• 한국세라믹학회지
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• 제44권12호
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• pp.683-689
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• 2007

Grain-boundary conduction in the fluorite-structure solid oxide electrolytes such as acceptor-doped zirconia and ceria were reviewed. The siliceous impurity, even several hundreds ppm, affects the ionic conduction across grain boundary to a great extent. Various approaches to improve grain-boundary conduction in fluorite-structure oxide electrolytes have been investigated, which include (1) the scavenging of siliceous phase by the reaction with second phase, (2) the gathering of intergranular siliceous phase into a discrete configuration and (3) the dewetting of intergranular liquid phase by post-sintering heat treatment.

• 한국세라믹학회지
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• 제52권6호
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• pp.527-530
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• 2015

The electrical properties of nanostructured Gd-doped $CeO_2$ (n-GDC) as a function of temperature and water partial-pressure were investigated using ac and dc measurements. For n-GDC, protonic conductivity prevails under wet condition and at low temperatures (< $200^{\circ}C$), while oxygen ionic conductivity occurs at high temperatures (> $200^{\circ}C$) under both dry and wet conditions. The grain boundaries in n-GDC were highly selective, being conductive for protonic transport but resistive for oxygen ionic transport. The protonic conductivity reaches about $4{\times}10^{-7}S/cm$ at room temperature (RT).

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2008년도 추계학술대회 논문집 Vol.21
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• pp.161-161
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• 2008

The oxide film of silicon wafer has been mainly polished by fumed silica, colloidal silica or ceria slurry. Because colloidal silica slurry is uniform and highly dispersed composed of spherical shape particles, by which the oxide film polished remains to be less scratched in finishing polishing process. Even though the uniformity and spherical shape is advantage for reducing the scratch, it may also be the factor to decrease the removal rate. We have studied the correlation of silica abrasive particles and CMP characteristics by varying pH, down force, and table rotation rate in polishing. It was found that the CMP polishing is dependent on the morphology, aggregation, and the surface property of the silica particles.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2004년도 춘계학술대회 논문집 반도체 재료 센서 박막재료 전자세라믹스
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• pp.89-92
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• 2004

Chemical mechanical polishing (CMP) process has been widely used to planarize dielectric layers, which can be applied to the integrated circuits for sub-micron technology. Despite the increased use of CMP process, it is difficult to accomplish the global planarization of in the defect-free inter-level dielectrics (ILD). we investigated the performance of $WO_3$ CMP used silica slurry, ceria slurry, tungsten slurry. In this paper, the effects of addition oxidizer on the $WO_3$ CMP characteristics were investigated to obtain the higher removal rate and lower non-uniformity.

• 대한기계학회논문집A
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• 제29권9호
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• pp.1276-1281
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• 2005

Compound semiconductors are the semiconductors composed of more than two chemical elements. Lithium Tantalate$K_I$ wafer is used for several optical devices, especially surface acoustic wave(SAW) device. Because of the lithography in SAW device process, $LiTaO_3$ polishing is needed. In this paper, the commercial slurries $(NALC02371^{TM},\; ILD1300^{TM},\;ceria slurry)$ used for chemical mechanical polishing(CMP) were tested, and the most suitable slurry was selected by measuring material removal rate and average centerline roughness$(R_a)$. From these result, it was proven that $ILD1300^{TM}$ was the most suitable slurry for $LiTaO_3$ wafer CMP due to the chemical reaction between solution in slurry and material.

• 한국신재생에너지학회:학술대회논문집
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• 한국신재생에너지학회 2009년도 추계학술대회 논문집
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• pp.184-186
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• 2009

Composites of LSCF($La_{0.6}Sr_{0.4}Co_{0.2}Fe_{0.8}O_{3-\delta}$ and CGO(gadolinium doped ceria) is an efficient candidate cathode material with CGO electrolytes. In this study, LSCF with exact perovskite structure was synthesized by using solid state reaction(SSR) method. The optimized temperature to synthesize $La_{0.6}Sr_{0.4}Co_{0.2}Fe_{0.8}O_{3-\delta}$ with rhombohedral structure. was $1100^{\circ}C$. The polarization resistance of the LSCF/CGO(50:50 wt.%) was smaller than those of other composite cathodes. The analysis of the EIS data of LSCF/CGO suggests that the diffusion and adsorption-desorption of oxygen can be the key process in the cathodic reaction of SOFC using LSCF/CGO as cathode material.

• 한국세라믹학회지
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• 제36권11호
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• pp.1205-1210
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• 1999

Ceria based electrolytes were fabricated by a plasma spraying method. The porosity which was crated during the plasma spraying process was infiltrated with Ce0.8Gd0.2O2 sol by ultrasonic treatment and heat treatment at 90$0^{\circ}C$ in order to improve physical and electrical properties. The porosity decreased from 9.8% to 6.5% and gas permeability at 80$0^{\circ}C$ decreased from 16.7$\times$10-3 to 5.7$\times$10-3 cm3(STP)/cm2.s.cmHg as the number of treatment increased 10 cycles. The ionic conductivity was also increased about 30% after 10 times of sealing.

• 한국세라믹학회지
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• 제34권10호
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• pp.1067-1073
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• 1997

The yttria doped ceria (YDC) thin films were fabricated by electrochemical vapor deposition on the porous $\alpha$-Al2O3 substrate. The growth rates of the films obeyed a parabolic rate law, which constant was 259.0 $m^2$/hr at 120$0^{\circ}C$. As deposition temperature (above 110$0^{\circ}C$) increased, dense thin films were enhanced. Mole fraction of XYC13 had an effect upon surface morphologies. Electrical conductivity was increased with deposition temperature. The conductivity of YDC film prepared at XYC13=7.9$\times$10-2 was about 0.097 S/cm at 104$0^{\circ}C$ and the activation energy of conduction was calculated to be 26.6 kcal/mol.

• 한국반도체및디스플레이장비학회:학술대회논문집
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• 한국반도체및디스플레이장비학회 2003년도 추계학술대회 발표 논문집
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• pp.122-125
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• 2003

We investigated the effect of the abrasive and additive concentrations in Nano ceria slurry on the pad surface temperature under varying pressure through chemical mechanical polishing (CMP) test using blanket wafers. The pad surface temperature after CMP increased with the abrasive concentration and decreased with increase of the additive concentration in slurries for the constant down pressure. A possible mechanism is that the additive adsorbed on the film surface during polishing decreases the friction coefficient, hence the pad surface temperature gets lower with increase of the additive concentration. This difference of temperature was more remarkable for the higher concentration of abrasives. In addition, in-situ measurement of spindle motor was carried out during oxide and nitride polishing. The averaged motor current for oxide film was higher than that for nitride film, which means the higher friction coefficient.

• 대한전기학회논문지:전기물성ㆍ응용부문C
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• 제55권12호
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• pp.549-554
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• 2006

In this paper we first applied the chemical mechanical polishing (CMP) process to the planarization of ferroelectric film in order to obtain a good planarity between electrode and ferroelectric film. $Pb_{1.1}(Zr_{0.52}Ti_{0.48})O_3$ (shortly PZT) ferroelectric film was fabricated by the sol-gel method. And then, we compared the structural characteristics before and after CMP process of PZT films. Removal rate, WIWNU% and surface roughness have been found to depend on slurry abrasive types and their hardness, especially, surface roughness and planarity were strongly depends on its pH value. A maximum in the removal rate is observed in the silica slurry, in contrast with the minimum removal rate occurs at ceria slurry. We found that the surface roughness of PZT films can be significantly reduced using the CMP technique.