• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2005년도 International Meeting on Information Displayvol.II
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• pp.1580-1583
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• 2005

We report simple new techniques to express analysis of display materials. Colour Cathodoluminescence combined with scanning electron microscopy and spectroscopy is a powerful, non-destructive, high-resolution method for investigation luminescent materials. Some applications of this method to powder phosphors used in display are demonstrated.

• 한국진공학회지
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• 제15권5호
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• pp.541-546
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• 2006

본 연구에서는 박막형 $ZnGa_2O_4:Mn$ 산화물 형광체의 음극선루미느센스 특성과 구조적 성질에 대하여 field emission scanning electron microscopy (FESEM), atomic force microscopy (AFM), photoluminescence (PL), 그리고 cathodoluminescence (CL) 방법을 이용하여 조사하였다. $ZnGa_2O_4:Mn$ 형광체 타겟으로부터 $Mn^{2+}$ 이온의 $^4T_1{\rightarrow}^6A_1$ 전이에 의한 506nm 파장에서의 PL emission 스펙트럼이 관찰되었다. 색좌표는 x = 0.09, y = 0.67 이었다. $ZnGa_2O_4:Mn$ 박막의 여기 스펙트럼은 $Mn^{2+}$ 이온 흡수에 의한 294 nm의 피크 파장을 나타내었다. 낮은 압력에서 증착한 $ZnGa_2O_4:Mn$ 형광체 박막은 고밀도의 치밀한 단면구조를 보였고, 높은 세기의 음극선루미느센스가 505 nm 피크 파장에서 나타났다. 표면 거칠기가 음극선루미느센스의 세기에 미치는 영향은 관찰되지 않았다.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2001년도 추계학술대회 논문집 전기물성,응용부문
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• pp.12-15
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• 2001

Polycrystalline diamond films are deposited by cyclic method. modulating the $H_2$ Plasma and $CH_4+H_2$ plasma during the growth step. Diamond quality is evaluated by FWHM and $I_D/I_G$ ratio obtained from Raman spectroscopic analysis. Structural defects and impurities generated during the growth step are characterized by cathodoluminescence, and the variations between band-A(430 nm) line and nitrogen-related(578 nm) line are investigated as a function of $T_E/T_G$. Furthermore, the correlations between preferential orientation. film morphologies and CL characteristics are also investigated.

• 한국세라믹학회지
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• 제35권2호
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• pp.107-114
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• 1998

ZnO powder as phosphor was prepared by precipitation method with zinc acetate and ammonia solution and the size and shapes of precipitates were examined with variation of pH and concentration of solution. Its cathodoluminesence properties was evaluated with various heat tratment condition. Optimum con-dition for uniform precipitates was 11.8 of pH and 0.4M of concentration. ZnO:Zn phosphor was obtained by heat treatment of precipitates in reduction atmosphere using ZnS powder. With addition of 20wt% ZnS and 1 hour firing at 1000$^{\circ}C$ the highest cathodoluminescence was obtained.

• Bulletin of the Korean Chemical Society
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• 제24권5호
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• pp.566-568
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• 2003

The phosphor $CaTiO_3:Pr^{3+}$ attracts much attention as a low-voltage red phosphor because of its good chromaticity and intrinsic conductivity. The addition of Ga into this CaTiO₃:Pr led the luminance intensity to greatly enhance without the change of the wavelength for the electronic transition and the peak shape of it. The increase of the recombination rate of electron-hole pairs through the Ga ion doping, which was expected to play a role of a hole-trap center, is proposed to be one of the reasons for the enhancement of the cathodoluminescence intensity.

• Journal of the Optical Society of Korea
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• 제18권3호
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• pp.283-287
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• 2014

Square lattice nano-hole arrays with diameters and periodicities of 200 and 500 nm, respectively, are fabricated on InGaN/GaN blue light emitting diodes (LEDs) using electron-beam lithography and inductively coupled plasma reactive ion etching processes. Cathodoluminescence (CL) investigations show that light emission intensity from the LEDs with the nano-hole arrays is enhanced compared to that from the planar sample. The CL intensity enhancement factor decreases when the nano-holes penetrate into the multiple quantum wells (MQWs) due to the plasma-induced damage and the residues. Wet chemical treatment using KOH solution is found to be an effective method for light extraction from the nano-patterned LEDs, especially, when the nano-holes penetrate into the MQWs. About 4-fold CL intensity enhancement factor is achieved by the KOH treatments after the dry etching for the sample with a 250-nm deep nano-hole array.

• 한국전기전자재료학회논문지
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• 제36권4호
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• pp.326-331
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• 2023

The utilization of scanning transmission electron microscopy (STEM) in conjunction with cathodoluminescence (CL) has emerged as a valuable tool for the investigation of material optical properties. In recent years, this technique has facilitated significant advancements in the fields of plasmonics and quantum emitters by surpassing prior technical restrictions. The review commences by providing an outline of the diverse STEM-CL operating modes and technical aspects of the instrumentation. The review explains the fundamental physics of light production under electron beam irradiation and the physical basis for interpreting STEM-CL experiments for different types of excitations. Additionally, the review compares STEM-CL to other related techniques such as scanning electron microscope CL, photoluminescence, and electron energy-loss spectroscopy.

• Bulletin of the Korean Chemical Society
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• 제31권5호
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• pp.1389-1392
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• 2010

• Bulletin of the Korean Chemical Society
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• 제27권10호
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• pp.1708-1711
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• 2006

• Bulletin of the Korean Chemical Society
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• 제21권3호
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• pp.295-299
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• 2000

The photoluminescence and cathodoluminescence of $SrGa_2S_4:EU$ phosphor were optimized with the process and chemical variables (activators, fluxes and reaction temperature) used in solid state reaction. Firing the powder with flux at $800^{\circ}C$ for 2hr gave the highest photoluminescence efficiency under near-UV excitation and the highest cathodoluminescence efficiency of 20.1 lm/W at 2 kV and 33.3 lm/W at 10 kV. The suitability of $SrGa_2S_4:EU$ for application as a phosphor in LCDs and FEDs is discussed.