• 제목/요약/키워드: carrier model

검색결과 752건 처리시간 0.023초

On the System Modeling and Capacity Scaling Law in Underwater Ad Hoc Networks (수중 애드 혹 네트워크에서의 시스템 모델링 및 용량 스케일링 법칙에 대하여)

  • Shin, Won-Yong;Kim, A-Jung
    • The Journal of Korean Institute of Communications and Information Sciences
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    • 제36권4B호
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    • pp.422-428
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    • 2011
  • In this paper, we introduce system and channel modeling for an underwater ad hoc acoustic network with n regularly located nodes, and then analyze capacity scaling laws based on the model. A narrow-band model is assumed where the carrier frequency is allowed to scale as a function of n. In the network, we characterize in attenuation parameter that depends on the frequency scaling as well as the transmission distance. A cut-set upper bound on the throughput scaling is then derived in extended networks having unit node density. Our result indicates that the upper bound is inversely proportional to the attenuation parameter, thus resulting in a power-limited network. Furthermore, we describe an achievable scheme based on the simple nearest-neighbor multi-hop (MH) transmission. It is shown under extended networks that the MH scheme is order-optimal for all the operating regimes expressed as functions of the attenuation parameter.

A Validated Solution for the Threat of Ionosphere Spatial Anomalies to Ground Based Augmentation System Users

  • Pullen, Sam;Lee, Ji-Yun;Datta-Barua, Seebany;Park, Young-Shin;Zhang, Godwin;Enge, Per
    • Proceedings of the Korean Institute of Navigation and Port Research Conference
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    • 한국항해항만학회 2006년도 International Symposium on GPS/GNSS Vol.1
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    • pp.9-14
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    • 2006
  • This paper develops a complete methodology for the mitigation of ionosphere spatial anomalies by GBAS systems fielded in the Conterminous U.S. (CONUS). It defines an ionosphere anomaly threat model based on validated observations of unusual ionosphere events in CONUS impacting GBAS sites in the form of a linear ‘wave front’ of constant slope and velocity. It then develops a simulation-based methodology for selecting the worst-case ionosphere wave front impact impacting two satellites simultaneously for a given GBAS site and satellite geometry, taking into account the mitigating effects of code-carrier divergence monitoring within the GBAS ground station. The resulting maximum ionosphere error in vertical position (MIEV) is calculated and compared to a unique vertical alert limit, or $VAL_{H2,I}$, that applies to the special situation of worst-case ionosphere gradients. If MIEV exceeds $VAL_{H2,I}$ for one or more otherwise-usable subset geometries (i.e., geometries for which the 'normal' vertical protection level, or $VPL_{H0}$, is less than the 'normal' VAL), the broadcast ${\sigma}_{pr_{-}gnd}$ and/or ${\sigma}_{vig}$ must be increased such that all such potentially-threatening geometries have VPL$_{H0}$ > VAL and thus become unavailable. In addition to surveying all aspects of the methods used to generate the required ${\sigma}_{pr_{-}gnd}$ and ${\sigma}_{vig}$ inflation factors for CONUS GBAS sites, related methods for deriving similar results for GBAS sites outside CONUS are suggested.

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Improved Production of Long-Chain Fatty Acid in Escherichia coli by an Engineering Elongation Cycle During Fatty Acid Synthesis (FAS) Through Genetic Manipulation

  • Jeon, Eunyoung;Lee, Sunhee;Lee, Seunghan;Han, Sung Ok;Yoon, Yeo Joon;Lee, Jinwon
    • Journal of Microbiology and Biotechnology
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    • 제22권7호
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    • pp.990-999
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    • 2012
  • The microbial biosynthesis of fatty acid of lipid metabolism, which can be used as precursors for the production of fuels of chemicals from renewable carbon sources, has attracted significant attention in recent years. The regulation of fatty acid biosynthesis pathways has been mainly studied in a model prokaryote, Escherichia coli. During the recent period, global regulation of fatty acid metabolic pathways has been demonstrated in another model prokaryote, Bacillus subtilis, as well as in Streptococcus pneumonia. The goal of this study was to increase the production of long-chain fatty acids by developing recombinant E. coli strains that were improved by an elongation cycle of fatty acid synthesis (FAS). The fabB, fabG, fabZ, and fabI genes, all homologous of E. coli, were induced to improve the enzymatic activities for the purpose of overexpressing components of the elongation cycle in the FAS pathway through metabolic engineering. The ${\beta}$-oxoacyl-ACP synthase enzyme catalyzed the addition of acyl-ACP to malonyl-ACP to generate ${\beta}$-oxoacyl-ACP. The enzyme encoded by the fabG gene converted ${\beta}$-oxoacyl-ACP to ${\beta}$-hydroxyacyl-ACP, the fabZ catalyzed the dehydration of ${\beta}$-3-hydroxyacyl-ACP to trans-2-acyl-ACP, and the fabI gene converted trans-2-acyl-ACP to acyl-ACP for long-chain fatty acids. In vivo productivity of total lipids and fatty acids was analyzed to confirm the changes and effects of the inserted genes in E. coli. As a result, lipid was increased 2.16-fold higher and hexadecanoic acid was produced 2.77-fold higher in E. coli JES1030, one of the developed recombinants through this study, than those from the wild-type E. coli.

