• Title/Summary/Keyword: ceramic oxide layer

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Corrosion Behavior of Ytterbium Silicates in Water Vapor Atmosphere at High Temperature for Environmental Barrier Coating Applications (환경차폐코팅용 이터븀 실리케이트의 고온 수증기부식 거동)

  • Min-Ji Kim;Jae-Hyeong Choi;Seongwon Kim
    • Journal of the Korean institute of surface engineering
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    • v.56 no.6
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    • pp.443-450
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    • 2023
  • SiC/SiCf CMC is vulnerable to water vapor corrosion at a high temperature of 1500℃. So, EBC (Environmental Barrier Coating) materials are required to protect Si-based CMCs. Ytterbium silicates are reported to have coefficient of thermal expansion (CTE) similar to that of the base material, such as SiC/SiCf CMC. When the EBC are materials exposed to high temperature environment, the interface between ytterbium silicates and SiC/SiCf CMC is not separated, and the coating purpose can be safely achieved. For the perspective of EBC applications, thermally grown oxide (TGO) layer with different CTE is formed by the reaction with water vapor in EBC, which leads to a decrease in life time. In this study, we prepare two types of ytterbium silicates to observe the corrosion behavior during the expose to high temperature and water vapor. In order to observe this behavior, the steam-jet furnace is prepared. In addition, phase formation of these ytterbium silicates is analyzed with microstructures by the before/after steam-jet evaluation at 1500℃ for 100 h.

Fabrication of Solid Oxide Fuel Cells with Electron Beam Physical Vapor Deposition: I. Preparation of Thin Electrolyte Film of YSZ (전자빔 물리증착을 이용한 고체 산화물 연료전지의 제조 : I. YSZ 박막 전해질의 제조)

  • Kim, Hyoungchul;Koo, Myeong-Seo;Park, Jong-Ku;Jung, Hwa-Young;Kim, Joosun;Lee, Hae-Weon;Lee, Jong-Ho
    • Journal of the Korean Ceramic Society
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    • v.43 no.2 s.285
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    • pp.85-91
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    • 2006
  • Electron Beam Physical Vapor Deposition (EB-PVD) was applied to fabricate a thin film YSZ electrolyte with large area on the porous NiO-YSZ anode substrate. Microstructural and thermal stability of the as-deposited electrolyte film was investigated via SEM and XRD analysis. In order to obtain an optimized YSZ film with high stability, both temperature and surface roughness of substrate were varied. A structurally homogeneous YSZ film with large area of $12\times12\;cm^2$ and high thermal stability up to $900^{\circ}C$ was fabricated at the substrate temperature of $T_s/T_m$ higher than 0.4. The smoother surface was proved to give the better film quality. Precise control of heating and cooling rate of the anode substrate was necessary to obtain a very dense YSZ electrolyte with high thermal stability, which affords to survive after post heat treatment for fabrication a cathode layer on it as well as after long time operation of solid oxide fuel cell at high temperature.

Integration of Ba0.5Sr0.5TiO3Epitaxial Thin Films on Si Substrates and their Dielectric Properties (Si기판 위에 Ba0.5Sr0.5TiO3 산화물 에피 박막의 집적화 및 박막의 유전 특성에 관한 연구)

  • Kim, Eun-Mi;Moon, Jong-Ha;Lee, Won-Jae;Kim, Jin-Hyeok
    • Journal of the Korean Ceramic Society
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    • v.43 no.6 s.289
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    • pp.362-368
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    • 2006
  • Epitaxial $Ba_{0.5}Sr_{0.5}TiO_3$ (BSTO) thin films have been grown on TiN buffered Si (001) substrates by Pulsed Laser Deposition (PLD) method and the effects of substrate temperature and oxygen partial pressure during the deposition on their dielectric properties and crystallinity were investigated. The crystal orientation, epitaxy nature, and microstructure of oxide thin films were investigated using X-Ray Diffraction (XRD) and Transmission Electron Microscopy (TEM). Thin films were prepared with laser fluence of $4.2\;J/cm^2\;and\;3\;J/cm^2$, repetition rate of 8 Hz and 10 Hz, substrate temperatures of $700^{\circ}C$ and ranging from $350^{\circ}C\;to\;700^{\circ}C$ for TiN and oxide respectively. BSTO thin-films were grown on TiN-buffered Si substrates at various oxygen partial pressure ranging from $1{\times}10^{-4}$ torr to $1{\times}10^{-5}$ torr. The TiN buffer layer and BSTO thin films were grown with cube-on-cube epitaxial orientation relationship of $[110](001)_{BSTO}{\parallel}[110](001)_{TiN}{\parallel}[110](001)_{Si}$. The crystallinity of BSTO thin films was improved with increasing substrate temperature. C-axis lattice parameters of BSTO thin films, calculated from XRD ${\theta}-2{\theta}$ scans, decreased from 0.408 m to 0.404 nm and the dielectric constants of BSTO epitaxial thin films increased from 440 to 938 with increasing processing oxygen partial pressure.

