• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2000.04a
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• pp.191-194
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• 2000

In this study, we have investigated the photoinduced birefringence(PB), ${\Delta}n$ in chalcogenide $As_{40}Ge_{10}Se_{15}S_{35}$ thin film with a He-Ne Laser at 633nm as In this study, we have investigated the photoinduced birefringence(PB), ${\Delta}n$ in chalcogenide $As_{40}Ge_{10}Se_{15}S_{35}$ thin film with a He-Ne Laser at 633nm as a pumping beam and a semiconductor laser at 780nm as a probing beam. The PB for the variable thickness of thin films was investigated. The thickness of the thin films is about $0.4{\mu}m$, $0.92{\mu}m$, $1.4{\mu}m$, $2.0{\mu}m$, respectively. The experimental result of PB in chalcogenide thin films was represented higher PB in the thickness of thin film, $0.92{\mu}m$. It was meant to represent higher PB in the thickness of the film that was made closely the optimal thickness, $0.96{\mu}m$. The optimal thickness of thin film, $0.96{\mu}m$ was calculated by the penetration depth of the pumping light Also, the PB in thickness of $0.92{\mu}m$ was obtained almost two times higher 0.15 than other thickness of thin films.

• Bulletin of the Korean Chemical Society
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• v.25 no.7
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• pp.1095-1098
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• 2004

• Proceedings of the Materials Research Society of Korea Conference
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• 2007.11a
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• pp.74.1-74.1
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• 2007

• Proceedings of the Korean Society of Precision Engineering Conference
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• 2009.06a
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• pp.675-676
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• 2009

• Bulletin of the Korean Chemical Society
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• v.29 no.11
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• pp.2299-2302
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• 2008

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.11a
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• pp.23-23
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• 2009

Recently, the nanowire configuration of GST showed nanosecond-level phase switch at very low power dissipation, suggesting that the nanowires could be ideal for data storage devices. In spite of many advantages of IST materials, their feasibility in both thin films and nanowires for electronic memories has not been extensively investigated. The synthesis of the chalcogenide nanowires was mainly preformed via a vapor transport process such as vapor-liquid-solid (VLS) growth at a high temperature. However, in this study, IST nanowires as well as thin films were prepared at a low temperature (${\sim}250^{\circ}C$) by metal organic chemical vapor deposition(MOCVD) method, which is possible for large area deposition. The IST films and/or nanowires were selectively grown by a control of working pressure at a constant growth temperature by MOCVD. In-Sb-Te NWs will be good candidate materials for high density PRAM applications. And MOCVD system is powerful for applying ultra scale integration cell.

• Journal of the Korean Ceramic Society
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• v.32 no.2
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• pp.239-247
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• 1995

Chalcogenide glasses with compositions of Ge10Se90-xTex(X=0~50 at.%) were prepared in order to investigate the effects of Te substitution on the transmission characteristics of Ge-Se glasses in the 8~12 ${\mu}{\textrm}{m}$ wavelength region. Absorption coefficients were observed to decrease with Te addition, indicating the improved transmission capabilities of Ge-Se-Te glasses as compared to binary Ge-Se glasses. XRD analysis of crystallized glasses suggested the formation of weaker Se-Te and/or Te-Te bonds with addition of Te substituting for Se in stronger Se-Se bonds. Incorporation of Te in excess of 20at% resulted in the formation of hexagonal Te phases when crystallized. It is speculated that the presence of Te-Te bonds with highly metallic bond character resulted in the enhanced crystallization tendencies of glasses. Fromation of Te-rich chains through gradual replacement of Se-Se with Se-Te and/or Te-Te bonds was further supported by decreases in glass transition and crystallization temperatures.

• Journal of Korea Society of Industrial Information Systems
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• v.20 no.1
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• pp.57-62
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• 2015

Recently, thermography camera have been using for body-temperature monitoring. We report on fabrication of prototype thermography camera using the chalcogenide-glass lens and the camera test by analysis of thermal image. In this work, it was found out that thermography camera discerned body-temperature between 20 and $50^{\circ}C$ with noise equivalent temperature difference(NETD) of 87.7mK. It is confirmed that thermography camera using the chalcogenide-glass lens is applicable to the body-temperature monitoring system.

• Rapid Communication in Photoscience
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• v.3 no.4
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• pp.61-63
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• 2014

3,7-bis(4-(diphenylamino)phenyl)-5-phenyl-5H-benzo[b]phosphinedole 5-sulfide (DBPPS-TPA) and 3,7-bis(4-(diphenylamino)phenyl)-5-phenyl-5H-benzo[b]phosphinedole 5-selenide (DBPPSe-TPA) are newly synthesized D-A-D type molecules based on dibenzophospholes and their physic-chemical properties are studied in comparison with a P=O type compouond, 3,7-bis(4-(diphenylamino)-5-phenyl-5H-benzo[b]phosphinedole 5-oxide (DBPPO-TPA). Fluorescence emission and electrochemical redox properties of these compounds are investigated regarding results of density functional theory (DFT) calculations, X-ray crystallographic structures and UV-vis absorption spectra. These results exhibit systematic variation in optical properties of these compounds having P=O, P=S, and P=Se units. LUMO energy level is systematically modulated with different chalcogenide atoms.

• 한국신재생에너지학회:학술대회논문집
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• 2007.06a
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• pp.257-260
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• 2007

In this study, $CuInSe_{2}$ (CISe) and $CuInZnSe_{2}$ (CIZSe) thin films were prepared on Corning 1737 glass by radio frequency (RF) magnetron sputtering from binary chalcogenide mixed powder targets. The targets were initially prepared by mixing appropriate weights of CuSe, InSe powder and various ZnSe contents. From the film bulk analysis result, it is observed that Zn concentration in the films increases proportionally with the addition of ZnSe in the sputtering targets. Under optimized conditions, CISe and CIZSe thin films grow as a chalcopyrite structure with strong (112), (220/204) and (312/116) reflections. Films are found to exhibit a high absorption coefficient of $10^{4}$ $cm^{-1}$. An increasing of optical band gap from 1.0 eV (CISe) to 1.25 eV (CIZSe) is found to be proportional with an increasing of Zn concentration as expected. All films have a p-type semiconductor characteristic with a carrier concentration in the order of 1014 $cm^{-3}$, a mobility about $10^{1}$ $cm^{2{\cdot}-1}{\cdot}s^{-1}$ and a resistivity at the range of $10^{2}-10^{6}$ W${\cdot}$m.