• 대한전자공학회논문지TC
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• 제45권5호
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• pp.21-29
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• 2008

본 논문은 IEEE802.11n 시스템의 반송파 주파수 옵셋 추정 알고리즘을 제안한다. IEEE802.11n 시스템은 다중 송수신 안테나 시스템이므로 종래의 단일 송수신 안테나 시스템에 적용되는 알고리즘과는 다르게 다중 수신부에서 적용 가능한 결합 기법을 고려하여 적용하여야 한다. 따라서 본 논문에서는 IEEE802.11n 과 같은 다중 수신 안테나 시스템에서 적용 가능한 수신기 결합 구조의 반송파 주파수 옵셋 추정 알고리즘을 제안하고, 제안하는 선택적 결합 반송파 주파수 옵셋 추정 알고리즘이 종래의 알고리즘보다 SNR 10dB에서 채널 B 인 경우에 1/10, 채널 D 인 경우에 1/2 의 MSE 오류로 추정이 가능함을 확인하였다.

• 청정기술
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• 제24권1호
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• pp.63-69
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• 2018

순산소 연소 기술 중 $CO_2$ 회수 비용 절감 효과가 가장 우수한 케미컬루핑연소(chemical looping combustion, CLC) 기술의 핵심인 산소전달입자의 선정을 위해 환원반응 특성 및 물리화학적 특성에 대한 연구를 진행하였다. 세 종류의 산소전달입자(SDN70, N018-R2, N016-R4)를 대상으로 기포유동층 반응기에서 환원반응기체의 농도 및 환원 반응 온도 변화에 따른 산소전달입자의 연료전화율(fuel conversion)과 $CO_2$ 선택도($CO_2$ selectivity)를 측정 및 비교 분석하였다. 또한 산소전달입자의 마모손실 정도 및 입자의 표면 특성을 분석하기 위해 내마모도(Attrition Index, AI) 및 BET surface area를 측정하였다. 결과적으로 세 종류의 산소전달입자 모두 케미컬루핑연소 시스템에 활용하기 적합함을 확인하였으며, 가장 우수한 입자는 N016-R4로 판단되었다.

• Environmental Engineering Research
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• 제22권2호
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• pp.210-215
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• 2017

Produced water is the largest wastestream of oil and gas exploration. It consists of various organic and inorganic compounds that hinder its beneficial use. This study compared the treatment of produced water in a batch suspended and biofilm activated sludge process. The biofilm carrier material was made from Gardenia Carinata shell. COD, $NH_4{^+}-N$ and $NO_3-N$ removal was monitored in both the suspended (control) and floating carrier bioreactors. The results show a rapid reduction of produced water constituents in the floating carrier bioreactor. COD, $NH_4{^+}-N$ and $NO_3-N$ removal was in the range of 99%, 98% and 97% for the floating carrier bioreactor whereas it was 88%, 84% and 83% for the control bioreactor. The rapid reduction of COD, $NH_4{^+}-N$ and $NO_3-N$ clearly indicate that the floating carrier materials served as an attached growth medium for microorganisms, improved the breakdown of produced water constituents and reduced inhibition of microbial metabolic activities.

• 청정기술
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• 제8권3호
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• pp.167-172
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• 2002

제지슬러지를 지렁이에게 급이하여 생산된 분변토의 하 폐수 고도처리용 담체로의 적용 가능성에 대하여 알아보았다. 먼저 폐수를 일반 활성슬러지법으로 운전한 후 이를 담체와 유입수의 조건을 달리하여 영양 염류의 제거 효율을 알아보았다. 담체를 적용하기 전엔 T-P및 T-N의 제거율은 각각 평균 52%와 31%정도로 나타났다. Pellet 형 및 pack 형으로 제조된 두 종류의 분변토 담체를 적용한 후에는 T-P의 경우는 제거효율이 약 1.3~1.4배 증가하였으며 T-N의 제거효율은 약 1.9 ~ 2.0 배 증가하여 상당히 뛰어난 영양염류의 제거 효율을 보여주었다. 또한, T-N 및 T-P의 제거효율은 담체의 종류에는 큰 영향을 받지 않아 다양한 미생물이 서식하는 분변토는 성형 방법에 관계없이 뛰어난 성능을 보임을 알 수 있었다. 반면, 담체 적용 전후의 BOD 및 COD의 제거 효율은 큰 차이가 없었다. 본 연구를 통하여 분변토로 제조된 담체는 하 폐수 고도처리용 담체로의 활용 가능성이 매우 높은 것으로 사료된다.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2004년도 하계학술대회 논문집 Vol.5 No.1
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• pp.215-219
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• 2004

This paper is investigated about the effect of carrier gas and humidity for generating hydrogen gas. In the experimental result of generating hydrogen gas by non-thermal plasma reactor, the rate of generating hydrogen gas is different with what kind of carrier gas is. We used two types of carrier gas, such as $N_2$ and He. $N_2$ as carrier gas is more efficient to generate hydrogen gas than He because $N_2$ is reacted with $O_2$, which is made from water dissociation. In comparison with no humidity and humidity 45[%], the generation of hydrogen gas is decreased with increasing the humidity. That is the result that the energy for water dissociation is reduced on water surface because a part of plasma energy is absorbed at the small particle produced from humidifier.