Electrochemical Properties of Metal Aluminum and Its Application (금속알루미늄의 전기화학적 성질과 응용)

  • Tak, Yongsug;Kang, Jinwook;Choi, Jinsub
    • Applied Chemistry for Engineering
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    • v.17 no.4
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    • pp.335-342
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    • 2006
  • Metal aluminum, of which has a low standard reduction potential, participates in the electrochemical oxidation reaction and results in the structural change and accompanying property variation of aluminum and its oxide film. Aluminum was electrochemically etched in acid solution and the surface area was magnified by the formation of high density etch pits. Etched aluminum was covered with a compact and dense dielectric oxide film by anodization and applied to the capacitor electrode. Anodization of aluminum in acid solution at low temperature makes a nanoporous aluminum oxide layer which can be used for the fabrication template of nanostructural materials. Electrochemical characteristics of aluminum turn the metal aluminum into functional materials and it will bring the diverse applications of metal aluminum.

Effect of the Interaction between Matrix and Nitrate Additives on the Sintering of Silicon Nitride

  • Park, Dae-Chul;Toyohiko Yano;Takayoshi Iseki
    • The Korean Journal of Ceramics
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    • v.5 no.2
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    • pp.142-147
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    • 1999
  • The interaction between commercial $Si_3N_4$ powder and two types of additives (nitrate and oxide additives) during the sintering of $Si_3N_4$ was investigated. The nitrates solution or oxide particles were added as a sintering additives. The surface of mixed powder was observed with FT-IR, TG, and HREM. DTA was used to characterize the reactivity of the powders. The formation of crystalline phases and phase transformation were analyzed by XRD. The adsorption of the additives on the surface of silicon nitride was confirmed in the nitrate salts. It was shown that the adsorption occurred by interaction between the amorphous $SiO_2$ layer on the $Si_3N_4$ surface and metal cations $(Al^{3++\; and \;Y^{3+})$ and anions $(NO_3\;^-\; or\; OH^-)$, resulting in a higher degree of homogeneous distribution of additives.

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Corrosion behaviors of plasma electrolytic oxidation (PEO) treated high-silicon aluminum alloys

  • Park, Deok-Yong;Chang, Chong-Hyun;Oh, Yong-Jun;Myung, Nosang V.;Yoo, Bongyoung
    • Journal of the Korean institute of surface engineering
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    • v.55 no.3
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    • pp.143-155
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    • 2022
  • Ceramic oxide layers successfully were formed on the surface of cast Al alloys with high Si contents using plasma electrolytic oxidation (PEO) process in electrolytes containing Na2SiO3, NaOH, and additives. The microstructure of the oxide layers was systematically analyzed using scanning electron microscopy (SEM), cross-sectional transmission electron microscopy (TEM), X-ray diffraction patterns (XRD), and energy X-ray dispersive spectroscopy (EDS). XRD analysis indicated that the PEO untreated high-silicon Al alloys (i.e., 17.1 and 11.7 wt.% Si) consist of Al, Si and Al2Cu phases whereas Al2Cu phase selectively disappeared after PEO treatment. PEO process yielded an amorphous oxide layer with few second phases including γ-Al2O3 and Fe-rich phases. The corrosion behaviors of high-silicon Al alloys treated by PEO process were investigated using electrochemical impedance spectroscopy (EIS) and other electrochemical techniques (i.e., open circuit potential and polarization curve). Electroanalytical studies indicated that high-silicon Al alloys treated by PEO process have greater corrosion resistance than high-silicon alloys untreated by PEO process.

Characteristics of MOSFET Devices with Polycrystalline-Gallium-Oxide Thin Films Grown by Mist-CVD (Mist-CVD법으로 증착된 다결정 산화갈륨 박막의 MOSFET 소자 특성 연구)

  • Seo, Dong-Hyun;Kim, Yong-Hyeon;Shin, Yun-Ji;Lee, Myung-Hyun;Jeong, Seong-Min;Bae, Si-Young
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.33 no.5
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    • pp.427-431
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    • 2020
  • In this research, we evaluated the electrical properties of polycrystalline-gallium-oxIde (Ga2O3) thin films grown by mist-CVD. A 500~800 nm-thick Ga2O3 film was used as a channel in a fabricated bottom-gate MOSFET device. The phase stability of the β-phase Ga2O3 layer was enhanced by an annealing treatment. A Ti/Al metal stack served as source and drain electrodes. Maximum drain current (ID) exceeded 1 mA at a drain voltage (VD) of 20 V. Electron mobility of the β-Ga2O3 channel was determined from maximum transconductance (gm), as approximately, 1.39 ㎠/Vs. Reasonable device characteristics were demonstrated, from measurement of drain current-gate voltage, for mist-CVD-grown Ga2O3 thin films.

