to provide a constant shear deformation of the order of 0.5 per pass while preserving the original sheet shape. FEM results indicated that the shear formation is not homogeneous throughout the sample thickness, in particular at the surface layers. A randomization of textures took place during the CCSS deformation. Observations by TEM and EBSD revealed the formation of sub-micrometer sized grains after CCSS.

• Transactions of Materials Processing
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• v.13 no.4
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• pp.382-387
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• 2004

The continuous confined strip shearing (CCSS) based on the equal channel angular pressing (ECAP) was modeled by means of a rigid-plastic two-dimensional finite element method (FEM). Parallel to the simulations, samples of AA 1050 sheets were experimentally deformed by CCSS. The CCSS deformation led to the formation of through thickness texture gradients comprising a strong shear texture in the sheet center and weak shear textures in the sheet surfaces. FEM analysis revealed variations in the strain component $\varepsilon_13$ along the sample thickness direction, which gave rise to the evolution of different textures. A high friction between the sample and die surface was responsible for lowering intensities of the shear texture components in thickness layers close to the surfaces.

• Journal of Information Display
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• v.12 no.4
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• pp.199-203
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• 2011

Reported herein is the film morphology control of inkjet-printed 6,13-bis(triisopropylsilylethynyl) pentacene (TIPS-pentacene) organic thin-film transistors for the improvement of their performance and of the device-to-device uniformity. The morphology of the inkjetted TIPS-pentacene films was significantly influenced by the bank geometry such as the bank shapes and confinement area for the channel region. A specific confinement size led to the formation of uniform TIPS-pentacene channel layers and better electrical properties, which suggests that the ink volume and the solid concentration of the organic-semiconductor solutions should be considered in designing the bank geometry.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.25 no.9
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• pp.677-680
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• 2012

The dependency of annealing temperature on the electrical performances in amorphous silicon-zinc-tin-oxide thin film transistors (SZTO-TFT) has been investigated. The SZTO channel layers were prepared by using radio frequency (RF) magnetron sputtering method with different annealing treatment. The field effect mobility (${\mu}_{FE}$) increased and threshold voltage ($V_{th}$) shifted to negative direction with increasing annealing temperature. As a result, oxygen vacancies generated in SZTO channel layer with increasing annealing temperature resulted in negative shift in $V_{th}$ and increase in on-current.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.25 no.8
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• pp.580-583
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• 2012

The dependency of processing pressure on the electrical performances in amorphous silicon-zinc-tin-oxide thin film transistors (SZTO-TFT) has been investigated. The SZTO channel layers were deposited by using radio frequency (RF) magnetron sputtering method with different partial pressure. The field effect mobility (${\mu}_{FE}$) increased and threshold voltage ($V_{th}$) shifted to negative direction with increasing pressure during deposition processing. As a result, oxygen vacancies generated in SZTO channel layer with increasing partial pressure resulted in negative shift in $V_{th}$ and increase in on-current.

• 한국정보디스플레이학회:학술대회논문집
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• 2009.10a
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• pp.1193-1196
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• 2009

Low resistivity interconnection and high-mobility channel are required to realize ultrahigh-definition LCDs such as 4k ${\times}$ 2k TVs. We evaluated fully Cu-based gate and Source/Drain interconnections, consisting of stacked pure-Cu/Cu-Mn layers for TFT-LCDs, and found the underlying Cu-Mn alloy film has superior adhesion to glass substrates and CVD-SiOx films. It was also confirmed that wet etching of the Cu/Cu-Mn films without residues and low contact resistance with both channel IGZO and pixel ITO films can be obtained. It is thus considered that the stacked Cu/Cu-Mn structure is one of candidates to replacing conventionally pure-Cu/refractory metal.