• 한국생물공학회:학술대회논문집
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• 2001.11a
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• pp.290-293
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• 2001

In this study, media optimization by statistically designed experiments stimulated an increase in cell growth of Bacillus sp. during batch cultivation. Plackett-Surman design method selected 3 components among 7 components of production medium. Box-Behnken design method calculated the optimum concentration of selected components by Plackett-Surman design. In the optimized medium, viable cell number increased 2 times. Addition of antifoam effected the cell growth depending on the type of antifoam Vegetable oil, are a carbon source and an antifoam. increased cell growth and controlled foaming

• Transactions of the Korean Society of Mechanical Engineers A
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• v.21 no.11
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• pp.1921-1930
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• 1997

This paper presents the effective technique to design a six-axis load cell by using experimental design with an orthogonal array. A binocular structure is used as a basic sensing element for a load cell instead of the parallel plate structure. The finite element method is adopted to obtain strain distributions of the sensing element, and by doing the analysis of variances, its results are utilized in determining the factor which is more influential to the output strain. Calibration test results show that the developed six-axis loa cell with the maximum capacities of 196 N in forces and 19.6 N. m in moments is evaluated to be useful with the coupling error less than 2.5%.

• The Journal of Korean Institute of Communications and Information Sciences
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• v.32 no.3B
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• pp.153-160
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• 2007

Placing antennas of low power base stations below surrounding buildings, as in urban microcells, makes propagation characteristics strongly dependent on the building environment. As a result, propagation in these urban microcells is non-isotropic, so that the assumption of circular cells used in planning of conventional cellular sys toms is no longer valid. Assuming circular cells leads to a more conservative system design, implying more base stations. This work investigates the effect of cell shape, due to non-isotropic propagation, on the out-of-cell interference and Erlang capacity of CDMA system. Propagation is described by measurement derived models for low antennas in a rectangular urban street grid. The analysis is done for soft handoff protocols.

• Proceedings of the Korean Society of Propulsion Engineers Conference
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• 2010.11a
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• pp.339-342
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• 2010

Doosan Heavy Industries & Construction Co., Ltd. constructed a gas turbine engine test cell to verify operating characteristics and design parameters of 5MW class gas turbine engine for power generation under developing. Engine test cell was designed to satisfy critical requirements to scrutinize all performance parameters of the engine with safe and reliability in accordance with design specification. As the test cell developed can effectively reproduce engine operation conditions covering from start-up to maximum power condition, it can be utilized to make a continuing design improvement of the engine based on practical test data at full stretch. Moreover, it is expected to be serviceable to develop derivative engines and be utilized to put them into serial production and contribute to a competitiveness reenforcement as a gas turbine engine manufacturer.

• Journal of the Korea Computer Industry Society
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• v.6 no.5
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• pp.757-766
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• 2005

There have been great demands for higher density SRAM in all area of SRAM applications, such as mobile, network, cache, and embedded applications. Therefore, aggressive shrinkage of 6T Full CMOS SRAM had been continued as the technology advances, However, conventional 6T Full CMOS SRAM has a basic limitation in the cell size because it needs 6 transistors on a silicon substrate compared to 1 transistor in a DRAM cell. The typical cell area of 6T Full CMOS SRAM is $70{\sim}90F^{2}$, which is too large compared to $8{\sim}9F^{2}$ of DRAM cell. With 80nm design rule using 193nm ArF lithography, the maximum density is 72M bits at the most. Therefore, pseudo SRAM or 1T SRAM, whose memory cell is the same as DRAM cell, is being adopted for the solution of the high density SRAM applications more than 64M bits. However, the refresh time limits not only the maximum operation temperature but also nearly all critical electrical characteristics of the products such as stand_by current and random access time. In order to overcome both the size penalty of the conventional 6T Full CMOS SRAM cell and the poor characteristics of the TFT load cell, we have developed $S^{3}$ cell. The Load pMOS and the Pass nMOS on ILD have nearly single crystal silicon channel according to the TEM and electron diffraction pattern analysis. In this study, we present $S^{3}$ SRAM cell technology with 100nm design rule in further detail, including the process integration and the basic characteristics of stacked single crystal silicon TFT.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.19 no.4
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• pp.314-321
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• 2006

