• Journal of the Korean Institute of Telematics and Electronics
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• v.25 no.11
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• pp.1286-1293
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• 1988

A general closed form expression for the channel length of the self-aligned double-diffused MOS transistor is obtained from the 2-dimensional Gaussian doping profile. The proposed model in this paper is composed of the doping concentration of the substrate, the final surface doping concentration and the vertical junction depth of the each double-diffused region. The calculated channel length is in good agreement with the experimental results. Also, the optimum channel structure for the prevention of the channel puncthrough is obtained by the averaged doping concentration in the channel region. A correspondence between the results of device simulation of channel punchthrough and the estimations of simplified model is confirmed.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.34 no.2
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• pp.142-147
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• 2021

We present a subthreshold swing model for a symmetric junctionless double gate MOSFET. The scale length λ1 required to obtain the potential distribution using the Poisson's equation is a criterion for analyzing the short channel effect by an analytical model. In general, if the channel length Lg satisfies Lg > 1.5λ1, it is known that the analytical model can be sufficiently used to analyze short channel effects. The scale length varies depending on the channel and oxide thickness as well as the dielectric constant of the channel and the oxide film. In this paper, we obtain the scale length for a constant permittivity (silicon and silicon dioxide), and derive the relationship between the scale length and the channel length satisfying the error range within 5%, compared with a numerical method. As a result, when the thickness of the oxide film is reduced to 1 nm, even in the case of Lg < λ1, the analytical subthreshold swing model proposed in this paper is observed to satisfy the error range of 5%. However, if the oxide thickness is increased to 3 nm and the channel thickness decreased to 6 nm, the analytical model can be used only for the channel length of Lg > 1.8λ1.

• Transactions on Electrical and Electronic Materials
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• v.8 no.1
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• pp.21-25
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• 2007

A two-dimensional TCAD MEDICI simulator was used to examine the voltage transfer characteristics, on-off switching properties and latch-up of a CMOS inverter as a function of the n-channel length and doping levels. The channel in a LDMOSFET encloses a junction-type source and is believed to be an important parameter for determining the circuit operation of a CMOS inverter. The digital logic levels of the output and input voltages were analyzed from the transfer curves and circuit operation. The high and low logic levels of the input voltage showed a strong dependency on the channel length, while the lateral substrate resistance from a latch-up path in the CMOS inverter was comparable to that of a typical CMOS inverter with a guard ring.

• Proceedings of the Korean Institute of Communication Sciences Conference
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• 1991.10a
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• pp.205-209
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• 1991

The conventional modeling equations for planar MOSFET can not be directly used for zero or minus junction depth concave MOSFET. In this paper, we suggest a new model which can simulate the electrical characteristics of concave MOSFET. The threshold voltage modeling was achieved using the charge sharing method considering the relative difference of source and drain depletion widths. To analyze the ID-VDS characteristics, the conventional expressions for planar MOSFET were employed with the electrical channel length as an effective channel length and the channel length modulation factor as ${\alpha}$ΔL. By comparing the proposed model with experimental results, we could get reasonably similar curves and we proposed a concave MOSFET conditiion which shows no short channel effect of threshold voltage(V${\gamma}$).

• Journal of Veterinary Clinics
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• v.21 no.2
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• pp.219-228
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• 2004

Heart diseases related to conduction system can be occurred by primary defects in conduction system and by secondary to morphological heart diseases or drug toxicities. Multiple molecular defects responsible for arrhythmogenesis, including mutations in ion channels, cytoplasmic ion-channel-interacting proteins, gap-junction proteins, transcription factors and a kinase subunit, were found to be associated with the aetiology of primary cardiac conduction defects, especially inherited form. Despite a big progress in unveiling human arrhythmogenesis, conduction defects in dog has not been well studied except sudden death syndrome in German shepherd. In this review, molecular genetics in cardiac arrhythmogenesis, inherited human diseases associated with conduction defects and similar diseases in dogs will be discussed.

• Proceedings of the Korea Water Resources Association Conference
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• 2009.05a
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• pp.678-682
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• 2009

하천의 합류부에서는 홍수시 침수피해가 빈번하게 발생 하거나 하안침식, 강턱붕괴, 하천의 장갑화 등의 악영향이 발생하는데, 이러한 현상의 원인 규명을 위해 본류와 지류의 유량비에 의해 혹은 지류의 유입각에 의해 다양한 흐름 특성을 가정하고 개수로 장치를 이용하거나 수치모형 실험을 통하여 연구되고 있다. 본 연구에서는 미시시피 대학 연구기관인 NCCHE(Natioanl Center for Computational Hydroscience an Engineering)에서 개발한 CCHE2D 2차원 수치모형을 이용하여, 개수로 합류부에서 흐름 및 하상변동 특성을 분석하였다. 수치모의 결과는 "Experiments on Flow at a $90^{\circ}$ Open-Channel Junction", Journal of Hydraulic Engineering, May 2001, Vol. 127, No. 5, 340-350.에 기재되었던 논문의 실내실험 결과와 비교분석하였으며, 유속의 분포는 $0.01{\sim}1.0$ m정도로 개수로 관측치와 비교적 유사하게 모의 되었다. 또한 하상 변동 모의 결과 Biron 등(1996)이 제안한 합류부에서 6구역의 흐름 정의도와 대체적으로 유사하게 모의 되었으며, 최대 유속 구간에서 $-0.2m{\sim}0.03m$의 침식이 발생하고, 정체 구간과 분리구간에서 $0.01{\sim}0.02m$의 퇴적이 발생하였다. 본 연구의 결과는 하천의 물리적 특성을 파악하고 하천공사나 수리구조물 설계의 기초 자료로 활용될 수 있을 것으로 판단된다.

