• Journal of the Korean Ceramic Society
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• v.55 no.3
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• pp.285-289
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• 2018

We synthesized silicon carbide (${\beta}-SiC$) nanowires with nano-scale diameter (30 - 400 nm) and micro-scale length ($50-200{\mu}m$) on a porous body using low-grade silica and carbon black powder by carbothermal reduction at $1300-1600^{\circ}C$. The SiC nanowires were formed by vapor-liquid-solid deposition with self-evaporated Fe catalysts in low-grade silica. We investigated the characteristics of the SiC nanowires, which were grown on a porous body with Ar flowing in a vacuum furnace. Their structural, optical, and electrical properties were analyzed with X-ray diffraction (XRD), transmission electron microscopy (TEM), and selective area electron diffraction (SAED). We obtained high-quality SiC single crystalline nanowire without stacking faults that may have uses in industrial applications.

• Korean Journal of Materials Research
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• v.31 no.7
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• pp.403-408
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• 2021

Various surface colors are predicted and implemented using the interference color generated by controlling the thickness of nano-level diamond like carbon (DLC) thin film. Samples having thicknesses of up to 385 nm and various interference colors are prepared using a single crystal silicon (100) substrate with changing processing times at low temperature by plasma-enhanced chemical vapor deposition. The thickness, surface roughness, color, phases, and anti-scratch performance under each condition are analyzed using a scanning electron microscope, colorimeter, micro-Raman device, and scratch tester. Coating with the same uniformity as the surface roughness of the substrate is possible over the entire experimental thickness range, and more than five different colors are implemented at this time. The color matched with the color predicted by the model, assuming only the reflection mode of the thin film. All the DLC thin films show constant D/G peak fraction without significant change, and have anti-scratch values of about 19 N. The results indicate the possibility that nano-level DLC thin films with various interference colors can be applied to exterior materials of actual mobile devices.

• Tribology and Lubricants
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• v.21 no.5
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• pp.209-215
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• 2005

Nano/micro friction with the contact area was studied on Si-wafer (100) and diamond-like carbon (DLC) film. Borosilicate balls of radii $0.32{\mu}m,\;0.5{\mu}m,\;1.25{\mu}m\;and\;2.5{\mu}m$ mounted on the top of AFM tip (NPS) were used for nano-scale contact and Soda Lime glass balls of radii 0.25mm, 0.5mm, 1mm were used for micro-scale contact. At nano-scale, the friction between ball and surface was measured with the applied normal load using an atomic force microscope (AFM), and at micro scale it was measured using ball-on flat type micro-tribotester. All the experiments were conducted at controlled conditions of temperature $(24\pm1^{\circ}C)$ and humidity $(45\pm5\%)$. Friction was measured as a function of applied normal load in the range of 0-160nN at nano scale and in the range of $1000{\mu}N,\; 1500{\mu}N,\;3000{\mu}N\;and\;4800{\mu}N$ at micro scale. Results showed that the friction at nano scale increased with the applied normal load and ball size for both kinds of samples. Similar behavior of friction with the applied normal load and ball size was observed for Si-wafer at micro scale. However, for DLC friction decreased with the ball size. This difference of in behavior of friction in DLC nano- and microscale was attribute to the difference in the operating mechanisms. The evidence of the operating mechanisms at micro-scale were observed using scanning electron microscope (SEM). At micro-scale, solid-solid adhesion was dominant in Silicon-wafer, while plowing in DLC. Contrary to the nano scale that shows almost a wear-less situation, wear was prominent at micro-scale. At nano- and micro-scale, effect of contact area on the friction was discussed with the different applied normal load and ball size.

