• 제목/요약/키워드: channel dimension

검색결과 217건 처리시간 0.03초

DGMOSFET의 채널구조에 따른 항복전압변화에 대한 분석 (Analysis of Breakdown Voltages Deviation for Channel Dimension of Double Gate MOSFET)

  • 정학기;한지형;정동수;이종인
    • 한국정보통신학회:학술대회논문집
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    • 한국정보통신학회 2012년도 추계학술대회
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    • pp.811-814
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    • 2012
  • 본 연구에서는 이중게이트 MOSFET의 채널크기 변화에 따른 항복전압의 변화를 분석할 것이다. 차세대 나노소자인 DGMOSFET에 대한 단채널효과 중 매우 작은 값을 갖는 항복전압은 정확한 분석이 요구되고 있다. 항복전압분석을 위하여 포아송방정식의 분석학적 전위분포를 이용하였으며 이때 전하분포함수에 대하여 가우시안 함수를 사용함으로써 보다 실험값에 가깝게 해석하였다. 가우시안 함수의 변수인 이온주입범위 및 분포편차 그리고 소자 파라미터인 채널의 두께, 도핑농도 등에 대하여 항복전압 특성의 변화를 관찰하였다. 본 연구의 모델에 대한 타당성은 이미 기존에 발표된 논문에서 입증하였으며 본 연구에서는 이 모델을 이용하여 항복전압특성을 분석할 것이다. 분석결과 항복전압은 소자파라미터 및 가우시안분포함수의 모양에 크게 영향을 받는 것을 관찰할 수 있었다.

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FRACTAL ANALYSIS OF TIDAL CHANNEL USING HIGH RESOLUTION SATELLITE IMAGES

  • Eom, Jin-Ah;Lee, Yoon-Kyung;Ryu, Joo-Hyung;Won, Joong-Sun
    • 대한원격탐사학회:학술대회논문집
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    • 대한원격탐사학회 2007년도 Proceedings of ISRS 2007
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    • pp.29-32
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    • 2007
  • Tidal channel development is influenced by sediment type, grain size, composition and tidal current. Tidal channels are usually characterized by channel development, density and shape. Quantitative analysis of tidal channels using remotely sensed data have rarely been studied. The objective of this study is to quantify tidal channels in terms of fractal dimension and compare different inter-tidal channel patterns. For the fractal analysis, we used Box counting method which had been successfully applied to streams, coastlines and others linear features. For a study, the southern part of Ganghwado tidal flats was selected where is famous for high dynamics of tidal currents and vast tidal flats. This area has different widths and lengths of tidal channels. IKONOS and Komsat-2 MSC images were used for extracting tidal channels, and the Box counting method was applied to obtain fractal dimensions (D) for each tidal channel. Yeochari area possesses channels with linear pattern and less dense development and accordingly show low D values ranging from 1.037 to 1.038. On other hands, area (near Donggumdo and Yeongjongdo ) of dendrites channel pattern and dense development resulted in high D values from 1.2057 to 1.2667. Also, area possesses channels with linear pattern had low density about $18{\sim}24%$. Area of dendritic channel pattern had high density about $34{\sim}69%$. The difference of fractal dimensions about 0.2 according to channel development in tidal flats is relatively large enough to use as an index for tidal channel classification. Also, area where channels showed linear pattern had low density about $18{\sim}24%$. Area of dendritic channel pattern had high density about $34{\sim}69%$. Using fractal dimension and density, it would be possible to quantify the tidal channel development in association with surface characteristics.

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양자 현상을 고려한 나노미터 스케일 MUGFETS의 C-V 특성 (C-V Characteristics in Nanometer Scale MuGFETs with Considering Quantum Effects)

  • 윤세레나;유종근;박종태
    • 대한전자공학회논문지SD
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    • 제45권11호
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    • pp.1-7
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    • 2008
  • 본 연구에서는 양자 현상을 고려한 나노미터 MuGFET의 C-V 특성을 분석하기 위하여 2차원 Poisson-$Schr{\ddot{o}}dinger$ 방정식을 self-consisnt하게 풀 수 있는 시뮬레이터를 구현하였다. 소자 시뮬레이터를 이용하여 양자 현상으로 인한 소자크기와 게이트 구조에 따른 게이트-채널 커패시턴스 특성을 분석하였다. 소자의 크기가 감소할수록 단위 면적당 게이트-채널 커패시턴스는 증가하였다. 그리고 게이트 구조가 다른 소자에서는 게이트-채널 커패시턴스가 유효게이트 수가 증가할수록 감소하였다. 이런 결과를 실리콘 표면의 전자농도 분포와 인버전 커패시턴스로 설명하였다 또한 인버전 커패시턴스로부터 소자의 크기 및 게이트 구조에 따른 inversion-layer centroid 길이도 계산하였다.

Dual-channel directional couplers 동작특성 해석을 위한 BPM의 적용 (Application of the Beam Propagation Method to the analysis of Dual-channel directional couplers)

  • 강경우;강형부
    • 대한전기학회:학술대회논문집
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    • 대한전기학회 1993년도 하계학술대회 논문집 B
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    • pp.660-662
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    • 1993
  • We have numerically analyzed by using the Beam Propagation Method the Dual-channel directional couplers, which peforms a number of useful fuctions in thin-films devices, including power division, modulation, switching, frequency selection, and polarization selection. We also use the effective index method to reduce one dimension.

