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The semiconductor carbon nanotube growth with atmosphere pressure chemical vapor deposition method and oxidation effect at $300^{\circ}C$ in air  

Kim, Jwa-Yeon (Department of Advanced Materials Engineering, Hoseo University)
Publication Information
Journal of the Korean Crystal Growth and Crystal Technology / v.15, no.2, 2005 , pp. 57-60 More about this Journal
Abstract
Semiconductor carbon nanotube was grown on oxided silicon wafer with atmosphere pressure chemical vapor deposition (APCVD) method and investigated the electrical property after thermal oxidation at $300^{\circ}C$ in air. The electrical property was measured at room temperature in air after thermal oxidation at $300^{\circ}C$ for various times in air. Semiconductor carbon nanotube was steadily changed to metallic carbon nanotube as increasing of thermal oxidation times at $300^{\circ}C$ in air. Some removed area of carbon nanotube surface was shown with transmission electron microscopy (TEM) after thermal oxidation for 6 hours at $300^{\circ}C$ in air.
Keywords
Semiconductor; Carbon; Nanotube; LPCVD; Thermal; Oxidation; AFM; TEM; Electrical; Metallic;
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