• BMB Reports
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• 제56권7호
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• pp.385-391
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• 2023

Aspartate-glutamate carrier 2 (AGC2, citrin) is a mitochondrial carrier expressed in the liver that transports aspartate from mitochondria into the cytosol in exchange for glutamate. The AGC2 is the main component of the malate-aspartate shuttle (MAS) that ensures indirect transport of NADH produced in the cytosol during glycolysis, lactate oxidation to pyruvate, and ethanol oxidation to acetaldehyde into mitochondria. Through MAS, AGC2 is necessary to maintain intracellular redox balance, mitochondrial respiration, and ATP synthesis. Through elevated cytosolic Ca²⁺ level, the AGC2 is stimulated by catecholamines and glucagon during starvation, exercise, and muscle wasting disorders. In these conditions, AGC2 increases aspartate input to the urea cycle, where aspartate is a source of one of two nitrogen atoms in the urea molecule (the other is ammonia), and a substrate for the synthesis of fumarate that is gradually converted to oxaloacetate, the starting substrate for gluconeogenesis. Furthermore, aspartate is a substrate for the synthesis of asparagine, nucleotides, and proteins. It is concluded that AGC2 plays a fundamental role in the compartmentalization of aspartate and glutamate metabolism and linkage of the reactions of MAS, glycolysis, gluconeogenesis, amino acid catabolism, urea cycle, protein synthesis, and cell proliferation. Targeting of AGC genes may represent a new therapeutic strategy to fight cancer.

• 한국항공운항학회지
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• 제22권1호
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• pp.32-43
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• 2014

Worldwide, air transport demand of this century is expanding rapidly, and each countries' demand is also increasing. Thus a number of low-cost carriers emerged in existing air transportation business sector and airman qualification check work regarding aviation safety management is increasing too. As the remedy for the result of aviation safety audit by ICAO and FAA in 2001 that governmental activity for aviation safety had been performed by a small number of aviation safety inspectors, airman qualification inspection system implemented by airlines was improved and the government has established the system that authorized airman qualification inspectors check airmen qualification with airlines according to the international trend. This study suggests the need of improvement of airman qualification inspection system that existing inspection system as the means of safety management can be transferred to Operations Safety Inspection(OSI) activity which is compliant with international standards.

• 한국인쇄학회지
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• 제8권1호
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• pp.1-20
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• 1990

$\alpha$,$\beta$,$\varepsilon$ type copper phthalocy $\alpha$,$\beta$,$\varepsilon$ type copper phthalocyanine(CuPc) pigment was purified by a simple train sublimation technique. The layered photoconductor was made with $\varepsilon$ type CuPc as a carrier generation layer(CGL) and polyvinly carvazol(PVCz) as a carrier transport layer(CLT). A CGL of CuPc was electrochemical deposited on an Al substrate used as cathode in pigment dispersion solutions. a CTL of PVCz pwas spin coated on $\varepsilon$ type CuPc thin film by a spin coater. The effect of sonication time, electrophotographic property of the layered photoconductor were studied with surface coverage, surface potential and sensitivity.

• 한국전기전자재료학회논문지
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• 제14권10호
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• pp.792-795
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• 2001

we present a electrical transport(resistivity, Hall effect) measurements in varying temperature ranges between 78K and 300K on HoSi$_2$ composites by hot-pressed sintering. It has been found that this sintered HoSi$_2$ has a orthorhombic structure, and lattices constant is a=9.8545$\AA$, b=7.7935$\AA$, c=7.8071$\AA$. The measured electrical resistivity is about 1.608$\Omega$ cm and carrier mobility is about 6.9$\times$10$^{1}$cm $^{2}$V.sec at low room temperature. The Hall effect shows a n-type conductivity in the sintered HoSi$_2$.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2002년도 하계학술대회 논문집 Vol.3 No.2
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• pp.1026-1029
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• 2002