There have been great demands for higher density SRAM in all area of SRAM applications, such as mobile, network, cache, and embedded applications. Therefore, aggressive shrinkage of 6 T Full CMOS SRAM had been continued as the technology advances. However, conventional 6 T Full CMOS SRAM has a basic limitation in the cell size because it needs 6 transistors on a silicon substrate compared to 1 transistor in a DRAM cell. The typical cell area of 6 T Full CMOS SRAM is $70{\sim}90\;F^2$, which is too large compared to $8{\sim}9\;F^2$ of DRAM cell. With 80 nm design rule using 193 nm ArF lithography, the maximum density is 72 Mbits at the most. Therefore, pseudo SRAM or 1 T SRAM, whose memory cell is the same as DRAM cell, is being adopted for the solution of the high density SRAM applications more than 64 M bits. However, the refresh time limits not only the maximum operation temperature but also nearly all critical electrical characteristics of the products such as stand_by current and random access time. In order to overcome both the size penalty of the conventional 6 T Full CMOS SRAM cell and the poor characteristics of the TFT load cell, we have developed S3 cell. The Load pMOS and the Pass nMOS on ILD have nearly single crystal silicon channel according to the TEM and electron diffraction pattern analysis. In this study, we present $S^3$ SRAM cell technology with 100 nm design rule in further detail, including the process integration and the basic characteristics of stacked single crystal silicon TFT.

• 제어로봇시스템학회:학술대회논문집
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• 2005.06a
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• pp.2054-2057
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• 2005

In this paper, the application of finite element method to design the shape of load cell as an illustrative case study is described. The relationship between the various shapes of load cell and their stress characteristic were analyzed by COSMOS simulation program. The results obtained from the proposed analysis can be applied to determine the appropriate position of strain gauges for good quality load cell. The experimental results show the good efficiency of the proposed technique.

• Korean Journal of Computational Design and Engineering
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• v.2 no.3
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• pp.142-149
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• 1997

This study is intended to develop a Feature based modeler. It is difficult to integrate CAD and CAM/CAPP with information that is given only by a conventional CAD system. Therefore a lot of studies have concentrated on a Feature based CAD system. But conventional Feature based modelers have had limitation on providing sufficient information related to Feature interaction. If a Feature based modeler is to be used in assembly simulation, a new Feature-based modeling method needs to be developed. Also to support collision detection between parts, we have to handle Feature interaction systematically. Therefore we suggest Cell data structure which handles interaction of Features by volume. The volume created by Feature interaction is saved as a Cell. With the Cell structure we solve problems involved with Feature interaction. This study shows how the Cell data structure can manage Feature interaction and give enough information in assembly simulation.

• KIEE International Transaction on Electrical Machinery and Energy Conversion Systems
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• v.12B no.1
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• pp.37-43
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• 2002

This paper proposes a new zero-current switching (ZCS) pulse-width modulation (PWM) switch cell that has no additional conduction loss of the main switch. In this cell, the main switch and the auxiliary switch turn on and turn off under zero current condition. The diodes commutate softly and the reverse recovery problems are alleviated. The conduction loss and the current stress of the main switch are minimized, since the resonating current for the soft switching does not flow through the main switch. Based on the proposed ZCS PWM switch cell, a new family of dc to dc PWM converters is derived. The new family of ZCS PWM converters is suitable for the high power applications employing IGBTs. Among the new family of dc to dc PWM converters, a boost converter was taken as an example and has been analyzed. Design guidelines with a design example are described and verified by experimental results from the 2.5㎾ prototype boost converter operating at 40KHz.

• Proceedings of the KIEE Conference
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• 1993.11a
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• pp.201-203
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• 1993

Recently, micro-scaled cell fusion system in the bioiogical cell fusion is preferred to Nacro-scaled one by dint of microelectronic processes. The microfabricated cell fusion system has its components such as fusion chamber, selector and detector. In this paper, we describe the design rules of the micro-fabricated cell fusion system using dielectrophoretic force and analyze its components using finite element method.