• 제목/요약/키워드: carrier transport

검색결과 529건 처리시간 0.027초

The Electronic and Thermoelectric Properties of Si1-xVx Alloys from First Principles

  • Ramanathan, Amall Ahmed;Khalifeh, Jamil Mahmoud
    • Applied Microscopy
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    • 제47권3호
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    • pp.105-109
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    • 2017
  • The effect of temperature and vanadium metal concentration on the electronic and thermoelectric properties of Si in the diamond cubic structure has been investigated using a combination of density functional theory simulations and the semi classical Boltzmann's theory. The BotzTrap code within the constant relaxation time approximation has been used to obtain the Seebeck coefficient and other transport properties of interest for alloys of the structure $Si_{1-x}V_x$, where x is 0, 0.125, 0.25, 0.375, and 0.5. The thermoelectric properties have been extracted for a temperature range of 300 K to 1,000 K. The general trend with V atom substitution for Si causes the Seeback coefficient to increase and the thermal conductivity to decrease for the various alloys. The optimum values are for $Si_5V_3$ and $Si_4V_4$ alloys for charge carrier concentrations of $10^{21}cm^{-3}$ in the mid temperature range of 500~800 K. This is a very desirable effect for a promising thermoelectric and the figure of merit ZT approaches 0.2 at 600 K for the p-type $Si_5V_3$ alloy.

Role of edge patterning and metal contact for extremely low contact resistance on graphene

  • Jo, Seo-Hyeon;Park, Hyung-Youl;Park, Jin-Hong
    • 한국진공학회:학술대회논문집
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    • 한국진공학회 2016년도 제50회 동계 정기학술대회 초록집
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    • pp.294.2-294.2
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    • 2016
  • Graphene, a sigle atomic layered structure of graphite, has drawn many scientific interests for attractive future electronics and optoelectronics beyond silicon-based technology because of its robust physical, optical, and electrical properties. But high metal-graphene contact resistance prevents the successful integration of high speed graphene devices and circuits, although pristine graphene is known to have a novel carrier transport property. Meanwhile, in the recently reported metal-graphene contact studies, there are many attempts to reduce the metal-graphene contact resistance, such as doping and one-dimensional edge contact. However, there is a lack of quantitative analysis of the edge contact scheme through variously designed patterns with different metal contact. We first investigate the effets of edge contact (metal-graphene interface) on the contact resistance in terms of edge pattern design through patterning (photolithography + plasma etching) and electral measurements. Where the contact resistance is determined using the transfer length method (TLM). Finally, we research the role of metal-kind (Palladium, Copper, and Tianium) on the contact resistance through the edge-contacted devices, eventually minimizing contact resistance down to approximately $23{\Omega}{\cdot}{\mu}m$ at room temperature (approximately $19{\Omega}{\cdot}{\mu}m$ at 100 K).

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저온에서 La2/3+xTiO3-δ (x = 0, 0.13)세라믹스의 전자전도특성 (Low-Temperature Electron Transport Properties of La2/3+xTiO3-δ (x = 0, 0.13))

  • 정우환
    • 한국재료학회지
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    • 제24권11호
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    • pp.604-609
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    • 2014
  • The thermoelectric power and dc conductivity of $La_{2/3+x}TiO_{3-{\delta}}$ (x = 0, 0.13) were investigated. The thermoelectric power was negative between 80K and 300K. The measured thermoelectric power of x = 0.13 increased linearly with increased temperatures and was represented by $S_0+BT$. The x = 0 sample exhibited insulating behavior, while the x = 0.13 sample showed metallic behavior. The electric resistivity of x = 0.13 had a linear temperature dependence at high temperatures and a T3/2 dependence below about 100K. On the other hand, the electric resistivity of x = 0 has a linear relation between $ln{\rho}/T$ and 1/T in the range of 200 to 300K, and the activation energy for small polaron hopping was 0.23 eV. The temperature dependence of thermoelectric power and the resistivity of x = 0 suggests that the charge carriers responsible for conduction are strongly localized. This temperature dependence indicates that the charge carrier (x = 0) is an adiabatic small polaron. These experimental results are interpreted in terms of spin (x = 0.13) and small polaron (x = 0) hopping of almost localized Ti 3d electrons.