We report the electric properties of organic light emitting diodes (OLEDs) by controlling the carrier density according to the crystalline of copper(II) phthalocyanine(CuPc) and the irradiation light intensity. OLEDs were constructed with indium tin oxaide (ITO)/CuPc/triphenyl-diamin (TPD)/tris-(8-hydroxyquinoline)aluminum (Alq3)/Al. The transport properties of OLEDs were changedby the heat-treatments of CuPc. The irradiation of red and blue light exciting CuPc, TPD and Alq3. And then we observed the carrier density of OLEDs.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2006년도 추계학술대회 논문집 Vol.19
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• pp.207-207
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• 2006

We investigated the effects of hydrogen addition to the growth process of SiC single crystal using sublimation physical vapor transport(PVT) techniques. Hydrogen was periodically added to an inert gas for the growth ambient during the SiC bulk growth Grown 2"-SiC single crystals were proven to be the polytype of 6H-SiC and carrier concentration levels of about $10^{17}/cm^3$ was determined from Hall measurements. As compared to the characteristics of SiC crystal grown without using hydrogen addition, the SiC crystal without definitely exhibited lower carrier concentration and lower microplpe density as well as reduced growth rate.

• 한국전기전자재료학회논문지
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• 제19권1호
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• pp.13-17
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• 2006

The one-dimensional ZnO nanostructures prepared through thermal evaporation under various cooling down procedures by changing the flow rates of the carrier gas and the reactive gas were investigated. The nanorod structures were changed into the nanonail types with a broad head through the reduction of the flow rate of the carrier gas. The decrease of the reactive gas reduced the length of the nail heads due to the limited mass transport of reactive gas. The intensity ratio of the ultraviolet emission/green emission of photoluminescence was proportional to the length of the broad head showing a larger surface area. The vertically aligned nanostructures were grown along the [0001] direction of ZnO regardless of the aligned directions. The crystal direction of the nanostructures was determined by that of the initial ZnO crystal.

• 전자공학회논문지D
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• 제35D권4호
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• pp.53-60
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• 1998

The purpose of this paper is to meausre the electrophotographic characteristics of double-layered organic photoreceptor and to evaluate an application for the laser beam printer drum. The characte carrier generation layer(CGL) of double-layered photoreceptor was fabricated with .tau.-H$_{2}$Pc which has high photosensitivity in the near-infrareed region(thickness is about 0.3.mu.m), and Oxadiazole derivative was chosen as a charge carrier transport layer(CTL) because of its high hole mobility. To observe the electrophotographic characteristics of the photoreceptor, we measured the charge acceptance, dark-decay ratio, residual potential after light irradiation. From the result of this study, proper thickness of CTL was about 10.mu.m. Also it's realized that electrophotographic characteristics of the photoreceptor were depend on the thickness of the CTL and the initial surface potential.

• 한국마린엔지니어링학회:학술대회논문집
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• 한국마린엔지니어링학회 2005년도 후기학술대회논문집
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• pp.94-97
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• 2005

Seaworthiness is an important part of the carrier's obligation in the carriage of goods by sea. Especially seaworthiness of the ship is one of the most important obligations of the carrier in the field of international transport law. Therefore it will be important to examine the expected impacts by adopting a continuing duty of seaworthiness in UNCITRAL Draft Instrument from the Korea point of view because Korean Commercial Act provides that carriers are only obliged to exercise due diligence to make the ship seaworthy before and at the beginning of the voyage. This paper examines the concept of the seaworthiness and analyses the provisions of the Draft Instrument for the duty of seaworthiness in comparison with the Korean Commercial Act.

• 대한전자공학회논문지
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• 제24권4호
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• pp.625-630
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• 1987

Thermal evaporated SiO rf sputtered SiO2 thin films were most widely used to the gate oxide of TFTs. In this paper, the difference of trap density and distribution between SiO2 and SiO2 film were studied. TFTs using SiO and SiO2 thin film for the gate oxide were fabricated. The output characteirstics of TFTs and the time dpendencd of the leakage current were measured. Models of the carrier transport and carrier trapping in TFT were proposed. The trap density was obtained by substituting measured value for the equation derived from the proposed model. It was found that rf sputtered SiO2 had more traps at interface than thermal evaporated SiO.