• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2003년도 하계학술대회 논문집 Vol.4 No.1
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• pp.294-299
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• 2003

We have investigated the structures of copper nanowires encapsulated in carbon nanotubes using a structural optimization process applied to the steepest descent method. The results showed that the stable morphology of the cylindrical ultrathin copper nanowires in carbon nanotubes is multishell packs consisted of coaxial cylindrical shells. As the diameter of copper nanotubes increased, the encapsulated copper nanowires have the face centered cubic structure as the bulk. Both the semiclassical orbits in a circle and the circular rolling of a triangular network can explain the structures of ultrathin multishell copper nanowires encapsulated in carbon nanotubes.

• 반도체디스플레이기술학회지
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• 제20권3호
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• pp.161-166
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• 2021

To prevent accidents caused by changes in the surrounding environment or other factors, various protection facilities are installed at the photovoltaic connection module. The main causes of fire are sparks due to foreign substances inside the photovoltaic connection module through high temperature rise and dew condensation in the photovoltaic connection module, and fire due to heat from the power diode. The proposed method can predict the fire by measuring flame, carbon dioxide, carbon monoxide, temperature, humidity, input voltage, and current on the photovoltaic connection module, and when the fire conditions are reached, fire alarm and power off can be sent to managers and users in real time to prevent fire in advance.

• 한국결정성장학회지
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• 제15권2호
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• pp.57-60
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• 2005

[ $SiO_2$ ]로 산화된 웨이퍼 위에 상압화학기상증착 기술로 반도체 탄소나노튜브를 성장했으며, 이 나노튜브의 전기적 특성을 조사하였다. 전기적 특성은 반도체 탄소나노튜뷰를 $300^{\circ}C$, 대기 중에서 산화 열처리 시간을 변화시키면서 상온대기에서 측정하였다. 반도체 탄소나노튜브는 $300^{\circ}C$에서 산화 열처리 시간을 증가할수록 점차적으로 금속 탄소나노튜브로 변형되는 것을 보았다. 탄소나노튜브는 $300^{\circ}C$, 대기에서 6시간 동안 산화 열처리 후 표면의 일부가 없어지는 현상을 투과 전자현미경으로 확인하였다.

• 반도체디스플레이기술학회지
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• 제8권4호
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• pp.21-24
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• 2009

We investigated a nanoscale inertia sensor based on telescoping carbon nanotubes, using classical molecular dynamics simulations. The position of the telescoping nanotubes is controlled by the centrifugal force exerted by the rotation platform, thus, position shifts are determined by the capacitance between carbon nanotubes and the electrode, and the operating frequency of the carbon nanotube oscillator. This measurement system, tracking oscillations of the carbon nanotube oscillator, can be used as the sensor for numerous types of devices, such as motion detectors, accelerometers and acoustic sensors.

• Journal of information and communication convergence engineering
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• 제11권4호
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• pp.288-292
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• 2013

In this paper, a carbon implant is investigated in detail from the perspectives of performance advantages and side effects for the thick n-type metal-oxide-semiconductor field-effect transistor (n-MOSFET). Threshold voltage ($V_{th}$) adjustment using a carbon implant significantly improves the $V_{th}$ mismatch performance in a thick (3.3-V) n-MOS transistor. It has been reported that a bad mismatch occurs particularly in the case of 0.11-${\mu}m$ $V_{th}$ node technology. This paper investigates a carbon implant process as a promising candidate for the optimal $V_{th}$ roll-off curve. The carbon implant makes the $V_{th}$ roll-off curve perfectly flat, which is explained in detail. Further, the mechanism of hot carrier injection lifetime degradation by the carbon implant is investigated, and new process integration involving the addition of a nitrogen implant in the lightly doped drain process is offered as its solution. This paper presents the critical side effects, such as Isub increases and device performance shifts caused by the carbon implant and suggests an efficient method to avoid these issues.