• Journal of Korea Society of Waste Management
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• v.35 no.7
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• pp.670-682
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• 2018

Engineered nanomaterials (ENMs) can be released to humans and the environment through the generation of waste containing engineered nanomaterials (WCNMs) and the use and disposal of nano-products. Nanoparticles can also be introduced intentionally or unintentionally into waste streams. This study examined WCNMs in domestic industries, and target nanomaterials, such as silicon dioxide, titanium oxide, zinc oxide, nano silver, and carbon nanotubes (CNTs), were selected. We tested 48 samples, such as dust, sludge, ash, and by-products from manufacturing facilities and waste treatment facilities. We analyzed leaching and content concentrations for heavy metals and hazardous constituents of the waste. Chemical compositions were also measured by XRD and XRF, and the unique properties of nano-waste were identified by using a particle size distribution analyzer and TEM. The dust and sludge generated from manufacturing facilities and the use of nanomaterials showed higher concentrations of metals such as lead, arsenic, chromium, barium, and zinc. Oiled cloths from facilities using nano silver revealed high concentrations of copper, and the leaching concentrations of copper and lead in fly ash were higher than those in bottom ash. In XRF measurements at the facilities, we detected compounds such as silicon dioxide, sulfur trioxide, calcium oxide, titanium dioxide, and zinc oxide. We found several chemicals such as calcium oxide and silicon dioxide in the bottom ash of waste incinerators.

• Journal of Power System Engineering
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• v.17 no.1
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• pp.110-115
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• 2013

The electrochemical performance and microstructure of Al-Si, Al-Si/C was investigated as anode for lithium ion battery. The Al-Si nano composite with 5 : 1 at% ratio was prepared by arc-discharge nano powder process. However, some of problem is occurred, when Al nano composite was synthesized by this manufacturing. The oxidation film is generated around Al-Si particles for passivating processing in the manufacture. The oxidation film interrupts electrical chemistry reaction during lithium ion insertion/extraction for charge and discharge. Because of the existence the oxidation film, Al-Si first cycle capacity is very lower than other examples. Therefore, carbon synthsized by glucose ($C_6H_{12}O_6$) was conducted to remove the oxidation film covered on the composite. The results showed that the first discharge cycle capacity of Al-Si/C is improved to 113mAh/g comparing with Al-Si (18.6mAh/g). Furthermore, XRD data and TEM images indicate that $Al_4C_3$ crystalline exist in Al-Si/C composite. In addition the Si-Al anode material, in which silicon is more contained was tested by same method as above, it was investigated to check the anode capacity and morphology properties in accordance with changing content of silicon, Si-Al anode has much higher initial discharge capacity(about 500mAh/g) than anode materials based on Aluminum as well as the morphology properties is also very different with the anode based Aluminum.

• Journal of the Korean Magnetics Society
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• v.16 no.1
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• pp.75-78
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• 2006

In case of contacts between semiconductor and metal in semiconductor circuits, they become unstable because of thermal budget. To prevent these problems, we use diffusion barrier that has a good thermal stability between metal and semiconductor. So we consider the diffusion barrier to prevent the increase of contact resistance between the interfaces of metals and semiconductors, and the increase of resistance and the reaction between the interfaces. In this paper we deposited tungsten boron carbon nitride (W-B-C-N) thin film on silicon substrate. The impurities of the $1000\;{\AA}-thick$ W-B-C-N thin films provide stuffing effect for preventing the inter-diffusion between metal thin films $(Cu-2000\;{\AA})$ and silicon during the high temperature $(700\~1000^{\circ}C)$ annealing process.

• Journal of Electrochemical Science and Technology
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• v.10 no.2
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• pp.131-138
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• 2019

To improve the performance of Si anodes in advanced Li-ion batteries, the design of the electrode plays a critical role, especially due to the large volumetric expansion in the Si anode during Li insertion. In our study, we used a simple fabrication method to prepare Si-based electrodes by grafting polyacrylic acid (PAA) to a carboxymethyl cellulose (CMC) binder (CMC-g-PAA). The procedure consists of first mixing nano-sized Si and the binders (CMC and PAA), and then coating the slurry on a Cu foil. The carbon network was formed via carbonization of the binders i.e., by a simple heat treatment of the electrode. The carbon network in the electrode is mechanically and electrically robust, which leads to higher electrical conductivity and better mechanical property. This explains its long cycle performance without the addition of a conducting agent (for example, carbon). Therefore, the partially carbonized CMC-g-PAA binder presented in this study represents a new feasible approach to produce Si anodes for use in advanced Li-ion batteries.

