• 대한전자공학회논문지SD
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• 제41권7호
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• pp.21-29
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• 2004

본 논문에서는 Dual oxide를 갖는 Nano-scale CMOSFET에서 각 소자의 Hot carrier 특성을 분석하여 두 가지 중요한 결과를 나타내었다. 하나는 NMOSFET Thin/Thick인 경우 CHC stress 보다는 DAHC stress에 의한 소자 열화가 지배적이고, Hot electron이 중요하게 영향을 미치고 있는 반면에, PMOSFET에서는 특히 Hot hole에 의한 영향이 주로 나타나고 있다는 것이다. 다른 하나는, Thick MOSFET인 경우 여전히 NMOSFET의 수명이 PMOSFET의 수명에 비해 작지만, Thin MOSFET에서는 오히려 PMOSFET의 수명이 NMOSFET보다 작다는 것이다. 이러한 분석결과는 Charge pumping current 측정을 통해 간접적으로 확인하였다. 따라서 Nano-scale CMOSFET에서의 NMOSFET보다는 PMOSFET에 대한 Hot camel lifetime 감소에 관심을 기울여야 하며, Hot hole에 대한 연구가 진행되어야 한다고 할 수 있다.

• 한국전기전자재료학회논문지
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• 제33권3호
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• pp.169-172
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• 2020

In this paper, the effect of hot carrier injection on an n-bulk fin field-effect transistor (FinFET) is analyzed. The hot carrier injection method is applied to determine the performance change after injection in two ways, channel hot electron (CHE) and drain avalanche hot carrier (DAHC), which have the greatest effect at room temperature. The optimum condition for CHE injection is V_G=V_D, and the optimal condition for DAHC injection can be indirectly confirmed by measuring the peak value of the substrate current. Deterioration by DAHC injection affects not only hot electrons formed by impact ionization, but also hot holes, which has a greater impact on reliability than CHE. Further, we test the amount of drain voltage that can be withstood, and extracted the lifetime of the device. Under CHE injection conditions, the drain voltage was able to maintain a lifetime of more than 10 years at a maximum of 1.25 V, while DAHC was able to achieve a lifetime exceeding 10 years at a 1.05-V drain voltage, which is 0.2 V lower than that of CHE injection conditions.

• 한국정보통신학회:학술대회논문집
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• 한국해양정보통신학회 2002년도 추계종합학술대회
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• pp.800-803
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• 2002

The MONOS capacitor are fabricated to investigate the carrier trapping due to Fowler-Nordheim tunneling injection. The carrier trapping in scaled multi-dielectric(ONO) depends on the nitride and Op oxide thickness under Fowler_Nordheim tunneling injection. Carriers captured at nitride film could not escape from nitride to gate, but be captured at top oxide and nitride interface traps because of barrier height of top oxide. Therefore, it is expected that the MONOS memory devices using multi dielectric films enhance memory effect and have a long memory retention characteristic.

• Journal of Electrical Engineering and Technology
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• 제13권6호
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• pp.2421-2424
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• 2018

A direct measurement of an initiation carrier injection for a low voltage discharge is presented. A self-sustained pulsed discharge is utilized to characterize electrical responses of a glow discharge for varying amounts of injected initiation carriers. It is clearly demonstrated that the initiation carrier injection affects the ignition time and the breakdown voltage of the primary discharge. An abrupt reduction in the breakdown voltage for a $300{\mu}m$ gap pin-plate discharge is observed when a threshold carrier density of $3{\times}10^{11}cm^{-3}$ is injected and the breakdown voltage continues to decrease to 250 V with increasing the initiation carrier injection beyond the threshold density.

• 한국산학기술학회논문지
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• 제14권8호
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• pp.3625-3630
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• 2013

도어 모듈은 모듈화의 대표적인 예로 여러 부품들은 모듈형태로 완성하여 완성차 업체의 원가절감 및 조립시간 단축, 품질 향상 등에 큰 기여를 이루었다. 주요 부품중의 하나인 Door carrier plate는 주로 steel을 이용한 press 성형이 주였으나 최근에는 PP-LFT(유리 장섬유 강화PP)를 사용한 사출 공법을 적용함으로써 형상자유도를 높혀 모듈에 부착되는 많은 종류의 부품들을 통합할 수 있게 되었으며 중량 절감을 이룰 수 있게 되었다. 하지만 사출 성형시 제품의 형상 및 gate위치 설정의 한계성과, LFT의 특성에 의하여 변형이 비교적 심해 일반적으로 시사출 진행 후 보상 가공을 진행하여 조립성을 개선한다. 이러한 사후 수정 공정은 금형의 품질 저하 및 생산원가 상승의 주요인이다. 부분적으로 사출 CAE를 적용하여 warpage정도를 예측하나 그 신뢰성 확보에 어려움을 겪고 있다. 따라서 LFT를 사용하는 Door carrier plate에 대한 해석 신뢰성을 확보할 수 있는 기법으로 hyper-mesh에서 1차 mesh작업 후 moldlfow 자체 tool을 이용하여 mesh의 두께 구현성을 높혔으며, fiber orientation해석을 위하여 ARD-RSC model을 적용하였다.