• 한국분말재료학회지
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• 제20권1호
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• pp.24-32
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• 2013

The effect of carrier gases (He, $N_2$) on the properties of Ti coating layers were investigated to manufacture high-density Ti coating layers. Cold spray coating layers manufactured using He gas had denser and more homogenous structures than those using $N_2$ gas. The He gas coating layers showed porosity value of 0.02% and hardness value of Hv 229.1, indicating more excellent properties than the porosity and hardness of $N_2$ gas coating layers. Bond strengths were examined, and coating layers manufactured using He recorded a value of 74.3 MPa; those manufactured using $N_2$ gas had a value of 64.6 MPa. The aforementioned results were associated with the fact that, when coating layers were manufactured using He gas, the powder could be easily deposited because of its high particle impact velocity. When Ti coating layers were manufactured by the cold spray process, He carrier gas was more suitable than $N_2$ gas for manufacturing excellent coating layers.

• 한국전기전자재료학회논문지
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• 제17권11호
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• pp.1246-1251
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• 2004

This paper is investigated about the effect of carrier gas type and the humidity for generating hydrogen gas. The vibration of the water surface is more powerful with increasing applied voltage. In this experimental reactor which is made of multi-needle and plate, the maximum acquired hydrogen production rate is about 3500 ppm. In the experimental result of generating hydrogen gas by non-thermal plasma reactor, the rate of generating hydrogen gas is different with what kind of carrier gas is. We used two types of carrier gas, such as $N_2$ and He. $N_2$ as carrier gas is more efficient to generate hydrogen gas than He because $N_2$ is reacted with $O_2$, which is made from water dissociation. In comparison with water droplet by humidifier and without water droplet by humidifier, the generation of hydrogen gas is decreased in case of water droplet by humidifier. That is the result that the energy for water dissociation is reduced on water surface because a part of plasma energy is absorbed at the small water molecular produced from humidifier.

• 대한전자공학회논문지
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• 제25권2호
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• pp.182-187
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• 1988

Hot carrier induced device degradation characteristics under DC bias stress have been investigated in n-MOSFETs with channel length of 1.2,1.8 um, and compared with those of LDD structure device with same channel length. Based on these results, the device lifetime in normal operating bias(Vgs=Vds=5V) is evaluated. The lifetimes of conventional and LDD n-MOSFET with channel length of 1.2 um are estimated about for 17 days and for 12 years, respectively. The degradation rate of LDD n-MOSFET under the same stress is the lowest at n-region implnatation dose of 2.5E15 cm-\ulcorner while the substrate current is the lowest at the dose of 1E13cm-\ulcorner Thses results show that the device degradation characteristics are basic measurement parameter to find optimum process conditions in LDD devices and evaluate a reliability of sub-micron device.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2012년도 제43회 하계 정기 학술대회 초록집
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• pp.429-429
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• 2012

To investigate the gettering effect of B-doped n-type monocrystalline silicon wafer, we made the p-n junction by diffusing boron into n-type monocrystalline Si substrate and then oxidized the boron doped n-type monocrystalline silicon wafer by in-situ wet and dry oxidation. After oxidation, the minority carrier lifetime was measured by using microwave photoconductance and the sheet resistance by 4-point probe, respectively. The junction depth was analyzed by Secondary Ion Mass Spectrometry (SIMS). Boron diffusion reduced the metal impurities in the bulk of silicon wafer and increased the minority carrier lifetime. In the case of wet oxidation, the sheet resistance value of ${\sim}46{\Omega}/{\Box}$ was obtained at $900^{\circ}C$, depostion time 50 min, and drive-in time 10 min. Uniformity was ~7% at $925^{\circ}C$, deposition time 30 min, and drive-in time 10 min. Finally, the minority carrier lifetime was shown to be increased from $3.3{\mu}s$ for bare wafer to $21.6{\mu}s$ for $900^{\circ}C$, deposition 40 min, and drive-in 10 min condition. In the case of dry oxidation, for the condition of 50 min deposition, 10 min drive-in, and O2 flow of 2000 SCCM, the minority carrier lifetime of 16.3us, the sheet resistance of ${\sim}48{\Omega}/{\Box}$, and uniformity of 2% were measured.

• 한국시뮬레이션학회논문지
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• 제17권2호
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• pp.13-19
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• 2008

본 연구에서는 드레인 부근의 채널 영역에서 접합 전계를 줄이는 Buffered deposition 구조의 소자를 제안하였다. Buffered deposition 구조의 소자 제작은 첫 번째 게이트를 식각한 후에 NM1(N-type Minor1) 이온주입을 하고 다시 HLD막과 질화막을 덮어 식각하여 제작하였다. 이러한 Buffered deposition 구조는 전계를 줄이기 위한 버퍼층으로 되어 있으며 Buffered deposition 소자의 여러 가지 구조의 Hot carrier 수명을 비교하였으며 열화 특성도 분석하여 10년간의 Hot carrier 수명을 만족함을 증명하였다.