• 한국신재생에너지학회:학술대회논문집
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• 2009.06a
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• pp.28-30
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• 2009

이종접합태양전지에서 p a-Si:H/c-Si의 p a-Si:H의 증착 조건인 $H_2/SiH_4$ 비율, $B_2H_6$의 농도를 변화 시키며 실험하여 이 따라 계면 특성 변화를 연구하였다. pa-Si:H의 $H_2/SiH_4$ 비율이 상승할수록 carrier lifetime이 증가하다 다시 감소하는 경향을 나타내었다. 이는 $H_2/SiH_4$의 비율 중 효과적으로 웨이퍼표면을 효과적으로 passivation하는 지점이 있는 것으로 보인다. $B_2H_6$의 농도는 상승할수록 carrier lifetime이 줄어드는 경향을 보였다. $B_2H_6$에서 농도가 올라감에 웨이퍼 표면의 defect로 작용했을 것으로 생각된다. 이에서 몇몇의 조건으로 태양전지를 제작한 결과 $H_2/SiH_4$ 비율에 따라서는 carrier lifetime은 효율에 그 영향이 미미한 것으로 조사되었고, $B_2H_6$의 농도가 낮을수록 개방전압은 상승하는 결과를 얻어 도핑 농도가 효율에 직접적인 형향을 주는 것으로 나타났다.

• 전기의세계
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• v.26 no.5
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• pp.83-89
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• 1977

This paper described the minority carrier lifetime in Si epitaxial layer, and also the voltage (V) versus current (I) characteristics of high resistivity Si epitaxial layer0substrate junction. The measured lifetime in Si epi-layer was much shorter than in bulk, and the temperature dependence of lifetime was found to agree well with Shockley-Read model of recombination which applies to high resistivity n-type materials. The V-I curve showed; an ohmic region (I.var.V), a sublinear region (I.var.V$^{1}$2/), a space charge limited current region (I.var.V$^{2}$), and finally a negative resistance region. We investigated these phenomena by the theory of the relaxation semiconductor.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2005.11a
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• pp.47-48
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• 2005

The moving photocarrier grating(MPG) technique for the determination of the carrier mobilities and the recombination lifetime in a-Se:As films have been studied. The electron and hole drift mobility and the recombination lifetime of a-Se films with arsenic (As) additions have been obtained. We have found an increase in hole drift mobility and recombination lifetime, especially when 0.3% As is added into a-Se film. However, the electron mobility exhibits no observable change up to 0.5% As addition in a-Se films.0.3% As added a-Se film also exhibits the maximum short circuit current densities per laser intensity of $5.29\times10^{-7}$ A/W.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2006.04a
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• pp.85-88
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• 2006

The transport properties of amorphous selenium typical of the material used in direct conversion x-ray imaging devices are reported. The effects of As addition on the carrier mobility and recombination lifetime in amorphous selenium (a-Se) films have been studied using the moving photocarrier grating (MPG) technique. We have found an increase in hole drift mobility and recombination lifetime, especially when 0.3% As is added into a-Se film, whereas electron mobility decreases with As addition due to the defect density. The transport properties for As doped a-Se films obtained by using MPG technique have been compared with the drift mobilities of holes and electrons obtained by time of flight (TOF) measurement.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.9 no.2
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• pp.157-161
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• 1999

We investigated the effect of mechanical back side damage in Czochralski silicon wafer. The intensity of mechanical damage was evaluated by minority carrier recombination lifetime by laser excitation/microwave reflection photoconductance decay ($\mu$-PCD) technique, wet oxidation/preferential etching methods, near surface micro defect (NSMD) analysis, and X-ray section topography. The data indicate that the higher the mechanical damage intensity, the lower the minority carrier lifetime, and NSMD density increased proportionally, also correlated to the oxidation induced stacking fault (OISF) density. Thus, NSMD technique can be used separately from conventional etching method in OISF measurement.