• 전기학회논문지
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• 제67권1호
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• pp.82-86
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• 2018

Low voltage atmospheric plasma generation using DBD Initiation carrier injection is reported. DBD afterglow was used as initiation carriers prior to a primary discharge and a significant reduction in the breakdown voltage of atmospheric discharge was observed when sufficient initiation carriers were provided. Quantative correlation study between the breakdown voltage and the initiation carriers suggests that the atmospheric breakdown voltage reduces to only half of the breakdown voltage for Townsend regime. Also, use of DBD initiation carrier injection likely offers better device reliability by protecting electrodes with a dielectric layer and thus suppressing electrode wear.

• Journal of Power Electronics
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• 제16권5호
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• pp.1791-1801
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• 2016

This paper considers a carrier based signal injection method for use in the three shunt sensing inverter (TSSI) for sensorless motor control. It also analyzes the loss according to the injection axis of the voltage signal. To remove both the phase current and rotor position sensors, a sensorless method and a phase current reconstruction method can be simultaneously considered. However, an interaction between the two methods can be incurred when both methods inject voltage signals simultaneously. In this paper, a signal injection based sensorless method with the 120° OFF Discontinuous PWM (DPWM) is implemented in a TSSI to avoid this interaction problem. Since one leg does not have a switching event for one sampling period in the 120° OFF DPWM, the switching loss is altered according to the injection axis. The switching loss in the d-axis injection case can be up to 32% larger than that in the q-axis injection case. Other losses according to the injection axis are also analyzed.

• The Korean Journal of Pain
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• 제31권2호
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• pp.102-108
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• 2018

Background: Nefopam is a non-opioid, non-steroidal analgesic drug with fewer adverse effects than narcotic analgesics and nonsteroidal anti-inflammatory drugs, and is widely used for postoperative pain control. Because nefopam sometimes causes side effects such as nausea, vomiting, somnolence, hyperhidrosis and injection-related pain, manufacturers are advised to infuse it slowly, over a duration of 15 minutes. Nevertheless, pain at the injection site is very common. Therefore, we investigated the effect of warmed carrier fluid on nefopam injection-induced pain. Methods: A total of 48 patients were randomly selected and allocated to either a control or a warming group. Warming was performed by diluting 40 mg of nefopam in 100 ml of normal saline heated to $31-32^{\circ}C$ using two fluid warmers. The control group was administered 40 mg of nefopam dissolved in 100 ml of normal saline stored at room temperature ($21-22^{\circ}C$) through the fluid warmers, but the fluid warmers were not activated. Results: The pain intensity was lower in the warming group than in the control group (P < 0.001). The pain severity and tolerance measurements also showed statistically significant differences between groups (P < 0.001). In the analysis of vital signs before and after the injection, the mean blood pressure after the injection differed significantly between the groups (P = 0.005), but the heart rate did not. The incidence of hypertension also showed a significant difference between groups (P = 0.017). Conclusions: Use of warmed carrier fluid for nefopam injection decreased injection-induced pain compared to mildly cool carrier fluid.

• 전력전자학회논문지
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• 제23권2호
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• pp.139-146
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• 2018

This work puts forward a theoretical analysis on position estimation performance of interior permanent magnet synchronous motor (IPMSM) according to the injection frequency in carrier-based sensorless operation. The effects of spatial harmonics on inductance and voltage distortion due to the nonideal characteristics of IPMSM and inverter are examined as factors influencing the position estimation performance. Furthermore, the position estimation performance is analyzed by calculating the current at the switching instant in several operating conditions. In summary, the half switching frequency injection is more robust to the nonideal characteristics of IPMSM, especially with light load condition. The validity of the analysis is verified by the simulation and experimental results.

• 한국전기전자재료학회논문지
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• 제11권9호
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• pp.683-686
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• 1998

Hot carrier effects as a function of bias stress time and bias stress consitions were syste-matically investigated in p-channel poly-Si TFT s fabricated on the quartz substrate. The device degradation was observed for the negative bias stress, while improvement of electrical characteristic except for subthreshold slope was observed for the positive bias stress. It was found that these results were related to the hot-carrier injection into the gate oxide and interface states at the poly-Si/$SiO_2$interface rather than defects states generation within the poly-Si active layer under bias stress.