• Journal of the Korean Vacuum Society
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• v.20 no.3
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• pp.200-204
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• 2011

In this paper, we deposited the tungsten carbon nitride (W-C-N; nitrogen gas flow of 2 sccm) and tungsten carbon (W-C) thin film on silicon substrate using rf magnetron sputter. Then the thin films annealed at $800^{\circ}C$ during 30 minute ($N_2$ gas ambient) for thermal damage. Nano-indenter was executed 16 points on thin film surface to measure the thermal stability, and we also propose the elastic modulus and the Weibull distribution, respectively. This nanotribology method provides statistically reliable information. From these results, the W-C-N thin film included nitrogen gas flow is more stable for film uniformities, physical properties and crystallinities than that of not included nitrogen gas flow.

• Journal of the Korean Vacuum Society
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• v.18 no.3
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• pp.203-207
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• 2009

Copper is known as a replacement for aluminum wire which is used for semiconductor. Because specific resistance of Cu ($1.67{\mu}{\Omega}$-cm) is lower than that of Al ($2.66{\mu}{\Omega}$-cm), Cu reduce RC delay time. Although melting point of Cu($1085^{\circ}C$) is higher than melting point of Al, Cu have characteristic to easily react with Silicon(Si) in low temperature, and it isn't good at adhesive strength with Si. For above these reason, research of diffusion barrier to prevent reaction between Cu and Si and to raise adhesive strength is steadily advanced. Our study group have researched on W-C-N (tungsten-carbon-nitrogen) Diffusion barrier for preventing diffusion of Cu through semiconductor. By recent studies, It's reported that W-C-N diffusion barrier can even precent Cu and Si diffusing effectively at high temperature. In this treatise, we vaporized different proportion of N into diffusion barrier to research Cu's Electromigration based on the results and studied surface hardness in the heat process using nano scale indentation system. We gain that diffusion barrier containing nitrogen is more stable for Cu's electromigration and has stronger surface hardness in heat treatment process.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.02a
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• pp.71-71
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• 2012

As the critical dimensions of integrated circuits are scaled down, the line width and spacing between the metal interconnects are made smaller. The dielectric film used as insulation between the metal lines contributes to the resistance-capacitance (RC) time constant that governs the device speed. If the RC time delay, cross talk and lowering the power dissipation are to be reduced, the intermetal dielectric (IMD) films should have a low dielectric constant. The introduction of Cu and low-k dielectrics has incrementally improved the situation as compared to the conventional $Al/SiO_2$ technology by reducing both the resistivity and the capacitance between interconnects. Some of the potential candidate materials to be used as an ILD are organic and inorganic precursors such as hydrogensilsequioxane (HSQ), silsesquioxane (SSQ), methylsilsisequioxane (MSQ) and carbon doped silicon oxide (SiOCH), It has been shown that organic functional groups can dramatically decrease dielectric constant by increasing the free volume of films. Recently, various inorganic precursors have been used to prepare the SiOCH films. The k value of the material depends on the number of $CH_3$ groups built into the structure since they lower both polarity and density of the material by steric hindrance, which the replacement of Si-O bonds with Si-$CH_3$ (methyl group) bonds causes bulk porosity due to the formation of nano-sized voids within the silicon oxide matrix. In this talk, we will be introduce some properties of SiOC(-H) thin films deposited with the dimethyldimethoxysilane (DMDMS: $C_4H_{12}O_2Si$) and oxygen as precursors by using plasma-enhanced chemical vapor deposition with and without ultraviolet (UV) irradiation.