• Proceedings of the Korea Water Resources Association Conference
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• 2004.05b
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• pp.386-390
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• 2004

하천은 자연 상태에서 내부분 단일 하천이 아닌 몇 개의 지류가 본류와 만나는 복잡한 하천망을 구성하며 하류로 흘러간다. 이 때 본류와 지류가 만나는 합류부에서는 본류와 지류의 합류각도나 유량에 의해 수리학적인 특성이 매우 민감하게 변화한다. 수리학적 특성에서는 수심이나 유속 등의 흐름에 대한 분석이 있을 뿐 아니라, 유사이동에서의 침식이나 퇴적과 같은 하상변동도 중요하게 고려되어야 한다. 그러나, 지금까지 합류점에 내한 연구가 대부분 물의 흐름 해석에 관한 연구이며, 하상변화에 대한 연구가 상당히 부족하다. 본 실험 연구에서는 본류와 지류의 접근각도를 $60^{\circ},\;75^{\circ},\;90^{\circ}$로 변화시키면서 분석하였으며, 유량비는 1:0.2, 1:0.35, 1:0.5로 변화시키면서 분석하였다. 이때 사용한 모형수로는 본류와 지류의 폭을 1:0.8로 하였으며, 이동상 실험을 위해 입경 1mm인 균일 모래를 이용하여 실험하였다. 그 결과 침식되는 길이는 유량비 및 접근각도가 증가함에 따라 커지는 경향을 나타내고 있으며, 이는 합류부에서의 하상침식에 대한 개선방향으로 활용될 수 있을 것으로 판단되고 있으며, 또한 접근각도가 증가함에 따라서는 최심경사는 점차 증가하는 것으로 나타났으나, 유량비가 증가함에 따라 감소하는 것으로 나타났다.

• Journal of Internet Computing and Services
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• v.18 no.6
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• pp.15-23
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• 2017

Wireless power transmission (WPT) for wireless charging is currently attracting much attention as a promising approach to miniaturize batteries and increase the maximum total range of an electric vehicle. The main advantage of the laser power beam (LPB) approach is its high power transmission efficiency (PTE) over long distance. In this paper, we present the design of a laser power beam based WPT system, which has a best WPT channel selection technique at the receiver end when multiple power transmitters and single power receiver are operated simultaneously. The transmitters send their transmission channel information via optically modulated laser pulses. The receiver uses the received signal strength indicator and digitized data to choose an optimum power transmission path. We modeled a vertical multi-junction photovoltaic cell array, and conducted an experiment and simulation to test the feasibility of this system. From the experimental result, the standard deviation between the mathematical model and the measured values of normalized energy distribution is 0.0052. The error between the mathematical model and measured values are acceptable, thus the validity of the model is verified.

• Korean Journal of Hydrosciences
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• v.5
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• pp.1-16
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• 1994

In this paper distributed models for simulating spatially and temporally varied moving storm in a watershed were developed. The complete simulation in a watershed is achieved through two sequential flow simulations which are overland flow simulation and channel network flow simulation. Two dimensional continuity equation and momentum equation of kinematic approximation were used in the overland flow simulation. On the other hand, in the channel network simulation two types of governing equations which are one dimensional continuity and momentum equations between two adjacent sections in a channel, and continuity and energy equations at a channel junction were applied. The finite difference formulations were used in the channel network model. Macks Creek Experimental Watershed in Idaho, USA was selected as a target watershed and the moving storm on August 23, 1965, which continued from 3:30 P.M. to 5:30 P.M., was utilized. The rainfall intensity fo the moving storm in the watershed was temporally varied and the storm was continuously moved from one place to the other place in a watershed. Furthermore, runoff parameters, which are soil types, vegetation coverages, overland plane slopes, channel bed slopes and so on, are spatially varied. The good agreement between the hydrograph simulated using distributed models and the hydrograph observed by ARS are Shown. Also, the conservations of mass between upstreams and downstreams at channel junctions are well indicated and the wpatial and temporal vaiability in a watershed is well simulated using suggested distributed models.

• Journal of Semiconductor Engineering
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• v.3 no.2
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• pp.161-167
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• 2022

Electrical characteristics of LDMOS power device with LDD(Lightly Doped Drain) structure is studied with variation of the region of channel and LDD. The channel in LDMOSFET encloses a junction-type source and is believed to be an important parameter for determining the circuit operation of CMOS inverter. Two-dimensional TCAD MEDICI simulation is used to study hot-carrier effect, on-resistance Ron, breakdown voltage, and transient switching characteristic. The voltage-transfer characteristics and on-off switching properties are studied as a function of the channel length and doping levels. The digital logic levels of the output and input voltages are analyzed from the transfer curves and circuit operation. Study indicates that drain current significantly depends on the channel length rather than the LDD region, while the switching transient time is almost independent of the channel length. The high and low logic levels of the input voltage showed a strong dependency on the channel length, while the lateral substrate resistance from a latch-up path in the CMOS inverter was comparable to that of a typical CMOS inverter with a guard ring.