• Journal of the Korean Ceramic Society
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• v.29 no.4
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• pp.273-282
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• 1992

The effects of intrinsic and extrinsic gettering on the formation of microdefects in the wafer and on the electrical performance at near-surfaces of three different oxygen-bearing Czochralski silicon single crystal wafers were investigated by varying the combinations of the pre-heat treatments and the phosphorus diffusion through the back-surface of the wafers. The wafers which had less than 10.9 ppma of oxygen formed no gettering zones irrespective of any pre-heat treatments, while the wafers which had more than 14.1 ppma of oxygen and were treated by Low+High pre-heat treatments generated the gettering zone comprising oxygen precipitates, staking faults, and dislocation loops. The effects of extrinsic gettering by phosphorus diffusion were evident in all samples such that the minority carrier lifetimes were increased and junction leakage currents were decreased. However, the total gettering effects among the different pre-heat treatments did not necessarily correspond to the gettering structure revealed by synchrotron radiation section topograph.

• Journal of the Korean Ceramic Society
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• v.43 no.2 s.285
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• pp.131-135
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• 2006

In this study, the dielectric, magnetic and transport properties of $Gd_{0.33}Sr_{0.67}FeO_3$ have been analyzed. The dielectric loss anomaly was found to be around 170 K. The activation energy corresponding to relaxation process of this dielectric anomaly was 0.17 eV. From the temperature dependence of the characteristic frequency, we concluded that the elementary process of the dielectric relaxation peak observed is correlated with polaron hopping between $Fe^{3+}\;and\;Fe^{4+}$ ions. The electrical resistivity displayed thermally activated temperature dependence above 200 K with an activation energy of 0.16 eV. In addition, the temperature dependence of thermoelectric power and resistivity suggests that the charge carrier responsible for conduction is strongly localized.

• Journal of the Korean Ceramic Society
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• v.34 no.12
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• pp.1275-1281
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• 1997

ZnO varistors containing 5.0 at% Co3O4 and Pr6O11, ranging from 0.1 to 1.0 at%, were sintered at 130$0^{\circ}C$ and 135$0^{\circ}C$. The I-V characteristics and nonlinear coefficients of the specimens were investigated with respect to Pr addition and sintering temperature. In general the specimens sintered at 130$0^{\circ}C$ showed better varistor characteristic than those fired at 135$0^{\circ}C$, which seemed to be related with the liquid phase formation during sintering. The barrier heights obtained from C-V relations, 0.29-1.36 eV, were different from those acquired using resistivity-temperature plots measured at low voltage per grain boundary. Therefore the estimation of potential barrier heights using C-V relations is better suited for the specimens prepared in this study. The carrier densities obtained using C-V relations were ~1018 cm-3.

• Journal of the Korean Ceramic Society
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• v.25 no.4
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• pp.341-348
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• 1988

Thin films of tin-oxide were prepared by chemical vapor deposition technique using the direct of SnCl4. Resistivity and carrier concentration of deposited SnO2 thin film were measured by 4-point probe method and Hall effect measurement. The results showed the remarkable dependence of electrical properties on the deposition temperature. As the deposition temperature increased, resistivity of deposited film initially decreased to a minimum value of ~10-3$\Omega$cm at 50$0^{\circ}C$, and then rapidly increased to ~10$\Omega$cm at $700^{\circ}C$. Electrical conductance of these films was measured in exposure to H2 gas. It was found that gas sensitivity was affected combination of film thickness and intrinsic resistivity of deposited film. Gas sensitivity increased with decrease of film thickness. Fairly high sensitivity to H2 gas was obtained for the film deposited at $700^{\circ}C$. Optimum operation temperature of sensing was 30$0^{\circ}C$ for H2 gas.

• Journal of the Korean Ceramic Society
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• v.30 no.5
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• pp.373-380
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• 1993

Li2O-B2O3-P2O5 glasses with high lithium content were analysed by electrical characterization. The electrical conductivity increase with Li content and exhibits a maximum value of 1.2$\times$10-4S/cm near B2O3/P2O5=1 at 15$0^{\circ}C$. Glass transitiion temperature increased with conductivity. Concentration of charge carrier and distribution of relaxation time were independent of temperature. In this system the variation of conductivity with the composition was depend on mobility of lithium ion. Basically, it is attribute to primitive activation energy. Enhancement of conductivities was related to be formation of (B-O-P)-, di-, and metaborate group, which give additional available sites for Li+ diffusion.