Precise positioning and error analysis method using GPS and GLONASS (GPS와 GLONASS를 동시에 이용하는 정밀 측위 및 오차해석)

  • Park, Chan-Sik;Song, Ha-Pyo
    • Journal of the Korean Society for Aeronautical & Space Sciences
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    • 제32권5호
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    • pp.74-83
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    • 2004
  • The carrier phase measurements from GPS and GLONASS have different characteristics and therefore, have to be processed with different methods to provide precise positions or attitudes. In this contribution, at first, a measurement model is derived which can be used to not only GLONASS only applications but also both GPS and GLONASS applications. And then an error analysis of the proposed method performed using the derived model to derive analytic relationships between GDOP, PDOP and RGDOP. Finally, an integer ambiguity resolution method which was used in GPS is expanded to GPS and GLONASS. The proposed results can be directly applied to the design and analysis of GLONASS receiver and application programs. Furthermore, it is expected that the suggested method can also be effectively applied to combine the characteristically different measurements from the future satellite navigation systems such as GPS modernization, Galileo and QZSS.

Analysis of Dimension Dependent Subthreshold Swing for Double Gate FinFET Under 20nm (20nm이하 이중게이트 FinFET의 크기변화에 따른 서브문턱스윙분석)

  • Jeong Hak-Gi;Lee Jong-In;Joung Dong-Su
    • Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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    • 한국해양정보통신학회 2006년도 춘계종합학술대회
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    • pp.865-868
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    • 2006
  • In this paper, the subthreshold swing has been analyzed for double gate FinFET under channel length of 20nm. The analytical current model has been developed, including thermionic current and tunneling current models. The potential distribution by Poisson equation and carrier distribution by Maxwell-Boltzman statistics are used to calculate thermionic emission current, and WKB(Wentzel-Framers-Brillouin) approximation to tunneling current. The cutoff current is obtained by simple adding two currents since two current is independent. The subthreshold swings by this model are compared with those by two dimensional simulation and two values are good agreement. Since the tunneling current increases especially under channel length of 10nm, the characteristics of subthreshold swing is degraded. The channel and gate oxide thickness have to be fabricated as thin as possible to decrease this short channel effects and this process has to be developed. The subthreshold swings as a function of channel doping concentrations are obtained.

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Analysis of Dimension Dependent Threshold Voltage Roll-off for Nano Structure Double Gate FinFET (나노구조 이중게이트 FinFET의 크기변화에 따른 문턱전압이동 분석)

  • Jeong Hak-Gi;Lee Jae-Hyung;Joung Dong-Su
    • Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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    • 한국해양정보통신학회 2006년도 춘계종합학술대회
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    • pp.869-872
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    • 2006
  • In this paper, the threshold voltage roll-off been analyzed for nano structure double gate FinFET. The analytical current model has been developed , including thermionic current and tunneling current models. The potential distribution by Poisson equation and carrier distribution by Maxwell-Boltzman statistics are used to calculate thermionic emission current, and WKB(Wentzel- framers-Brillouin) approximation to tunneling current. The threshold voltage roll-offs are obtained by simple adding two currents since two current is independent. The threshold voltage roll-off by this model are compared with those by two dimensional simulation and two values are good agreement. Since the tunneling current increases especially under channel length of 10nm, the threshold voltage roll-off Is very large. The channel and gate oxide thickness have to be fabricated as thin as possible to decrease this short channel effects and this process has to be developed.