Modeling of Degenerate Quantum Well Devices Including Pauli Exclusion Principle

  • 이은주
    • 대한전자공학회논문지SD
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    • 제39권2호
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    • pp.14-26
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    • 2002
  • Pauli 배타 원리를 적용한 축퇴 상태의 양자 우물 소자 모델링을 제안하였다. 양자 우물에서의 다중 에너지 부준위 각각에 대한 Boltzmann 방정식의 collision 항들을 Pauli 배타 원리를 적용하여 전개하고 이들을 Schrodinger 방정식과 Poisson 방정식과 결합하여 비선형적인 시스템의 모델을 설정하였다. 시스템의 해를 직접적으로 구하기 위하여 유한 차분법과 Newton-Raphson method를 적용하여 양자 우물의 다중 에너지 부준위 각각에 대한 캐리어 분포 함수를 구하였다. Si MOSFET의 inversion 영역에 본 모델을 적용하여 전자 밀도의 증가에 따라 양자 우물의 에너지 분포 함수가 Boltzmann 분포 함수의 형태로부터 Fermi-Dirac 분포 함수의 형태로 변화함을 제시하고, 소자 크기가 감소할수록 소자 모델링에 있어서의 Pauli 배타 원리의 중요성과 함께 본 모델의 정당함과 그 해석 방법의 효율성을 보여주었다.

국내 저비용항공사의 사전지식과 서비스품질이 고객만족과 재이용의도에 미치는 영향 (The Influence of Prior Knowledge and Service Quality on Customer Satisfaction and Reuse Intention in Korean Low Cost Carriers)

  • 김동수;이상학;이승창
    • 한국항공운항학회지
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    • 제25권4호
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    • pp.111-123
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    • 2017
  • This study aimed at finding the ways to improve competitiveness of Korean low cost carriers in the highly competitive air transport market by understanding the relation among the influence of prior knowledge, service quality on customer satisfaction and reuse intention. The result of the research is as the following. At first, the influence of prior knowledge on customer satisfaction and reuse intention was statistically significant. The result indicates that customers who have much prior knowledge are more likely to be satisfied and to reuse. Secondly, the test for finding out the influence of service quality on customer satisfaction and reuse intention was statistically significant also. Thirdly, the results revealed that customer satisfaction positively influenced reuse intension. The influence of service quality on customer satisfaction and reuse intention reached the same research result compared with the existing literature.

2001년 11월 오염시기와 2002년 봄 황사시기 제주도 고산에서의 잔류성 유기오염물질 농도 변화 (Concentration Variations of Persistent Organic Pollutants in Gosan, Jeju during the Polluted Period in November 2001 and the Yellow Sand Period in Spring 2002)

  • 김영성;김진영;김연제;문길주;문광주;한진석;김상우;윤순창;권성안
    • 한국대기환경학회지
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    • 제19권5호
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    • pp.469-490
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    • 2003
  • Atmospheric concentrations of persistent organic pollutants (POPs) were measured at Gosan, Jeju in November 2001 and spring 2002, each time for two weeks. Primary target pollutants were organochlorine pesticides, coplanar polychlorinated biphenyls (co- PCBs), and dioxin/furans listed in the Stockholm Convention adopted in May 2001. Polycyclic aromatic hydrocarbons (PAHs) were also measured in order to understand the overall characteristics of the POPs distribution as well as PM$_{2.5}$, a potent carrier of POPs. In the latter part of the measurement period of November 2001, almost every pollutant of combustion origin including dioxin/furans went high probably due to influence of emissions in the nearby area. The characteristics of atmospheric environment at Gosan in this period were rather close to urban areas far from those of a background area. A severe dust storm swept for three days at the end of the measurement period of spring 2002. However, changes in pollutant concentrations were relatively small except PM$_{10}$. Nevertheless, increases in particulate PAHs and OCDD (octachlorinated dibenzo-p-dioxins), mostly present in fine particles, were observed. Trends in organochlorine pesticide variations were mixed although possible volatilization of DDT residues from soil was inferred from the measurements of spring 2002.2.2.