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결정적 사건기법(CIT)을 이용한 소비자의 유통채널 이용경험에 대한 연구 (Understanding the Consumer Experience in Retailing Channel Using Critical Incident Technique)

  • 최아영;나종연
    • 한국생활과학회지
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    • 제20권6호
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    • pp.1185-1198
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    • 2011
  • This research explores the consumers' experience in retailing channel(offline channel and online channel) using the critical incident technique. This research aims to clarify the common incidents within retailing channels which implies decisive factors over the channels, and to clarify the contrasts between channels to compare advantages and disadvantages. Therefore, the research is designed to collect the consumers' narrative of those who have used both channels in 3 months. Classifications are conducted with other researchers majoring consumer science. The results address how impressive experiences are constructed on each channel in three dimensions: product, information search, and the purchase-service dimension. These results are able to provide implications for offline and online retailers and directions for future research.

Alignment of transmitters in indoor visible light communication for flat channel characteristics

  • Curuk, Selva Muratoglu
    • ETRI Journal
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    • 제44권1호
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    • pp.125-134
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    • 2022
  • Visible light communication (VLC) systems incorporate ambient lighting and wireless data transmission, and the experienced channel in indoor VLC is a major topic that should be examined for reliable communication. In this study, it is realized that multiple transmitters in classical alignment are the forceful factors for channel characteristics. In the frequency band, fluctuations with sudden drops are observed, where the fluctuation shape is related to the source layout and receiver location. These varying frequency-selective channels need solutions, especially for mobile users, because sustained channel estimation and equalization are necessary as the receiver changes its location. It is proven that using light-emitting diodes (LEDs) with highly directional beams as sources or using a detector with a narrow field of view (FOV) in the receiver may help partially alleviate the problem; the frequency selectivity of the channel reduces in some regions of the room. For flat fading channel characteristics all over the room, LEDs should be aligned in hexagonal cellular structure, and detector FOV should be arranged according to the cell dimension outcomes.

급경사 만곡부 하도의 2차원 수리특성 해석 (Analysis of Two Dimensions Hydraulic Characteristic in Steep Meandering Channel)

  • 박기범;임기석
    • 한국환경과학회지
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    • 제16권9호
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    • pp.1039-1049
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    • 2007
  • This study analyzed two dimensions hydraulic characteristic for actual flood events in steep meandering channel. It could get analysis results as follows; A water level difference of downstream more great than one of upstream at inner and outer of meandering channel. It judged that a significance of downstream level could appear more greatly in meandering channel bank, hydraulic structure and flood inundation analysis. As velocity and depth analysis was shown that much amount flow passing fast velocity happened in meandering channel, it could help establishment of meandering channel bank. In this study, the results of two dimension hydraulic analysis results could help a counterpaln establishment for the flood inundation and bank collapse.

Design of DGMOSFET for Optimum Subthreshold Characteristics using MicroTec

  • Jung, Hak-Kee;Han, Ji-Hyeong
    • Journal of information and communication convergence engineering
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    • 제8권4호
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    • pp.449-452
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    • 2010
  • We have analyzed channel doping and dimensions(channel length, width and thickness) for the optimum subthreshold characteristics of DG(Double Gate) MOSFET based on the model of MicroTec 4.0. Since the DGMOSFET is the candidate device to shrink short channel effects, the determination of design rule for DGMOSFET is very important to develop sub-100nm devices for high speed and low power consumption. As device size scaled down, the controllability of dimensions and oxide thickness is very low. We have analyzed the short channel effects for the variation of channel dimensions, and found the design conditions of DGMOSFET having the optimum subthreshold characteristics for digital applications.

유리섬유 강화 플라스틱 노트북 커버의 전사성에 관한 연구 (A study on a transcription of pattern of the glass fiber reinforced laptom computer cover surface)

  • 곽용수;한성렬
    • Design & Manufacturing
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    • 제10권3호
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    • pp.39-45
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    • 2016
  • The purpose of this study is to build effective cooling circuit design in injection mold to improve glass fiber reinforced laptop computer cover plastics' transcription and gloss. Moldflow Insight and Ansys CFD CAE program used to verify efficiency and the experiment mold is precision machined and brazing soldered to make three-dimension cooling channel. The temperature of mold in injection test are fixed to $80^{\circ}C$ and $160^{\circ}C$. The result of this experiment is the improved surface quality of plastics with 85% improvement of transcription in high temperature mold.

Analysis of Transport Characteristics for FinFET Using Three Dimension Poisson's Equation

  • Jung, Hak-Kee;Han, Ji-Hyeong
    • Journal of information and communication convergence engineering
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    • 제7권3호
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    • pp.361-365
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    • 2009
  • This paper has been presented the transport characteristics of FinFET using the analytical potential model based on the Poisson's equation in subthreshold and threshold region. The threshold voltage is the most important factor of device design since threshold voltage decides ON/OFF of transistor. We have investigated the variations of threshold voltage and drain induced barrier lowing according to the variation of geometry such as the length, width and thickness of channel. The analytical potential model derived from the three dimensional Poisson's equation has been used since the channel electrostatics under threshold and subthreshold region is governed by the Poisson's equation. The appropriate boundary conditions for source/drain and gates has been also used to solve analytically the three dimensional Poisson's equation. Since the model is validated by comparing with the three dimensional numerical simulation, the subthreshold current is derived from this potential model. The threshold voltage is obtained from calculating the front gate bias when the drain current is $10^{-6}A$.