• Proceedings of the Korean Vacuum Society Conference
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• 2016.02a
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• pp.304.1-304.1
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• 2016

We have investigated the effect of plasma nitridation of atomic layer deposited-Al2O3 films of monocrystalline Si wafers and the thermal properties of nitridated Al2O3 films. Nitridation was performed on Al2O3 to form aluminum oxynitride (AlON) using NH3 plasma treatment in a plasma-enhanced chemical vapor deposition and it was conducted at temperature of $400^{\circ}C$ with various plasma power condition. After nitridation, we performed firing and forming gas annealing (FGA). For each step, we have observed the minority carrier lifetime and the implied Voc by using quasi-Steady-State photoconductance (QSSPC). We confirmed a tendency to increase the minority carrier lifetime and the implied Voc after the nitridation. On the other hand, the minority carrier lifetime and the implied Voc was decreased after Firing and forming gas annealing (FGA). To get more information, we studied properties of the plasma treated Al2O3 films by using Secondary Ion Mass Spectroscopy (SIMS) and X-ray Photoelectron Spectroscopy (XPS).

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.8 no.1
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• pp.117-123
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• 1998

We investigated the effect of mechanical backside damage in Czochralski grown silicon wafer. The intensity of mechanical damage was evaluated by minority carrier recombination lifetime by laser excitation/microwave reflection photoconductivity decay method, photo-acoustic displacement method, X-ray section topography, and wet oxidation/preferential etching methods. The data indicate that the higher the mechanical damage intensity, the lower the minority carrier lifetime, and the photo-acoustic displacement values increased proportionally, and it was at Grade 1: Grade 2:Grade 3 = 1:19.6:41 that the normalized relative quantization ratio of excess photo-acoustic displacement in damaged wafer was calculated, which are normalized to the excess PAD from sample Grade 1.

• 한국신재생에너지학회:학술대회논문집
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• 2009.06a
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• pp.172-175
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• 2009

n-type crystalline silicon wafers were passivated with intrinsic a-Si:H thin films on both sides using HWCVD. Minority carrier lifetime measurement was used to verify interface passivation properties between a-Si:H thin film and crystalline Si wafer. Thin film interface characteristics were investigated depending on $H_2/SiH_4$ ratio and hot wire deposition temperature. Vacuum annealing were processed after deposition a-Si:H thin films on both sides to investigate thermal effects from post process steps. We noticed the effect of interface passivation properties according to $H_2/SiH_4$ ratio and hot wire deposition temperature, and we had maximum point of minority carrier lifetime at H2/SiH4 10 ratio and $1600^{\circ}C$ wire temperature.

• Journal of the Microelectronics and Packaging Society
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• v.22 no.4
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• pp.111-115
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• 2015

To improve the efficiency of the Si solar cell, high minority carrier life time is required. Therefore, the passivation technology is important to eliminate point defects on the silicon surface, causing the loss of minority carrier recombination. PECVD or post-annealing of thermally-grown $SiO_2$ is commonly used to form the passivation layer, but a high-temperature process and low thermal stability is a critical factor of low minority carrier lifetime. In this study, atomic layer deposition was used to grow the $Al_2O_3$ passivation layer at low temperature process. $Al_2O_3$ was selected as a passivation layer which has a low surface recombination velocity because of the fixed charge density. For the high charge density, an improved minority carrier lifetime, and a low surface recombination, nitrogen was doped in the $Al_2O_3$ thin film and the improvement of passivation was studied.

• Proceedings of the IEEK Conference
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• 1999.06a
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• pp.970-973
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• 1999

When the size of the device is decreased, the hot carrier degradation presents a severe problem for long-term device reliability. In this paper we fabricated & tested the 0.26${\mu}{\textrm}{m}$ NMOSFET with wet gate oxide and nitride oxide gate to compare that the characteristics of hot carrier effect, charge to breakdown, transistor Id_Vg curve and charge trapping using the Hp4145 device tester As a result we find that the characteristics of nitride oxide gate device better than wet gate oxide device, especially a hot carrier lifetime(nitride oxide gate device satisfied 30years, but the lifetime of wet gate oxide was only 0.1year), variation of Vg, charge to breakdown and charge trapping etc.