로테르담 규칙상의 운송인의 책임 (The Liability and Limitation of Liability Regime in the Rotterdam Rules)

  • 이시환
    • 무역상무연구
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    • 제42권
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    • pp.189-210
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    • 2009
  • The United Nations General Assembly adopted the United Nations Convention on Contracts for the International Carriage of Goods Wholly or Partly by Sea(hereinafter referred to as "The Rotterdam Rules") on 11 December 2008. Rotterdam Rules aims to create a contemporary and uniform law providing for modern door-to-door container transport including an international sea leg. but not limited to port-to port carriage of goods. The structure of the liability regime in Rotterdam Rules are globally close to that of the Hague-Visby Rule even though it differs from that of the Hague-Visby Rules in some significant aspects. The Rotterdam Rules are very long. Therefore the Rotterdam Rules will be difficult to understand for even the skilled ship operator or owner or charterer or shipper or consignee or receiver because they are so complicated. This paper only seeks to highlight the salient features of the liability and limitation of liability regime under the Rotterdam Rules. It is expected that the harmonization and modernization of the international legal regime. coupled with the bold attempt to balance the carrier and cargo interests should lead to an overall reduction in transaction costs. increased predictability and greater commercial confidence for international business transactions.

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진공 증착법에 의한 다양한 Terbium Complexes 박막의 광학적 및 전기적 특성 연구 (Photoluminescent and Electroluminescent Characteristics of Thin Films of Terbium Complex with Various Ligand Prepared by Vacuum Evaporation Method)

  • 표상우;이명호;이한성;김영관;김정수
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 1998년도 추계학술대회 논문집
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    • pp.315-318
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    • 1998
  • Organic light-emitting diodes(OLEDs) or electroluminescent devices have attracted much attention because of their possible application as large-area light-emitting displays. Their structure was based on employing a multilayer device structure containing an emitting layer and a carrier transporting layer of suitable organic materials. In this study, several Tb complexes such as Tb(ACAC)$_3$(Phen), Tb(ACAC)$_3$(Phen-Cl) and Tb(TPB)$_3$(Phen) were synthesized and the photoluminescence(PL) and electroluminescence (EL) characteristics of their thin films were investigated by fabricating the devices having a structure of anode/HTL/terbium-oomplex/ETL/cathode, where TPD was used as an hole transporting and Alq$_3$ and TAZ-Si were used as an electron transporting materials. It was found that the photoluminescence(PL) and electroluminescence(EL) characteristics of these terbium complexes were dependent upon the ligands coordinated to terbium metal. Details on the explanation of electrical transport phenomena of the structure with I-V characteristics of the OLEDs using the trapped-charge-limited current(TCLC) model will be discussed.

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에피텍셜 베이스 실리콘 태양전지에서 Buried Contact 효과 (Effect of Buried Contact on the Epitaxial Base Silicon Solar Cell)

  • 장지근;임용규;정진철
    • 한국재료학회지
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    • 제13권5호
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    • pp.313-316
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    • 2003
  • The new epitaxial base cell as a high efficiency Si solar cell was fabricated and the effect of buried contact on the cell characteristics was investigated. In our experiments, the cell with buried contact showed the open circuit voltage of 0.62 V, the short circuit current of 40 mA, the fill factor of 0.7, and the efficiency of 10% under the incident light of AM-1 100 ㎽/$\textrm{cm}^2$. The insertion of buried contact in the epitaxial base structure brought the fabricated cell to the efficiency improvement of about 33%. The cell proposed in this paper has the structural superiority in the fabrication of high efficiency solar cell due to the carrier drift transport in the optical absorption region and the formation of back surface field by $p^{-}$ $p^{+}$ epitaxial base, and the reduction of emitter series resistance by n+ buried contact.

Interface Study of the Intermediate Connectors in Tandem Organic Devices

  • Tang, Jian-Xin;Fung, Man-Keung;Lee, Chun-Sing;Lee, Shuit-Tong
    • Journal of Information Display
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    • 제11권1호
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    • pp.1-7
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    • 2010
  • The intermediate connectors play crucial roles in the performance of tandem organic light-emitting diodes (OLEDs) because they are required to facilitate charge carrier transport and to guarantee transparency for light transmission and deposition compatibility. Understanding the physical properties of the intermediate connector is not only fundamentally important but is also crucial to developing high-efficiency organic devices with a tandem structure. In this study, several effective intermediate connectors in tandem OLEDs using a doped or non-doped organic p-n heterojunction were systematically investigated by studying their interfacial electronic structures and corresponding device characteristics. The working mechanisms of the intermediate connectors are discussed herein by referring to their relevant energy levels with respect to those of the neighboring organic layers. The factors affecting the operation of the intermediate connectors in tandem OLEDs, as demonstrated herein, provide guidance for the identification of new materials and device architectures for high-performance devices.