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Analysis of Threshold Voltage and DIBL Characteristics for Double Gate MOSFET Based on Scaling Theory (스켈링 이론에 따른 DGMOSFET의 문턱전압 및 DIBL 특성 분석)

  • Jung, Hakkee
    • Journal of the Korea Institute of Information and Communication Engineering
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    • 제17권1호
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    • pp.145-150
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    • 2013
  • This paper has presented the analysis for threshold voltage and drain induced barrier lowering among short channel effects occurred in subthreshold region for double gate(DG) MOSFET as next-generation devices, based on scaling theory. To obtain the analytical solution of Poisson's equation, Gaussian function has been used as carrier distribution to analyze closely for experimental results, and the threshold characteristics have been analyzed for device parameters such as channel thickness and doping concentration and projected range and standard projected deviation of Gaussian function. Since this potential model has been verified in the previous papers, we have used this model to analyze the threshold characteristics. As a result to apply scaling theory, we know the threshold voltage and drain induced barrier lowering are changed, and the deviation rate is changed for device parameters for DGMOSFET.

Case Study for Ship Ad-hoc Networks under a Maritime Channel Model in Coastline Areas

  • Su, Xin;Yu, HaiFeng;Chang, KyungHi;Kim, Seung-Geun;Lim, Yong-Kon
    • KSII Transactions on Internet and Information Systems (TIIS)
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    • 제9권10호
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    • pp.4002-4014
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    • 2015
  • ITU-R M.1842-1, as a well-known specification dedicated to maritime mobile applications, has standardized wireless transmission protocols according to the particular characteristics of a maritime communications scenario. A time division multiple access (TDMA) frame structure, along with modulation schemes to achieve a high data rate, has been described clearly in ITU-R M.1842-1. However, several specification items are still under "to be decided" status, which brings ambiguity to research works. In addition, the current version of ITU-R M.1842-1 is focused mainly on maritime transmissions in open-sea areas, where the cyclic prefix (CP) is set to zero and only 16-QAM is used in the multi-carrier (MC) system. System performance might be dramatically degraded in coastline areas due to the inter-symbol interference (ISI) caused by selective fading. This is because there is a higher probability that the signal will be reflected by obstacles in coastline areas. In this paper, we introduce the transmission resource block (TRB) dedicated to ITU-R M.1842-1 for a ship ad-hoc network (SANET), where the pilot pattern of TRB is based on the terrestrial trunked radio (TETRA). After that, we evaluated SANET performance under the maritime channel model in a coastline area. In order to avoid noise amplification and to overcome the ISI caused by selective fading, several strategies are suggested and compared in the channel estimation and equalization procedures, where the link-level simulation results finally validate our proposals.

Drivers' Satisfaction of Protected/Permitted Left Turn(PPLT) Signal Operation (보호/비보호 좌회전 신호운영(PPLT) 만족도 분석)

  • Jang, Tae-Youn;Oh, Do-Hyoung
    • The Journal of The Korea Institute of Intelligent Transport Systems
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    • 제14권1호
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    • pp.46-56
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    • 2015
  • The purpose of this study is to find out the effectiveness of drivers' satisfaction over protected and permissive left-turn (PPLT) traffic signal operation. A structural equation model was established for analyzing the effectiveness of various drivers' factors (e.g., personal characteristics, driving attitude, expectation to PPLT, etc.) on the PPLT preference based on questionnaire survey. As a result, the analysis is satisfied with the critical values, such as Q value, RMR, GIF, AGIF, and NFI. The study reveals that PPLT preference increases in case of driver who is male with long social carrier related to transportation affaire and long driving experience without traffic accident involvement. Moreover, PPLT preference increases as the expectation of PPLT to improvement of traffic safety, traffic operation, and traffic environment increases. Therefore, it is recommended that the PPLT should be preferentially operated in urban area of less traffic accidents and the promotion of PPLT be actively conducted for positive effectiveness.

Analysis of Dimension-Dependent Threshold Voltage Roll-off and DIBL for Nano Structure Double Gate FinFET (나노구조 이중게이트 FinFET의 크기변화에 따른 문턱전압이동 및 DIBL 분석)

  • Jung, Hak-Kee
    • Journal of the Korea Institute of Information and Communication Engineering
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    • 제11권4호
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    • pp.760-765
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    • 2007
  • In this paper, the threshold voltage roll-off and drain induced barrier lowering(DIBL) have been analyzed for nano structure double gate FinFET. The analytical current model has been developed, including thermionic current and tunneling current models. The potential distribution by Poisson equation and carrier distribution by Maxwell-Boltzman statistics were used to calculate thermionic omission current, and WKB(Wentzel- Kramers-Brillouin) approximation to tunneling current. The threshold voltage roll-offs are obtained by simple adding two currents since two current is independent. The threshold voltage roll-off by this model are compared with those by two dimensional simulation and two values are good agreement. Since the tunneling current increases especially under channel length of 10nm, the threshold voltage roll-off and DIBL are very large. The channel and gate oxide thickness have to be fabricated as thin as possible to decrease this short channel effects, and this process has to be developed.