Effect of Manganese Vanadate Formed on the Surface of Spinel Lithium Manganese Oxide Cathode on High Temperature Cycle Life Performance

  • Kim, Jun-Il;Park, Sun-Min;Roh, Kwang Chul;Lee, Jae-Won
    • Bulletin of the Korean Chemical Society
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    • v.34 no.9
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    • pp.2573-2576
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    • 2013
  • Rate capability and cyclability of $LiMn_2O_4$ should be improved in order to use it as a cathode material of lithium-ion batteries for hybrid-electric-vehicles (HEV). To enhance the rate capability and cyclability of $LiMn_2O_4$, it was coated with $MnV_2O_6$ by a sol-gel method. A $V_2O_5$ sol was prepared by a melt-quenching method and the $LiMn_2O_4$ coated with the sol was heat-treated to obtain the $MnV_2O_6$ coating layer. Crystal structure and morphology of the samples were examined by X-ray diffraction, SEM and TEM. The electrochemical performances, including cyclability at $60^{\circ}C$, and rate capability of the bare and the coated $LiMn_2O_4$ were measured and compared. Overall, $MnV_2O_6$ coating on $LiMn_2O_4$ improves the cyclability at high temperature and rate capability at room temperature at the cost of discharge capacity. The improvement in cyclability at high temperature and the enhanced rate capability is believed to come from the reduced contact between the electrode, and electrolyte and higher electric conductivity of the coating layer. However, a dramatic decrease in discharge capacity would make it impractical to increase the coating amount above 3 wt %.

Deposition Properties of NiCr Thin Films Prepared by Thermal Evaporation (Thermal Evaporation법으로 제조한 NiCr 박막의 증착 특성)

  • Kun, Yong;Park, Yong-Ju;Choi, Seoung-Pyung;Jung, Jin;Choi, Gwang-Pyo;Ryu, Hyun-Wook;Park, Jin-Seong
    • Journal of the Korean Ceramic Society
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    • v.41 no.6
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    • pp.450-455
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    • 2004
  • NiCr thin films were fabricated by thermal evaporation method using NiCr alloy as evaporating source. NiCr thin films were annealed at various temperatures in air atmosphere in order to investigate effects of annealing conditions on phase change, composition, and microstructures of NiCr films. Typical multilayer was formed after annealing in air atmosphere. This results from the diffusion and oxidation of Cr toward surface during annealing. In the case of annealing at 700$^{\circ}C$, large columnar grains of NiO were formed on Cr-oxide layer through the diffusion and oxidation of Ni over Cr-oxide layer. Especially, NiO layer was formed additionally on surface, sustaining the underlayer structure with the formation of porous Ni layer.

Characteristics of Expression according to Iron Oxide Content in Ceramic Glaze (도자기 유약 내 철산화물 함량에 따른 흑유 발현 특성)

  • Choi, Jae Won;Han, Min Su
    • Journal of Conservation Science
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    • v.36 no.5
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    • pp.393-404
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    • 2020
  • We observed changes in the properties of the glaze layer according to the content of iron oxide and inferred the composition, content, and environment of the materials used in the past during the production process of black ware. First, experiments were conducted using different ratios of iron oxide, feldspar, calcite, and ash at different temperatures and firing environments; the characteristics of glaze were classified into five groups in the oxidation environment. Different properties were identified in the reducing environment above 1200℃. The crystal identified in the experiment was similar to the glaze characteristics in the excavated black ware. The crystal phase appeared in four groups: band shape, circular, arborescent phase, and needle crystal, depending on the change in the content of iron oxide. However, the difference in crystals did not appear significantly at high temperatures. In addition, crystals of glaze were divided into two groups depending on the component ratio. The presence or absence of feldspar is thought to affect crystallinity and amorphous iron oxide and the changes in the glaze layer changed substantially depending on the amount of iron oxide. In particular, it was confirmed that the aspects of iron oxide in the oxidation and reduction environments were different and, therefore, crystallization due to the firing environment also affected the optical characteristics.