• Journal of Powder Materials
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• v.10 no.5
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• pp.310-317
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• 2003

Two-component ceramic (alumina-zirconia) composites were fabricated by a soft-solution process in which polyethylene glycol (PEG) was used as a polymeric carrier. Metal salts and PEG were dissolved in ethyl alcohol without any precipitation in 1:1 volume ratio of alumina and zirconia. In the non-aqueous system, the flammable solvent made explosive, exothermic reaction during drying process. The reaction resulted in formation of volume expanded, porous precursor powders by a vigorous decomposition of organic components in the precursor sol. The PEG content affected the grain size of sintered composites as well as the morphology of precursor powders. The difference of microstructure in sintered composite was attribute to the solubility and homogeneity of metal cations in precursor sol. At the optimum amount of the PEG polymer, the metal ions were dispersed effectively in solution and a homogeneous polymeric network was formed. It made less agglomerated particles in the precursor sol and affected on uniform grain size in sintered composite.

• Journal of the Korean Ceramic Society
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• v.29 no.9
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• pp.705-710
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• 1992

For the ultimate purpose of mapping, with a high precision, the local electrochemical potentials of an ionic carrier in nonisothermal conditions, an ionic probe for Ag+ ions, Pt/Ag/AgI, has been miniaturized to a tip size of 20∼30$\mu\textrm{m}$, by an electrochemical technique combined with gas (I2)/solid (Ag) reaction, and its performance checked by measuring the partial electronic and ionic conductivities of Ag2S from the ion and electron blocking cells, Ag/Ag2S/Pt and Ag/Ag2S/AgI/Ag, respectively. The results have firmly confirmed that the miniaturzed probe function quite validly and be very promising.

• Journal of the Korean Ceramic Society
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• v.27 no.3
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• pp.337-344
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• 1990

As a function of sintering temperature and time, the electrical properties of ruthenium based thick film resistors were investigated with microstructure. The variatio of resistivity and TCR(temperature coefficient of resistance)trends of sintered speciman at various sintering temperature were different low resistivity paste(Du Pont 1721) from high one(Du Pont 1741). These phenomena are deeply relative to microstructure of sintered film. With increasing the sintering temperature for 1721 system, the electrical sheet resistivity decreased, but again gradually increased above 80$0^{\circ}C$. And TCR trends in 1721 system are all positive. On the other hand the electrical sheet resistivity of 1741 resistor system decreased with sintering temperature. And TCR trends variable according to sintering temperature. TCR of speciman sintered at $700^{\circ}C$ was negative value, and TCR of 80$0^{\circ}C$ sintered speciman coexisted negative and positive value. But in case of speciman sintered at 90$0^{\circ}C$, TCR was positive value. As results of this fact, it was well known that the charge carrier contributied to electrical conduction in 1741 resistor system varied with sintering temperature.

• Journal of the Korean Ceramic Society
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• v.55 no.2
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• pp.95-107
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• 2018

This presentation will give an overview of Ca-aluminate based biomaterials and their proposed use within the field of nanostructured biomaterials. The paper describes typical features of Ca-aluminate materials with regard to technology, chemistry, biocompatibility including hemocompatibility and bioactivity, and developed microstructure. Special focus will be on the developed microstructure, which is in the nanosize range. Application possibilities within odontology, orthopedics, and drug delivery are presented. The nanostructure including pore size below 5 nm in these structures opens up this material for some use in specific dental-related applications in which antibacterial and bacteriostatic aspects are of importance, and as thin coating on implants within dental and orthopaedic applications. Nanosize porosity is essential in drug delivery systems for controlled release of medicaments. The priority field for Ca-aluminate biomaterials is implant materials, which use minimally-invasive techniques to offer in vivo, on-site developed biomaterials.

• Journal of the Korean Ceramic Society
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• v.47 no.4
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• pp.353-356
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• 2010

Zinc oxide (ZnO) thin films were deposited using atomic layer deposition. The electrical and optical properties were characterized using Hall measurements, spectroscopic ellipsometry and UV-visible spectrophotometry. The electronic concentration and the mobility were found to be critically dependent on the deposition temperature, exhibiting increased resistivity and reduced electronic mobility at low temperature. The corresponding optical properties were measured as a function of photon energy ranging from 1.5 to 5.0 eV. The simulated extinction coefficients allowed the determination of optical band gaps, i.e., ranging from 3.36 to 3.41 eV. The electronic carrier concentration appears to be related to the reduction in the corresponding band gap in ZnO thin films.