• 대한전기학회:학술대회논문집
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• 대한전기학회 1999년도 하계학술대회 논문집 D
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• pp.1504-1507
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• 1999

We have grown vertically aligned carbon nanotubes in a large area of Co-Ni codeposited Si substrates by the thermal CVD using $C_2H_2$ gas. Since the discovery of carbon nanotubes, Synthesis of carbon nanotubes for mass production has been achieved by several methods such as laser vaporization arc discharge, and pyrolysis. In particular, growth of vertically aligned nanotubes is of technological importance for applications to FED. Recently, vertically aligned carbon nanotubes have been grown on glass by PECVD Aligned carbon nanotubes can be also grown on mesoporous silica and Fe patterned porous silicon using CVD. Despite such breakthroughs in the growth, the growth mechanism of the alignment are still far from being clearly understood. Furthermore, FED has not been clearly demonstrated yet at a practical level. Here, we demonstrate that carbon nanotubes can be vertically aligned on catalyzed Si substrate when the domain density reaches a certain value. We suggest that steric hindrance between nanotubes at an initial stage of the growth forces nanotubes to align vertically and then nanotubes are further grown by the cap growth mechanism.

• 반도체디스플레이기술학회지
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• 제21권2호
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• pp.144-149
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• 2022

A cryogenic Mixed Refrigerant Joule-Thomson refrigeration cycle was designed to be applied to the semiconductor etching process with non-flammable constituents. 3-stage cascade refrigerator, single mixed refrigerant Joule-Thomson refrigerator, and 2-stage cascade type mixed refrigerant Joule-Thomson refrigerator are analyzed to figure out the coefficient of performance. Non-flammable mixture of argon(Ar), tetrafluoromethane(R14), trifluoromethane (R23) and octafluoropropane(R218) were utilized to analyze the refrigeration cycle efficiency. The designed refrigeration cycle was adapted to cool down the coolant of HFE7200(Ethoxy-nonafluorobutane, C₄F₉OC₂H₅) with certain constraints. Maximum coefficient of performance of the refrigeration system is obtained as 0.289 for the cooling temperature lower than -100℃. The detailed result of the coefficient of performance according to the mixture composition is discussed in this study.

• 전기전자학회논문지
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• 제27권1호
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• pp.65-70
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• 2023

높은 캐리어 이동도, 큰 포화 속도, 낮은 고유 정전 용량, 유연성, 그리고 투명성을 장점으로 가진 CNTFET(Carbon NanoTube Field Effect Transistor) 10,000개 이상을 현존하는 반도체 디자인 절차와 공정 프로세서를 활용하여 하나의 반도체 칩에 집적하는데 성공하였다. 제작된 반도체 칩의 3차원 다층 구조와 다양한 CNTFET 생산 공정 연구는 기존 MOSFET과 CNTFET를 하나의 반도체 칩에 함께 사용하는 hybrid MOSFET-CNTFET 반도체 칩 제작에 대한 가능성을 보여주고 있다. 본 논문에서는 hybrid MOSFET-CNTFET을 활용한 6T binary SRAM을 디자인하는 방법에 대해 논하고자 한다. 기존 MOSFET SRAM 또는 CNTFET SRAM 디자인 방법을 활용하여 hybrid MOSFET-CNTFET SRAM을 디자인 하는 방법을 소개하고 그 성능을 기존 MOSFET SRAM 그리고 CNTFET SRAM과 비교하고자 한다.

• 한국결정성장학회지
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• 제16권5호
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• pp.198-202
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• 2006

We could achieve the bridge-type formation of the iridium-catalyzed carbon nanofibers across the gap on the MgO substrate using microwave plasma enhanced chemical vapor deposition method. On the plane surface area of the MgO substrate, the iridium-catalyzed carbon nanofibers were grown as a lateral direction to the substrate. The bridge-type formation and/or the lateral growth of the iridium-catalyzed carbon nanofibers were interconnected with each other. Finally, they could form an entangled network having the bridge-type formation of the carbon nanofibers across the gap on the substrate and the laterally-grown carbon nanofibers on the plane surface area of the substrate. The entangled network showed the semiconductor electrical characteristics.

• 반도체디스플레이기술학회지
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• 제13권4호
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• pp.33-36
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• 2014

In this paper, a carbon strain gauge for large strain was developed. The carbon strain gauge was fabricated by forming PCB and antenna pattern using Cu/Ni/Au film and carbon resistor pattern using screen printing process on plastic film substrate. It was possible to develop low-cost disposable strain gauge since the carbon paste was cheap and the fabrication process was simple. The wireless communication type carbon strain gauge was fabricated by integrating signal processing circuit, antenna and power all together on the same substrate as a strain gauge. The wireless communication type carbon strain gauge has a merit of being available immediately at the spot without any particular system.