Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference (한국전기전자재료학회:학술대회논문집)
- 2005.11a
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- Pages.47-48
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- 2005
The moving photocarrier grating technique for the determination of transport parameters in a-Se:As films
- Park, Chang-Hee (School of Computer Aided Science, Inje University) ;
- Lee, Kwang-Sei (School of Computer Aided Science, Inje University) ;
- Kim, Jae-Hyung (School of Computer Aided Science, Inje University) ;
- Nam, Sang-Hee (Medical image Research Lab., Inje University)
- Published : 2005.11.10
Abstract
The moving photocarrier grating(MPG) technique for the determination of the carrier mobilities and the recombination lifetime in a-Se:As films have been studied. The electron and hole drift mobility and the recombination lifetime of a-Se films with arsenic (As) additions have been obtained. We have found an increase in hole drift mobility and recombination lifetime, especially when 0.3% As is added into a-Se film. However, the electron mobility exhibits no observable change up to 0.5% As addition in a-Se films.0.3% As added a-Se film also exhibits the maximum short circuit current densities per laser intensity of